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1. 发明专利

JP2539368B2 失效
公开(公告)号：JP2539368B2
公开(公告)日：1996-10-02
申请号：JP28551985
申请日：1985-12-20
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , YOSHIZAWA MISUZU , ONO JUICHI , KAYANE NAOKI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/40 , H01S3/18 , H01S3/103

2. 发明专利

JPH0680856B2 失效
公开(公告)号：JPH0680856B2
公开(公告)日：1994-10-12
申请号：JP20623784
申请日：1984-10-03
申请人： HITACHI LTD
发明人： SAITO KATSUTOSHI , TSUJI SHINJI , OOISHI AKIO , KAYANE NAOKI
IPC分类号： H01L21/3205 , H01L23/52 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/12 , H01S5/227 , H01S3/18

3. 发明专利

JPH0537081A SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0537081A
公开(公告)日：1993-02-12
申请号：JP1533091
申请日：1991-02-06
申请人： HITACHI LTD
发明人： TSUCHIYA TOMONOBU , AOKI MASAHIRO , SUZUKI MAKOTO , UOMI KAZUHISA , KAYANE NAOKI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01L33/34 , H01L33/36 , H01S5/00
摘要： PURPOSE:To obtain a semiconductor structure where the strain quantity and a thin film of a strain layer are controlled independently by a method wherein a matching layer provided between a substrate and at least two strain layers different in lattice constant has a band gap energy equal to that of the strain layer and makes lattice match with the substrate. CONSTITUTION:Strain layers 1 of a critical film thickness or less and a matching layer 2 which makes lattice match with a substrate are provided alternately to constitute a strain well layer 4'. In this way, the strain layer is divided by the matching layer to increase the strain quantity added in the strain well layer. An alternate way is to make the strain layer of a quarternary crystal, the matching layer of a binary or ternary crystal, or both of a quarternary crystal, resulting in a change in its mixed crystal ratio. Thus, the band gap energy in the strain well layer is made equal to that of the strain layer 1 at the matching layer 2 to change only the strain quantity. This process can provide a semiconductor structure where the stain quantity and the film thickness of a strain layer are controlled independently.

4. 发明专利

JPH0422033B2 失效
公开(公告)号：JPH0422033B2
公开(公告)日：1992-04-15
申请号：JP15813682
申请日：1982-09-13
申请人： HITACHI LTD
发明人： KURODA TAKARO , KAJIMURA TAKASHI , KASHIWADA YASUTOSHI , KAYANE NAOKI , OOCHI HIROBUMI , OOTOSHI SO
IPC分类号： H01S5/00 , H01S5/223

5. 发明专利

JPH04783A SEMICONDUCTOR OPTICAL ELEMENT 失效
公开(公告)号：JPH04783A
公开(公告)日：1992-01-06
申请号：JP15281990
申请日：1990-06-13
申请人： HITACHI LTD
发明人： KAYANE NAOKI , SAKANO SHINJI , OKA SATOHIKO , UOMI KAZUHISA , OTOSHI SO , TSUCHIYA TOMONOBU , OKAI MAKOTO
IPC分类号： H01S5/00 , H01S5/042 , H01S3/18
摘要： PURPOSE:To stably oscillated light of a desired wavelength by differentiating the differentiation gain coefficient for an injected carrier density of a gain active layer oscillated through amplification of a light having a specific wavelength from that for a light amplifying active later. CONSTITUTION:A phase regulating region 102 having an optical waveguide 181 in which a refractive index is reduced upon increasing of injected carrier density and a light amplifying region 103 made of an active optical waveguide 105 having a second active layer structure are provided. When a material having shorter wavelength of the wavelength lambdaP2 of a gain peak than a laser oscillation wavelength lambdaL is used as an active waveguide 141, the wavelength lambdaP2 does not coincide with the wavelength lambdaL in the material having the short wavelength lambdaP2 at a gain peak. Accordingly, a gain gradient becomes smooth, and even if carrier density is increased, an increase in a photon density is suppressed, a reduction in carrier density upon inductive emission depending upon the photon density is suppressed to increase the carrier density. Therefore, a region 101 does not reach a gain to self-oscillation, and a wavelength variable width and particularly Bragg's reflection wavelength can be increased.

6. 发明专利

JPH02170589A SEMICONDUCTOR ELEMENT, WAVELENGTH VARIABLE SEMICONDUCTOR LASER AND SEMICONDUCTOR PHASE MODULATOR 失效
公开(公告)号：JPH02170589A
公开(公告)日：1990-07-02
申请号：JP32361488
申请日：1988-12-23
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , SAKANO SHINJI , OKAI MAKOTO , KAYANE NAOKI
IPC分类号： G02F1/025 , G02F1/015 , H01S5/00 , H01S5/042
摘要： PURPOSE:To make a semiconductor element variable in refractive index by a method wherein an excited carrier density control means capable of regulating the semiconductor element in dielectric constant and refractive index is provided. CONSTITUTION:A contact layer 7 is made to grow, and an n-side electrode 10, a p-side electrode 8, and an excited carrier control electrode 9 are formed and then isolated to be formed into an element. The element can be much varied in oscillation frequency through the quantity of an injection current into the excited carrier control electrode 9. That, is an excited carrier density inside a multi-quantum well layer 3 is made to vary through the injection of a current, a wave function is selected, an refractive index changes to make an outer light waveguide vary in Bragg reflection wavelength, and furthermore the excited carrier density inside the multi-quantum well layer 3 is made to change up to a specified range, whereby an oscillation wavelength can be continuously changed, and the quantity of the wavelength change converted into a refractive index change is large. By this setup, a semiconductor element of this design can be made to vary much in refractive index.

