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1. 发明专利

JPH10125669A PLASMA CVD SYSTEM AND FORMATION OF OXIDE FILM 失效
公开(公告)号：JPH10125669A
公开(公告)日：1998-05-15
申请号：JP29804496
申请日：1996-10-22
申请人： HITACHI ELECTR ENG , HITACHI LTD
发明人： KUDO YUTAKA , HACHITANI MASAYUKI , OYAMA KATSUMI , SAITO MASAYOSHI , HONMA YOSHIO
IPC分类号： C23C16/18 , C23C16/40 , C23C16/50 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a plasma CVD system that delivers high film quality improvement effect. SOLUTION: Reactive gases are pumped into the reaction chamber of a plasma CVD system 1 provided with an upper electrode 20 and a lower electrode 32, and the gases are reacted with one another in a plasma atmosphere to form an oxide film on a substrate 6. Specifically, a reactive gas composed of any one of triethoxysilane, tetraethylorthosilicate or trimethoxysilane as an organic silane material, and either of nitrous oxide (N2 O) or oxygen is pumped as oxidizing agent. Further, both or either of argon(Ar) gas and ammonia (NH3 ) gas or hydrazine (N2 H4 ) gas is added to the reactive gas. A voltage with a frequency of 27MHz or above and 100MHz or below is applied to the upper electrode 20, and a bias voltage with a frequency of 300kHz or above and 13.56MHz or below is applied to the lower electrode 32. Thereby the ions of the additive gas(es) are accelerated and implanted in the substrate 6.

2. 发明专利

JPH09167766A PLASMA CHEMICAL VAPOR GROWTH DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09167766A
公开(公告)日：1997-06-24
申请号：JP32681695
申请日：1995-12-15
申请人： HITACHI LTD , HITACHI ELECTR ENG
发明人： SAITO MASAYOSHI , KUDO YUTAKA , OYAMA KATSUMI , HACHITANI MASAYUKI , HONMA YOSHIO
IPC分类号： H01L21/285 , H01L21/205 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To improve the water resistance of an Si oxide film for lowering dielectric constant by impressing an upper electrode with high-frequency power exceeding a specific frequency within a parallel planar type plasma CVD device. SOLUTION: An outer wall 101 of a reaction chamber is made of aluminum but the covers 104, 107 provided around an inner wall, an upper electrode 105 and a lower electrode 106, etc., are covered with in insulator such as alumina, etc. Besides, the surfaces of a dispersion board and a shower board are coated with an insulator. The upper electrode 105 can be impressed with high-frequency exceeding 28MH while the lower electrode 106 can be impressed with another high-frequency exceeding 300KHz, on the other hand, the lower electrode 106 can be vertically operated within the range of 30-100mm. As for the kinds of reaction gas, SiH4 (monosilane) 112, TEOS (tetraethyl silicate) 113, F-TRIES (fluoroethoriethoxy silane) 114 are applicable.

3. 发明专利

JPH11285666A LIQUID MATERIAL COATING METHOD 失效
公开(公告)号：JPH11285666A
公开(公告)日：1999-10-19
申请号：JP10868698
申请日：1998-04-03
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HACHITANI MASAYUKI , IKUMI MASUZO
IPC分类号： B05D1/04 , B05D7/00
摘要： PROBLEM TO BE SOLVED: To perform uniform coating by atomizing a liquid material and electrostatically adsorbing the particles on a substrate to which static electricity is imparted. SOLUTION: A liquid material 7 such as a resist stored in a liquid material vessel 9 is atomized by using a piezoelectric vibrator 11. An atomizing means except the piezoelectric vibrator 11 can be used. A gate valve 13 is provided on the upper part of the liquid material vessel 9 and the atomized liquid material 7 is supplied to a coating treating vessel 3 by opening the gate valve 13. An ionizer 15 is arranged between the gate valve 13 and a large sized glass substrate 1 to electrify the atomized liquid material 7 into a reverse polarity to an electrostatic chuck 5. On the other hand, a DC power source 17 is connected to the electrostatic chuck 5 to impress a high voltage. As a result, the atomized liquid material 7 impressed into the reverse polarity is electrostatically adsorbed to the surface of the large sized substrate 1. As a result, the uniform coating is performed.

