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1. 发明授权

US3891866A Highly sensitive gate-controlled pnpn switching circuit 失效
标题翻译：高灵敏度门控pnpn开关电路
公开(公告)号：US3891866A
公开(公告)日：1975-06-24
申请号：US48423874
申请日：1974-06-28
申请人： HITACHI LTD
发明人： OKUHARA SHINZI , KUSANO MASAAKI , KAWANAMI MITSURU
IPC分类号： H02M1/08 , H01L29/74 , H01L29/745 , H03K17/73 , H03K17/732 , H03K17/16
CPC分类号： H03K17/732 , H01L29/742 , H01L29/7455
摘要： A PNPN switch having substantially a fourlayer structure has at least its first, third and fourth layers, which have respectively P,P and N conductivity types, provided respectively with a first, third and fourth electrodes. The source and the drain of a field effect transistor is connected with the third and fourth electrodes, respectively. The third electrode is further connected with one end of a voltage drop element while the other end of the voltage drop element is connected with the gate of the field effect transistor. The gate of the field effect transistor and the other end of the voltage drop element, connected together, serve as a gate trigger terminal of a highly sensitive gate-controlled PNPN switching circuit.
摘要翻译：具有基本四层结构的PNPN开关至少具有分别具有第一，第三和第四电极的第一，第三和第四层，分别具有P，P和N导电类型。场效应晶体管的源极和漏极分别与第三和第四电极连接。第三电极进一步与电压降元件的一端连接，而电压降元件的另一端与场效应晶体管的栅极连接。场效应晶体管的栅极和连接在一起的降压元件的另一端用作高灵敏度栅极控制PNPN开关电路的栅极触发端子。

2. 发明专利

DE4110341A1 未知
公开(公告)号：DE4110341A1
公开(公告)日：1991-10-10
申请号：DE4110341
申请日：1991-03-28
申请人： HITACHI LTD , HITACHI AUTOMOTIVE ENG
发明人： KAMINAGA TOSHIAKI , KATAGISHI KENICHI , YOSHIDA TAKENARI , KUSANO MASAAKI , SHIMIZU JUNICHI , YUZAWA KAZUYA
IPC分类号： F02D35/00 , F02D45/00 , F02P7/073 , G01D5/26 , G01D5/347 , G01D5/36 , G01P3/486
摘要： The present invention relates to a device for optically monitoring or detecting information regarding a moving object by using optical fibers. The object of the invention is to prevent output characteristics from deteriorating with the passage of time. This deterioration is caused by the fact that a resin-made holder of a detecting section is deformed or a position in which the holder is installed shifts particularly because of heat and vibrations. An intermediate member is disposed between the holder and a fixing member. The holder is secured to the intermediate member which is used as a member for absorbing heat and vibrations.

3. 发明专利

DE2433981A1 Semiconductor capacitative microphone element - using poly-crystalline base material has flexible capacitor electrode 未知
公开(公告)号：DE2433981A1
公开(公告)日：1975-02-13
申请号：DE2433981
申请日：1974-07-15
申请人： HITACHI LTD
发明人： KUSANO MASAAKI , OKOHARA SHINZI
IPC分类号： H01L21/762 , H01L27/02 , H01L29/74 , H03K17/00 , H03K17/72 , H04Q3/52 , H03K17/16
摘要： The microphone element consists of two audio sensitive parts mounted on a single base of poly-crystalline material. The junction between the two parts, and the base of the crystalline material form the two electrical external contacts. Pressure waves hitting the surface of the device cause a noticeable difference in the electrostatic capacitance between the plates, and this property is used to convert the audio signal, into an electrical signal. Electrodes for electrical connections are mounted on the flexible diaphragm disc.

4. 发明专利

DE2431535A1 未知
公开(公告)号：DE2431535A1
公开(公告)日：1975-01-23
申请号：DE2431535
申请日：1974-07-01
申请人： HITACHI LTD
发明人： OKUHARA SHINZI , KUSANO MASAAKI , KAWANAMI MITSURU
IPC分类号： H02M1/08 , H01L29/74 , H01L29/745 , H03K17/73 , H03K17/732 , H03K17/72

5. 发明专利

DE4110341C2 未知
公开(公告)号：DE4110341C2
公开(公告)日：1995-11-02
申请号：DE4110341
申请日：1991-03-28
申请人： HITACHI LTD , HITACHI AUTOMOTIVE ENG
发明人： KAMINAGA TOSHIAKI , KATAGISHI KENICHI , YOSHIDA TAKENARI , KUSANO MASAAKI , SHIMIZU JUNICHI , YUZAWA KAZUYA
IPC分类号： F02D35/00 , F02D45/00 , F02P7/073 , G01D5/26 , G01D5/347 , G01D5/36 , G01P3/486 , G01P3/36 , F02D1/18
摘要： The present invention relates to a device for optically monitoring or detecting information regarding a moving object by using optical fibers. The object of the invention is to prevent output characteristics from deteriorating with the passage of time. This deterioration is caused by the fact that a resin-made holder of a detecting section is deformed or a position in which the holder is installed shifts particularly because of heat and vibrations. An intermediate member is disposed between the holder and a fixing member. The holder is secured to the intermediate member which is used as a member for absorbing heat and vibrations.

