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1. 发明授权

EP0687897B1 Method for making specimen 失效
标题翻译：样品制备方法
公开(公告)号：EP0687897B1
公开(公告)日：2003-09-10
申请号：EP95109035.6
申请日：1995-06-12
申请人： Hitachi, Ltd.
发明人： Itoh, Fumikazu , Nakata, Toshihiko , Ishitani, Tohru , Shimase, Akira , Yamaguchi, Hiroshi , Kamimura, Takashi
IPC分类号： G01N1/00 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/32 , H01J37/226 , H01J37/3005 , H01J37/304 , H01J2237/30466 , H01J2237/3114 , H01J2237/31745

2. 发明公开

EP0687897A1 Method for making specimen and apparatus thereof 失效
标题翻译： Verfahren und Vorrichtung zur Probenherstellung
公开(公告)号：EP0687897A1
公开(公告)日：1995-12-20
申请号：EP95109035.6
申请日：1995-06-12
申请人： HITACHI, LTD.
发明人： Itoh, Fumikazu , Nakata, Toshihiko , Ishitani, Tohru , Shimase, Akira , Yamaguchi, Hiroshi , Kamimura, Takashi
IPC分类号： G01N1/00 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/32 , H01J37/226 , H01J37/3005 , H01J37/304 , H01J2237/30466 , H01J2237/3114 , H01J2237/31745
摘要： The present invention is intended to provide a method and an apparatus for making a specimen for use in observation through a transparent electron microscope, including a step for milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step for observing a mark for detection of position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the step for milling, and a step for compensating positional drift of the focused ion beam during said step for milling in accordance with a result of the observation.
The present invention provides an effect to strikingly raise the efficiency of TEM observation since a specimen for use in TEM observation can be made by precisely milling a thin film part of the specimen even though positional drift of the focused ion beam is caused during milling.
摘要翻译：本发明旨在提供一种通过透明电子显微镜制造用于观察的样本的方法和装置，包括将部分样品切成薄膜部分的步骤，其可以通过透明电子显微镜观察通过将聚焦离子束扫描并照射到样本上，通过扫描并将带电粒子束照射到样本上而不照射带电粒子束来观察用于检测在样本上提供的位置的标记作为二次带电粒子图像的步骤在用于研磨的步骤期间在待研磨到薄膜部分的部分上，以及根据观察结果在所述铣削步骤期间补偿聚焦离子束的位置漂移的步骤。本发明提供了显着提高TEM观察效率的效果，因为即使在研磨中发生聚焦离子束的位置漂移，也可以通过精确地研磨试样的薄膜部分来进行TEM观察用的试样。

3. 发明授权

EP0317952B1 Device having superlattice structure, and method of and apparatus for manufacturing the same 失效
标题翻译：具有用于其制造的超晶格结构和方法和装置的布置。
公开(公告)号：EP0317952B1
公开(公告)日：1994-03-16
申请号：EP88119409.6
申请日：1988-11-22
申请人： HITACHI, LTD.
发明人： Yamaguchi, Hiroshi , Saito, Keiya , Itoh, Fumikazu , Ishida, Koji , Sakano, Shinji E403 Hitachi-koyasudai-apartment , Tamura, Masao , Shukuri, Shoji , Ishitani, Tohru , Ichiguchi, Tsuneo A403 Hitachi-koyasudai-apartment
IPC分类号： H01L29/205 , H01L21/263 , H01L21/265 , H01L21/306 , H01L21/268 , H01L21/316
CPC分类号： H01J37/3056 , B82Y10/00 , H01J37/08 , H01L21/2633 , H01L21/26546 , H01L21/8221 , H01L21/8252 , H01L29/151 , Y10S148/046 , Y10S148/051 , Y10S148/084 , Y10S148/16 , Y10S438/962

4. 发明公开

EP0317952A2 Device having superlattice structure, and method of and apparatus for manufacturing the same 失效
标题翻译：具有用于其制造的超晶格结构和方法和装置的布置。
公开(公告)号：EP0317952A2
公开(公告)日：1989-05-31
申请号：EP88119409.6
申请日：1988-11-22
申请人： HITACHI, LTD.
发明人： Yamaguchi, Hiroshi , Saito, Keiya , Itoh, Fumikazu , Ishida, Koji , Sakano, Shinji E403 Hitachi-koyasudai-apartment , Tamura, Masao , Shukuri, Shoji , Ishitani, Tohru , Ichiguchi, Tsuneo A403 Hitachi-koyasudai-apartment
IPC分类号： H01L29/205 , H01L21/263 , H01L21/265 , H01L21/306 , H01L21/268 , H01L21/316
CPC分类号： H01J37/3056 , B82Y10/00 , H01J37/08 , H01L21/2633 , H01L21/26546 , H01L21/8221 , H01L21/8252 , H01L29/151 , Y10S148/046 , Y10S148/051 , Y10S148/084 , Y10S148/16 , Y10S438/962
摘要： An ion beam (113) focused into a diameter of at most 0.1 µm bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.
摘要翻译：平行于离子束（113）聚焦成直径为至多0.1微米基本上垂直轰击到一维超晶格结构的超晶格层，并在超晶格层的方向直线扫描，以便形成至少两个槽（108，109，110，111），或至少两个平行的杂质注入部件（2109）作为潜在的阻挡层，故可以制造二维超晶格结构的装置。的至少两个平行的凹槽（114，115，116，117）或杂质注入部分被进一步正交形成为二维超晶格结构，由此可以制造三维超晶格结构的装置的势垒层。此外，沉积份（2403 2404 2405）可能被进一步存入设置在绝缘体成它们由离子的扫描形成的槽（108，109，110，111，114，115，116，117）束。由于合成权宜之计，二维和三维超晶格结构的部分可以很容易地以高精度来制造。

