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1. 发明专利

JP2001255278A SURFACE INSPECTION DEVICE AND ITS METHOD 失效
公开(公告)号：JP2001255278A
公开(公告)日：2001-09-21
申请号：JP2000068593
申请日：2000-03-08
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA YOJI
IPC分类号： G01B11/30 , G01B11/24 , G01B11/245 , G01N21/95 , G01N21/956 , G06T1/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection device and its method capable of discriminating a scratch having a various shape generated on the surface from adhering foreign matter and inspecting it, when polishing or grinding such as CMP or the like is performed onto a machining object (for example, an insulating film on a semiconductor substrate) in semiconductor production or magnetic head production. SOLUTION: This surface inspection method and its device are characterized by executing downward illumination and oblique illumination by nearly the same beam onto the scratch generated on the surface of the polished or ground insulating film and the foreign matter, detecting the change of the intensity of scattered light generated from the shallow scratch and the foreign matter between the downward illumination and the oblique illumination to discriminate the shallow scratch from the foreign matter, and detecting directivity of the scattered light at the downward illumination to discriminate the linear scratch from the foreign matter.

2. 发明专利

JP2000162141A DEFECT INSPECTING DEVICE AND METHOD 失效
公开(公告)号：JP2000162141A
公开(公告)日：2000-06-16
申请号：JP33700298
申请日：1998-11-27
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： MORIYAMA ICHIRO , TANABE YOSHIKAZU , KENBO YUKIO , NOGUCHI MINORU , OSHIMA YOSHIMASA , ISHIMARU ICHIRO , HACHIKAKE YASUO , KATO YUICHIRO
IPC分类号： H01L21/306 , G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To automatically discriminate a foreign matter from a scratch. SOLUTION: This device 10 is provided with a vertical light emitting device 20 for emitting a vertical light 21 to the surface to be inspected 2 of a wafer 1; an oblique light emitting device 24 for emitting an oblique light 28 to the surface to be inspected; a high angle light receiving device 30 for receiving a high angle light 31 of the scattered light irregularly reflected by the surface to be inspected 2; a middle angle light receiving device 40 for receiving a middle angle light 41; and a low angle light receiving device 50 for receiving a low angle light 51. Of the scattered light in the scanning emission of the vertical light 21 to the surface to be inspected 2, the high angle light 41 and the middle angle light 41 are collected by the high angle light receiving device 30 and the middle angle light receiving device 40, and the low angle light 51 in the scanning emission of the oblique light 28 to the surface to be inspected 2 is collected by the low angle light receiving device. When the low angle light is eliminated from the high angle light and middle angle light, a scratch is discriminated from a foreign matter. By this automatic discrimination, the working property, quality and reliability of the defect inspection can be improved.

3. 发明专利

JP2014211440A 表面検査装置およびその方法有权
标题翻译：用于表面检查的装置和方法
公开(公告)号：JP2014211440A
公开(公告)日：2014-11-13
申请号：JP2014113696
申请日：2014-06-02
申请人：株式会社日立製作所 , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , Hitachi High-Technologies Corp
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA HIROSHI
IPC分类号： G01N21/88 , G01B11/02 , G01B11/30 , G01N21/84 , G01N21/956 , H01L21/027
CPC分类号： G01B11/02 , G01B11/30 , G01N21/84 , G01N21/88 , G01N21/95 , H01L21/30
摘要：【課題】半導体製造や磁気ヘッド製造において、被加工対象物(例えば、半導体基板上の絶縁膜)に対してCMPなどの研磨または研削加工を施した際、その表面に生じる様々な形状を有するスクラッチと付着する異物とを弁別して検査することができるようにした表面検査装置およびその方法を提供することにある。【解決手段】本発明は、研磨または研削された絶縁膜の表面に発生したスクラッチや異物に対してほぼ同じ光束で落射照明と斜方照明とを行い、該落射照明時と斜方照明時との間において浅いスクラッチと異物とから発生する散乱光強度の変化を検出することによって浅いスクラッチと異物とを弁別し、さらに、前記落射照明時における散乱光の指向性を検出することによって線状スクラッチと異物とを弁別することを特徴とする表面検査方法およびその装置である。【選択図】図1
摘要翻译：要解决的问题：提供一种表面检查装置和表面检查方法，该表面检查装置和表面检查方法可以鉴别出附着在外部材料上的处理物体（例如，半导体基板上的绝缘体膜）的表面上出现的各种形状的划痕在半导体制造和磁头制造中对被处理物进行抛光或研磨处理（例如CMP）进行检查。本发明的表面检查方法对划痕和外来物进行表面照明和倾斜照明在具有大致相等的光通量的抛光或接地绝缘体膜的表面上发生的材料，并且检测由外部光照时间和倾斜照明时间之间的浅划痕和异物产生的散射光的强度变化，从而区分来自异物的浅划痕。该方法通过检测外照射时间中的散射光的方向性来进一步鉴别异物的线性划痕。还提供了该方法的设备。