6. 发明专利

CA1026467A SEMICONDUCTOR SPEECH PATH SWITCH 未知
公开(公告)号：CA1026467A
公开(公告)日：1978-02-14
申请号：CA205355
申请日：1974-07-22
申请人： HITACHI LTD
发明人： KUSANO MASAAKI , OKUHARA SHINZI
IPC分类号： H01L21/762 , H01L27/02 , H01L29/74 , H03K17/00 , H03K17/72 , H04Q3/52

7. 发明专利

DE2451861A1 Integrated circuit module with dielectric insulation - has low resistance zones in substrate of opposite type conductivity with earth electrodes 未知
公开(公告)号：DE2451861A1
公开(公告)日：1975-05-15
申请号：DE2451861
申请日：1974-10-31
申请人： HITACHI LTD
发明人： KUSANO MASAAKI , OHHINATA ICHIRO , OKUHARA SHINZI
IPC分类号： H01L21/762 , H01L23/535 , H01L21/76
摘要： An intgrated semiconductor module is built in a single crystal silicon island and has the elements separated in the substrate by dielectric insulation. At least one part of the substrate has a low electrical resistance and an earth contact is connected to the low resistance zones. These zones are of the opposite type conductivity to that of the single crystal silicon island. This type of module reduces the capacitive coupling between the circuit elements in the high frequency wide band range. It is suitable for use in telecommunication systems in wide band applications eliminating the phenomenon of cross talk in the lines.

8. 发明专利

DE2916130A1 未知
公开(公告)号：DE2916130A1
公开(公告)日：1979-10-25
申请号：DE2916130
申请日：1979-04-20
申请人： HITACHI LTD
发明人： KUSANO MASAAKI
IPC分类号： H01L21/822 , H01L23/538 , H01L27/04 , H04Q3/52 , H04Q1/52
摘要： In a semiconductor speech path at least a crosspoint element for forming a unitary matrix is formed on a semiconductor chip. The interconnections between the crosspoint elements and the matrix wirings are made on a ceramic wiring plate. By mounting a plurality of semiconductor chips on the ceramic wiring plate by face-down bonding, unitary matrix arrays are formed and at the same time the whole of a matrix array is formed. A row wiring having first speech path wirings and first selection wirings and a column wiring having second speech path wirings and second selection path wirings are doubly layered on the semiconductor wiring plate, with the intervention of an insulating layer therebetween. The upper layer, except for a pedestal region, is covered with a ceramic insulating layer. Terminals for row and column wirings are arranged in dual-in-line fashion. The speech path terminals of each of the row and column wirings are symmetrically and oppositely disposed to each other. This is correspondingly applied for the selection path terminals. With such a construction, the need for the multi-layered wiring on the semiconductor chip is eliminated, and the manufacturing of chips is simplified. Also crosstalk among the row and column wiring paths on the ceramic wiring plate is lessened and the grid wiring is facilitated.

9. 发明专利

CA1050647A LIGHT-EMITTING DIODE ELEMENT AND DEVICE 未知
公开(公告)号：CA1050647A
公开(公告)日：1979-03-13
申请号：CA240949
申请日：1975-12-03
申请人： HITACHI LTD
发明人： KUSANO MASAAKI , OKUHARA SHINZI , OHHINATA ICHIRO
IPC分类号： G09F9/33 , H01L23/48 , H01L25/075 , H01L33/30 , H01L33/38 , H01L33/62 , H01L33/00
摘要： LIGHT-EMITTING DIODE ELEMENT AND DEVICE A light-emitting diode element comprising a semiconductor wafer including a pair of a p-type semiconductor region and an n-type semiconductor region forming a pn junction, an inclined first electrode provided on at least one of the peripheral edges of the surface of one of the semiconductor regions in the semiconductor wafer, and a flat second electrode provided on the surface of the other semiconductor region. A light-emitting diode device is provided in which a plurality of such light-emitting diode elements are respectively received in a plurality of openings of a substrate having a first wiring conductor group and a second wiring conductor group electrically connected to the first and second electrodes respectively of the light-emitting diode elements by a low-melting metal. Thus, these light emitting diode elements can be mounted on the single substrate in a high package density, and the light-emitting diode device of simple construction can be easily assembled.

10. 发明专利

CA1017875A REDUCTION OF DIELECTRIC ISOLATION CAPACITANCE COUPLING 未知
公开(公告)号：CA1017875A
公开(公告)日：1977-09-20
申请号：CA212875
申请日：1974-11-01
申请人： HITACHI LTD
发明人： KUSANO MASAAKI , OHHINATA ICHIRO , OKUHARA SHINZI
IPC分类号： H01L21/762 , H01L23/535

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