5. 发明公开

EP0295065A3 Semiconductor integrated circuit device, method of making same or cutting method for same, and cutting system using energy beam for same 失效
标题翻译：半导体集成电路装置，其制造方法或其切割方法，以及使用能量束的切割系统
公开(公告)号：EP0295065A3
公开(公告)日：1991-07-03
申请号：EP88305199.7
申请日：1988-06-08
申请人： HITACHI, LTD.
发明人： Takahashi, Takahiko , Hayakawa, Hajime , Okamoto, Yoshihiko , Itoh, Fumikazu , Haraichi, Satoshi , Shimase, Akira , Kobayashi, Tohru , Anzai, Akio , Yamaguchi, Hiroshi , Hongo, Mikio
IPC分类号： H01L21/66 , H01L23/54 , H01L21/302
CPC分类号： H01L24/05 , H01J37/304 , H01J37/31 , H01L21/768 , H01L21/76879 , H01L21/76888 , H01L21/76892 , H01L21/76894 , H01L22/22 , H01L22/32 , H01L23/3121 , H01L23/5226 , H01L23/5254 , H01L23/544 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2223/5442 , H01L2223/54473 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05 , H01L2224/16 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48599 , H01L2224/73253 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/1204 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/15311 , H01L2924/19043 , H01L2924/20753 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要： In making defect correction and circuit change in a semiconductor integrated circuit device using a focused ion beam etching technique, the present invention relates to an IC or VLSI structure having a trial cutting region, a test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.

6. 发明公开

EP0295065A2 Semiconductor integrated circuit device, method of making same or cutting method for same, and cutting system using energy beam for same 失效
标题翻译：一种集成电路的半导体器件，制造或切割它和切割系统与能量用于其的方法束。
公开(公告)号：EP0295065A2
公开(公告)日：1988-12-14
申请号：EP88305199.7
申请日：1988-06-08
申请人： HITACHI, LTD.
发明人： Takahashi, Takahiko , Hayakawa, Hajime , Okamoto, Yoshihiko , Itoh, Fumikazu , Haraichi, Satoshi , Shimase, Akira , Kobayashi, Tohru , Anzai, Akio , Yamaguchi, Hiroshi , Hongo, Mikio
IPC分类号： H01L21/66 , H01L23/54 , H01L21/302
CPC分类号： H01L24/05 , H01J37/304 , H01J37/31 , H01L21/768 , H01L21/76879 , H01L21/76888 , H01L21/76892 , H01L21/76894 , H01L22/22 , H01L22/32 , H01L23/3121 , H01L23/5226 , H01L23/5254 , H01L23/544 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2223/5442 , H01L2223/54473 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/05 , H01L2224/16 , H01L2224/45015 , H01L2224/45144 , H01L2224/48463 , H01L2224/48599 , H01L2224/73253 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01061 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/1204 , H01L2924/12042 , H01L2924/1305 , H01L2924/14 , H01L2924/15311 , H01L2924/19043 , H01L2924/20753 , H01L2924/3025 , H01L2924/00 , H01L2224/45099 , H01L2224/85399 , H01L2224/05599
摘要： In making defect correction and circuit change in a semiconductor integrated circuit device using a focused ion beam etching technique, the present invention relates to an IC or VLSI structure having a trial cutting region, a test etching region and an auxiliary wiring or pad, suitable for the application of such defect correction and circuit change, as well as a method of making same, a designing method using such technique, and a focused ion beam system and other systems for use in those methods.
摘要翻译：在使用聚焦离子束蚀刻技术制造缺陷校正和电路变化的半导体集成电路器件中，本发明涉及一种在IC或VLSI结构具有试验切割区域，测试蚀刻区域和辅助布线或垫，适合搜索缺陷校正电路和变化的应用，以及制备其的方法，采用搜索技术的设计方法，和聚焦离子束系统和其他系统，用于这些方法中的用途。

