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1. 发明公开

EP0290036A3 Plasma treatment apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：EP0290036A3
公开(公告)日：1989-11-15
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.

2. 发明授权

EP0275965B1 Plasma operation apparatus 失效
标题翻译：随着等离子工作机器。
公开(公告)号：EP0275965B1
公开(公告)日：1995-05-31
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678

3. 发明授权

EP0290036B1 Plasma treatment apparatus 失效
标题翻译：等离子处理设备
公开(公告)号：EP0290036B1
公开(公告)日：1995-04-12
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678

4. 发明公开

EP0290036A2 Plasma treatment apparatus 失效
标题翻译： Plasmabehandlungsvorrichtung。
公开(公告)号：EP0290036A2
公开(公告)日：1988-11-09
申请号：EP88107319.1
申请日：1988-05-06
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Fukuda, Takuya , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyoshi , Suzuki, Kazuo
IPC分类号： H05H1/46 , H01J37/32
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： A plasma treatment apparatus capable of depositing a desired substance on a substrate (5, 211, 312) to form a thin film is disclosed. Especially, for a plasma treatment apparatus using microwaves, a structure of the apparatus is disclosed with which the film deposition rate and the film quality can be improved and the size of the apparatus can be made small.
摘要翻译：公开了一种能够在基板（5,211,312）上沉积所需物质以形成薄膜的等离子体处理装置。特别地，对于使用微波的等离子体处理装置，公开了可以提高成膜速度和膜质量并且可以使装置的尺寸小的装置的结构。

5. 发明公开

EP0275965A2 Plasma operation apparatus 失效
标题翻译： Mite einem等离子体
公开(公告)号：EP0275965A2
公开(公告)日：1988-07-27
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.
摘要翻译：公开了一种等离子体操作装置，其利用与微波协同产生的等离子体产生的磁场，以便对例如半导体衬底的试样（7,101,201）进行表面操作，例如薄膜沉积，蚀刻，溅射和等离子体氧化。该装置特别利用电子回旋共振，适用于执行高效和高质量的等离子体操作。

6. 发明公开

EP0275965A3 Plasma operation apparatus 失效
标题翻译：等离子体操作装置
公开(公告)号：EP0275965A3
公开(公告)日：1990-04-25
申请号：EP88100672.0
申请日：1988-01-19
申请人： HITACHI, LTD. , HITACHI SERVICE ENGINEERING CO., LTD.
发明人： Fukuda, Takuya , Mochizuki, Yasuhiro , Momma, Naohiro , Takahashi, Shigeru , Suzuki, Noboru , Sonobe, Tadasi , Chiba, Kiyosi , Suzuki, Kazuo
IPC分类号： H01J37/32 , C23C16/50 , C23F4/00
CPC分类号： H01J37/32192 , C23C16/511 , H01J37/32678
摘要： There is disclosed a plasma operation apparatus which utilizes plasma generated by a microwave cooperative with a magnetic field so as to perform surface operation of a specimen (7, 101, 201) such as semiconductor substrates, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

7. 发明公开

EP0767500A2 Power semiconductor device with lattice defects 失效
标题翻译：与晶格缺陷的半导体功率器件
公开(公告)号：EP0767500A2
公开(公告)日：1997-04-09
申请号：EP96115659.3
申请日：1996-09-30
申请人： HITACHI, LTD.
发明人： Ishikawa, Katsumi , Saito, Katsuaki , Sato, Yutaka , Watanabe, Atsuo , Katoh, Shuji , Momma, Naohiro
IPC分类号： H01L29/74 , H01L29/32
CPC分类号： H01L29/74 , H01L29/32 , H01L29/861 , Y10S257/913
摘要： In a semiconductor device such as a diode and thyristor having at least one pn junction between a pair of main surfaces, a first main electrode (31, 33) formed on the surface of one of the main surfaces and a second main electrode (32, 34) formed on the surface of the other one of the main surfaces, a semiconductor lattice defect is formed such that its lattice defect density increases gradually in the direction from the first main electrode (31, 33) to the second main electrode (32, 34). Since the distribution of carrier density in conduction state can be flattened according to the invention, the reverse recovery charge can be reduced substantially without causing ON-state voltage to increase.

