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1. 发明专利

JPS63266835A VAPOR-PHASE REACTOR 失效
公开(公告)号：JPS63266835A
公开(公告)日：1988-11-02
申请号：JP10145987
申请日：1987-04-24
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： AIKAWA HIROSHI , OSHIKA KATSUSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI , SHIMONO MASAKI , SUZUKI KEIICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To provide cleaning effect equivalent to or more than a wet cleaning and to improve the throughput of a whole steps of manufacturing a semiconductor by arranging an ultraviolet ray irradiator and an oxygen gas and ammonia gas supplying unit to a load locking chamber. CONSTITUTION:A plasma CVD or plasma etching apparatus has a reaction chamber 10 and a load locking chamber 20. O2 gas and ammonia gas supplying means 30 is arranged at a suitable position in the chamber 20. O2 and ammonia gas supply amounts are regulated by a valve 32. The means 30 is connected to an ammonia gas supply source and an O2 gas supply source. In order to convey a GaAs wafer 3 into the chamber 10, an ultraviolet ray irradiator 40 is disposed on the ceiling of the load locking chamber at the position where wafer carrier means 22 waits in a state for holding the wafer 3. The irradiator 40 is a light source for irradiating an ultraviolet ray having 253.7nm or shorter of wavelength. The light source may, for example, use a carbon arc lamp, a xenon lamp, a mercury lamp or an excimer laser, etc. The ultraviolet light source most preferably uses a low-pressure mercury lamp.

2. 发明专利

JPS63266834A VAPOR-PHASE REACTOR 失效
公开(公告)号：JPS63266834A
公开(公告)日：1988-11-02
申请号：JP10145887
申请日：1987-04-24
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： AIKAWA HIROSHI , OSHIKA KATSUSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI , SHIMONO MASAKI , SUZUKI KEIICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To provide cleaning effect equivalent to or more than a wet cleaning and to improve the throughput of a whole steps of manufacturing a semiconductor by arranging an ultraviolet ray irradiator and an oxygen gas supplying unit to a loader side load locking chamber. CONSTITUTION:A plasma CVD or plasma etching apparatus has a reaction chamber 10 and a load locking chamber 20. O2 gas supplying means 30 is arranged at a suitable position in the chamber 20. O2 supply amount is regulated by a valve 32. An exhaust duct 24 is arranged in the chamber 20. In order to convey a wafer 3 into the chamber 10, an ultraviolet ray irradiator 40 is disposed on the ceiling of the load locking chamber at the position where wafer carrier means 22 waits in a state for holding the wafer 3. The irradiator 40 is a light source for irradiating an ultraviolet ray having 253.7nm or shorter in wavelength. The light source may, for example, use a carbon arc lamp, a xenon lamp, a mercury lamp or an excimer laser, etc. The ultraviolet light source most preferably uses a low-pressure mercury lamp.

3. 发明专利

JP2003247940A RELATIVE DIELECTRIC CONSTANT DETECTION METHOD OF POROUS MATERIAL AND FOREIGN SUBSTANCE INSPECTION METHOD 审中-公开
公开(公告)号：JP2003247940A
公开(公告)日：2003-09-05
申请号：JP2002047512
申请日：2002-02-25
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： SUZUKI SHINICHI , HACHITANI MASAYUKI , OSHIMA YOSHIMASA , UTO YUKIO
IPC分类号： G01B11/30 , G01N21/47 , G01N21/956 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To detect the relative dielectric constant of a porous material by a simple method or device. SOLUTION: A laser beam transmitted under the surface of a porous film 12 within a laser beam L irradiated on a semiconductor wafer 10 from a floodlight system is scattered by the interface of voids of the porous film 12 to emit diffusive light D. Diffusive light detection lenses 7a, 7b, 7c and 7d of a light receiving system converges the diffusive light, and photoelectric transducing elements 8a, 8b, 8c and 8d convert the intensity of the diffusive light into an electric signal. An analog processing circuit 51 carries out a pre-process such as noise elimination or digitization with respect to the electric signal inputted from the transducing elements 8a, 8b, 8c and 8d. A dielectric constant detection circuit 52 memorizes, as a computation formula, a correlation between the relative dielectric constant and the scattered light intensity according to the thickness of the porous film 12, and computes the relative dielectric constant of the porous film 12 from the output data from the processing circuit 51 and the thickness information of the porous film 12 by inputting the thickness information. COPYRIGHT: (C)2003,JPO

