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1. 发明专利

JPH09134698A ION BEAM MACHINING DEVICE 失效
公开(公告)号：JPH09134698A
公开(公告)日：1997-05-20
申请号：JP29010695
申请日：1995-11-08
申请人： HITACHI LTD
发明人： FUJISHIRO MASAHARU , OISHI SEITARO , ONUKI HISAO
IPC分类号： H01J37/30 , H01L21/302
摘要： PROBLEM TO BE SOLVED: To previously prevent machining failure by detecting abnormality of neutralization. SOLUTION: A normal range of a neutralizing electric current is prestored in a memory 103. A control device 102 actuates a power source 19, and flows the neutralizing electric current to a filament 18. At this time, a sensor 21 detects a value of the neutralizing electric current flowing in the filament 18, and output it to the control device 102. A processor 104 of the control device 102 obtains a normal range of the neutralizing electric current from the memory 103. Whether or not an output value from the sensor 21 falls within this normal range is judged. When it is outside of the range, pullout of an ion beam (b) is stopped. Therefore, machining failure caused by neutralizing failure can be previously prevented.

2. 发明专利

JPH07278811A ION BEAM MIXING DEVICE AND PRODUCTION OF AL COATING RUBBER USING THIS DEVICE 失效
公开(公告)号：JPH07278811A
公开(公告)日：1995-10-24
申请号：JP7684794
申请日：1994-04-15
申请人： HITACHI LTD
发明人： FUJISHIRO MASAHARU , KAMIIDE YASUO , ISOBE SHOJI , TAKANO ICHIRO
IPC分类号： C23C14/20 , C23C14/48
摘要： PURPOSE:To adhere metal to a polymer material without decreasing characteristics (softness or processability) of the polymer material so that the polymer material can be industrially used for various purposes. CONSTITUTION:Aluminum 1 deposited on a natural rubber 14 attached to a substrate holder 13, while the substrate is irradiated with ion beams 6 of inert gas (such as Ar and He). This method is called as assist vapor deposition, and by this assist vapor deposition, Al atoms do be implanted in the rubber base material and bonded with rubber atoms to form a mixing layer 5. Then the irradiation of ion beams of inert gas is stopped and only Al 1 is vapor- deposited to coat the mixing layer 5.

3. 发明专利

JP2002373884A Method for manufacturing plasma processor for producing semiconductor 有权
标题翻译：制造用于生产半导体的等离子体处理器的方法
公开(公告)号：JP2002373884A
公开(公告)日：2002-12-26
申请号：JP2001179463
申请日：2001-06-14
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： NAWATA MAKOTO , FUJISHIRO MASAHARU , YAMANE TOMOYUKI
IPC分类号： B01J19/08 , C23C14/00 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent a plasma processor from causing Na contamination of a substrate at the time of plasma processing.
SOLUTION: In the method for manufacturing a plasma processor being employed in the production of a semiconductor, components subjected to machining or surface treatment and being exposed to the plasma of the plasma processor are cleaned with hot pure water before being incorporated in an apparatus.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了防止等离子体处理器在等离子体处理时引起基板的Na污染。解决方案：在制造用于制造半导体的等离子体处理器的方法中，经加工或表面处理并暴露于等离子体处理器的等离子体的部件在加入设备之前用热纯水清洗。

4. 发明专利

JPH0941165A ION BEAM MILLING DEVICE 失效
公开(公告)号：JPH0941165A
公开(公告)日：1997-02-10
申请号：JP19069995
申请日：1995-07-26
申请人： HITACHI LTD
发明人： FUJISHIRO MASAHARU , OISHI SEITARO , ISHIZAKI HIROSHI , TOGAWA EISEI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To perform etching accurately by a target etching amount in the device using a gaseous reactant as a gas to be formed into a plasma. SOLUTION: In this device, when a gaseous reactant is formed into a plasma, a carbide is produced and deposited on a decelerating electrode 11 and, accordingly, the decelerated current value is increased to change the etching rate. At this time, the decelerated current value Idec , is measured with a decelerated current measuring device 14 and, based on this measured decelerated current value Idec , the actual etching amount Etb at a reduced etching rate due to the increase in decelerated current is estimated by an etching amount estimation section 34. The deviation Etc of the actual etching amount Etb from a target etching amount E is determined by a deviation calculation section 35 and the milling time Tm1 is newly determined by a milling time calculation section 36 so that the deviation Etc becomes substantially zero and the determined milling time Tm1 is instructed to respective power source circuits by a controlled variable instruction section 32.

5. 发明专利

JPH06170560A LASER BEAM MACHINE 失效
公开(公告)号：JPH06170560A
公开(公告)日：1994-06-21
申请号：JP31970892
申请日：1992-11-30
申请人： HITACHI LTD
发明人： FUJISHIRO MASAHARU , FUJIMOTO MINORU , SUZUKI MINORU , KUWABARA KOJI
IPC分类号： B23K26/00 , B23K26/066 , G02F1/13 , B23K26/06
摘要： PURPOSE:To improve the transfer efficiency without manufacturing deffective products by immediately stopping the emission of the laser beam when the pattern information transfer is deviated. CONSTITUTION:The desired pattern information is displayed on a liquid crystal mask 15 from an operation control part 2 of a laser beam marking equipment. The laser beam 11A from a laser beam oscillator 10 passes through the plane of polarization of the liquid crystal mask 15 and transfers the desired pattern information on a work 13. When a sensor 26 to detect the position of the work 13 on a conveyor 25 senses the deviation, a motor 23 of the conveyor 25 is controlled by the judgement of a carriage control part 24. At the same time, the signal to detect the deviation opens a laser beam power source switch 20, and opens the control switch of an AND circuit 10C. This constitution prevents the transfer of the work 13 from being produced without correcting the positional deviation.

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