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1. 发明授权

US4242603A Dynamic storage element 失效
标题翻译：动态存储元件
公开(公告)号：US4242603A
公开(公告)日：1980-12-30
申请号：US907013
申请日：1978-05-18
申请人： Guenther Meusburger , Karl Knauer , Jenoe Tihanyi
发明人： Guenther Meusburger , Karl Knauer , Jenoe Tihanyi
IPC分类号： H01L27/108 , G11C11/34 , G11C11/35 , H01L21/8242 , H01L29/10 , H01L29/78 , H01L27/04
CPC分类号： H01L29/78 , G11C11/34 , G11C11/35 , H01L29/1033
摘要： A dynamic storage element has an electrically insulating layer carried on a substrate of semiconductor material. A conductor path, provided with a terminal, is arranged on the electrically insulating layer, and first and second zones, doped oppositely to the substrate, are provided on the surface of the substrate. The zones are spaced from one another. In that region of the substrate between the zones the substrate is more highly doped with dopants of the same type as those contained in the substrate and the conductor path extends above the highly doped region.
摘要翻译：动态存储元件具有承载在半导体材料的衬底上的电绝缘层。设置有端子的导体路径设置在电绝缘层上，并且在衬底的表面上设置与衬底相反掺杂的第一和第二区域。这些区域彼此间隔开。在这些区域之间的衬底的该区域中，衬底更加掺杂与衬底中包含的掺杂物相同类型的掺杂剂，并且导体路径在高掺杂区域上方延伸。

2. 发明授权

US06891204B2 Semiconductor component having field-shaping regions 失效
标题翻译：具有场成形区域的半导体元件
公开(公告)号：US06891204B2
公开(公告)日：2005-05-10
申请号：US09816927
申请日：2001-03-23
申请人： Heinrich Brunner , Franz Auerbach , Jenoe Tihanyi
发明人： Heinrich Brunner , Franz Auerbach , Jenoe Tihanyi
IPC分类号： H01L29/744 , H01L29/06 , H01L29/78 , H01L29/32 , H01L29/423
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/7802
摘要： A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.
摘要翻译：半导体元件具有第一导电类型的半导体本体。半导体本体具有嵌入第二导电类型的区域。第二导电类型的其他区域像井一样围绕第二导电类型的区域。另外的区域通过由半导体本体形成的沟道在至少一个位置处中断。另外的区域掺杂了足够高的掺杂浓度，使得当半导体元件被重新偏置时，其他区域不会完全耗尽电荷载流子。

3. 发明申请

US20050082591A1 Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone 有权
标题翻译：具有带场电极的漂移区的垂直半导体元件及其制造方法
公开(公告)号：US20050082591A1
公开(公告)日：2005-04-21
申请号：US10927948
申请日：2004-08-27
申请人： Franz Hirler , Ralf Henninger , Frank Pfirsch , Markus Zundel , Jenoe Tihanyi
发明人： Franz Hirler , Ralf Henninger , Frank Pfirsch , Markus Zundel , Jenoe Tihanyi
IPC分类号： H01L29/06 , H01L29/40 , H01L29/739 , H01L29/78 , H01L29/861
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/402 , H01L29/407 , H01L29/7813 , H01L29/861
摘要： The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features: a semiconductor body (100) having a first side (101) and a second side (102), a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage, a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A-40E; 90A-90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A-40E; 90A-90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.
摘要翻译：本发明涉及一种用于制造垂直半导体部件和具有以下特征的垂直半导体部件的漂移区的方法：具有第一侧（101）和第二侧（102）的半导体本体（100），漂移第一导电类型的区域（30）布置在第一和第二侧面（101,102）之间的区域中并且被形成为用于吸收反向电压的目的，设置在漂移区域中的场电极布置（ 30），并且具有以与半导体本体（100）绝缘的方式布置的至少一个导电场电极（40; 40A-40E; 90A-90J），所述至少一个场电极 40; 40A-40E; 90A-90J），至少在施加反向电压时，在半导体本体（100）的垂直方向上变化。

