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1. 发明专利

JP2000057986A ION BEAM WORKING DEVICE 失效
公开(公告)号：JP2000057986A
公开(公告)日：2000-02-25
申请号：JP22613298
申请日：1998-08-10
申请人： HITACHI LTD
发明人： FUJISAWA TATSUYA , OISHI SEITARO , ONUKI HISAO , HASHIMOTO ISAO
IPC分类号： H01J37/20 , H01J37/16 , H01J37/305 , H01L21/302 , H01L21/3065 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To improve operatability by reducing human movement. SOLUTION: A vacuum chamber door 28 is installed on the front side of a vacuum chamber 12, and a sample holder 48 is connected to the vacuum chamber door 28 through a rotary shaft 44 and a disc 46, and an ion source 16 is arranged on the right-side face side of the vacuum chamber 12 so as to be put on and taken off freely, and a control board 18 is arranged on the left-side face side of the vacuum chamber 12. An operating face 60 of the vacuum chamber door 28, supported freely drawably by a linearly-reciprocating motion mechanism 30, and an operating face 62 of the control board 18 are arranged on roughly the same plane.

2. 发明专利

JPH10317171A SAMPLE SUPPORTING DEVICE 失效
公开(公告)号：JPH10317171A
公开(公告)日：1998-12-02
申请号：JP13193597
申请日：1997-05-22
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO , TANAKA SHIGERU , SEKIMOTO SHINYA
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/68 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To increase the number of samples to be attached in the same area, and to easily attach/detach the samples by pressing the sample arranged between an inner pressing piece and an outer pressing piece mounted on a sample stage against the pressing piece on one side by the pressing piece on the other side, and fixing the sample. SOLUTION: In a vacuum chamber, a sample mounted on a sample stage of a rotating sample holder is irradiated with the ion beam in which the introduced ion gas is accelerated by acceleration electrodes. An inner pressing piece 30 and an outer pressing piece 31 are movably mounted by screws 32 on a sample stage 14A of a sample supporting device of an ion beam machining equipment. A plurality of samples 13A-13D are arranged between the pressing pieces, held and temporarily fixed thereto. The screws 32 of the outer pressing piece 31 are loosened while the inner pressing piece 30 is fixed, the samples 13A-13D are pressed against the inner pressing piece 30 through the outer pressing piece 31, and then, the screws 32 are tightened to fix the samples between the pressing pieces.

3. 发明专利

JPH0941165A ION BEAM MILLING DEVICE 失效
公开(公告)号：JPH0941165A
公开(公告)日：1997-02-10
申请号：JP19069995
申请日：1995-07-26
申请人： HITACHI LTD
发明人： FUJISHIRO MASAHARU , OISHI SEITARO , ISHIZAKI HIROSHI , TOGAWA EISEI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform etching accurately by a target etching amount in the device using a gaseous reactant as a gas to be formed into a plasma. SOLUTION: In this device, when a gaseous reactant is formed into a plasma, a carbide is produced and deposited on a decelerating electrode 11 and, accordingly, the decelerated current value is increased to change the etching rate. At this time, the decelerated current value Idec , is measured with a decelerated current measuring device 14 and, based on this measured decelerated current value Idec , the actual etching amount Etb at a reduced etching rate due to the increase in decelerated current is estimated by an etching amount estimation section 34. The deviation Etc of the actual etching amount Etb from a target etching amount E is determined by a deviation calculation section 35 and the milling time Tm1 is newly determined by a milling time calculation section 36 so that the deviation Etc becomes substantially zero and the determined milling time Tm1 is instructed to respective power source circuits by a controlled variable instruction section 32.

