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1. 发明专利

JPS5425284A VACUUM EVAPORATION APPARATUS 失效
公开(公告)号：JPS5425284A
公开(公告)日：1979-02-26
申请号：JP9036777
申请日：1977-07-29
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NAGASAKI TAKAO , MURAKAWA YUKIO , NAGASAKI KEIICHI
IPC分类号： C23C14/24
摘要： PURPOSE:To reduce the size with a simplified cover opening/closing mechanism while accomplishing higher speed of evaporation and uniform distribution of film thickness with partial cut of evaporating steam minimized with a release means used for the cover opening/closing mechanism provided right on the evaporating source.

2. 发明专利

JPS53144475A SPUTTERING APPARATUS 失效
公开(公告)号：JPS53144475A
公开(公告)日：1978-12-15
申请号：JP5867677
申请日：1977-05-23
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： NAGASAKI TAKAO , NAKADA KENSUKE , MURAKAWA YUKIO , NAGASAKI KEIICHI
IPC分类号： C23C14/50 , C23C14/54
摘要： PURPOSE:To provide a sputtering apparatus which enables postheating without removing the belljar by means of a freely closable cover mechanism which is adapted to cover an infrared ray lamp heater for preheating.

3. 发明专利

JPH0758102A METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM 失效
公开(公告)号：JPH0758102A
公开(公告)日：1995-03-03
申请号：JP21703893
申请日：1993-08-09
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： ARAI HISAHIRO , SATO EIJI , NAGASAKI KEIICHI , HONMA YOSHIO , SAITO MASAYOSHI , NAKANISHI SHIGEHIKO
IPC分类号： H01L21/205 , H01L21/31 , H01L21/316
摘要： PURPOSE:To prevent the occurrence of abnormal combustion by introducing TEOS gas into a chamber first, letting ozone gas into the chamber after that, and maintaining the density of the TEOS gas in the chamber to a specific value. CONSTITUTION:First of all, a valve drive circuit 38 opens first and fourth valves 13 and 19, and opens second and third valves 15 and 17. Then TEOS gas is let into a reaction chamber 1. After the quantity of the flow of the TEOS gas and the inside pressure of the reaction chamber stabilize, the third valve 17 is opened, and the fourth valve 19 is opened And the inside of the reaction chamber 1 becomes a mixed atmosphere of the TEOS and ozone gases, and film forming reaction is started The density of the TEOS gas is maintained below 1%. Consequently, it becomes possible to prevent the occurrence of abnormal combustion.

4. 发明专利

JPH0758101A FORMATION OF SILICON OXIDE FILM AND CVD DEVICE 失效
公开(公告)号：JPH0758101A
公开(公告)日：1995-03-03
申请号：JP21703793
申请日：1993-08-09
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： ARAI HISAHIRO , SATO EIJI , NAGASAKI KEIICHI , HONMA YOSHIO , SAITO MASAYOSHI , NAKANISHI SHIGEHIKO
IPC分类号： H01L21/205 , H01L21/31 , H01L21/316 , H01L21/36
摘要： PURPOSE:To prevent the generation and attaching of flakes to a shower electrode by amanging an electrode plate made out of metal, connected to a high-frequency power source provided facing the shower electrode, to have a refrigerant circulating means. CONSTITUTION:When the temperature of a shower electrode surface is higher than a set value, a signal for driving a cooler 84 is sent from a temperature controller 82. A refrigerant cooled by the cooler 84 is discharged to a refrigerant sending apparatus 78 with a pump 86, circulates in the refrigerant circulator 72, and returns to the cooler 84 again. It is desirable that the refrigerant is circulated so that the temperature of the shower electrode surface is 150 deg.C or lower; preferably 140 deg.C or lower more, preferably 130 deg.C or lower, and most preferably 120 deg.C or lower. Consequently, it becomes possible to effectively prevent flakes from being produced and attaching to the surface of the shower electrode, and the minute through holes of the shower electrode from clogging.

