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1. 发明申请

WO2009011878A3 OPTICAL DEVICE INCLUDING WAVEGUIDE GRATING STRUCTURE 审中-公开
公开(公告)号：WO2009011878A3
公开(公告)日：2009-01-22
申请号：PCT/US2008/008715
申请日：2008-07-16
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WU, Wei , FATTAL, David , SANTORI, Charles , BICKNELL, Robert, N. , WANG, Shih-Yuan , WILLIAMS, R., Stanley , QUITORIANO, Nathaniel, J.
发明人： WU, Wei , FATTAL, David , SANTORI, Charles , BICKNELL, Robert, N. , WANG, Shih-Yuan , WILLIAMS, R., Stanley , QUITORIANO, Nathaniel, J.
IPC分类号： G02B6/34
摘要： Optical devices (100) including waveguide grating structures (102) are described. In accordance with one embodiment, an optical device (100) is provided comprising a horizontal waveguide grating structure (102) having at least one waveguiding layer (104) and at least one subwavelength periodic grating layer (106). The optical device (100) further comprises upper and lower cladding layers (108, 110) immediately adjoining respective upper and lower surfaces (209, 205) of the waveguide grating structure and having refractive indices lower than a lowest-index one of the waveguiding layers, incident radiation propagating (IN) through one of the upper and lower cladding layers (108, 110) toward the waveguide grating structure. The waveguide grating structure (102) is configured for peak reflection of the incident radiation at a peak reflection frequency. A cumulative thickness of the waveguiding layers (104) is less than one tenth of a free space wavelength of the incident radiation at the peak reflection frequency divided by an average refractive index of the waveguiding layers.

2. 发明申请

WO2006081565A1 MONOLITHIC SYSTEM AND METHOD FOR ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：用于增强拉曼光谱的单体系统和方法
公开(公告)号：WO2006081565A1
公开(公告)日：2006-08-03
申请号：PCT/US2006/003264
申请日：2006-01-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ISLAM, M., Saiful , WANG, Shih-Yuan , WU, Wei , LI, Zhiyong , WILLIAMS, R., Stanley
发明人： ISLAM, M., Saiful , WANG, Shih-Yuan , WU, Wei , LI, Zhiyong , WILLIAMS, R., Stanley
IPC分类号： G01N21/65 , G01J3/44
CPC分类号： G01N21/658 , G01N2201/0873
摘要： Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device (100', 100") for performing Raman spectroscopy comprises a substrate (110) and a laser source (120) disposed on the substrate (110). The laser source (120) may be configured for generating a laser radiation (125), which may irradiate an analyte (31 ) disposed on a Raman enhancement structure (300). The Raman enhancement structure (300) may be disposed in a waveguide (130). The molecular analysis device (100', 100") also includes a wavelength demultiplexer (240) and radiation sensors (290) disposed on the substrate (110) and configured for receiving a Raman scattered radiation (160), which may be generated by the irradiation of the analyte (310) and Raman enhancement structure (300).
摘要翻译：公开了用于增强拉曼光谱和超拉曼的装置，系统和方法。用于进行拉曼光谱分析的分子分析装置（100'，100“）包括基板（110）和设置在基板（110）上的激光源（120），激光源（120）可以被配置为产生激光辐射（125），其可以照射设置在拉曼增强结构（300）上的分析物（31），拉曼增强结构（300）可以设置在波导管（130）中，分子分析装置（100'，100“）还包括布置在衬底（110）上并被配置用于接收拉曼散射辐射（160）的波长解复用器（240）和辐射传感器（290），其可以通过分析物（310）的照射和拉曼增强结构（300）。