4. 发明专利

JPH08227676A ION SOURCE 失效
公开(公告)号：JPH08227676A
公开(公告)日：1996-09-03
申请号：JP3212595
申请日：1995-02-21
申请人： HITACHI LTD
发明人： OISHI SEITARO , SEKIMOTO SHINYA , KUROGANE MASAHARU
IPC分类号： H01J27/02 , H01J27/08 , H01J37/08
摘要： PURPOSE: To provide an ion source having an ion source electrode with a diameter large enough to take out uniform and stable ion beam current. CONSTITUTION: Regarding an ion source made of a plasma chamber 1 for converting introduced gases into plasma, as well as ion source electrodes for taking out ions from the chamber 1, the electrodes 5 and 6 are divided as a means for forming a large diameter, and each block of the divided electrodes 5 and 6 is combined and made independent. A gap formed between the adjacent divided blocks is closed with a cross presser 11. Also, a gap between acceleration and deceleration electrodes 5 and 6 at an intermediate electrode section is made continuous with insulation spacers 7 and 8.

5. 发明专利

JPH07105893A ION BEAM TREATING DEVICE, AND METHOD FOR WORKING IT 失效
公开(公告)号：JPH07105893A
公开(公告)日：1995-04-21
申请号：JP24651993
申请日：1993-10-01
申请人： HITACHI LTD
发明人： HIYOSHI YASUO , OTSUBO TORU , OKAWA TAKAKO , TOBA TAMAKI , OISHI SEITARO , HASHIMOTO ISAO
IPC分类号： H01J27/18 , H01J37/08 , H01J37/30 , H01L21/265
摘要： PURPOSE:To generate a plasma having an uniform density within a wide vacuum by supplying a microwave to a plasma generating chamber through a plurality of slits. CONSTITUTION:A reaction gas is supplied from a gas supply pipe 17 to make a plasma generating chamber 15 into the vacuum of a prescribed pressure. Microwave is then oscillated by a magnetron oscillator 14. The oscillated microwave 9 is propagated in a waveguide 10, amplified by a cavity resonator 14, and fully extended over the aperture of the resonator 13. Charges are stored on respective double ends of four slits 16 of a slit plate 51 mounted on the resonator 13, and the microwave 9 is emitted to the outside of the resonator 13 through the four slits 16 according to the change of the charges. The microwave 9 emitted from the slits is passed through a quartz plate 20 and supplied to the generating chamber 15. Since the microwave 9 is advanced in the space in the generating chamber 15 while being spread from the four slits 16, they are uniformly spread over the whole space in the generating chamber 15.

6. 发明专利

JPH05217947A METHOD AND DEVICE FOR ION BEAM PROCESSING 失效
公开(公告)号：JPH05217947A
公开(公告)日：1993-08-27
申请号：JP2115892
申请日：1992-02-06
申请人： HITACHI LTD
发明人： ONUKI HISAO , OISHI SEITARO , KUROGANE MASAHARU
IPC分类号： C23F4/00 , G21K5/04 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide an ion beam processing method which realizes reinforcement of neutralizer line and carries out stable treatments successively. CONSTITUTION:In an ion beam processing method whereby treatment gas is introduced to a treatment chamber 2 and ion beam 8 is extracted, thermion is radiated from a neutralizer line 18, the ion beam 8 is made to pass through the thermion, and the ion beam 8 is neutralized, irradiated to a sample 5 and treated, O2 gas in addition to the treatment gas is introduced into the treatment chamber 2 during or after treatment of the sample 5, O2 beam is extracted and O2 beam is made to impinge on the neutralizer line 18.

7. 发明专利

JPH05106036A VACUUM TREATING APPARATUS 失效
公开(公告)号：JPH05106036A
公开(公告)日：1993-04-27
申请号：JP7405392
申请日：1992-03-30
申请人： HITACHI LTD
发明人： OISHI SEITARO , HASHIMOTO ISAO
IPC分类号： C23C14/46 , C23C14/56 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a vacuum treating apparatus having an increased exhaust ing rate and capable of maintaining a high throughput while the reduction of conductance is evaded without using a diffusion pump. CONSTITUTION:An exhaust apparatus for evacuating a vacuum chamber is constituted of a turbo-molecular pump 10 connected with a vacuum chamber 2 via piping 6 and a cold trap 7 provided on the way between the turbo- molecular pump 10 and the piping 6 to the above vacuum chamber 2, and the cold trap 7 has conductance in the same degree as that of the above piping 6.