4. 发明专利

JPH09115840A WAFER TRAY FOR CVD SYSTEM 失效
公开(公告)号：JPH09115840A
公开(公告)日：1997-05-02
申请号：JP29355395
申请日：1995-10-17
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HACHITANI MASAYUKI
IPC分类号： B65D85/86 , C23C16/44 , C23C16/458 , C23C16/50 , H01L21/205 , H01L21/285 , H01L21/673 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To obtain a wafer tray satisfying various processing conditions by receiving and carrying wafers to be processed on the outside of a reaction furnace and subjecting the wafers to CVD while mounting on a soaking plate. SOLUTION: A wafer 2 to be processed is fitted in a recess on the outside of a reaction furnace and then carried into the reaction furnace and mounted on a soaking plate 122. A foreign matter adhering to the soaking plate 122 is transferred to the tray but is not transferred to the wafer 2 contained therein. Consequently, the foreign matter does not adhere to the opposite surfaces of wafer 2 and thin films deposited thereon thus satisfying the basic conditions of CVD processing. Furthermore, the recess has mirror finished bottom face and the the rear surface 2b, touching the mirror finished bottom face entirely, is not scratched. When a working film is deposited on the surface 2a by CVD, the surface is bent downward, for example, but the central point of rear surface 2b is not scratched. Furthermore, the surface 2a is inverted and a protective film is deposited on the rear surface 2b which is thereby flattened and protected against scratching.

5. 发明专利

JPH08139037A VAPOR PHASE REACTION EQUIPMENT 失效
公开(公告)号：JPH08139037A
公开(公告)日：1996-05-31
申请号：JP30028694
申请日：1994-11-09
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HACHITANI MASAYUKI
IPC分类号： C23C16/44 , C23C16/448 , C23C16/50 , H01L21/205
摘要： PURPOSE: To prevent generation of electric field concentration, and obtain excellent uniformity of film thickness, by using a susceptor having a recessed part wherein the inner diameter is larger than the diameter of a substrate to be mounted and the surface is circular, and by mounting a substrate in the recessed part. CONSTITUTION: A recessed part 27 is formed inside a susceptor 22 of a lower electrode 20. The inner diameter of the recessed part 27 is a little larger than the diameter of a substrate 6. Since the substrate is nearly disklike, the recessed part is molded circular. The depth of the recessed part 27 is equal to, or preferably, a little larger than the thickness of a substrate to be mounted in the recessed part 27. When the depth of the recessed part 27 is less than the thickness of the substrate 6, the distance from a heater cover 23 becomes small, so that an electric field is apt to concentrate, which is not desirable. The susceptor 22 is so assembled that a heater cover 23 covers a part of the upper surface of the outer periphery of the susceptor 22. A part of the heater cover is stacked on the susceptor, in order to relieve electric field concentration, make gas flow uniform, and form a film having uniform thickness distribution.

6. 发明专利

JPH07335643A FILM FORMING METHOD 失效
公开(公告)号：JPH07335643A
公开(公告)日：1995-12-22
申请号：JP14705894
申请日：1994-06-06
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI
IPC分类号： H01L21/205 , H01L21/316
摘要： PURPOSE:To deposite a silicon oxide film at a high speed through a single chamber by a method wherein tetraethyl orthosilicate is vaporized and mixed with O2 and O3 emitted from an ozonizer, and a gaseous mixture of tetraethyl orthosilicate gas and O2, O3 is introduced into a reaction oven and made to react in a plasma discharge atmosphere. CONSTITUTION:A tank 13 filled with liquid tetraethyl orthosilicate (TEOS) is housed in a thermostatic chamber 11 equipped with a heater 12, N or He is introduced into the tank 13 as carrier gas while the tank 13 is heated, evaporated TEOS is sent to a mixer 21 and mixed with O2 and O3 emitted from an ozonizer 42. The gas mixture is sent into a reaction oven 30 through a shower electrode 54 connected to the high-frequency power supply 52 of the oven 30 and decomposed by plasma to deposit an oxide film on a wafer 4 placed on a heated suscepter 33. By this setup, a film forming chamber of this constitution is enhanced in a deposition rate of oxide film and throughput, and a multichamber CVD device can be dispensed with.

7. 发明专利

JPH06349810A VAPOR PHASE REACTION APPARATUS 失效
公开(公告)号：JPH06349810A
公开(公告)日：1994-12-22
申请号：JP15604493
申请日：1993-06-02
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , NAGASAKI KEIICHI
IPC分类号： H01L21/205 , H01L21/31 , H01L21/68 , H01L21/683
摘要： PURPOSE:To prevent an insulating ring, a heater closure, a soaking plate and its insulating cover from being subjected to degradation of ceramic components due to self cleaning by forming the above-mentioned components with an aluminum nitride ceramic material. CONSTITUTION:A soaking plate 22, its perimetric insulating cover 23, an insulating ring 103 supporting a shower electrode 40, and a heater closure 24 in a reaction furnace of a plasma CVD apparatus 1 are composed of an aluminum nitride ceramic material. This material is used in that these components are exposed to a concentration of plasma and that they are most susceptible to the attack of bromic ion radicals. Further, to increase even more the bromic resistance of these components formed with the aluminum nitride ceramic material, a tight layer of AlF3 can be formed on the surface of the aluminum nitride ceramic material. This enables the plasma CVD apparatus to be resistant to strong impacts.