3. 发明申请

WO2010151260A1 SWITCHABLE JUNCTION WITH INTRINSIC DIODES WITH DIFFERENT SWITCHING THRESHOLDS 审中-公开
标题翻译：具有不同开关阈值的内置二极管的可切换接点
公开(公告)号：WO2010151260A1
公开(公告)日：2010-12-29
申请号：PCT/US2009/048627
申请日：2009-06-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , WANG, Shih-Yuan , WILLIAMS, R., Stanley
发明人： YANG, Jianhua , WANG, Shih-Yuan , WILLIAMS, R., Stanley
IPC分类号： H01L29/861 , H01L29/872 , H01L29/417
CPC分类号： H01L29/872 , H01L27/101 , H01L27/1021
摘要： A switchable junction (600) having intrinsic diodes with different switching thresholds is disclosed. The switchable junction comprises a first electrode (610) formed of a first conductive material and a second electrode (630) formed of a second conductive material. The junction (600) further includes a memristive matrix (615) configured to form a first and a second electrical interface with the first and second electrodes to form a first rectifying diode interface (626) with a first switching threshold and a second rectifying diode interface (628) with a second switching threshold.
摘要翻译：公开了具有不同开关阈值的本征二极管的可切换接点（600）。可切换接头包括由第一导电材料形成的第一电极（610）和由第二导电材料形成的第二电极（630）。结（600）还包括忆阻矩阵（615），其构造成与第一和第二电极形成第一和第二电接口以形成具有第一开关阈值的第一整流二极管接口（626）和第二整流二极管接口（628）具有第二切换阈值。

4. 发明申请

WO2009055017A1 DYNAMIC OPTICAL SIGNAL TRACKING ON A DETECTOR ARRAY IN A FREE SPACE OPTICAL COMMUNICATION SYSTEM 审中-公开
标题翻译：在自由空间光通信系统中的检测器阵列上的动态光信号跟踪
公开(公告)号：WO2009055017A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/012097
申请日：2008-10-23
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , MORRIS, Terrel , TAN, Michael, Renne, Ty , WANG, Shih-yuan , WILLIAMS, R., Stanley , STEWART, Duncan , FIORENTINO, Marco
发明人： MORRIS, Terrel , TAN, Michael, Renne, Ty , WANG, Shih-yuan , WILLIAMS, R., Stanley , STEWART, Duncan , FIORENTINO, Marco
IPC分类号： G02B6/10
CPC分类号： H04B10/1121
摘要： A free-space optical communication system includes a detector array(102; 202) having a plurality of detector elements (204) and a transmitting source(210; 310). Dynamic movement of the optical signal on the detector array is caused by changes in orientation of the transmitting source. A tracker (206) tracks the movement of the optical signal in real-time on the detector array. An output signal is derived from at least one of the detector elements illuminated by the optical signal.
摘要翻译：自由空间光通信系统包括具有多个检测器元件（204）和发射源（210; 310）的检测器阵列（102; 202）。光信号在探测器阵列上的动态移动是由发射源方向的变化引起的。跟踪器（206）在检测器阵列上实时跟踪光信号的移动。从由光信号照亮的检测器元件中的至少一个导出输出信号。

5. 发明申请

WO2008013778A2 COMPENSATION FOR DISTORTION IN CONTACT LITHOGRAPHY 审中-公开
标题翻译：补偿接触光刻中的失真
公开(公告)号：WO2008013778A2
公开(公告)日：2008-01-31
申请号：PCT/US2007/016580
申请日：2007-07-24
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , WU, Wei , STEWART, Duncan , WANG, Shih-Yuan , WILLIAMS, R., Stanley
发明人： WU, Wei , STEWART, Duncan , WANG, Shih-Yuan , WILLIAMS, R., Stanley
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold (110) to a substrate (130) during a contact lithography process: and modifying the mold (110) to compensate for the distortions. A contact lithography system includes a design subsystem (210) configured to generate data describing a lithography pattern: an analysis subsystem (220) configured to identify one or more distortions likely to occur when using a mold (110) created from the data; and a mold modification subsystem (230) configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem (220).
摘要翻译：接触光刻的方法包括预测在接触光刻过程中将图案从模具（110）转印到基板（130）时可能发生的扭曲：以及修改模具（110）以补偿为扭曲。一种接触光刻系统包括被配置为产生描述光刻图案的数据的设计子系统（210）：分析子系统（220），其被配置为识别在使用从数据创建的模具（110）时可能发生的一个或多个失真; 和模具修改子系统（230），其被配置为修改数据以补偿由分析子系统（220）识别的一个或多个失真。

