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1. 发明专利

DE3682415D1 未知
公开(公告)号：DE3682415D1
公开(公告)日：1991-12-19
申请号：DE3682415
申请日：1986-03-24
申请人： HITACHI LTD , HITACHI MICROCOMPUTER SYST
发明人： TAKIGAWA AKIRA , KONDO SHIZUO , KASAHARA MASUMI , HIRASHIMA TOSHINORI , HAIJIMA MIKIO , OGURA SETSUO , TAKADA OSAMU , AKAMATSU YOSHIKI
IPC分类号： H01C7/00 , H01L21/02 , H03M1/76 , H01L21/31 , H03M1/00
摘要： A resistor comprises a plurality of turn parts (a1 ... a8) whose corners (1A, 1B) have an obtuse flexional angle. Such resistors connected in series form a ladder resistor for use in an electron device.

2. 发明专利

AU6852498A Portable communication equipment 未知
公开(公告)号：AU6852498A
公开(公告)日：1999-11-08
申请号：AU6852498
申请日：1998-04-16
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： HIRASHIMA TOSHINORI , ENDO TSUNEO , MORIKAWA MASATOSHI , HIBINO MITSUAKI , YAMADA TOMIO , KIKUCHI SAKAE , MORIYAMA SHINJI
IPC分类号： H01L23/367 , H04B1/036 , H05K1/02 , H05K1/03 , H05K3/40 , H05K3/46 , H01L25/00 , H01L23/12 , H01L23/36 , H04B1/04
摘要： Portable communication equipment provided with an antenna and a power amplifier circuit module for amplifying high-frequency signals emitted from the antenna, wherein the power amplifier circuit module is provided with a wiring board (1) and a semiconductor element (CHT) (2) which is mounted on the wiring board (1) and electrically and mechanically connected to the board (1) through a plurality of bump electrodes (3), characterized in that the substrate (1) has conductors (4 and 5) which are electrically and mechanically connected to part of the bump electrodes (3) and work as heat dissipating paths. The portable communication equipment is further characterized in that the wiring board (1) is constituted in a multilayered wiring board composed of multiple wiring layers and the conductors (4 and 5) used as the above heat dissipating paths are formed through each wiring layer of the multilayered wiring board, thereby further reducing the size of the power amplifier circuit module and, accordingly, the portable communication equipment.

3. 发明专利

DE10003671A1 Semiconductor component, especially a surface mountable semiconductor package, has front and back face electrodes connected to metal parts by precious metal-containing bodies or layers 未知
公开(公告)号：DE10003671A1
公开(公告)日：2000-08-10
申请号：DE10003671
申请日：2000-01-28
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KAJIWARA RYOICHI , KOIZUMI MASAHIRO , MORITA TOSHIAKI , TAKAHASHI KAZUYA , KISHIMOTO MUNEHISA , ISHII SHIGERU , HIRASHIMA TOSHINORI , TAKAHASHI YASUSHI , HATA TOSHIYUKI , SATO HIROSHI , OOKAWA KEIICHI
IPC分类号： H01L21/60 , H01L21/56 , H01L23/485 , H01L23/495 , H01L23/34
摘要： Semiconductor component has front and back face electrodes connected to metal parts by precious metal-containing bodies or layers. An independent claim is also included for production of the above semiconductor component. Preferred Features: The back face electrode may be connected to its associated metal part by a layer of precious metal alloy with a solidus temperature of >=400 [deg] C. The component may comprise a chip having an electrode which is provided with an Al (alloy) film and which is connected by Au bumps to a metal part provided with a plated precious metal film on its connection face, the aluminum film consisting entirely of an Au/Al alloy in the thickness direction over more than 80% of the Au/Al connection region area.