5. 发明专利

JPS58127341A AUTOMATIC WAFER HANDLING APPARATUS 失效
公开(公告)号：JPS58127341A
公开(公告)日：1983-07-29
申请号：JP890682
申请日：1982-01-25
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： MURAKAWA YUKIO , NAGASAKI KEIICHI , YOSHIDA AKIRA
IPC分类号： H01L21/205 , H01L21/677
摘要： PURPOSE:To improve working efficiency and prevent generation of foreign matter and adhesion to wafer and crack of wafer or missing of it through automatic handling by providing a wafer absorbing head and wafer carrier which automatically handle all wafers to/from the processor. CONSTITUTION:When both absorbing heads 3, 4 are rotated counterclockwise horizontally for only 90 deg. from the position indicated in the figure after a wafer is vacuum-absorbed by said both absorbing heads under the condition that a CVD-processed wafer on a sample board 16 within a reaction furnace 1 can be vacuum-absorbed, an absorbing head 3 for loading is positioned on the sample board 16 in the reaction furnace 1 and the absorbing head 4 for unloading comes to the position where it can deliver the wafer taken out from the reaction furnace 1 to the wafer carrying belt 9. Therefore, when a vacuum absorbing force of the absorbing heads 3, 4 are released in this position, a wafer which has been absorbed by the absorbing head 3 is placed on the sample board 16, a wafer which has been absorbed by the absorbing head 4 is handed to the wafer carrying belt 9, and it is carried to a cartridge 10 in the unloader side by the wafer carrying belt 9.

6. 发明专利

JPH0754153A CVD DEVICE 失效
公开(公告)号：JPH0754153A
公开(公告)日：1995-02-28
申请号：JP21703593
申请日：1993-08-09
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： ARAI HISAHIRO , SATO EIJI , NAGASAKI KEIICHI , HONMA YOSHIO , SAITO MASAYOSHI , NAKANISHI SHIGEHIKO
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01L21/205
摘要： PURPOSE:To simultaneously execute the gas reaction analysis in a chamber and the progression of a film forming operation by providing the chamber with a Fourier transform IR spectrophotometer and liftably installing an upper electrode having a shower electrode. CONSTITUTION:The liftable upper and lower electrodes 5, 7 are disposed to face each other in the chamber 3 of a CVD device 1 and the lower electrode 5 for placement of a wafer is lifted by a hydraulic mechanism 44. The upper electrode 7 having the shower electrode 42 and a reactive gas supply conduit 36 is lifted when a ball screw mechanism 30 is rotated by driving of a stepping motor 20 and bellows 24 is elongated and contracted by vertically moving a plate 28. A light projecting system 19 of FTIR and a light receiving system 12 are disposed to face each other on the outer side of the side wall of the chamber 3 via a window 14 made of ZnSe in such a manner than the optical axes 16 are aligned. The gas state in the chamber 3 is monitored to enable the rapid formation of the optimum gaseous atmosphere state. As a result, the CVD films having the film quality not possible heretofore are formed.

7. 发明专利

JPS63266835A VAPOR-PHASE REACTOR 失效
公开(公告)号：JPS63266835A
公开(公告)日：1988-11-02
申请号：JP10145987
申请日：1987-04-24
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： AIKAWA HIROSHI , OSHIKA KATSUSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI , SHIMONO MASAKI , SUZUKI KEIICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To provide cleaning effect equivalent to or more than a wet cleaning and to improve the throughput of a whole steps of manufacturing a semiconductor by arranging an ultraviolet ray irradiator and an oxygen gas and ammonia gas supplying unit to a load locking chamber. CONSTITUTION:A plasma CVD or plasma etching apparatus has a reaction chamber 10 and a load locking chamber 20. O2 gas and ammonia gas supplying means 30 is arranged at a suitable position in the chamber 20. O2 and ammonia gas supply amounts are regulated by a valve 32. The means 30 is connected to an ammonia gas supply source and an O2 gas supply source. In order to convey a GaAs wafer 3 into the chamber 10, an ultraviolet ray irradiator 40 is disposed on the ceiling of the load locking chamber at the position where wafer carrier means 22 waits in a state for holding the wafer 3. The irradiator 40 is a light source for irradiating an ultraviolet ray having 253.7nm or shorter of wavelength. The light source may, for example, use a carbon arc lamp, a xenon lamp, a mercury lamp or an excimer laser, etc. The ultraviolet light source most preferably uses a low-pressure mercury lamp.

