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1. 发明专利

JP2007287538A Accelerator 有权
标题翻译：加速器
公开(公告)号：JP2007287538A
公开(公告)日：2007-11-01
申请号：JP2006115247
申请日：2006-04-19
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TSUCHIDA KAZUTERU , SEKI HIROBUMI
IPC分类号： H05H9/00 , G21G1/10 , H05H7/14 , H05H13/00
摘要： PROBLEM TO BE SOLVED: To provide an accelerator capable of reducing radioactivity after ending usage.
SOLUTION: Gold plating is applied to the inside surfaces facing to an ion beam R of a quadrupole electrode 13 of this accelerator 10 for irradiating a target 20 with protons by accelerating them by an RFQ 12a and a DTL 12b, and drift tubes 14, the inside surface of a beam transmission duct 15, and a surface of a collimator electrode 15b. Since the half-life period of
197 Hg generated by (p, n) nuclear reaction is short in the case of gold, the radioactivity level after ending the use of the accelerator can be reduced. As a result, a disposal cost can be reduced as compared with a conventional one. When gold plating is not applied to the parts of the accelerator, since the half-life periods of generated
65 Zn and
56 Co are long, the radioactivity level is increased, and the disposal cost is increased.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够在使用结束后能够降低放射性的加速器。解决方案：将金电镀施加到面向该加速器10的四极电极13的离子束R的内表面，用于通过RFQ 12a和DTL 12b加速它们用质子照射靶20，以及漂移管 14，光束传输管道15的内表面和准直器电极15b的表面。由于（p，n）核反应产生的 197 Hg的半衰期在金的情况下较短，所以可以减少在使用加速器之后的放射性水平。结果，与传统的相比，可以降低处理成本。当不对加速器的部分进行镀金时，由于生成的 65 Zn和 56 Co的半衰期长，因此放射性水平升高，处理费用增加。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006284337A Radioisotope manufacturing equipment 有权
标题翻译：无线电制造设备
公开(公告)号：JP2006284337A
公开(公告)日：2006-10-19
申请号：JP2005103936
申请日：2005-03-31
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： OKAZAKI TAKASHI , TSUCHIDA KAZUTERU , SEKI HIROBUMI , UMEGAKI KIKUO
IPC分类号： G21G1/10 , G21K5/04 , G21K5/08 , H05H6/00
摘要： PROBLEM TO BE SOLVED: To provide radioisotope manufacturing equipment capable of obtaining with high yield, nuclide contained in radioactive medicine administered in vivo to an examinee in the PET test. SOLUTION: The radioisotope manufacturing equipment (10) comprises a transmitting membrane (22) forming a boundary between a vacuum region (U) and stuff (23) in a target (20) irradiated with accelerated ion beam (R), and the first clip (21) supporting the transmitting membrane (22) which a plurality of passages (27) where the ion beam (R) passes. The material of the first clip (21) is alumina dispersion strengthened copper. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够以高产率获得的放射性同位素制造设备，其在PET测试中向受检者在体内施用的放射性药物中所含的核素。解决方案：放射性同位素制造设备（10）包括形成被加速离子束（R）照射的靶（20）中的真空区域（U）和填料（23）之间的边界的透射膜（22），以及所述第一夹子（21）支撑所述离子束（R）通过的多个通道（27）的所述透射膜（22）。第一夹子（21）的材料是氧化铝分散强化铜。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005283137A Device for manufacturing radioisotope and device for manufacturing radioactive pharmaceutical 有权
标题翻译：制造放射性药物的装置和用于制造放射性药物的装置
公开(公告)号：JP2005283137A
公开(公告)日：2005-10-13
申请号：JP2004092915
申请日：2004-03-26
申请人： Accsys Technology Inc , Hitachi Ltd , アクシステクノロジーインコーポレイテッド , 株式会社日立製作所
发明人： OKAZAKI TAKASHI , TSUCHIDA KAZUTERU , SEKI HIROBUMI , HAMM ROBERT W
IPC分类号： G21F3/00 , A61K51/00 , A61K51/12 , G21G1/10 , G21H5/02 , G21K5/00 , G21K5/04 , G21K5/08 , H01S1/00 , H05H3/02 , H05H6/00 , H05H9/00
CPC分类号： G21G1/10 , A61K51/1282
摘要： PROBLEM TO BE SOLVED: To provide a device for manufacturing radioisotopes and a device for manufacturing radioactive pharmaceuticals which make it possible to improve their radiation shielding performance and maintainability.
SOLUTION: The device for manufacturing radioisotopes comprises a linear accelerator 12 for accelerating an ion beam and irradiating a target 13a with it, high-frequency power sources 15 and 16 for supplying high-frequency waves to the linear accelerator 12 by way of coaxial tubes 15a and 16a, a target shield 13 for accommodating the target 13a, a first radiation shield 20 for covering the linear accelerator 12 and a second shield 20 which covers the side of the target shield 13 in the linear accelerator 12 and can move between the first radiation shield 20 and the target shield 13. The first radiation shield 20 can be divided and moved in diverging directions along the axial direction of the linear accelerator 12 by designating a joint 12d of the coaxial tube 16a connected to the linear accelerator 12 as the datum point.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于制造放射性同位素的装置和用于制造放射性药物的装置，其可以提高其辐射屏蔽性能和可维护性。解决方案：用于制造放射性同位素的装置包括用于加速离子束并向其照射目标13a的线性加速器12，用于向线性加速器12供应高频波的高频电源15和16，通过同轴管15a和16a，用于容纳目标13a的目标屏蔽13，用于覆盖线性加速器12的第一辐射屏蔽20和在线性加速器12中覆盖目标屏蔽13侧的第二屏蔽20，第一辐射屏蔽20和目标屏蔽13.通过指定连接到线性加速器12的同轴管16a的接头12d，可以沿着线性加速器12的轴向沿发散方向分开和移动第一辐射屏蔽20，基准点。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP2002368078A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2002368078A
公开(公告)日：2002-12-20
申请号：JP2001171903
申请日：2001-06-07
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： HOSHINO MASAKAZU , SEKI HIROBUMI , OYAMA KATSUMI , NUMATA YUKI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/76
摘要： PROBLEM TO BE SOLVED: To realize a fine structure and a high speed operation of a semiconductor device by a method wherein a narrow element isolation groove is filled with a silicon oxide film without voids.
SOLUTION: A silicon oxide film 2, a silicon nitride film 3, and a photoresist film 4 are formed on a wafer 1 as shown in (1) and (2) of Fig. 1 and a photoresist pattern 5 is formed. The nitride film 3 and the oxide film 2 are etched with the resist pattern 5 as a mask to form an aperture 6 and the resist pattern 5 is removed as shown in (3) and (4). The corners 7 of the nitride film 3 are removed by sputter etching in a high density plasma CVD device as shown in (5). A groove 8 having a depth of approximately 300 nm is formed in the wafer 1 by using the nitride film 3 as a mask and a thin silicon oxide film 9 is formed as shown in (6) and (7). Then the groove 8 is filled with a silicon oxide film. With such a constitution, as the dimensions of an element isolation region are reduced, a high speed operation and a fine structure of a semiconductor device can be realized.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了通过一种方法实现半导体器件的精细结构和高速操作，其中窄的元件隔离槽填充有无空隙的氧化硅膜。解决方案：如图1（1）和（2）所示，在晶片1上形成氧化硅膜2，氮化硅膜3和光刻胶膜4。形成光致抗蚀剂图案5。用抗蚀剂图案5作为掩模蚀刻氮化物膜3和氧化物膜2以形成孔6，并且如（3）和（4）所示去除抗蚀剂图案5。如（5）所示，通过溅射蚀刻在高密度等离子体CVD装置中除去氮化膜3的角部7。如（6）和（7）所示，通过使用氮化膜3作为掩模，在晶片1中形成深度约为300nm的槽8，形成薄的氧化硅膜9。然后，沟槽8被填充有氧化硅膜。利用这种结构，随着元件隔离区域的尺寸减小，可以实现半导体器件的高速操作和精细结构。