6. 发明申请

WO2006115968A2 ACTIVE INTERCONNECTS AND CONTROL POINTS IN INTEGRATED CIRCUITS 审中-公开
标题翻译：集成电路中的主动互连和控制点
公开(公告)号：WO2006115968A2
公开(公告)日：2006-11-02
申请号：PCT/US2006/014856
申请日：2006-04-19
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , WILLIAMS, R., Stanley , KUEKES, Phillip, J. , PERNER, Frederick, A. , SNIDER, Gregory, S. , STEWART, Duncan
发明人： WILLIAMS, R., Stanley , KUEKES, Phillip, J. , PERNER, Frederick, A. , SNIDER, Gregory, S. , STEWART, Duncan
IPC分类号： H01L21/66
CPC分类号： H05K7/1092 , H01L23/5228 , H01L2924/0002 , H01L2924/00
摘要： In various embodiments of the present invention, tunable resistors (1102) are introduced at the interconnect layer of the integrated circuits (102) in order to provide a means for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronics characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors (1102) included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains. In some cases, components and modules may be turned off, while, in other cases, components and modules may be turned on.
摘要翻译：在本发明的各种实施例中，可调谐电阻器（1102）被引入集成电路（102）的互连层，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或配置后续制造的集成电路。例如，当诸如晶体管的某些内部部件由于制造缺陷而没有指定的电子特性时，根据本发明的实施例调整包括在集成电路的互连层中的可调电阻器（1102）的可变电阻可以用于调整内部电压和/或电平，以改善有缺陷的部件。在其他情况下，可调谐电阻器可以用作开关来配置集成电路组件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。在某些情况下，可能会关闭组件和模块，而在其他情况下，可能会打开组件和模块。

7. 发明申请

WO2011093888A1 OPTICAL SENSOR NETWORKS AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：光传感器网络及其制作方法
公开(公告)号：WO2011093888A1
公开(公告)日：2011-08-04
申请号：PCT/US2010/022640
申请日：2010-01-29
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY L.P. , CHO, Hans, S. , BRATKOVSKI, Alexandre, M. , WILLIAMS, R., Stanley , HARTWELL, Peter, George
发明人： CHO, Hans, S. , BRATKOVSKI, Alexandre, M. , WILLIAMS, R., Stanley , HARTWELL, Peter, George
IPC分类号： H04B10/12 , H04B10/00
CPC分类号： G02B6/2938 , G01D5/268 , G01N21/7703 , G01N2021/7793 , G02B6/136 , G02B6/4403
摘要： Various embodiments of the present invention are directed to sensor networks and to methods for fabricating sensor networks. In one aspect, a sensor network includes a processing node (110, 310), and one or more sensor lines (102,202,302) optically coupled to fee processing node. Each sensor line comprises a waveguide {116,216,316), and one or more sensor nodes (112,210), Each sensor node is optically coupled to the waveguide and configured to measure one or more physical conditions and encode measurement results in one or more wavelengths of light carried by the waveguide to the processing node.
摘要翻译：本发明的各种实施例涉及传感器网络以及用于制造传感器网络的方法。在一个方面，传感器网络包括处理节点（110,310）以及与费用处理节点光耦合的一个或多个传感器线（102,202,302）。每个传感器线包括波导{116,216,316）和一个或多个传感器节点（112,210），每个传感器节点光学耦合到波导并且被配置成测量一个或多个物理条件，并且在携带的光的一个或多个波长中编码测量结果通过波导到处理节点。

