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1. 发明公开

EP0275965A3 Plasma operation apparatus 失效
标题翻译：等离子体操作装置
公开(公告)号：EP0275965A3
公开(公告)日：1990-04-25
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

2. 发明公开

EP0290036A3 Plasma treatment apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：EP0290036A3
公开(公告)日：1989-11-15
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.

3. 发明公开

EP0209109A3 Method of and apparatus for forming film by utilizing low-temperature plasma 失效
标题翻译：利用低温等离子体形成薄膜的方法与装置
公开(公告)号：EP0209109A3
公开(公告)日：1987-08-26
申请号：EP86109658
申请日：1986-07-14
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Sonobe, Tadasi , Suzuki, Noboru , Chiba, Kiyosi , Suzuki, Kazuo , Nakatani, Mitsuo , Watanabe, Takeshi , Ishigaki, Yukio
IPC分类号： C23C16/50
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32697 , H01J2237/3327
摘要： A film formation apparatus including a plasma formation chamber (3) for generating low-temperature plasma (6) and a specimen chamber (7) communicating with the plasma formation chamber, for forming a thin film (14) by utilizing the low-temperature plasma in such a manner that a film material gas (8) introduced into the specimen chamber is activated by the low-temperature plasma which is extracted from the plasma formation chamber into the specimen chamber, and the thin film (14) is formed of the activated gas at the surface of a specimen (10) placed on a specimen table (9) which is disposed in the specimen chamber, is disclosed. The above apparatus further includes a grid electrode (15) disposed between a plasma extracting aperture (7a) for extracting the low-temperature plasma from the plasma formation chamber into the specimen chamber and the specimen table, and control means (16) for controlling the potential of the grid electrode, to scrape a protrusion (14b) on the thin film (14) by accelerated ions, thereby forming a dense, uniform film having a flat surface all over the surface of the specimen.

4. 发明授权

EP0275965B1 Plasma operation apparatus 失效
标题翻译：随着等离子工作机器。
公开(公告)号：EP0275965B1
公开(公告)日：1995-05-31
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678

5. 发明授权

EP0290036B1 Plasma treatment apparatus 失效
标题翻译：等离子处理设备
公开(公告)号：EP0290036B1
公开(公告)日：1995-04-12
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678

6. 发明公开

EP0290036A2 Plasma treatment apparatus 失效
标题翻译： Plasmabehandlungsvorrichtung。
公开(公告)号：EP0290036A2
公开(公告)日：1988-11-09
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.
摘要翻译：公开了一种能够在基板（5,211,312）上沉积所需物质以形成薄膜的等离子体处理装置。特别地，对于使用微波的等离子体处理装置，公开了可以提高成膜速度和膜质量并且可以使装置的尺寸小的装置的结构。

7. 发明公开

EP0275965A2 Plasma operation apparatus 失效
标题翻译： Mite einem等离子体
公开(公告)号：EP0275965A2
公开(公告)日：1988-07-27
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.
摘要翻译：公开了一种等离子体操作装置，其利用与微波协同产生的等离子体产生的磁场，以便对例如半导体衬底的试样（7,101,201）进行表面操作，例如薄膜沉积，蚀刻，溅射和等离子体氧化。该装置特别利用电子回旋共振，适用于执行高效和高质量的等离子体操作。

8. 发明公开

EP0282988A3 Synchrotron radiation source 失效
标题翻译：同步辐射源
公开(公告)号：EP0282988A3
公开(公告)日：1990-01-17
申请号：EP88104169.3
申请日：1988-03-16
申请人： HITACHI, LTD. , NIPPON TELEGRAPH AND TELEPHONE CORPORATION , HITACHI ENGINEERING AND SERVICES CO., LTD.
发明人： Ikeguchi, Takashi , Matsumoto, Manabu , Ueda, Shinjiroo , Sonobe, Tadasi , Murashita, Toru , Ido, Satoshi , Kuroishi, Kazuo , Shibayama, Akinori
IPC分类号： H05H13/04 , H05H7/00 , H05H7/06
CPC分类号： H05H7/00
摘要： An industrial, compact synchrotron radiation source comprises SR-light absorbers (31, 33) made of a material having a low gas desorption. The absorbers are positioned inside a bending section/vacuum chamber (1). At least the positions marked A and the surface of the electrically conductive beam stabilizers (61) are to be provided with the absorber.

