专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

DE3813665A1 未知
公开(公告)号：DE3813665A1
公开(公告)日：1988-11-03
申请号：DE3813665
申请日：1988-04-22
申请人： HITACHI LTD
发明人： IZAWA RYUICHI , KURE TOKUO , IIJIMA SHIMPEI , TAKEDA EIJI , IGURA YASUO , HAMADA AKEMI , HIRAIWA ATSUSHI
IPC分类号： H01L21/336 , H01L29/423 , H01L29/49 , H01L29/78 , H01L21/265 , H01L27/08

2. 发明专利

DE69331692D1 未知
公开(公告)号：DE69331692D1
公开(公告)日：2002-04-18
申请号：DE69331692
申请日：1993-09-14
申请人： HITACHI LTD
发明人： UMEMURA SHINICHIRO , KAWABATA KENICHI , UCHIDA KENKO , YASUDA KENJI , WADA YASUO , HIRAIWA ATSUSHI
IPC分类号： A61B17/22 , A61N7/00 , A61N7/02
摘要： This invention is directed to accomplish an ultrasonic remedial apparatus for generating a living body action such as cavitation suitable for remedy of a malignant tumor, a thrombus and a calculus, an ultrasonic wave diagnostic apparatus for generating cavitation to enhance an ultrasonic echo image of a blood stream, etc., and utilizing its reflection capacity, an ultrasonic chemical reaction promotion apparatus, an ultrasonic washing apparatus, an ultrasonic sterilizer, etc., by providing an ultrasonic irradiation apparatus for efficiently generating acoustic cavitation. Irradiation focus code signals for defining focal positions and sound pressure distribution shapes of irradiation sound fields of a fundamental frequency waves and harmonics are applied from a main control circuit to driving phase generation circuits, respectively. The driving phases thus generated are applied to driving signal generation circuits and the resulting driving signals are applied to device driving circuits, respectively, so that a group of the fundamental frequency devices and a group of harmonic devices are driven, respectively. The driving phases are controlled so that the fundamental frequency wave and the harmonic waves are superposed with one another in a medium near the focus, and acoustic cavitation is generated locally and efficiently.

3. 发明专利

DE3915594C2 未知
公开(公告)号：DE3915594C2
公开(公告)日：1994-06-09
申请号：DE3915594
申请日：1989-05-12
申请人： HITACHI LTD
发明人： HIRAIWA ATSUSHI , IIJIMA SHINPEI , YUGAMI JIRO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/94 , H01G4/08 , G11C11/24
摘要： A capacitor having a first electrode, a thin insulator formed on said first electrode and a second electrode formed on said insulator wherein said first and second electrodes are composed of semiconductors that are of complementary conductivity type. Therefore, the current that flows through the capacitor insulator is efficiently suppressed while the thickness of the insulator is decreased, making it possible to realize a capacitor of a small area yet having a large capacitance.

4. 发明专利

DE2931032A1 未知
公开(公告)号：DE2931032A1
公开(公告)日：1980-02-14
申请号：DE2931032
申请日：1979-07-31
申请人： HITACHI LTD
发明人： MUKAI KIICHIRO , HARADA SEIKI , MURAMATSU SHINICHI , HIRAIWA ATSUSHI , TAKAHASHI SHIGERU , USAMI KATSUHISA , IWATA SEIICHI , ITO SATORU , YOSHIMI TAKEO
IPC分类号： H01L21/768 , H01L21/312 , H01L21/316 , H01L21/318 , H01L23/29 , H01L23/31 , H01L23/522 , H01L23/30
摘要： A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm3.

5. 发明专利

DE69331692T2 未知
公开(公告)号：DE69331692T2
公开(公告)日：2002-10-24
申请号：DE69331692
申请日：1993-09-14
申请人： HITACHI LTD
发明人： UMEMURA SHINICHIRO , KAWABATA KENICHI , UCHIDA KENKO , YASUDA KENJI , WADA YASUO , HIRAIWA ATSUSHI
IPC分类号： A61B17/22 , A61N7/00 , A61N7/02
摘要： This invention is directed to accomplish an ultrasonic remedial apparatus for generating a living body action such as cavitation suitable for remedy of a malignant tumor, a thrombus and a calculus, an ultrasonic wave diagnostic apparatus for generating cavitation to enhance an ultrasonic echo image of a blood stream, etc., and utilizing its reflection capacity, an ultrasonic chemical reaction promotion apparatus, an ultrasonic washing apparatus, an ultrasonic sterilizer, etc., by providing an ultrasonic irradiation apparatus for efficiently generating acoustic cavitation. Irradiation focus code signals for defining focal positions and sound pressure distribution shapes of irradiation sound fields of a fundamental frequency waves and harmonics are applied from a main control circuit to driving phase generation circuits, respectively. The driving phases thus generated are applied to driving signal generation circuits and the resulting driving signals are applied to device driving circuits, respectively, so that a group of the fundamental frequency devices and a group of harmonic devices are driven, respectively. The driving phases are controlled so that the fundamental frequency wave and the harmonic waves are superposed with one another in a medium near the focus, and acoustic cavitation is generated locally and efficiently.