5. 发明专利

JP2000260596A PLASMA APPARATUS 失效
公开(公告)号：JP2000260596A
公开(公告)日：2000-09-22
申请号：JP6523199
申请日：1999-03-11
申请人： HITACHI LTD
发明人： HIGUCHI YOSHIYA , KITAZAWA SATOSHI , SEKI HIROBUMI , MORIMOTO YUICHI , NAGAMINE YOSHIHIKO , TAKEMORI SEI , UMEGAKI KIKUO
IPC分类号： H01L21/302 , C23C16/50 , C23C16/511 , H01L21/205 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma apparatus improved in the evenness of plasma density by eliminating the unevenness of the plasma density due to E×B drift. SOLUTION: Magnets 1a to 1d are disposed near incoming windows of microwave guides 9 for generating plasma, The magnets 1a to 1d are disposed, so that vector product E×B of magnetic-flux density vectors B produced by the magnets 1 and electric-field vectors E produced in the plasma, are oriented in the direction toward an object to be processed or in the extraction direction of an ion beam. and plasma is carried in the direction towards the object to be processed or in the extraction direction of the ion beam.

6. 发明专利

JPH1064661A ELECTRON BEAM PROCESSOR 失效
公开(公告)号：JPH1064661A
公开(公告)日：1998-03-06
申请号：JP21707496
申请日：1996-08-19
申请人： HITACHI LTD
发明人： SEKI HIROBUMI , SHIRAKATA HIROFUMI , HORI YASURO , SHIONO SHIGEO , SATO TADASHI
IPC分类号： G21K5/04 , C01B13/10 , H01T23/00
摘要： PROBLEM TO BE SOLVED: To obtain an electron beam processor capable of manufacturing an opening whose conductance becomes minimum under conditions in which a loss of electron beams is minimum by irradiating a bulkhead with focused electron beams. SOLUTION: For an electron beam 5 emitted from an electron beam generation source 1, a scattering angle thereof is restricted by a lens 2, therefore, an electron beam close to a parallel beam can be obtained. After the electron beam 5 transmitting the lens 2 flies in a vacuum chamber 6, it is focused by a lens 3 and collides with a bulkhead 4. The bulkhead 4 is provided to physically isolated the vacuum chamber 6 and a processing gas 8. Since the bulkhead 4 is locally heated, it is gassed by evaporation, spattering, or the like, and a microscopic pore 9 close to the shape of the electron beam opens. After the pore has opened, the electron beam passes through this opening 9 and is introduced into the processing gas 8, therefore, a loss of the electron beam in the bulkhead 4 can be ignored.