4. 发明专利

JP2006201179A Surface inspection device and its method 有权
标题翻译：表面检测装置及其方法
公开(公告)号：JP2006201179A
公开(公告)日：2006-08-03
申请号：JP2006028261
申请日：2006-02-06
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA YOJI
IPC分类号： G01N21/956 , G01B11/30 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection device and its method where a scratch, having various shapes occurring on the surface of a processed object (for example, an insulating film on a semiconductor substrate) and an adhering foreign substance are discriminated and inspected, when the processed object is polished or ground through CMP or the like, in the manufacturing of semiconductors or of magnetic heads. SOLUTION: In the surface inspection method and its device, epi-illumination and oblique illumination are applied to the scratch and the foreign substance occurring on the surface of the polished or ground insulating film with substantially the same luminous flux, a shallow scratch and foreign substance are discriminated by detecting variation of the intensity of the scattered light generated from the shallow scratch and foreign substance between the epi-illumination and oblique illumination, and a linear scratch and foreign substance are discriminated, by detecting the directivity of the scattered light in the epi-illumination. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题：提供一种表面检查装置及其方法，其中在加工对象（例如半导体基板上的绝缘膜）的表面上出现各种形状的刮痕和附着的异物为通过CMP等对被处理物进行抛光或研磨时，在半导体或磁头的制造中进行鉴别和检查。解决方案：在表面检查方法及其装置中，外露照明和倾斜照明被施加到具有基本上相同的光通量的抛光或接地绝缘膜的表面上产生的划痕和异物，浅划痕通过检测从外部照明和倾斜照明之间的浅划痕和异物产生的散射光的强度的变化来区分外来物质，并且通过检测散射光的方向性来区分线性划痕和异物在epi照明。版权所有（C）2006，JPO＆NCIPI

5. 发明专利

JPH09306846A EXHAUSTING APPARATUS 失效
公开(公告)号：JPH09306846A
公开(公告)日：1997-11-28
申请号：JP11982196
申请日：1996-05-15
申请人： HITACHI LTD
发明人： MORIYAMA ICHIRO , AZUMA OSAMU
IPC分类号： C23C16/44 , C23C16/455 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To avoid increasing the pressure loss of an exhaust line of an exhausting apparatus and prolong the maintenance interval of this line during the removal of a contaminant contained in a fluid flowing in this line. SOLUTION: An apparatus comprises a means for evacuating a chamber for treating a work with an introduced material gas as specified, an exhaust line L for exhausting a gas A exhausted by the evacuating means, and a filter chamber 5a integrated with the line L at its midway. A filter case 10 has an opening wider than the inner diameter of the line L, facing at the out-going gas A in the filter chamber 5a and is mounted therein through a punched metal partition 9, without contacting the inner wall of the chamber 5a. The filter case 10 houses filter elements 11 for catching a contaminant contained in the gas A and filter density of these elements 11a increase as if goes away from the opening.

