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1. 发明专利

CA1038068A SEMICONDUCTOR CHANNEL SWITCH 未知
公开(公告)号：CA1038068A
公开(公告)日：1978-09-05
申请号：CA203636
申请日：1974-06-28
申请人： HITACHI LTD
发明人： KAWANAMI MITSURU , OKUHARA SHINZI , MUKAEMACHI TAKUZI
IPC分类号： H03K17/72 , H03K17/735 , H04Q3/52
摘要： SEMICONDUCTOR CHANNEL SWITCH A plurality of PNPN switches, each permitting current flow in either, i.e. positive or negative, direction, are arranged at the cross points between the rows and the columns of the speech paths so as to form a matrix. The gate trigger terminal of each PNPN switch is connected with a gating current circuit having a high impedance, which circuit is adapted to control ON and OFF operations of the switch. A plurality of means are provided to selectively turn the gate current circuits on and off so that gate current is supplied continuously for the gate terminal of any desired PNPN switch at least for the time during which the corresponding cross point of the matrix is to be electrically bridged.

2. 发明授权

US3891866A Highly sensitive gate-controlled pnpn switching circuit 失效
标题翻译：高灵敏度门控pnpn开关电路
公开(公告)号：US3891866A
公开(公告)日：1975-06-24
申请号：US48423874
申请日：1974-06-28
申请人： HITACHI LTD
发明人： OKUHARA SHINZI , KUSANO MASAAKI , KAWANAMI MITSURU
IPC分类号： H02M1/08 , H01L29/74 , H01L29/745 , H03K17/73 , H03K17/732 , H03K17/16
CPC分类号： H03K17/732 , H01L29/742 , H01L29/7455
摘要： A PNPN switch having substantially a fourlayer structure has at least its first, third and fourth layers, which have respectively P,P and N conductivity types, provided respectively with a first, third and fourth electrodes. The source and the drain of a field effect transistor is connected with the third and fourth electrodes, respectively. The third electrode is further connected with one end of a voltage drop element while the other end of the voltage drop element is connected with the gate of the field effect transistor. The gate of the field effect transistor and the other end of the voltage drop element, connected together, serve as a gate trigger terminal of a highly sensitive gate-controlled PNPN switching circuit.
摘要翻译：具有基本四层结构的PNPN开关至少具有分别具有第一，第三和第四电极的第一，第三和第四层，分别具有P，P和N导电类型。场效应晶体管的源极和漏极分别与第三和第四电极连接。第三电极进一步与电压降元件的一端连接，而电压降元件的另一端与场效应晶体管的栅极连接。场效应晶体管的栅极和连接在一起的降压元件的另一端用作高灵敏度栅极控制PNPN开关电路的栅极触发端子。

3. 发明授权

US3564281A High speed logic circuits and method of constructing the same 失效
标题翻译：高速逻辑电路及其构造方法
公开(公告)号：US3564281A
公开(公告)日：1971-02-16
申请号：US3564281D
申请日：1967-12-12
申请人： HITACHI LTD
发明人： TOKUNAGA MITIO , KAWANAMI MITSURU , AIKYO SUSUMU
IPC分类号： H03K5/02 , H03K19/00 , H03K19/013 , H03K19/08 , H03K19/40
CPC分类号： H03K19/001 , H03K5/02 , H03K19/0136 , H03K19/08
摘要： A logic inverter having a transistor emitter follower output circuit and an input circuit including therein a multicollector transistor or two transistors whose bases and emitters are connected in parallel with each other. In the inverter, the two collectors of the multicollector transistor or of the two transistors in the input circuit are connected to the base and the emitter, which is the output terminal, of the emitter follower transistor, respectively. A plurality of such inverters are combined in such a manner that the bases and the output terminals of the emitter follower transistors are connected in multiple to provide a logic circuit.

4. 发明专利

CA1002667A HIGHLY SENSITIVE GATE-CONTROLLED PNPN SWITCHING CIRCUIT 未知
公开(公告)号：CA1002667A
公开(公告)日：1976-12-28
申请号：CA203733
申请日：1974-06-28
申请人： HITACHI LTD
发明人： OKUHARA SHINZI , KUSANO MASAAKI , KAWANAMI MITSURU
IPC分类号： H02M1/08 , H01L29/74 , H01L29/745 , H03K17/73 , H03K17/732

5. 发明专利

DE1537155A1 未知
公开(公告)号：DE1537155A1
公开(公告)日：1970-01-08
申请号：DE1537155
申请日：1967-12-20
申请人： HITACHI LTD
发明人： TOKUNAGA MITION , KAWANAMI MITSURU , AIKYO SUSUMU
IPC分类号： H03K5/02 , H03K19/00 , H03K19/013 , H03K19/08 , H03K19/40
摘要： 1,214,489. Transistor pulse circuits. HITACHI Ltd. 14 Dec., 1967 [23 Dec., 1966; 1 Feb., 1967], No. 56936/67. Heading H3T. Two transistors 7, 8, and a resistor 12 are connected in series across the supply E2 and either a third transistor 13 connected between T8 base and earth has its base connected to T7 base or else T7 has a second collector (20, Fig. 6a, not shown) connected to T8 base. When a positive going input to the base of a further transistor 6 causes the emitter voltage of T8 to fall with the collector voltage of T6, and at the same time causes T7 to conduct, a large current pulse which tends to flow when T7 and T8 are simultaneously conductive and the output voltage V3 is still positive relative to earth, is reduced by conduction of T13 which causes an additional current flow through the collector resistor 11 of T6. This additional current flow causes the voltage at T6 collector and T8 base to fall sufficiently quickly for no substantial current pulse to flow in the changeover period (c, Figs. 4 and 8, not shown). Diodes 9, 14 provide appropriate voltage level shifts, and a resistor (15, Fig. 5b, not shown) may be connected from the junction of the diodes 9, 14 to the supply E2; this holds up the voltage at T8 base until T13 conducts and thereby eliminates a partial drop in the output voltage V3 at the start of changeover (b, Figs. 3, 7, not shown) and gives a sharper switchover characteristic for T7, T8. Two of the double-collector circuits (Fig. 6a, not shown) are combined (Fig. 10, not shown) to constitute a NOR gate. In another embodiment (Fig. 11a, not shown) a multi-emitter transistor and emitter follower are combined with the two-collector transistor circuit (of Fig. 6a) to provide a NAND gate.