4. 发明专利

JPH10125669A PLASMA CVD SYSTEM AND FORMATION OF OXIDE FILM 失效
公开(公告)号：JPH10125669A
公开(公告)日：1998-05-15
申请号：JP29804496
申请日：1996-10-22
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： KUDO YUTAKA , HACHITANI MASAYUKI , OYAMA KATSUMI , SAITO MASAYOSHI , HONMA YOSHIO
IPC分类号： C23C16/18 , C23C16/40 , C23C16/50 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD system that delivers high film quality improvement effect. SOLUTION: Reactive gases are pumped into the reaction chamber of a plasma CVD system 1 provided with an upper electrode 20 and a lower electrode 32, and the gases are reacted with one another in a plasma atmosphere to form an oxide film on a substrate 6. Specifically, a reactive gas composed of any one of triethoxysilane, tetraethylorthosilicate or trimethoxysilane as an organic silane material, and either of nitrous oxide (N2 O) or oxygen is pumped as oxidizing agent. Further, both or either of argon(Ar) gas and ammonia (NH3 ) gas or hydrazine (N2 H4 ) gas is added to the reactive gas. A voltage with a frequency of 27MHz or above and 100MHz or below is applied to the upper electrode 20, and a bias voltage with a frequency of 300kHz or above and 13.56MHz or below is applied to the lower electrode 32. Thereby the ions of the additive gas(es) are accelerated and implanted in the substrate 6.

5. 发明专利

JPH09167766A PLASMA CHEMICAL VAPOR GROWTH DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09167766A
公开(公告)日：1997-06-24
申请号：JP32681695
申请日：1995-12-15
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： SAITO MASAYOSHI , KUDO YUTAKA , OYAMA KATSUMI , HACHITANI MASAYUKI , HONMA YOSHIO
IPC分类号： H01L21/285 , H01L21/205 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To improve the water resistance of an Si oxide film for lowering dielectric constant by impressing an upper electrode with high-frequency power exceeding a specific frequency within a parallel planar type plasma CVD device. SOLUTION: An outer wall 101 of a reaction chamber is made of aluminum but the covers 104, 107 provided around an inner wall, an upper electrode 105 and a lower electrode 106, etc., are covered with in insulator such as alumina, etc. Besides, the surfaces of a dispersion board and a shower board are coated with an insulator. The upper electrode 105 can be impressed with high-frequency exceeding 28MH while the lower electrode 106 can be impressed with another high-frequency exceeding 300KHz, on the other hand, the lower electrode 106 can be vertically operated within the range of 30-100mm. As for the kinds of reaction gas, SiH4 (monosilane) 112, TEOS (tetraethyl silicate) 113, F-TRIES (fluoroethoriethoxy silane) 114 are applicable.

6. 发明专利

JPH08306676A CHEMICAL VAPOR GROWTH DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08306676A
公开(公告)日：1996-11-22
申请号：JP10985795
申请日：1995-05-09
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： SAITO MASAYOSHI , KUDO YUTAKA , HONMA YOSHIO , ARAI HISAHIRO , NAGASAKI KEIICHI , SATO EIJI , HACHITANI MASAYUKI , SUZUKI SHINPEI , IIJIMA SHINPEI , NAKANISHI SHIGEHIKO
IPC分类号： H01L21/205 , H01L21/31 , H01L21/316
摘要： PURPOSE: To provide a method of manufacturing a semiconductor device, which can form a fluid silicon oxide film of high quality without depending upon a base film at the time of a chemical vapor growth reaction. CONSTITUTION: A semiconductor device is manufactured by a method wherein a first silicon oxide film 302 is formed using a silicon alkoxide as its raw material at a pressure in the range of 10 to 100Torr on the condition of high ozone by a chemical vapor growth method, then, a second silicon oxide film 303 is formed at a pressure in the range of 500Torr to 1.5 atmospheric pressure. After a third silicon oxide film 307 is previously formed by a plasma chemical vapor growth method, the above chemical vapor growth reaction may be performed.