6. 发明专利

JP2013174599A Device and method for surface inspection 有权
标题翻译：用于表面检查的装置和方法
公开(公告)号：JP2013174599A
公开(公告)日：2013-09-05
申请号：JP2013076050
申请日：2013-04-01
申请人： Hitachi Ltd , 株式会社日立製作所 , Hitachi High-Technologies Corp , 株式会社日立ハイテクノロジーズ
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA HIROSHI
IPC分类号： G01N21/956 , G01N21/88 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection device and a surface inspection method, which can discriminate scratches in various shapes occurring on a surface of a processed object (for example, an insulator film on a semiconductor substrate) from foreign materials attached to the processed object, and perform inspection when the processed object is subjected to polishing or grinding processing such as CMP, in semiconductor manufacturing and magnetic head manufacturing.SOLUTION: The surface inspection method of the present invention performs epi-illumination and oblique illumination on scratches and foreign materials occurring on a surface of a polished or ground insulator film with substantially equal light flux, and detects a change in intensity of scattered light generated from shallow scratches and the foreign materials between the epi-illumination time and the oblique illumination time to thereby discriminate the shallow scratches from the foreign materials. The method further discriminates linear scratches from the foreign materials by detecting the directivity of the scattered light in the epi-illumination time. The device for the method is also provided.
摘要翻译：要解决的问题：提供一种表面检查装置和表面检查方法，该表面检查装置和表面检查方法可以鉴别出附着在外部材料上的处理物体（例如，半导体基板上的绝缘体膜）的表面上出现的各种形状的划痕在半导体制造和磁头制造中对被处理物进行抛光或研磨处理（例如CMP）进行检查。本发明的表面检查方法对划痕和外来物进行表面照明和倾斜照明在具有大致相等的光通量的抛光或接地绝缘体膜的表面上发生的材料，并且检测由外部光照时间和倾斜照射时间之间的浅划痕和异物产生的散射光的强度变化，从而区分来自异物的浅划痕。该方法通过检测外照射时间中的散射光的方向性来进一步鉴别异物的线性划痕。还提供了该方法的设备。