8. 发明专利

JPH04320026A WAFER HEATING SOAKING PLATE 失效
公开(公告)号：JPH04320026A
公开(公告)日：1992-11-10
申请号：JP11403291
申请日：1991-04-18
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HACHITANI MASAYUKI , NAGASAKI KEIICHI , HINO SHIGEKI
IPC分类号： H01L21/205 , H01L21/285 , H01L21/31
摘要： PURPOSE:To provide a soaking plate which is very little bent by heating with respect to a plasma CVD apparatus, uniformly heats wafers, and maintain temperature at a predetermined value. CONSTITUTION:A sinter of silicon carbide is used as the base 221 of a soaking plate, the surface of which is pasted with a metal plate 222. The metal plate is fitted with a thermosensor 61 and provided with a controller 62 which controls heater 21 current by temperature signals outputted by the thermosensor 61. The base made of a sinter of silicon carbide is deformed very little by heat; therefore, the problem of uneven temperatures occurring in a wafer is solved with no bend of the metal plate pasted on the base, and the radiant heat of the heater 21 is well absorbed by the black sinter of silicon carbide with the result that a wafer 3 is rapidly heated by a high thermal conductivity of the metal plate. The wafer 3 is properly maintained under a predetermined temperature condition by the thermosensor 61 and the controller 62 to form a thin film satisfactorily.

9. 发明专利

JPH0435031A MIXTURE NOZZLE FOR PLASMA CVD DEVICE 失效
公开(公告)号：JPH0435031A
公开(公告)日：1992-02-05
申请号：JP14276190
申请日：1990-05-31
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI , HIKIMA HITOSHI
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To mix gases of TEOS system at a satisfactory mixture ratio by shortening the length of an inner peripheral nozzle as compared with that of an outer peripheral nozzle at a predetermined ratio, and forming a mixture space for sufficiently mixing the gases between the ends of both the nozzles. CONSTITUTION:The length of an inlet space 321 for an outer peripheral nozzle 34 is d0, the length of the nozzle is L, and the length (d) of an inner peripheral nozzle 33 is set to range of d0/2 - (d0 + L/4). The maximum value Dmax of the length of a mixture space 35 formed of the ends of the inner and outer peripheral nozzles is (d0 + L), and the minimum value Dmin is 3L/4. Since such a length (d) is formed, the length of a gap between both the nozzles is shortened to reduce a resistance against gas, low pressure TEOS gas of the space 321 is guided by the viscosity of oxygen gas of high pressure to be jetted from the inner peripheral nozzle, fed to the space 35, and both are mixed at a predetermined mixture ratio.

10. 发明专利

JPH0435030A WAFER HEATING MECHANISM FOR PLASMA CVD DEVICE 失效
公开(公告)号：JPH0435030A
公开(公告)日：1992-02-05
申请号：JP14276090
申请日：1990-05-31
申请人： HITACHI ELECTR ENG
发明人： OYAMA KATSUMI
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To provide a heating mechanism which can eliminate temperature irregularity of a wafer and shorten a heating time by bringing a metal soaking plate for placing the wafer in close contact with the upper surface of a heat accumulation plate made of silicon carbide for accumulating heat of a heater by pressing the upper surface of the heater. CONSTITUTION:A heater 21 is provided on a stage 20 provided on a base 101 of a housing. A heat accumulation plate 23 in press-contact with the heater to accumulate heat by absorbing the heat is provided on the heater 21. The plate efficiently absorbs far infrared ray of the heater by using a silicon carbide material and maintains a uniform temperature with large thermal capacity. When a soaking plate 24 is brought into close contact with the plate 23 and secured by an insulating cover 25 and screws 26, the plate 24 made of an aluminum plate processed with black alumite absorbs far infrared ray radiated from the plate via the black alumite. Accordingly, the entire surface is rapidly raised to a uniform temperature by excellent thermal conductivity, and the temperature of the placed wafer becomes the same as the soaking plate.

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