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1. 发明专利

DE3170940D1 A METHOD OF INFORMATION RECORDING ON A SEMICONDUCTOR WAFER 未知
公开(公告)号：DE3170940D1
公开(公告)日：1985-07-18
申请号：DE3170940
申请日：1981-09-18
申请人： HITACHI LTD
发明人： MUNAKATA CHUSUKE , YAGI KUNIHIRO , MIYAZAKI MASARU , YONEDA SHIYOUZOU
IPC分类号： G11C17/00 , G03C1/705 , G11B7/241 , G11B9/08 , G11B11/00 , G11C11/23 , G11C11/30 , G11C11/42 , G11C13/04 , H01L31/08 , H04N1/21
摘要： Herein disclosed is an informtion recording method in which a p- or n-type semiconductor wafer (3) is irradiated with an energetic particle beam such as an electron beam (5) thereby to control, e.g. decrease or increase generation of the surface photovoltage at the irradiated area so that information may be recorded on the wafer.

2. 发明专利

DE3116611A1 未知
公开(公告)号：DE3116611A1
公开(公告)日：1982-03-25
申请号：DE3116611
申请日：1981-04-27
申请人： HITACHI LTD
发明人： MUNAKATA CHUSUKE , YAGI KUNIHIRO , MOTOOKA TERUAKI
IPC分类号： G01R31/265 , G01R31/26

3. 发明专利

DE3270969D1 WAFER TRANSPORT SYSTEM 未知
公开(公告)号：DE3270969D1
公开(公告)日：1986-06-12
申请号：DE3270969
申请日：1982-06-15
申请人： HITACHI LTD
发明人： YAGI KUNIHIRO , USUI HIROO , SUZUKI MICHIO , HASHIMOTO NORIKAZU , MATUOKA SADAO
IPC分类号： H01J37/317 , C23C14/56 , H01L21/677 , H01L21/68

4. 发明专利

CA1188802A METHOD OF INFORMATION RECORDING ON A SEMICONDUCTOR WAFER 未知
公开(公告)号：CA1188802A
公开(公告)日：1985-06-11
申请号：CA386251
申请日：1981-09-18
申请人： HITACHI LTD
发明人： MUNAKATA CHUSUKE , YAGI KUNIHIRO , MIYAZAKI MASARU , YONEDA SHIYOUZOU
IPC分类号： G11C17/00 , G03C1/705 , G11B7/241 , G11B9/08 , G11B11/00 , G11C11/23 , G11C11/30 , G11C11/42 , G11C13/04 , H01L31/08 , H04N1/21 , G11B9/10 , G11B7/00
摘要： An information recording method is disclosed in which a p- or n-type semiconductor wafer is irradiated with an energetic beam such as an electron beam whereby to control, e.g., decrease or increase, the generation of a surface photovoltage at the irradiated area. Information can thus be recorded on the wafer.

5. 发明专利

JPH1072262A ORGANIC BINDER FOR MOLDING CERAMIC, DISPERSION LIQUID, GREEN SHEET AND PRODUCTION OF CERAMIC SINTERED COMPACT OR MULTILAYER INTERCONNECTION CERAMIC CIRCUIT BOARD 失效
公开(公告)号：JPH1072262A
公开(公告)日：1998-03-17
申请号：JP16239497
申请日：1997-06-19
申请人： HITACHI LTD
发明人： KATSUMURA NOBUHITO , SHOJI FUSAJI , YAGI KUNIHIRO , SENGOKU NORIO
IPC分类号： C04B35/622 , C04B35/632 , C08F8/12 , C08L29/04 , C08L29/14 , C08L31/04 , C08L33/02 , C08L39/06 , C08L71/02
摘要： PROBLEM TO BE SOLVED: To obtain an org. binder for molding ceramic capable of preparing a slurry having satisfactory moldability with an aq. solvent and giving a green sheet excellent in flexibility, formability, dispersibility, etc., by using polyvinyl acetal consisting of specified repeating units in combination with a water-soluble org. high molecular compd. SOLUTION: This org. binder for molding ceramic contains polyvinyl acetal and a water-soluble org. high molecular compd. The polyvinyl acetal consists of 1st repeating units represented by formula I (R is H or 1-12C alkyl, R is H, 1-12C alkyl, 3-8C cycloalkyl or a 2-12C arom. group) and 2nd repeating units represented by formula II (R is H, 1-8C alkyl, a 1-8C arom. group, 2-9C aliphatic acyl and/or 2-9C arom. acyl). The number of the 1st units is 10-80% of the total number of all the repeating units in one molecule and that of the 2nd unit is >=10%.