8. 发明授权

EP0252206B1 Method of fabricating semiconductor structure 失效
标题翻译：制造半导体结构的方法
公开(公告)号：EP0252206B1
公开(公告)日：1992-07-15
申请号：EP87101113.6
申请日：1987-01-27
申请人： HITACHI, LTD.
发明人： Homma, Hideo , Misawa, Yutaka , Momma, Naohiro
IPC分类号： H01L21/82 , H01L21/285 , H01L21/00
CPC分类号： H01L29/66272 , H01L21/0337 , H01L21/32137 , H01L21/8249 , H01L29/41783 , H01L29/66545 , H01L29/6659 , H01L29/78

9. 发明公开

EP0252206A2 Method of fabricating semiconductor structure 失效
标题翻译： Verfahren zum Herstellen einer Halbleiterstruktur。
公开(公告)号：EP0252206A2
公开(公告)日：1988-01-13
申请号：EP87101113.6
申请日：1987-01-27
申请人： HITACHI, LTD.
发明人： Homma, Hideo , Misawa, Yutaka , Momma, Naohiro
IPC分类号： H01L21/82 , H01L21/285 , H01L21/00
CPC分类号： H01L29/66272 , H01L21/0337 , H01L21/32137 , H01L21/8249 , H01L29/41783 , H01L29/66545 , H01L29/6659 , H01L29/78
摘要： A method of fabricating a semiconductor device includes the steps of: forming at least one first semiconductor region (51) of a first conductivity type and at least one second semiconductor region (50) of a second conductivity type in a main surface of a semiconductor layer of the first conductivity type; forming a three-layer film having a desired shape on each of the first and second semiconductor regions, the three-layer film being made up of a bottom layer which is a conductive film (56), an intermediate layer which is a silicon nitride film (57), and a top layer which is a polycrystalline silicon film (58) doped with one of arsenic and phosphorus; forming a first insulating layer (61) on the side wall of the three-layer film; forming a second polycrystalline silicon film (62) on the whole surface, and diffusing one of arsenic and phosphorus from the first polycrystalline silicon film (58) into the second polycrystalline silicon film (62); selectively etching off the first polycrystalline silicon film (58) and that portion (62A) of the second polycrystalline silicon film, in which one of arsenic and phosphorus has been diffused; forming a second insulating layer (64) at least on the surface of that portion (63A) of the second polycrystalline silicon film which exists on the second semiconductor region (50); removing the silicon nitride film (57) and the conductive film (56) which exist on the second semiconductor region (50), while using the second insulating layer (64) as a mask, to form an aperture and forming a third polycrystalline silicon film (69) so that the aperture (68) is covered by the third polycrystalline silicon film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体层的主表面中形成至少一个第一导电类型的第一半导体区域（51）和第二导电类型的至少一个第二半导体区域（50）的第一导电类型; 在第一和第二半导体区域中的每一个上形成具有期望形状的三层膜，三层膜由作为导电膜（56）的底层构成，作为氮化硅膜的中间层（57），以及掺杂有砷和磷之一的多晶硅膜（58）的顶层; 在所述三层膜的侧壁上形成第一绝缘层（61）; 在整个表面上形成第二多晶硅膜（62），并将砷和磷中的一种从第一多晶硅膜（58）扩散到第二多晶硅膜（62）中; 选择性地蚀刻出第一多晶硅膜（58）和砷和磷之一已被扩散的第二多晶硅膜的部分（62A）; 至少在所述第二半导体区域（50）上存在的所述第二多晶硅膜的所述部分（63A）的表面上形成第二绝缘层（64）; 在使用第二绝缘层（64）作为掩模的同时，移除存在于第二半导体区域（50）上的氮化硅膜（57）和导电膜（56），以形成孔并形成第三多晶硅膜（69），使得孔（68）被第三多晶硅膜覆盖。

10. 发明授权

EP0222215B1 Polysilicon MOS transistor and method of manufacturing the same 失效
标题翻译：多晶硅MOS晶体管及其制造方法
公开(公告)号：EP0222215B1
公开(公告)日：1991-10-16
申请号：EP86114610.8
申请日：1986-10-22
申请人： HITACHI, LTD.
发明人： Saito, Ryuichi , Momma, Naohiro
IPC分类号： H01L29/78 , H01L21/31
CPC分类号： H01L29/66757 , H01L21/32155 , H01L27/0922 , H01L27/11 , H01L27/1104 , H01L27/1108 , H01L29/04 , H01L29/167 , H01L29/78618 , H01L29/78675 , H01L29/78684

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