9. 发明公开

EP0209109A2 Method of and apparatus for forming film by utilizing low-temperature plasma 失效
标题翻译： Verfahren und Vorrichtung zur Schichtbildung mittels eines Tieftemperaturplasmas。
公开(公告)号：EP0209109A2
公开(公告)日：1987-01-21
申请号：EP86109658.4
申请日：1986-07-14
申请人： HITACHI, LTD. , HITACHI ENGINEERING AND SERVICES CO., LTD.
发明人： Sonobe, Tadasi , Suzuki, Noboru , Chiba, Kiyosi , Suzuki, Kazuo , Nakatani, Mitsuo , Watanabe, Takeshi , Ishigaki, Yukio
IPC分类号： C23C16/50
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32697 , H01J2237/3327
摘要： A film formation apparatus including a plasma formation chamber (3) for generating low-temperature plasma (6) and a specimen chamber (7) communicating with the plasma formation chamber, for forming a thin film (14) by utilizing the low-temperature plasma in such a manner that a film material gas (8) introduced into the specimen chamber is activated by the low-temperature plasma which is extracted from the plasma formation chamber into the specimen chamber, and the thin film (14) is formed of the activated gas at the surface of a specimen (10) placed on a specimen table (9) which is disposed in the specimen chamber, is disclosed. The above apparatus further includes a grid electrode (15) disposed between a plasma extracting aperture (7a) for extracting the low-temperature plasma from the plasma formation chamber into the specimen chamber and the specimen table, and control means (16) for controlling the potential of the grid electrode, to scrape a protrusion (14b) on the thin film (14) by accelerated ions, thereby forming a dense, uniform film having a flat surface all over the surface of the specimen.
摘要翻译：一种成膜装置，包括用于产生低温等离子体的等离子体形成室（3）和与等离子体形成室连通的样品室（7），用于通过利用低温等离子体形成薄膜（14）导入到试样室中的薄膜材料气体（8）由从等离子体形成室抽入试样室的低温等离子体活化，薄膜（14）由活化的公开了放置在设置在试样室中的试样台（9）上的试样（10）的表面的气体。上述装置还包括设置在等离子体提取孔（7a）之间的栅电极（15），用于将等离子体形成室中的低温等离子体提取到试样室中，以及控制装置（16）栅电极的电位，通过加速离子刮擦薄膜（14）上的突起（14b），从而在样品的整个表面上形成具有平坦表面的致密均匀的膜。

10. 发明公开

EP0579133A1 Superconducting magnet abnormality detection and protection apparatus 失效
标题翻译：用于检测异常和用于保护超导磁体的装置。
公开(公告)号：EP0579133A1
公开(公告)日：1994-01-19
申请号：EP93111023.3
申请日：1993-07-09
申请人： HITACHI, LTD.
发明人： Saitoh, Toshio , Takizawa, Teruhiro , Maki, Naoki , Kobayashi, Takashi , Shibata, Masayuki , Yoshioka, Ken , Sonobe, Tadasi , Suzuki, Fumio
IPC分类号： H02H7/00 , B60L13/04
CPC分类号： H02H7/001 , B60L13/04 , B60L2200/26
摘要： A superconducting magnet abnormality detection and protection apparatus is for early and surely detecting abnormality in superconducting coils (2) mounted on a vehicle (80) and protecting the superconducting coils. Magnetic flux detecting devices (CA1-CA4) are mounted inside an outer vessel (3), which is a vacuum container of a superconducting magnet (1), so as to be opposite to the superconducting coil (2). Voltages induced in the magnetic flux detecting devices are detected. Voltage signals are led to a decision device (10). By monitoring the change of the voltage signals with time in a comparing judgment device (12), it is determined whether there is an abnormality. If there is an abnormality, an alarm indicator (15) informs of an abnormal state, and a protection device (16) takes protection measures such as interruption of the current of the superconducting magnet. Owing to such configuration, heat does not penetrate from the outside into the superconducting coil via instrumentation lead wires of the magnetic flux detecting devices. Magnitudes of vibration and displacement of the superconducting coil (2) can be detected without contacting the superconducting coil. By always monitoring these signals, it becomes possible to early detect an abnormality in the superconducting coil and protect it.
摘要翻译：一种超导磁体的异常检测和保护装置是用于（2）安装在车辆（80）和保护超导线圈及早确实地检测异常超导线圈。磁通量检测装置（CA1-CA4）被安装在外容器内部（3）所有这是一个超导磁体（1）的真空容器中，以便可相对的超导线圈（2）。在磁通量检测装置的感应电压进行检测。电压信号导致决定装置（10）。通过在比较判断装置（12），监视的电压信号的随时间的变化，它是确定的开采是否存在异常。如果存在异常，在报警指示器（15）通知异常状态的，和一个保护装置（16）采取保护措施：例如超导磁体的电流的中断。由于搜索配置，热量不会从外部穿透到经由所述磁通量检测装置的仪器导线的超导线圈。可以在不接触的超导线圈被检测到的振动和超导线圈（2）的位移的大小。通过始终监视信号合成，就能够检测在超导线圈上的异常早期和保护它。

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