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1. 发明授权

US08548281B2 Electro-optic modulating device 有权
标题翻译：电光调制装置
公开(公告)号：US08548281B2
公开(公告)日：2013-10-01
申请号：US12872881
申请日：2010-08-31
申请人： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
发明人： Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2201/063
摘要： Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要翻译：提供了一种电光调制装置。电光调制装置包括具有垂直结构的光波导，垂直结构的侧壁用于构造接合部。

2. 发明申请

US20110135252A1 SILICON PHOTONICS CHIP 审中-公开
标题翻译：硅胶片
公开(公告)号：US20110135252A1
公开(公告)日：2011-06-09
申请号：US12816323
申请日：2010-06-15
申请人： Do Won KIM , Gyungock Kim , Junghyung Pyo , Duk Jun Kim , In Gyoo Kim
发明人： Do Won KIM , Gyungock Kim , Junghyung Pyo , Duk Jun Kim , In Gyoo Kim
IPC分类号： G02B6/30 , G02B6/10
CPC分类号： G02B6/43 , G02B6/262 , G02B6/4292
摘要： Provided is a silicon photonics chip that is thermally separated from a light emitting device. The silicon photonics chip includes photoelectric devices integrated on a silicon substrate. The photoelectric devices include an optical connection device optically guiding at least one signal light incident from a signal light generation device to transmit the signal light into the silicon substrate. The signal light generation device is thermally separated from the photoelectric devices, and is optically connected to the photoelectric devices.
摘要翻译：提供了与发光器件热分离的硅光子芯片。硅光子芯片包括集成在硅衬底上的光电器件。光电装置包括光学连接装置，其光引导从信号光产生装置入射的至少一个信号光，以将信号光传输到硅衬底。信号光产生装置与光电装置热分离，并与光电装置光学连接。

3. 发明申请

US20110133187A1 PHOTO DETECTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：相片检测器及其制造方法
公开(公告)号：US20110133187A1
公开(公告)日：2011-06-09
申请号：US12765705
申请日：2010-04-22
申请人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , Dongwoo Suh , Jiho Joo , Ki Seok Jang
发明人： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , Dongwoo Suh , Jiho Joo , Ki Seok Jang
IPC分类号： H01L31/0256 , H01L31/18 , H01L31/0232
CPC分类号： G02B6/12004 , G02B2006/12176 , G02B2006/12188 , H01L31/105 , H01L31/1804 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.
摘要翻译：提供了一种光电检测器的制造方法。该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

4. 发明授权

US08761553B2 Optical network structures for multi-core central processor unit 有权
标题翻译：多核中央处理器单元的光网络结构
公开(公告)号：US08761553B2
公开(公告)日：2014-06-24
申请号：US13302371
申请日：2011-11-22
申请人： Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
发明人： Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
IPC分类号： G02B6/26 , G02B6/12
CPC分类号： H04J14/028 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/4087 , H04J14/02 , H04J14/0201
摘要： Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.
摘要翻译：提供了一种光网络结构。为了在CPU中配置数百个或更多个核心之间的光网络结构，不会发生波导之间的交叉，因此，光网络结构在所有核心之间实现双向通信，而光交换机不设置在交叉点。本发明使得能够使用硅光子学光学元件的单芯片光网络，并且可以开发配置有数百或数千个核的CPU芯片。

5. 发明申请

US20100110546A1 PHOTONICS DEVICE 审中-公开
标题翻译：光电设备
公开(公告)号：US20100110546A1
公开(公告)日：2010-05-06
申请号：US12541710
申请日：2009-08-14
申请人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
发明人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： G02B5/18
CPC分类号： G02B6/305 , G02B6/264 , G02B6/32
摘要： Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.
摘要翻译：提供了一种光子器件。光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

6. 发明申请

US20130156369A1 RING RESONATORS HAVING Si AND/OR SiN WAVEGUIDES 审中-公开
标题翻译：具有Si和/或SiN波长的环形谐振器
公开(公告)号：US20130156369A1
公开(公告)日：2013-06-20
申请号：US13535746
申请日：2012-06-28
申请人： Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
发明人： Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
IPC分类号： G02B6/12
CPC分类号： G02B6/12007 , G02B2006/12061
摘要： Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.
摘要翻译：提供了一种环形谐振器，包括彼此间隔开地布置在衬底上的第一和第二波导，以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。第一和第二波导和环形波导可以由硅形成，环形波导的宽度可以在0.7μm到1.5μm的范围内，环形波导的高度可以在150nm到300nm的范围内，第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。

7. 发明申请

US20100150500A1 OPTICAL DEVICE 失效
标题翻译：光学装置
公开(公告)号：US20100150500A1
公开(公告)日：2010-06-17
申请号：US12491454
申请日：2009-06-25
申请人： Junghyung PYO , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
发明人： Junghyung PYO , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： G02B6/34 , G02B6/26
CPC分类号： G02B6/1228 , G02B6/12004 , G02B6/124 , G02B6/34
摘要： Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.
摘要翻译：提供了一种光学装置，其包括基板，设置在基板上的第一包层，在第一包层上沿第一方向延伸的第一光波导，并且具有第一折射率，在至少一侧形成的侧光栅所述第一光波导，填充所述侧光栅的空间的第二光波导，沿着所述第一包层上的所述第一方向的第二方向延伸并具有第二折射率，以及设置在所述第二光波导上的第二包层，以及具有第三折射率，其中所述第一折射率大于所述第二折射率，并且所述第二折射率大于所述第三折射率。

8. 发明申请

US20100130010A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造光限制半导体器件的方法和制造半导体器件的设备
公开(公告)号：US20100130010A1
公开(公告)日：2010-05-27
申请号：US12538080
申请日：2009-08-07
申请人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
发明人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： H01L21/308 , G01B11/27
CPC分类号： H01L21/0338 , G01B11/27 , G03F9/7069 , G03F9/7088 , H01L21/0337
摘要： Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.
摘要翻译：提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

9. 发明授权

US07881574B2 Optical device 失效
标题翻译：光学装置
公开(公告)号：US07881574B2
公开(公告)日：2011-02-01
申请号：US12491454
申请日：2009-06-25
申请人： Junghyung Pyo , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
发明人： Junghyung Pyo , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： G02B6/34
CPC分类号： G02B6/1228 , G02B6/12004 , G02B6/124 , G02B6/34
摘要： Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.
摘要翻译：提供了一种光学装置，其包括基板，设置在基板上的第一包层，在第一包层上沿第一方向延伸的第一光波导，并且具有第一折射率，在至少一侧形成的侧光栅所述第一光波导，填充所述侧光栅的空间的第二光波导，沿着所述第一包层上的所述第一方向的第二方向延伸并具有第二折射率，以及设置在所述第二光波导上的第二包层，以及具有第三折射率，其中所述第一折射率大于所述第二折射率，并且所述第二折射率大于所述第三折射率。

10. 发明授权

US08859319B2 Methods of forming photo detectors 有权
标题翻译：形成光电检测器的方法
公开(公告)号：US08859319B2
公开(公告)日：2014-10-14
申请号：US13612736
申请日：2012-09-12
申请人： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
发明人： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
摘要： Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
摘要翻译：提供了形成光电检测器的方法。该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

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