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1. 发明授权

EP0209109B1 Method of and apparatus for forming film by utilizing low-temperature plasma 失效
标题翻译：利用低温等离子体形成薄膜的方法与装置
公开(公告)号：EP0209109B1
公开(公告)日：1992-03-25
申请号：EP86109658.4
申请日：1986-07-14
申请人： HITACHI, LTD. , HITACHI ENGINEERING AND SERVICES CO., LTD.
发明人： Sonobe, Tadasi , Suzuki, Noboru , Chiba, Kiyosi , Suzuki, Kazuo , Nakatani, Mitsuo , Watanabe, Takeshi , Ishigaki, Yukio
IPC分类号： C23C16/50
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32697 , H01J2237/3327

2. 发明公开

EP0209109A2 Method of and apparatus for forming film by utilizing low-temperature plasma 失效
标题翻译： Verfahren und Vorrichtung zur Schichtbildung mittels eines Tieftemperaturplasmas。
公开(公告)号：EP0209109A2
公开(公告)日：1987-01-21
申请号：EP86109658.4
申请日：1986-07-14
申请人： HITACHI, LTD. , HITACHI ENGINEERING AND SERVICES CO., LTD.
发明人： Sonobe, Tadasi , Suzuki, Noboru , Chiba, Kiyosi , Suzuki, Kazuo , Nakatani, Mitsuo , Watanabe, Takeshi , Ishigaki, Yukio
IPC分类号： C23C16/50
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32697 , H01J2237/3327
摘要： A film formation apparatus including a plasma formation chamber (3) for generating low-temperature plasma (6) and a specimen chamber (7) communicating with the plasma formation chamber, for forming a thin film (14) by utilizing the low-temperature plasma in such a manner that a film material gas (8) introduced into the specimen chamber is activated by the low-temperature plasma which is extracted from the plasma formation chamber into the specimen chamber, and the thin film (14) is formed of the activated gas at the surface of a specimen (10) placed on a specimen table (9) which is disposed in the specimen chamber, is disclosed. The above apparatus further includes a grid electrode (15) disposed between a plasma extracting aperture (7a) for extracting the low-temperature plasma from the plasma formation chamber into the specimen chamber and the specimen table, and control means (16) for controlling the potential of the grid electrode, to scrape a protrusion (14b) on the thin film (14) by accelerated ions, thereby forming a dense, uniform film having a flat surface all over the surface of the specimen.
摘要翻译：一种成膜装置，包括用于产生低温等离子体的等离子体形成室（3）和与等离子体形成室连通的样品室（7），用于通过利用低温等离子体形成薄膜（14）导入到试样室中的薄膜材料气体（8）由从等离子体形成室抽入试样室的低温等离子体活化，薄膜（14）由活化的公开了放置在设置在试样室中的试样台（9）上的试样（10）的表面的气体。上述装置还包括设置在等离子体提取孔（7a）之间的栅电极（15），用于将等离子体形成室中的低温等离子体提取到试样室中，以及控制装置（16）栅电极的电位，通过加速离子刮擦薄膜（14）上的突起（14b），从而在样品的整个表面上形成具有平坦表面的致密均匀的膜。

3. 发明公开

EP0275965A3 Plasma operation apparatus 失效
标题翻译：等离子体操作装置
公开(公告)号：EP0275965A3
公开(公告)日：1990-04-25
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

4. 发明授权

EP0275965B1 Plasma operation apparatus 失效
标题翻译：随着等离子工作机器。
公开(公告)号：EP0275965B1
公开(公告)日：1995-05-31
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678

5. 发明授权

EP0290036B1 Plasma treatment apparatus 失效
标题翻译：等离子处理设备
公开(公告)号：EP0290036B1
公开(公告)日：1995-04-12
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678

6. 发明公开

EP0290036A2 Plasma treatment apparatus 失效
标题翻译： Plasmabehandlungsvorrichtung。
公开(公告)号：EP0290036A2
公开(公告)日：1988-11-09
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.
摘要翻译：公开了一种能够在基板（5,211,312）上沉积所需物质以形成薄膜的等离子体处理装置。特别地，对于使用微波的等离子体处理装置，公开了可以提高成膜速度和膜质量并且可以使装置的尺寸小的装置的结构。

7. 发明公开

EP0275965A2 Plasma operation apparatus 失效
标题翻译： Mite einem等离子体
公开(公告)号：EP0275965A2
公开(公告)日：1988-07-27
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.
摘要翻译：公开了一种等离子体操作装置，其利用与微波协同产生的等离子体产生的磁场，以便对例如半导体衬底的试样（7,101,201）进行表面操作，例如薄膜沉积，蚀刻，溅射和等离子体氧化。该装置特别利用电子回旋共振，适用于执行高效和高质量的等离子体操作。

8. 发明公开

EP0290036A3 Plasma treatment apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：EP0290036A3
公开(公告)日：1989-11-15
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.

9. 发明公开

EP0209109A3 Method of and apparatus for forming film by utilizing low-temperature plasma 失效
标题翻译：利用低温等离子体形成薄膜的方法与装置
公开(公告)号：EP0209109A3
公开(公告)日：1987-08-26
申请号：EP86109658
申请日：1986-07-14
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Sonobe, Tadasi , Suzuki, Noboru , Chiba, Kiyosi , Suzuki, Kazuo , Nakatani, Mitsuo , Watanabe, Takeshi , Ishigaki, Yukio
IPC分类号： C23C16/50
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32697 , H01J2237/3327
摘要： A film formation apparatus including a plasma formation chamber (3) for generating low-temperature plasma (6) and a specimen chamber (7) communicating with the plasma formation chamber, for forming a thin film (14) by utilizing the low-temperature plasma in such a manner that a film material gas (8) introduced into the specimen chamber is activated by the low-temperature plasma which is extracted from the plasma formation chamber into the specimen chamber, and the thin film (14) is formed of the activated gas at the surface of a specimen (10) placed on a specimen table (9) which is disposed in the specimen chamber, is disclosed. The above apparatus further includes a grid electrode (15) disposed between a plasma extracting aperture (7a) for extracting the low-temperature plasma from the plasma formation chamber into the specimen chamber and the specimen table, and control means (16) for controlling the potential of the grid electrode, to scrape a protrusion (14b) on the thin film (14) by accelerated ions, thereby forming a dense, uniform film having a flat surface all over the surface of the specimen.

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