7. 发明专利

JPH02159786A LASER DEVICE AND FREQUENCY MULTIPLEX OPTICAL COMMUNICATION SYSTEM 失效
公开(公告)号：JPH02159786A
公开(公告)日：1990-06-19
申请号：JP31384488
申请日：1988-12-14
申请人： HITACHI LTD
发明人： SAKANO SHINJI , KAYANE NAOKI
IPC分类号： H01S3/08 , H01S3/23 , H01S5/00 , H01S5/10 , H01S5/40 , H04J14/00 , H04J14/02
摘要： PURPOSE:To enable a laser device of this design to oscillate laser rays of narrow spectral line in a wide wavelength band by a method wherein return rays from a first resonator to an optically active region which is optically coupled with the inside of the first resonator and other return rays from reflective regions sandwiching the optically active region in between them to the optically active region are made to resonate. CONSTITUTION:Laser rays emitted from an optically active region 14 of semiconductor laser structure are made to be incident on a beam splitter 18 provided with reflective planes 9-1 and 9-2, a half mirror 11 which discharges a part of the incident light, and end faces 13-1 and 13-2 coated with a non-reflective coating through the intermediary of a lens 12 which collimates a light flux. In this constitution, the reflective planes 9-1 and 9-2 constitute a Fabry-Perot etalon, and the reflective plate 9-1 of the beam splitter 8 and a reflective coating face 15 constitute a resonator of a Fabry-Perot laser. By this setup, a single laser ray of a narrow spectral line can be oscillated in a wide wavelength band.

8. 发明专利

JPH0210786A SEMICONDUCTOR OPTICAL ELEMENT 失效
公开(公告)号：JPH0210786A
公开(公告)日：1990-01-16
申请号：JP15911688
申请日：1988-06-29
申请人： HITACHI LTD
发明人： KAYANE NAOKI , TSUJI SHINJI , UOMI KAZUHISA , OKAI MAKOTO
IPC分类号： H01L33/10 , H01L33/16 , H01L33/30 , H01L33/34 , H01S5/00 , H01S5/12
摘要： PURPOSE:To realize a longitudinal single mode which is stable in wave length by covering the end face to emit the light with amorphous material, and making the thickness enough larger than the wave length of the light in the material, and being near the refractive index of the material to the refraction of a semiconductor. CONSTITUTION:A diffraction grating 2 in which only the central member is shifted for phase is formed on an n-type InP substrate 1, and thereon a light guide layer 3, an active layer 4, a clad layer 5, a cap layer are grown in order by a liquid phase growth method. Hereafter, these grown layers are removed partially by chemical etching, and amorphous Si7 containing hydrogen is attached by CVD. Next, a p side electrode 8 and an n side electrode 9 are deposited and the element is cut off. Hereafter, an SiN film 10 is formed at the end face on the left by sputtering so as to reduce the reflection factor. For the thickness of amorphous Si, it is more than 2mum at least, desirably more than 4mum. Hereby, the low reflection factor end face excellent in reproducibility can be realized without recourse to crystal growth.

9. 发明专利

JPH01187890A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH01187890A
公开(公告)日：1989-07-27
申请号：JP1063388
申请日：1988-01-22
申请人： HITACHI LTD
发明人： OKAI MAKOTO , KAYANE NAOKI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/16 , H01S5/20
摘要： PURPOSE:To facilitate the reduction of the end surface reflectance of a semiconductor laser securely without giving a harmful influence upon the element characteristics of the semiconductor laser by providing a region into which ions are implanted so as to reach an active layer near the one end surface or both the end surfaces. CONSTITUTION:A diffraction lattice 2 is formed on the surface of an n-type InP substrate 1 by an interference exposure method. A phase shift part 3 is provided in the diffraction lattice 2. An n-type InGaAsP light guide layer 4, an undoped InGaAsP active layer 5, a p-type InGaAsP anti-meltback layer 6 and a p-type InP cladding layer 7 is successively built up on the substrate 1. Ions such as protons are implanted so as to reach the region below the active layer 5 with a gold pattern as a mask to form a region 8. After that, an n-type electrode 9 and a p-type electrode 10 are formed. By the ion implantation, recombination cores are produced in the active layer and the loss in the active layer is increased and the reflection at the end surface can be reduced. After a cleaving, a non-reflective coating film 11 is applied to the end surface into which ions are not implanted. If the reflectance is suppressed not to exceed 5% by this coating, a vertical single mode oscillation can be realized with a good reproducibility.

10. 发明专利

JPH01140788A FORMATION OF PATTERN 失效
公开(公告)号：JPH01140788A
公开(公告)日：1989-06-01
申请号：JP29755287
申请日：1987-11-27
申请人： HITACHI LTD
发明人： OKAI MAKOTO , KAYANE NAOKI
IPC分类号： G02B5/18 , G03F7/20 , H01L21/027 , H01L21/268 , H01S5/00 , H01S5/12 , H01S5/34
摘要： PURPOSE:To selectively disorder a region of submicron order of a superlattice structure by irradiating interference fringes due to a laser light to the structure. CONSTITUTION:When a superlattice structure is irradiated with a high output light, it is disordered by melting with heat, recrystallization. In order to selectively cause the disorder in a range of submicron order, the interference of a light is utilized. That is, bright and dark pattern generated by the interference of the light is so disordered in the superlattice structure to a diffraction grating pattern state of submicron order of periphery by irradiating the structure with it. Thus, the region of the submicron order of the structure can be selectively disordered, thereby easily forming a desired fine pattern.

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