8. 发明专利

JPH04351838A NEUTRALIZATION UNIT OF ION BEAM DEVICE 失效
公开(公告)号：JPH04351838A
公开(公告)日：1992-12-07
申请号：JP12342791
申请日：1991-05-28
申请人： HITACHI LTD
发明人： IGA TAKASHI , ONO YASUNORI , NATSUI KENICHI , OISHI SEITARO , ONUKI HISAO
IPC分类号： C23F4/00 , H01J37/077 , H01J37/305 , H01L21/265
摘要： PURPOSE:To achieve a small neutralization unit of large current, in which electron current that can be extracted is not limited by the amount of ions flown in the inner wall of a discharge chamber of the neutralization unit. CONSTITUTION:A coaxial line 31 for supplying microwave power and a gas guide 24 are connected to one end of a neutralization unit discharge chamber 28, and a small hole 34 is opened on the other end. An annular permanent magnet 29 is arranged on the outer periphery of the neutralization unit discharge chamber 28, and when a negative electric potential to ground is given to a neutralization unit 23 by a power source 41, an electron 41 is extracted from a plasma 40 in the neutralization unit discharge chamber 28, and an ion beam 37 is neutralized. Ions 42 of the same amount of the extracted electrons 41 are flown into the inner wall of the neutralization unit discharge chamber 28.

9. 发明专利

JPH02213039A ION BEAM WORKING DEVICE AND ITS ELECTRIC DISCHARGE WASHING METHOD 失效
公开(公告)号：JPH02213039A
公开(公告)日：1990-08-24
申请号：JP3409489
申请日：1989-02-14
申请人： HITACHI LTD
发明人： KADOOKA HIDESHI , OISHI SEITARO
IPC分类号： G21B1/11 , B23K15/00 , C23F4/00 , G21B1/00 , G21B1/25 , H01J37/248 , H01J37/305 , H01J37/317 , H05H7/00
摘要： PURPOSE:To enable electric discharge washing without providing a dedicated plasma source by switching between acceleration and deceleration power supplies. CONSTITUTION:An ion beam working device comprises a filament 28, an acceleration electrode 18, an auxiliary (deceleration) electrode 20 and a change-over switch 38 between an acceleration power supply 34 and a deceleration power supply 40. Ion beam working is performed with the auxiliary electrode 20 connected to the deceleration power supply 40 by means of the change-over switch 38C, 38A. On the other hand, electric discharge washing is performed by plasma produced by glow discharge between the filament 28, the acceleration electrode 18 and the auxiliary electrode 20 with the same potential obtained at the acceleration electrode 18 and the auxiliary electrode 20 through switch 38B-38C connection. Also, plasma washing is performed with a neutralizer installed between work 12 and the anode group, and when the fouling level within a chamber 10 has reached a specified level, glow discharge is stopped.

10. 发明专利

JPS6454729A PLASMA PROCESSING EQUIPMENT 失效
公开(公告)号：JPS6454729A
公开(公告)日：1989-03-02
申请号：JP21009687
申请日：1987-08-26
申请人： HITACHI LTD
发明人： NATSUI KENICHI , SATO TADASHI , ONO YASUNORI , HAKAMATA YOSHIMI , MORIJIRI MAKOTO , SAITO MASAKATSU , AOKI SHIGEO , OISHI SEITARO
IPC分类号： H01L21/302
摘要： PURPOSE:To control the working angle of a slant face section by arranging a magnetic field generating means on the rear side of a working surface and changing the incident angle of ions irradiating a sample. CONSTITUTION:Current is supplied to a filament 9 from a power supply 11, and voltage is applied between a plasma production chamber vessel 20 and the filament 9 by a power supply 12, thus producing plasma in a plasma production chamber 8. The plasma is led out into a treating chamber 13 from the production chamber 8 by leading-out electrodes 14, 15. The working surface of a substrate 3 is irradiated with ions positively charged from the plasma. The incident angle of ions at that time is changed by the position of a permanent magnet 5 disposed on the rear side of the substrate 3. The permanent magnet 5 is moved in parallel with the substrate 3, thus smoothly working the slant face section of the substrate.

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