4. 发明专利

HK141093A RESISTOR AND ELECTRON DEVICE EMPLOYING THE SAME 未知
公开(公告)号：HK141093A
公开(公告)日：1993-12-31
申请号：HK141093
申请日：1993-12-23
申请人： HITACHI LTD , HITACHI MICROCOMPUTER SYST
发明人： TAKIGAWA AKIRA , KONDO SHIZUO , KASAHARA MASUMI , HIRASHIMA TOSHINORI , HAIJIMA MIKIO
IPC分类号： H01C7/00 , H01L21/02 , H03M1/76 , H01L21/31 , H03M1/00
摘要： A resistor comprises a plurality of turn parts (a1 ... a8) whose corners (1A, 1B) have an obtuse flexional angle. Such resistors connected in series form a ladder resistor for use in an electron device.

5. 发明专利

JP2001217355A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001217355A
公开(公告)日：2001-08-10
申请号：JP2000075768
申请日：2000-03-17
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： HIRASHIMA TOSHINORI , TAKAHASHI YASUSHI , SONOBE TAKAO , HANADA KENJI
IPC分类号： H01L23/32 , H01L23/498 , H01L25/00 , H05K1/02 , H05K1/11 , H05K3/34
摘要： PROBLEM TO BE SOLVED: To improve the connection strength between an external terminal of a semiconductor device and a wiring board without enlarging the semiconductor device. SOLUTION: A plurality of bump electrodes 1BB1 where the dimension in the direction across a side of an interposer board 1Bi is longer than that in the direction along the side of it are provided around the perimeter of the rear surface of the interposer board 1Bi where a semiconductor chip constituting a semiconductor device 1 of CSP type is mounted.

6. 发明专利

JP2000349125A SEMICONDUCTOR PACKAGE 失效
公开(公告)号：JP2000349125A
公开(公告)日：2000-12-15
申请号：JP16053999
申请日：1999-06-08
申请人： HITACHI LTD
发明人： KAJIWARA RYOICHI , KOIZUMI MASAHIRO , TAKAHASHI KAZUYA , MORITA TOSHIAKI , HIRASHIMA TOSHINORI , TAKAHASHI YASUSHI
IPC分类号： H01L21/60 , H01L21/56 , H01L23/28
摘要： PROBLEM TO BE SOLVED: To improve the strength of an on-chip electrode/electrode lead joint part for raised reliability by treating an Au bump/Al electrode joint part at high temperature so that, across the entire thickness direction, an Al film between an Au bump and Si substrate is converted to Au-Al compound over a specified percentage or above of a joint area. SOLUTION: An Al electrode 2 is formed on a circuit formation surface of a transistor chip 1 while a rear-surface electrode 3 whose top surface is Au is formed on the opposite surface. A chip electrode comprises an Al or Al alloy film, and the joint surface of a metal member comprises a noble metal plated film. The chip electrode and the metal member are jointed metallically with an Au bump in a thermal process, with an Al film in an Au/Al joint surface whose area is 80% or more being an Au Al alloy layer over the entire thickness direction. All Al under the joint part of a transistor package is allowed to be an alloy so that the strength of an Al electrode/Au bump/electrode lead joint part is improved, resulting in a structure under a compression stress, for higher reliability.

7. 发明专利

JP2000269403A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000269403A
公开(公告)日：2000-09-29
申请号：JP6834499
申请日：1999-03-15
申请人： HITACHI LTD
发明人： HIRASHIMA TOSHINORI
IPC分类号： H01L25/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of high density mounting with high adhesion and high durability. SOLUTION: For this semiconductor device, transistor chips 26 and 27, chip capacitors 28 and 29 and chip resistors 30 and 31 are fixed to a wiring board 10, and a wire 33 is bonded on the chips 26-31. Then, a resin sealing body 34 is molded on the wiring board 10 to expose the other end of a wire 33 group, and an electrical wiring 35 is laid on the exposed surface of the wire 33 group of the resin sealing body 34. To the electric wiring 35, an SOP.IC 39 is surface mounted. The SOP.IC 39 is electrically connected to the transistor chips 26 and 27, the chip capacitors 28 and 29 and the chip resistors 30 and 31 with the wire 33 group. Since a controller can be laminated on the resin sealing body, for which the transistor chips, the chip capacitors and the chip resistors are resin sealed, the high density mounting is realized.