7. 发明公开

EP0317952A3 Device having superlattice structure, and method of and apparatus for manufacturing the same 失效
标题翻译：具有超级结构的装置及其制造方法和装置
公开(公告)号：EP0317952A3
公开(公告)日：1990-01-31
申请号：EP88119409.6
申请日：1988-11-22
申请人： HITACHI, LTD.
发明人： Yamaguchi, Hiroshi , Saito, Keiya , Itoh, Fumikazu , Ishida, Koji , Sakano, Shinji E403 Hitachi-koyasudai-apartment , Tamura, Masao , Shukuri, Shoji , Ishitani, Tohru , Ichiguchi, Tsuneo A403 Hitachi-koyasudai-apartment
IPC分类号： H01L29/205 , H01L21/263 , H01L21/265 , H01L21/306 , H01L21/268 , H01L21/316
CPC分类号： H01J37/3056 , B82Y10/00 , H01J37/08 , H01L21/2633 , H01L21/26546 , H01L21/8221 , H01L21/8252 , H01L29/151 , Y10S148/046 , Y10S148/051 , Y10S148/084 , Y10S148/16 , Y10S438/962
摘要： An ion beam (113) focused into a diameter of at most 0.1 µm bombards substantially perpendicularly to the superlattice layers of a one-dimensional superlattice structure and is scanned rectilinearly in a direction of the superlattice layers so as to form at least two parallel grooves (108, 109, 110, 111) or at least two parallel impurity-implanted parts (2109) as potential barrier layers, whereby a device of two-dimensional superlattice structure can be manufactured. At least two parallel grooves (114, 115, 116, 117) or impurity-implanted parts are further formed orthogonally to the potential barrier layers of the two-dimensional superlattice structure, whereby a device of three-dimensional superlattice structure can be manufactured. In addition, deposition parts (2403, 2404, 2405) may well be provided by further depositing an insulator into the grooves (108, 109, 110, 111, 114, 115, 116, 117) which are formed by the scanning of the ion beam. Owing to these expedients, the portions of the two-dimensional and three-dimensional superlattice structures can be manufactured with ease and at high precision.

8. 发明授权

EP0083827B1 Coil winding and inserting machine 失效
标题翻译：线圈卷绕机
公开(公告)号：EP0083827B1
公开(公告)日：1986-09-03
申请号：EP82300108.6
申请日：1982-01-08
申请人： Hitachi, Ltd.
发明人： Itoh, Fumikazu , Fujita, Yasuhiro , Kobayashi, Takashi , Mufune, Takao
IPC分类号： H02K15/06 , H02K15/04
CPC分类号： H02K15/068 , H02K15/0435

9. 发明公开

EP0083827A1 Coil winding and inserting machine 失效
标题翻译： Maschine zum Wickeln und Einziehen von Spulen。
公开(公告)号：EP0083827A1
公开(公告)日：1983-07-20
申请号：EP82300108.6
申请日：1982-01-08
申请人： Hitachi, Ltd.
发明人： Itoh, Fumikazu , Fujita, Yasuhiro , Kobayashi, Takashi , Mufune, Takao
IPC分类号： H02K15/06 , H02K15/04
CPC分类号： H02K15/068 , H02K15/0435
摘要： A coil winding and inserting machine suitable for winding stator coils of 3-phase multipolar motors. The machine has a multiplicity of independently liftable tooling blades (325) and auxiliary plates (221). Three winding forms (31 u11, 31v11, 31 w11) are formed simultaneously or in a predetermined sequence, each being constituted by two tooling blades (325) and one auxiliary plate (221 u11, 221 v11, 221 w11) selectively lifted. Three flyers (389u, 389v, 389w) corresponding to the three winding forms (31 u11, 31v11, 31 w11) are rotated around these winding forms (31 u11, 31 v11, 31 w11) to form coils of the first pole of respective phases. Then, the flyers (389u, 389v, 389w) make a 180° indexing rotation and coils of the second pole are formed in the same manner as the coils of the first pole. After the winding of all coils, the coils are inserted into the stator core together with the wedges. Accordingly, it is possible to form the coils of u, v and w phases without cutting wires between two poles of respective phases, while ensuring an equal circumferential length of coils of all phases.
摘要翻译：适用于绕组3相多极电机定子线圈的线圈绕线和插入机。该机具有多个独立可升降的工具刀片（325）和辅助板（221）。三个绕组形式（31u11,31v11,31w11）同时或以预定的顺序形成，每个由两个工具刀片（325）和一个辅助板（221u11,221v11,221w11）选择性地提升构成。对应于三个绕组形式（31u11,31v11,31w11）的三个传单（389u，389v，389w）围绕这些绕组形式（31u11,31v11,31w11）旋转，以形成各相的第一极的线圈。然后，传单（389u，389v，389w）进行180°的分度旋转，第二极的线圈以与第一极的线圈相同的方式形成。在所有线圈的绕组之后，线圈与楔形件一起插入定子芯中。因此，可以在确保各相的线圈的周向长度的同时，在各相的两极之间形成u，v，w相的线圈而不切断线。

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