专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2002075968A ION BEAM MACHINING SYSTEM AND PROCESSING METHOD OF SUBSTRATE 失效
公开(公告)号：JP2002075968A
公开(公告)日：2002-03-15
申请号：JP2000260160
申请日：2000-08-30
申请人： HITACHI LTD
发明人： SUGIURA TAKAHARU , HISAMOTO HIROSHI , OGURA SATOSHI , OISHI SEITARO
IPC分类号： B23K15/00 , B23K101/40 , H01J37/09 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To obtain an ion beam machining system in which a fine pattern thin element can be machined by preventing charge up on the surface of a substrate at the time of opening/closing a shutter plate thereby suppressing electrostatic breakdown of the element. SOLUTION: The ion beam machining system comprises an ion source 12 being introduced with gas and generating plasma, an ion source electrode 19 for leading out plasma generated by the ion source 12 as an ion beam IB, a unit 20 for neutralizing the ion beam IB, a processing chamber 15 for milling a substrate 13 placed therein by irradiating it with the ion beam IB, an evacuator 16 for evacuating the processing chamber 15, and a shutter plate 22 for shielding the substrate 13 from the ion beam IB before and after ion beam machining. A power supply 23 for applying a voltage to the shutter plate 22 at the time of opening/closing the shutter plate 22 is provided and the magnitude and timing of the applying voltage are controlled by means of a power supply controller 24.

2. 发明专利

JP2002353172A ION BEAM WORKING DEVICE AND METHOD THEREFOR 失效
公开(公告)号：JP2002353172A
公开(公告)日：2002-12-06
申请号：JP2001153690
申请日：2001-05-23
申请人： HITACHI LTD
发明人： KIMURA YOSHIHIRO , HISAMOTO HIROSHI , SUGIURA TAKAHARU , NARITA YUSUKE
IPC分类号： G21K5/04 , C23C14/46 , H01J37/305 , H01J37/317 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To suppress drastic changes in the potential on a working object surface at opening and closing of a shutter plate. SOLUTION: When irradiating a substrate 38 with an ion beam IB from an ion source 10 and neutralizing the ion beam IB, by using neutralizing electrons e generated by a microwave neutralizer 14, the substrate is shaded with the shutter plate 62 prior to and after milling the substrate 38, the voltage of a power source 34 is lowered at opening and closing of the shutter plate 62, the irradiated quantity of the ion beam IB is limited and the charge-up of the surface of the substrate 38 is suppressed.

3. 发明专利

JP2000173800A PLASMA PROCESSING DEVICE 失效
公开(公告)号：JP2000173800A
公开(公告)日：2000-06-23
申请号：JP34292198
申请日：1998-12-02
申请人： HITACHI LTD
发明人： SUGIURA TAKAHARU , SETOYAMA HIDETSUGU , ISHIGURO KOJI , SEKI HIROBUMI , KITAZAWA SATOSHI , UCHIKAWA SADAO
IPC分类号： H01L21/302 , C23C16/50 , C23C16/505 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To uniformize plasma density in a reaction chamber. SOLUTION: Permanent magnets m1-m16 for forming cusp magnetic fields are arranged on the outside wall surface of a reaction chamber 12, permanent magnets M1-M8 are arranged on both sides of microwave inlet ports 32-38, and the cusp fields 42 are formed in the reaction chamber 12 by means of the respective permanent magnets. The cusp fields are formed uniformly, and the plasma density is improved by forming each of the openings of the microwave inlet ports 32-38 into an elongated shape.

4. 发明专利

JP2002367921A Ion implanter 审中-公开
标题翻译：离子植入物
公开(公告)号：JP2002367921A
公开(公告)日：2002-12-20
申请号：JP2001171839
申请日：2001-06-07
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SUGIURA TAKAHARU , MERA KAZUO , NAKANO YASUKI
IPC分类号： C23C14/48 , H01J37/20 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To suppress metallic contamination.
SOLUTION: A rotary disc 20 is accommodated in a treatment chamber 16 evacuated to a vacuum, a plurality of wafer holders 28 are fixed to a ring 24 of the rotary disc 20, and a silicon wafer 30 is held by each wafer holder 28. In the process of rotating the silicon wafer 30 along with the rotation of the rotary disc 20, the silicon wafer 30 is heated with a lamp heater 32, and also an ion beam drawn our of an ion source 10 is applied to the silicon wafer 30. At this time, heat energy by the application of the ion beam is raised, and heat energy by the heating of the lamp heater 32 is lowered, thereby restraining generation of metals from the lamp heater 32 during ion implantation.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：抑制金属污染。解决方案：旋转盘20容纳在抽真空的处理室16中，多个晶片保持器28固定到旋转盘20的环24，并且硅晶片30由每个晶片保持器28保持。随着旋转盘20的旋转而旋转硅晶片30的过程，用灯加热器32加热硅晶片30，并且将离子源10的离子束也施加到硅晶片30。此时，通过施加离子束的热能被提高，并且通过灯加热器32的加热的热能降低，从而在离子注入期间抑制来自灯加热器32的金属的产生。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式