6. 发明专利

DE3813665C2 未知
公开(公告)号：DE3813665C2
公开(公告)日：1996-02-29
申请号：DE3813665
申请日：1988-04-22
申请人： HITACHI LTD
发明人： IZAWA RYUICHI , KURE TOKUO , IIJIMA SHIMPEI , TAKEDA EIJI , IGURA YASUO , HAMADA AKEMI , HIRAIWA ATSUSHI
IPC分类号： H01L21/336 , H01L29/423 , H01L29/49 , H01L29/78 , H01L21/265 , H01L27/08

7. 发明专利

DE3915594A1 未知
公开(公告)号：DE3915594A1
公开(公告)日：1989-11-30
申请号：DE3915594
申请日：1989-05-12
申请人： HITACHI LTD
发明人： HIRAIWA ATSUSHI , IIJIMA SHINPEI , YUGAMI JIRO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L29/94
摘要： A capacitor having a first electrode, a thin insulator formed on said first electrode and a second electrode formed on said insulator wherein said first and second electrodes are composed of semiconductors that are of complementary conductivity type. Therefore, the current that flows through the capacitor insulator is efficiently suppressed while the thickness of the insulator is decreased, making it possible to realize a capacitor of a small area yet having a large capacitance.

8. 发明专利

DE3322680A1 未知
公开(公告)号：DE3322680A1
公开(公告)日：1984-01-05
申请号：DE3322680
申请日：1983-06-23
申请人： HITACHI LTD
发明人： SUZUKI KEIZO , HIRAIWA ATSUSHI , TAKAHASHI SHIGERU , NISHIMATSU SHINGERU , NINOMIYA KEN , OKUDAIRA SADAYUKI
IPC分类号： C23C16/24 , C01B21/068 , C01B33/02 , C23C16/34 , C23C16/511 , C30B25/10 , H01L21/205 , H01L21/203 , H01L21/56 , H01L31/18 , H05H1/46 , C30B25/08 , C23C7/00
摘要： A method for growing a silicon-including film is disclosed in which the above film is grown on a surface of a substrate by using, as a discharge gas, a halogenide silicon gas or a gas mixture containing a halogenide silicon gas in a plasma deposition apparatus including a vacuum chamber, means for supplying microwave power to the vacuum chamber, means for forming a magnetic field in at least part of the vacuum chamber, means for introducing the discharge gas into the vacuum chamber, and means for holding the substrate within the vacuum chamber.

9. 发明专利

CA1135874A SEMICONDUCTOR DEVICE PASSIVATION 未知
公开(公告)号：CA1135874A
公开(公告)日：1982-11-16
申请号：CA331729
申请日：1979-07-12
申请人： HITACHI LTD
发明人： MUKAI KIICHIRO , HARADA SEIKI , MURAMATSU SHINICHI , HIRAIWA ATSUSHI , TAKAHASHI SHIGERU , USAMI KATSUHISA , IWATA SEIICHI , ITO SATORU , YOSHIMI TAKEO
IPC分类号： H01L21/768 , H01L21/312 , H01L21/316 , H01L21/318 , H01L23/29 , H01L23/31 , H01L23/522 , H01L29/14
摘要： SEMICONDUCTOR DEVICE The invention relates to semiconductor devices such as ICs and LSIs. When such devices are encased in plastic an intervening passivation layer must be provided to act as a barrier against moisture and impurities. The passivation layers used in the past have been unsatisfactory and, in particular, tend to crack. The invention provides a novel passivation layer comprising silicon nitride containing 0.8 - 5.9 weight-% of hydrogen. The novel layer is an effective barrier and has much reduced tendency to crack.

10. 发明公开

EP0887621A4 METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE 失效
标题翻译：方法和装置的晶体缺陷对晶体表面测量
公开(公告)号：EP0887621A4
公开(公告)日：2000-12-20
申请号：EP96906053
申请日：1996-03-15
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： TAKEDA KAZUO , ISHIDA HIDETSUGU , HIRAIWA ATSUSHI , TAJIMA TAKESHI , WATASE SHINICHIRO
IPC分类号： G01N21/95 , G01N21/47
CPC分类号： G01N21/9505
摘要： In a measuring method by which internal defects of a crystal are detected using scattered light, it is made possible to measure the size, depth from the surface and position of each internal defect of the sample with a resolution shorter than the wavelength of the scattered light. The sample is scanned with two light beams which have different wavelengths penetrating the sample to different depths, one being more than three times as large as the other, the intensity of scattered light by an internal defect for either wavelength is measured, the size of the defect is found from the intensity of the scattered light of the longer wavelength, and the depth and position of the defect are found from the ratio of the intensity of the scattered light of the long wavelength to that of the other wavelength. The found depth, position, and size of the defect are displayed in the form of in-plane distribution of a wafer. According to the wide-area surface measurement a camera is moved to the position of a specific defect of the defects detected, the defect is observed by scanning the sample with the two light beams having different wavelengths and the depth, position, and size of the defect are found similarly from the picture data obtained from the scattered light of two wavelengths. By the method of this invention, the sizes, depths, and positions of the defects can be measured by examining the entire surface of the sample and by observing the image of the defect one by one.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式