7. 发明专利

JPH11286789A FORMATION OF METALLIC THIN FILM 失效
公开(公告)号：JPH11286789A
公开(公告)日：1999-10-19
申请号：JP10868798
申请日：1998-04-03
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , SUZUKI SHINICHI , HACHITANI MASAYUKI
IPC分类号： C23C26/00 , C23C26/02
摘要： PROBLEM TO BE SOLVED: To form a metallic thin film on a substrate by a high speed treatment in a high yield with good film formability without depending on a sputtering method by coating the surface of a substrate with an amalgam which is an alloy of mercury and other metal, heating the substrate and evaporating the mercury in the amalgam. SOLUTION: The surface of a wafer 1 as a substrate of silicon, compd. semiconductor, glass, metal, plastic or the like is coated with amalgam. The coating is executed by a spin coating method, a wire or roller coating method, a spraying method, a dip brazing method, an electrostatic adsorption method, a pressing method or the like. As the metal in the amalgam, gold, silver, copper, platinum, aluminum, strontium, bismuth, germanium, indium, phosphorus, arsenic, gallium or the like are suitably used. Next, the wafer 1 is heated in a heating chamber 5, preferably, made a vacuum inert atmosphere, the mercury in the amalgam is evaporated and recovered by a cold trap 11, and a metallic thin film 12 is formed on the wafer 1.

8. 发明专利

JPH062950B2 失效
公开(公告)号：JPH062950B2
公开(公告)日：1994-01-12
申请号：JP5575186
申请日：1986-03-13
申请人： HITACHI ELECTR ENG
发明人： NAGASAKI KEIICHI , AIKAWA HIROSHI , HACHITANI MASAYUKI
IPC分类号： H01L21/205 , C23C16/44 , C23C16/48 , C23C16/50 , C23C16/54 , C23F4/00 , H01L21/02 , H01L21/31 , H01L21/677

9. 发明专利

JPH04124274A VAPOR PHASE REACTION DEVICE 失效
公开(公告)号：JPH04124274A
公开(公告)日：1992-04-24
申请号：JP24312190
申请日：1990-09-13
申请人： HITACHI ELECTR ENG
发明人： NAGASAKI KEIICHI , HACHITANI MASAYUKI , HINO SHIGEKI
IPC分类号： C23C16/50 , C23C16/54 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To maintain a load locking chamber and a vacuum reaction chamber in a vacuum state at all times by providing a spare chamber which is much smaller in volume than the load locking chamber at the time of supplying a work to the load locking chamber. CONSTITUTION:The load locking chamber 20 is disposed adjacent to the vacuum reaction chamber 10 of the vapor phase reaction device 1 and the work 30 is transported via a 1st gate valve 12 into the vacuum reaction chamber 10 by a transporting mechanism 40. The spare chamber 3 for supplying the work is connected adjacent to the load locking chamber 20 at this time and is partitioned by a 2nd gate valve 22. The atm. pressure is maintained only in the spare chamber 5 and the inside thereof is evacuated by a vacuum pump 24 at the time of carrying the work 30 into the chamber through a 3rd gate valve 5. The pressure regulation is executed in a short period of time in this way and throughput is improved.

10. 发明专利

JPS63262836A COVER OF WAFER CARTRIDGE FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 失效
公开(公告)号：JPS63262836A
公开(公告)日：1988-10-31
申请号：JP9796787
申请日：1987-04-21
申请人： HITACHI ELECTR ENG
发明人： UMENO RYUTARO , MAEDA NOBORU , NAGASAKI KEIICHI , HACHITANI MASAYUKI , AIKAWA HIROSHI
IPC分类号： H01L21/677 , H01L21/02 , H01L21/673 , H01L21/68
摘要： PURPOSE:To prevent the oxidation of a wafer by providing a cartridge cover and an injection nozzle which injects an inert gas inside the cartridge cover and by applying the cover to the equipment of each process. CONSTITUTION:A cover 8 covers a cartridge and consists of a ceiling hatch 18a which opens or closes in the direction shown by arrows D, four side boards 8b, a side hatch 8c which opens or closes in the direction shown by arrows E, etc., on the bottom 8d of the cover 8. An injection block 10 which has an injection nozzle 10a is also provided inside the cover 8 between the cartridges and an inert gas is supplied to the injection block 10 from a gas source outside an equipment. This can prevent the oxidation of a wafer since the inert gas can be supplied from the injection nozzle 10a to the wafer housed in the cartridge.

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