7. 发明专利

JP2009192541A Defect inspection device 有权
标题翻译：缺陷检查装置
公开(公告)号：JP2009192541A
公开(公告)日：2009-08-27
申请号：JP2009125763
申请日：2009-05-25
申请人： Hitachi High-Technologies Corp , Hitachi Ltd , 株式会社日立ハイテクノロジーズ , 株式会社日立製作所
发明人： ISHIMARU ICHIRO , NOGUCHI MINORU , MORIYAMA ICHIRO , TANABE YOSHIKAZU , HACHIKAKE YASUO , KENBO YUKIO , WATANABE KENJI , TSUCHIYAMA HIROSHI
IPC分类号： G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a surface inspection apparatus for discriminably inspecting a scratch having various shapes occurring on the surface and an adhering foreign substance, when polishing or grinding such as CMP (Chemical Mechanical Polishing) is applied to a workpiece (for example, an insulation film on a semiconductor substrate), in manufacturing a semiconductor or a magnetic head. SOLUTION: In this surface inspection method and apparatus, epi-illumination and slanting illumination are applied to the scratch and the foreign substance occurring on the surface of the polished or ground insulation film with substantially the same light flux, a shallow scratch and a foreign substance are discriminated by detecting variation of the scattered light intensity generated from the shallow scratch and foreign substance between the epi-illumination time and slanting illumination time. Further, a linear scratch and a foreign substance are discriminated by detecting the directivity of the scattered light during the epi-illumination. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种表面检查装置，用于区分地检查在表面上发生的各种形状的刮痕和粘附的异物，当将CMP（化学机械抛光）的抛光或研磨施加到工件上时例如半导体衬底上的绝缘膜），制造半导体或磁头时。解决方案：在这种表面检查方法和装置中，对抛光或接地绝缘膜的表面上产生的划痕和异物施加外照射和倾斜照明，具有基本上相同的光通量，浅划痕和通过检测在外部照射时间和倾斜照明时间之间从浅划痕和异物产生的散射光强度的变化来区分异物。此外，通过在外照明期间检测散射光的方向性来区分线性划痕和异物。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2007287272A System for calculating required amount of redundancy line and failure analysis method using the same 审中-公开
标题翻译：用于计算所需冗余量的系统和使用其的故障分析方法
公开(公告)号：JP2007287272A
公开(公告)日：2007-11-01
申请号：JP2006115234
申请日：2006-04-19
申请人： Elpida Memory Inc , Hitachi Ltd , エルピーダメモリ株式会社 , 株式会社日立製作所
发明人： ISHIKAWA SEIJI , MORIYAMA ICHIRO
IPC分类号： G11C29/44 , G01R31/28 , H01L21/82 , H01L21/822 , H01L27/04
CPC分类号： G11C29/56 , G11C29/56008 , G11C29/72
摘要： PROBLEM TO BE SOLVED: To provide a technology for easily designing an adequate redundancy line by evaluating the number of required redundancy lines on the basis of a distribution of fail bits being generated in an actually manufactured wafer. SOLUTION: In the system for calculating the required amount of redundancy line, which consists of a database for storing test results of semiconductor memory products and a computer for analyzing the test results, the computer is equipped with a data retrieval function section 111 for retrieving the data from the database and a function section 114 computing the required amount of redundancy lines for obtaining the total number of redundancy lines required for relieving the fail bits on chips to decide redundancy lines to be assigned in respective row/column directions as a breakdown of the number of required redundancy lines and for summing up the total number of redundancy lines required for the relief and the number of redundancy lines assigned to the respective row/column directions. Then the result of process of the function section 114 computing the required amount of the redundancy line is displayed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过基于在实际制造的晶片中产生的故障位的分布来评估所需冗余线的数量来容易地设计足够的冗余线的技术。解决方案：在用于计算所需冗余线量的系统中，由用于存储半导体存储器产品的测试结果的数据库和用于分析测试结果的计算机组成的计算机配备有数据检索功能部分111 用于从数据库检索数据，以及功能部分114计算所需的冗余线数量，以获得用于减少芯片上的故障比特所需的冗余线的总数，以确定将在各个行/列方向上分配的冗余线作为所需冗余线数量的细分，以及用于求解浮雕所需的冗余线总数和分配给各行/列方向的冗余线数量。然后显示功能部分114的计算所需量的冗余线的处理结果。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JPH11145091A CMP EQUIPMENT, POLISHING METHOD USING THE SAME, AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11145091A
公开(公告)日：1999-05-28
申请号：JP30297497
申请日：1997-11-05
申请人： HITACHI LTD
发明人： MORIYAMA ICHIRO , ITO HIDEFUMI
IPC分类号： B24B37/00 , B24B37/013 , H01L21/304 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To provide a CMP equipment capable of CMP treatment of high performance and high reliability, a polishing method using the CMP equipment, and a manufacturing method of a semiconductor integrated circuit device. SOLUTION: In a CMP equipment, a waste liquid discharge vent 9 for detection is arranged in the middle part of a waste liquid discharge pipe 8 linked with a CMP process chamber 5 and a waste liquid treating function part 7, and a waste liquid detecting sensor 10 is attached to the waste liquid discharge vent 9 for detection. In a polishing method using the CMP equipment, an insulating film or a metal layer in a wafer 1 is polished, and the work finishing of CMP treatment of the insulating film or the metal layer is judged by using the waste liquid detecting sensor 10.

10. 发明专利

JPH1019790A EQUIPMENT FOR INSPECTING BOARD IN VACUUM 失效
公开(公告)号：JPH1019790A
公开(公告)日：1998-01-23
申请号：JP17203496
申请日：1996-07-02
申请人： HITACHI LTD
发明人： SERIZAWA MASAYOSHI , NOGUCHI MINORU , MORIYAMA ICHIRO
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To specify a step and a facility where a foreign matter is produced and to take a countermeasure by irradiating the surface of a board in the vacuum with a laser light emitted from an illumination system of an inspection unit on a vacuum chamber and detecting a scattering light from the dust by means of a detection system. SOLUTION: A wafer 1 processed by a process unit is introduced through a transfer mechanism into a vacuum chamber in order to inspect a dust particle on the surface. An inspection unit 21 comprises three detection system 25 and six illumination systems 22 located on the opposite sides thereof. Light from a semiconductor laser 23 in the illumination system 22 is refracted through a reflector 14 and imaged as an linear illumination 24 on the surface of the wafer 1. A scattering light is generated when a foreign matter is present and received by a detection lens 26 in the detection systems 25. In order to scan the entire surface of the wafer 1, an X stage is reciprocated continuously and a Y stage is stepped by means of an XY stage. According to the method, the cause for generating a foreign matter can be detected quickly and a countermeasure can be taken quickly.

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