6. 发明专利

CA1064107A FOUR-LAYERED SEMICONDUCTOR SWITCH 未知
公开(公告)号：CA1064107A
公开(公告)日：1979-10-09
申请号：CA259391
申请日：1976-08-19
申请人： HITACHI LTD
发明人： KAWANAMI MITSURU , OHHINATA ICHIRO , OKUHARA SHINZI
IPC分类号： H02M1/08 , H03K17/0812 , H03K17/16 , H03K17/73 , H03K17/60
摘要： SEMICONDUCTOR SWITCH A semiconductor switch of a PNPN structure comprises a PNPN switch including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, a level shifting circuit comprising at least one diode, and an impedance element, wherein the impedance element is connected between the collector and emitter of the first transistor, the first transistor has its collector and emitter connected to the P-type gate and N-type cathode respectively, and the second transistor has its emitter and base connected to the P-type anode and N-type gate, respectively, and has its collector connected to the base of the first transistor through the level shifting circuit. In this arrangement, the first transistor is driven by the current flowing through a Pn junction at the end on the side of the anode of the PNPN switch and the level shifting circuit, so that the semiconductor switch has a great dv/dt withstanding power, operates with high sensitivity, has a high breakdown voltage in both directions and facilitates the setting of circuit constants.

7. 发明专利

DE2718696A1 未知
公开(公告)号：DE2718696A1
公开(公告)日：1977-11-03
申请号：DE2718696
申请日：1977-04-27
申请人： HITACHI LTD
发明人： OHHINATA ICHIRO , OKUHARA SHINZI , KAWANAMI MITSURU , TOKUNAGA MICHIO
IPC分类号： H02M1/06 , H02M1/08 , H03K17/60 , H03K17/615 , H03K17/73 , H03K17/72

8. 发明专利

DE2431164A1 Semiconducting switching device used in computers - forms part of matrix circuit and consists of bidirectional PNPN devices 未知
公开(公告)号：DE2431164A1
公开(公告)日：1975-01-23
申请号：DE2431164
申请日：1974-06-28
申请人： HITACHI LTD
发明人： KAWANAMI MITSURU , OKUHARA SHINZI , MUKAEMACHI TAKUZI
IPC分类号： H03K17/72 , H03K17/735 , H04Q3/52 , H03K17/56
摘要： The semiconductor switch which uses bidirectional PNPN devices in matrix circuits in computer memories, consists of lines of the matrix which are linked by thyristors or triacs to permit current flow in both directions. On and off switching is controlled by a gate fed from a high resistance gate supply. The gate supply control unit is separate and may be common to several gates. The control unit may consist of bistable digital circuits. The individual switch units may be switched ON or OFF as required.

9. 发明专利

AU499996B2 PNPN SWITCH 未知
公开(公告)号：AU499996B2
公开(公告)日：1979-05-10
申请号：AU2461477
申请日：1977-04-27
申请人： HITACHI LTD
发明人： OHHINATA ICHIRO , KAWANAMI MITSURU , OKUHARA SHINZI , TOKUNAGA MICHIO
IPC分类号： H02M1/06 , H02M1/08 , H03K17/60 , H03K17/615 , H03K17/73 , H03K17/72 , H01L29/743

10. 发明专利

DE2637356A1 未知
公开(公告)号：DE2637356A1
公开(公告)日：1977-03-10
申请号：DE2637356
申请日：1976-08-19
申请人： HITACHI LTD
发明人： KAWANAMI MITSURU , OHNINATA ICHIRO , OKUHARA SHINZI
IPC分类号： H02M1/08 , H03K17/0812 , H03K17/16 , H03K17/73 , H03K17/72
摘要： A semiconductor switch of a PNPN structure comprises a PNPN switch of an equivalently four-layered structure including a P-type anode, N-type cathode, N-type gate and P-type gate, a first NPN transistor, a second PNP transistor, a level shifting circuit, and an impedance element, wherein the impedance element is connected between the collector and emitter of the first transistor, the first transistor has its collector and emitter connected to the P-type gate and N-type cathode respectively, and the second transistor has its emitter and base connected to the P-type anode and N-type gate, respectively, and has its collector connected to the base of the first transistor through the level shifting circuit. In this arrangement, the first transistor is driven by the current flowing through a PN junction at the end on the side of the anode of the PNPN switch and the level shifting circuit, so that the semiconductor switch has a great dv/dt withstanding power, operates with high sensitivity, has a high breakdown voltage in both directions and facilitates the setting of circuit constants.

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