6. 发明专利

JPS628022B2 失效
公开(公告)号：JPS628022B2
公开(公告)日：1987-02-20
申请号：JP5179381
申请日：1981-04-08
申请人： HITACHI LTD
发明人： MUNAKATA TADASUKE , YAGI KUNIHIRO , MOTOOKA TERUAKI
IPC分类号： G01R31/26 , G01N21/956 , H01L21/66

7. 发明专利

JPS61292914A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61292914A
公开(公告)日：1986-12-23
申请号：JP13409585
申请日：1985-06-21
申请人： HITACHI LTD
发明人： HIRAIWA ATSUSHI , YAGI KUNIHIRO , SUNAMI HIDEO , KURE TOKUO
IPC分类号： H01L27/04 , H01L21/265 , H01L21/822
摘要： PURPOSE:To equalize concentration without extremely increasing the thickness of an impurity layer by forming a mask for shaping a groove and implanting ions plural times. CONSTITUTION:A fixed oxide film 5 for isolating an element is formed to a P-type surface azimuth (100) silicon substrate 1, a mask having an opeing section only in a groove forming section and consisting of an silicon nitride film 14 and an silicon oxide film 15 is shaped, and As is introduced through implantation twice, thus selectively inducing As only to a section 2 just under the opening section. The whole is thermally treated under a nitrogen atmosphere and a thermal oxide film 13 is removed by using a hydrofluoric acid solution, the Si substrate 1 is etched through a reactive ion etching method employing C2Br2F4 as a reaction gas, the silicon oxide film 15 is removed by using the hydrofluoric acid solution, and the silicon nitride film 14 is removed by employing a hot phosphoric acid solution, thus completely forming the groove with the impurity layer 2 composed of As along the surface.

8. 发明专利

JPS60115254A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS60115254A
公开(公告)日：1985-06-21
申请号：JP22203683
申请日：1983-11-28
申请人： HITACHI LTD
发明人： KURE TOKUO , KAWAMOTO YOSHIFUMI , SUNAMI HIDEO , YAGI KUNIHIRO
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PURPOSE:To obtain a semiconductor device having a concave-shaped capacitor superior in dielectric strength by making the thickness of films at corners of a concave portion thicker than that of an insulating film on the side of the concave portion to reinforce dielectric strength at the corners of the concave portion. CONSTITUTION:A concave portion 1 is formed by photo-etching on an Si substrate 5, and an SiO2 film 9 and an Si3N4 film are formed by thermal oxidation and CVD and then the films are subjected to anisotropic etching to leave an Si3N4 film 11 only on the side wall of the concave portion. An SiO2 film 12 having the thickness of two times or so that of the film used as an insulating film of a capacitor is formed by thermal oxidation and the Si3N4 film 11 is removed, thereby forming an SiO2 film 13 serving as a main insulating film of the capacitor and a polycrystalline Si electrode 7. SiO2 films at upper corners 14 and lower corners 15 are formed thicker than that of the SiO2 film 13 on the side wall, that is, the main insulating film, thereby allowing the dielectric strength at the corners of the concave portion to be remarkably improved and the number of failures in the dielectric strength to be remarkably reduced.

9. 发明专利

JPS5841491A INFORMATION RECORDING METHOD 失效
公开(公告)号：JPS5841491A
公开(公告)日：1983-03-10
申请号：JP13857881
申请日：1981-09-04
申请人： HITACHI LTD
发明人： MUNAKATA TADASUKE , MIYAZAKI MASARU , YAGI KUNIHIRO , YONEDA SHIYOUZOU
IPC分类号： G11C17/00 , G11B9/08 , G11B11/00 , G11C11/41
摘要： PURPOSE:To reduce the process and to manufacture recording media inexpensively, by promoting the generation of a surface optical voltage and recording information, while irradiating charged particle rays on a semiconductor single substrate having a slight surface potential. CONSTITUTION:An oxide film 12, having 10-50Angstrom is formed on a semiconductor single substrate 3, e.g., P-Si wafer, in recording and a simple depletion layer only is formed accordingly. A specified amount of electron beam 5 is irradiated on this surface. An output value of a surface optical voltage obtained from this irradiated region is much larger than that obtained from non-irradiated regions. Then, binary evcoded information and the like can be written. In reading out, this recording medium is located between an electrode 14 and a transparent electrode 13, and an AC modulation optical beam 19 is irradiated through the electrode 13 on the recording medium for full surface scanning. The change in a minute surface optical voltage obtained from the irradiated region can be detected at a synchronizing detection amplifier 15.

10. 发明专利

JPS57206046A WAFER CONVEYING DEVICE 失效
公开(公告)号：JPS57206046A
公开(公告)日：1982-12-17
申请号：JP9095281
申请日：1981-06-15
申请人： HITACHI LTD
发明人： YAGI KUNIHIRO , USUI HIROO , SUZUKI MICHIO , HASHIMOTO TETSUKAZU , MATSUOKA SADAO
IPC分类号： H01J37/317 , C23C14/56 , H01L21/677 , H01L21/68
摘要： PURPOSE:To remove a foreign material which is attached to the wafer by providing a vacuum exhausting hole in the vicinity of a wafer inserting hole part or a wafer feeding hole part in a vacuum exhausting chamber. CONSTITUTION:The vacuum exhausting hole D1 is provided at the inserting hole part of a spare vacuum exhausting chamber 12. The Si wafer is slidden into the spare exhausting chamber 12 on a sliding plate 37 through the inserting hole part 35 and mounted on a stage 38. The sliding plate 37 has a perforated structure 36. Dust, which falls when the wafer is slidden and passes, is sucked from the vacuum exhausting hole 33 through the perforated structure 36.

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