7. 发明专利

JPH08167749A ELECTRODE FOR GAS LASER 失效
公开(公告)号：JPH08167749A
公开(公告)日：1996-06-25
申请号：JP31020794
申请日：1994-12-14
申请人： HITACHI LTD
发明人： SEKI HIROBUMI , TAKEMORI SEI
IPC分类号： H01S3/038
摘要： PURPOSE: To prevent discharge from a connecting surface and preserve parallelism of an electrode by connecting the electrode to a current conductor through a conductor of Young's modulus of specific value or less and contacting the electrode with the current conductor closely. CONSTITUTION: A glow discharge is generated between electrodes 1 and 2 and a laser light is generated. The electrode 1 is connected to a current conductor 4 through an elastic conductor 3 of the Young s modulus of 4×10 (N/m) or less. The electrode 1 is astene to the current conductor 4 with screws 5 and 6. Therefore the electrode l, the current conductor 4 and the elastic conductor 3 are touched closely and no glow discharge is generated from the connecting surface. Adjusting tightening torque of the screws 5 and 6, the parallelism between the electrode 1 and 2 is preserved.

8. 发明专利

JPH08111555A GAS LASER EXCITATION CIRCUIT 失效
公开(公告)号：JPH08111555A
公开(公告)日：1996-04-30
申请号：JP24589894
申请日：1994-10-12
申请人： HITACHI LTD
发明人： SEKI HIROBUMI
IPC分类号： H01S3/097 , H01S3/0971
摘要： PURPOSE: To bring the operation of a laser excitation circuit in a highly stable state, and to obtain semipermanent life for a switch by parallely connecting a saturable reactor to one of capacitors of a gas laser excitation circuit. CONSTITUTION: First, a saturable reactor 8 is put, in a nonsaturable state. A capacitor 12 is charged to voltage V0 by a charging power source 7. When a switch 13 is turned ON, the electric charge stored in the capacitor 12 is moved to capacitors 1 and 3. When the voltage applied to the capacitors 1 and 3 approaches the peak and the saturable reactor 8 is saturated, the electric charge stored in the capacitor 3 is inverted, and the voltage, which is almost twice as high as the voltage applied to the capacitors 1 and 3, is applied to a laser discharge tube 2. By using a saturable reactor as a switch, life can be extended and operation can be made stable.

9. 发明专利

JP2003124135A OXYGEN ION IMPLANTING DEVICE 审中-公开
公开(公告)号：JP2003124135A
公开(公告)日：2003-04-25
申请号：JP2001321388
申请日：2001-10-19
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , SEKI TAKAYOSHI , ITO JUNYA , SEKI HIROBUMI
IPC分类号： H01J37/20 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a wafer holding member that has a high oxidation resistance against oxygen ion irradiation, can hold a wafer with a small coefficient of friction, and stably produces little dust for a long time when oxygen ions are implanted. SOLUTION: This wafer holding member is made of a titanium nitride and the wafer contacting surface of the member is reformed by implanting carbon ions. Consequently, an oxygen ion implanting device which little contaminates wafers with deposited particles can be provided.

10. 发明专利

JP2003031177A Ion implantation device 审中-公开
标题翻译：离子植入装置
公开(公告)号：JP2003031177A
公开(公告)日：2003-01-31
申请号：JP2001211527
申请日：2001-07-12
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： TOKIKUCHI KATSUMI , SEKI TAKAYOSHI , ITO JUNYA , SEKI HIROBUMI
IPC分类号： C23C14/48 , H01J27/02 , H01J37/04 , H01J37/08 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide an oxygen ion implantation device with draw out current of 100 mA class, enabled to stably carry out oxygen ion implantation of few mA class for long period without exchanging an ion source main body or a draw out electrode.
SOLUTION: A gas, different from implantation gas, is introduced into a discharging chamber having porous draw-out electrode for microwave ion source, together with the implantation gas, here, total flow volume of the implantation gas and the different das is unchanged, and the ratio is changed.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供具有100mA等级的引出电流的氧离子注入装置，能够长时间稳定地进行几mA级的氧离子注入，而不需要更换离子源主体或拉出电极。解决方案：将不同于注入气体的气体引入具有用于微波离子源的多孔抽出电极的放电室以及注入气体，这里，注入气体的总流量和不同的das不变，以及比例发生变化。

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