8. 发明专利

JPH088365A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH088365A
公开(公告)日：1996-01-12
申请号：JP16299194
申请日：1994-06-21
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： MUTO KUNIHARU , YAMADA TOMIO , NAGAMINE TORU , OKA HIROTAKE , HIRASHIMA TOSHINORI , NISHIKIZAWA ATSUSHI
IPC分类号： H01L23/28 , H01L23/50
摘要： PURPOSE:To dissipate heat, generated from a semiconductor pellet, efficiently to the outside by making heat dissipation holes through the resin sealing body of a package. CONSTITUTION:Two heat dissipation holes 9 are made, respectively, on the opposite sides in the longitudinal direction of a pellet 2 through an interval in the short side direction. A resin sealing body 8 and a tab 3 penetrate each through hole 9. In the resin sealing body 8, a V-groove 10 is made annularly in one surface of the tab 3 while surrounding the heat dissipation hole part 9a of the tab. Consequently, the leak path of water intruding through the border face between the heat dissipation hole parts 9a, 9b of the tab and the resin sealing body is lengthened thus preventing the moisture resistance from lowering. Heat generated from the semiconductor pellet 2 is dissipated efficiently through the heat dissipation hole 9 and the heat dissipation performance of semiconductor device is enhanced. Since the heat dissipation hole 9 can be made simultaneously with formation of the resin sealing body 8, cost increase can be avoided.

9. 发明专利

JPH0521692A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0521692A
公开(公告)日：1993-01-29
申请号：JP32197891
申请日：1991-12-05
申请人： HITACHI LTD
发明人： HIRASHIMA TOSHINORI
IPC分类号： H01L21/60 , H01L23/04 , H01L23/50
摘要： PURPOSE:To obtain a semiconductor device high in heat dissipating efficiency by a method wherein a part of a package is interposed between the outer periphery of a semiconductor chip and the ends of leads, and a conductor layer smaller in thermal conductivity than a package is formed. CONSTITUTION:Inner leads used in common are arranged between an IC chip 51 and the ends of input-output signal inner leads 24-28 and 30-38 connected to wires. The surface of the inner leads concerned is set nearly level with that of the other lead 24 or the like. The inner leads are used in common as conductor layers arranged in radial paths to the semiconductor chip 1, a part of a package, the input-output signal inner lead 24 and the like, whereby the heat dissipating path of a semiconductor device of this design can be lessened in thermal resistance as the device is small in thermal conductivity as compared with a conventional resin package.

10. 发明专利

JPH0521691A SEMICONDUCTOR DEVICE AND ASSEMBLING METHOD THEREOF 失效
公开(公告)号：JPH0521691A
公开(公告)日：1993-01-29
申请号：JP32197791
申请日：1991-12-05
申请人： HITACHI LTD
发明人： HIRASHIMA TOSHINORI
IPC分类号： H01L23/50
摘要： PURPOSE:To enable a common electric path such as a power supply or the like to be lessened in resistance by a method wherein a second lead is arranged in parallel with one of the sides of a semiconductor chip, and the lead is connected to a pad through the intermediary of a wire. CONSTITUTION:In a lead frame 100, grounding inner leads 23, 29, and 39 are connected in one piece as shown by slant lines. All inner leads 25, 27, 31, 33, 35, and 37 used as grounding inner leads can be disused, so that the space where inner leads were is to be open. Inner leads used in common are made to extend along the end of a region where inner leads 30-38 are connected to the pads of an IC chip 51 and apart from it by a prescribed distance, the end of this inner lead is formed into one piece with a GND inner lead 29 on an arrangement first stage side, and the other end of the lead is formed into one piece with a GND inner lead 39 on an arrangement final stage side. The inner lead can be connected to a pad with a wire or the like, they can be connected to each other at the shortest distance.

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