8. 发明专利

JPS63266834A VAPOR-PHASE REACTOR 失效
公开(公告)号：JPS63266834A
公开(公告)日：1988-11-02
申请号：JP10145887
申请日：1987-04-24
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： AIKAWA HIROSHI , OSHIKA KATSUSHI , NAGASAKI KEIICHI , HACHITANI MASAYUKI , SHIMONO MASAKI , SUZUKI KEIICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/304 , H01L21/3065
摘要： PURPOSE:To provide cleaning effect equivalent to or more than a wet cleaning and to improve the throughput of a whole steps of manufacturing a semiconductor by arranging an ultraviolet ray irradiator and an oxygen gas supplying unit to a loader side load locking chamber. CONSTITUTION:A plasma CVD or plasma etching apparatus has a reaction chamber 10 and a load locking chamber 20. O2 gas supplying means 30 is arranged at a suitable position in the chamber 20. O2 supply amount is regulated by a valve 32. An exhaust duct 24 is arranged in the chamber 20. In order to convey a wafer 3 into the chamber 10, an ultraviolet ray irradiator 40 is disposed on the ceiling of the load locking chamber at the position where wafer carrier means 22 waits in a state for holding the wafer 3. The irradiator 40 is a light source for irradiating an ultraviolet ray having 253.7nm or shorter in wavelength. The light source may, for example, use a carbon arc lamp, a xenon lamp, a mercury lamp or an excimer laser, etc. The ultraviolet light source most preferably uses a low-pressure mercury lamp.

9. 发明专利

JPS5458690A VAPOR DEPOSITION APPARATUS 失效
公开(公告)号：JPS5458690A
公开(公告)日：1979-05-11
申请号：JP12453477
申请日：1977-10-19
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： IKEDA KENICHI , ASAMI YASUSHI , HASHIMOTO TOSHIO , NAGASAKI TAKAO , MURAKAWA YUKIO , NAGASAKI KEIICHI
IPC分类号： C23C14/50
摘要： PURPOSE:To provide a vapor deposition apparatus which is capable of forming uniform deposited membrane, by smooth transmission of revolution between a wafer chucking jig and chuck setting jig by use of a gear mechanism. CONSTITUTION:A main shaft 3 is made to pass through a supporting rod 2 installed at the upper part of a treating space in a bell jar, and at the lower end of the main shaft 3 is attached a supporting plate 7 which extends horizontally in three directions. At the three extended ends of the plate 7 are fitted rotatable shafts 8. A spring belt is applied to a pulley 10 fixed at the upper end of the shaft 8 and to outer periphery of a supporting pipe 6, so that the pulley 10 is rotated by the rotation of the main shaft 3. The lower part of the shaft 8 pierces the center of a master pulley 13, and at the projected end of the pulley 13 is fixed a chuck setting jig 15. At the peripheral part of the jig 15 are attached six rotatable shafts 16, to which are fixed disc wafer-chucking jigs 20 at the lower ends. The transmission of revolution between the jigs 15 and 20 is conducted with a master gear 26 and an auxiliary gear 27 which are coupled directly. In Figure, 24, 22 show material to be evaporated and wafers respectively.

10. 发明专利

JPH08306676A CHEMICAL VAPOR GROWTH DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08306676A
公开(公告)日：1996-11-22
申请号：JP10985795
申请日：1995-05-09
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： SAITO MASAYOSHI , KUDO YUTAKA , HONMA YOSHIO , ARAI HISAHIRO , NAGASAKI KEIICHI , SATO EIJI , HACHITANI MASAYUKI , SUZUKI SHINPEI , IIJIMA SHINPEI , NAKANISHI SHIGEHIKO
IPC分类号： H01L21/205 , H01L21/31 , H01L21/316
摘要： PURPOSE: To provide a method of manufacturing a semiconductor device, which can form a fluid silicon oxide film of high quality without depending upon a base film at the time of a chemical vapor growth reaction. CONSTITUTION: A semiconductor device is manufactured by a method wherein a first silicon oxide film 302 is formed using a silicon alkoxide as its raw material at a pressure in the range of 10 to 100Torr on the condition of high ozone by a chemical vapor growth method, then, a second silicon oxide film 303 is formed at a pressure in the range of 500Torr to 1.5 atmospheric pressure. After a third silicon oxide film 307 is previously formed by a plasma chemical vapor growth method, the above chemical vapor growth reaction may be performed.

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