8. 发明申请

WO2011002443A1 INDIVIDUALLY ADDRESSABLE NANO-SCALE MECHANICAL ACTUATORS 审中-公开
标题翻译：独立的纳米尺度机械执行器
公开(公告)号：WO2011002443A1
公开(公告)日：2011-01-06
申请号：PCT/US2009/049156
申请日：2009-06-30
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , WILLIAMS, R., Stanley , TONG, William
发明人： YANG, Jianhua , WILLIAMS, R., Stanley , TONG, William
IPC分类号： B81B7/00 , B81B7/04
CPC分类号： F03G7/005
摘要： An addressable nano-scale mechanical actuator is formed at the intersection of two nanowires. The actuator has an active region disposed between the two nanowires, which form the electrodes of the actuator. The active region contains an electrolytically decomposable material. When an activation voltage is applied to the electrodes, the material releases a gas that forms a bubble at one electrode, causing a bulging of a top surface of the actuator. The bulging may be used, via mechanical coupling, to provide mechanical actuation on a nanometer scale. The nanowires may be arranged in a two-dimensional array to provide an array of individually addressable actuators.
摘要翻译：在两个纳米线的交叉处形成可寻址的纳米级机械致动器。致动器具有设置在两个纳米线之间的有源区域，其形成致动器的电极。活性区域含有电解质的材料。当激活电压施加到电极时，材料释放在一个电极处形成气泡的气体，导致致动器的顶表面膨胀。可以通过机械耦合使用凸起来提供纳米尺度的机械致动。纳米线可以被布置成二维阵列以提供单独可寻址致动器的阵列。

9. 发明申请

WO2010110803A1 SWITCHABLE JUNCTION WITH INTRINSIC DIODE 审中-公开
标题翻译：具有内置二极管的可切换连接
公开(公告)号：WO2010110803A1
公开(公告)日：2010-09-30
申请号：PCT/US2009/038682
申请日：2009-03-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , STRUKOV, Dmitri, Borisovich , WILLIAMS, R., Stanley
发明人： YANG, Jianhua , STRUKOV, Dmitri, Borisovich , WILLIAMS, R., Stanley
IPC分类号： H01L29/861 , H01L29/872 , H01L27/115 , H01L21/8247 , H01L29/40
CPC分类号： H01L27/101 , B82Y10/00 , H01L27/1021 , H01L29/861 , H01L29/872
摘要： A switchable junction (600) with an intrinsic diode includes a first electrode (635) and second electrode (640). A first memristive matrix (605) forms an electrical interface (625) with the first electrode (635) which has a programmable conductance. A semiconductor matrix (615) is electrical contact with the first memristive matrix (605) and forms a rectifying diode interface (630) with the second electrode (640).
摘要翻译：具有本征二极管的可切换结（600）包括第一电极（635）和第二电极（640）。第一忆阻矩阵（605）与具有可编程电导的第一电极（635）形成电接口（625）。半导体矩阵（615）与第一忆阻矩阵（605）电接触并与第二电极（640）形成整流二极管接口（630）。

10. 发明申请

WO2012044276A1 DEVICE STRUCTURE FOR LONG ENDURANCE MEMRISTORS 审中-公开
标题翻译：长寿命仪器的器件结构
公开(公告)号：WO2012044276A1
公开(公告)日：2012-04-05
申请号：PCT/US2010/050381
申请日：2010-09-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , YANG, Jianhua , ZHANG, Minxian, Max , WILLIAMS, R., Stanley
发明人： YANG, Jianhua , ZHANG, Minxian, Max , WILLIAMS, R., Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/14 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/1608
摘要： A memristor (100) includes a first electrode (102) formed of a first metal, a second electrode (104) formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer (110) positioned between the first electrode (102) and the second electrode (104). The switching layer (110) is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer (110) is in direct contact with the first electrode (102) and in which at least one conduction channel (120) is configured to be formed in the switching layer (110) from an interaction between the first metal and the second nonmetal material.
摘要翻译：忆阻器（100）包括由第一金属形成的第一电极（102），由第二材料形成的第二电极（104），其中第二材料包括与第一金属不同的材料，以及开关层（110）位于第一电极（102）和第二电极（104）之间。开关层（110）由包括第一金属和第二非金属材料的第一材料的组合物形成，其中开关层（110）与第一电极（102）直接接触，并且其中至少一个导电沟道（120）被配置为从第一金属和第二非金属材料之间的相互作用形成在开关层（110）中。

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