4. 发明授权

US06717788B2 Temperature-protected semiconductor circuit configuration 有权
标题翻译：温度保护半导体电路配置
公开(公告)号：US06717788B2
公开(公告)日：2004-04-06
申请号：US09784766
申请日：2001-02-15
申请人： Peter Sommer , Jenoe Tihanyi
发明人： Peter Sommer , Jenoe Tihanyi
IPC分类号： H02H504
CPC分类号： H03K17/18 , H01L27/0248 , H01L2924/0002 , H03K17/0822 , H03K2017/0806 , H01L2924/00
摘要： A temperature-protected semiconductor circuit configuration that has an integrated switching unit. The switching unit is formed of a semiconductor switch, a first integrated temperature sensor for driving the semiconductor switch when an over-temperature is reached, first and second connecting terminals for connecting a load, and a control terminal for applying a drive signal for the semiconductor switch. A second temperature sensor is connected in a heat-conducting manner to the switching unit which exhibits at least one output terminal for providing a temperature-dependent temperature signal.
摘要翻译：具有集成开关单元的温度保护半导体电路配置。开关单元由半导体开关构成，当达到过温时用于驱动半导体开关的第一集成温度传感器，用于连接负载的第一和第二连接端子以及用于施加用于半导体的驱动信号的控制端子开关。第二温度传感器以导热方式连接到具有至少一个输出端子的开关单元，用于提供与温度相关的温度信号。

5. 发明授权

US06693314B2 Junction field-effect transistor with more highly doped connecting region 有权
标题翻译：具有更高掺杂连接区域的结型场效应晶体管
公开(公告)号：US06693314B2
公开(公告)日：2004-02-17
申请号：US09888037
申请日：2001-06-22
申请人： Heinz Mitlehner , Dietrich Stephani , Jenoe Tihanyi
发明人： Heinz Mitlehner , Dietrich Stephani , Jenoe Tihanyi
IPC分类号： H01L2980
CPC分类号： H01L29/8083
摘要： A junction field-effect transistor containing a semiconductor region with an inner region is described. In addition, a first and a second connecting region, respectively, are disposed within the semiconductor region. The first connecting region has the same conductivity type as the inner region, but in a higher doping concentration. The second connecting region has the opposite conductivity type to that of the inner region. This reduces the forward resistance while at the same time maintaining a high reverse voltage strength.
摘要翻译：描述了包含具有内部区域的半导体区域的结型场效应晶体管。此外，第一和第二连接区域分别设置在半导体区域内。第一连接区域具有与内部区域相同的导电类型，但是掺杂浓度较高。第二连接区域具有与内部区域相反的导电类型。这降低了正向电阻，同时保持了高的反向电压强度。

6. 发明授权

US06479876B1 Vertical power MOSFET 有权
标题翻译：垂直功率MOSFET
公开(公告)号：US06479876B1
公开(公告)日：2002-11-12
申请号：US09462759
申请日：2000-10-12
申请人： Gerald Deboy , Jenoe Tihanyi
发明人： Gerald Deboy , Jenoe Tihanyi
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/167 , H01L29/32
摘要： The invention relates to a vertical power MOSFET having additional column-like zones (11, 12) which are arranged in an inner zone (1) and have the same and the opposite conductivity type as/to the inner zone (1). The charge carrier life is reduced in the additional zones (12), which are of the same conductivity type as the inner zone (1), and the inner zone (1) is dimensioned such that the space charge zone does not reach the junction between the inner zone and a drain zone.
摘要翻译：本发明涉及具有附加的柱状区域（11,12）的垂直功率MOSFET，其布置在内部区域（1）中并且具有与内部区域（1）相同的导电类型。在与内部区域（1）具有相同导电类型的附加区域（12）中减少电荷载体寿命，并且内部区域（1）的尺寸被设计成使得空间电荷区域不会到达内部区域和排水区域。

7. 发明授权

US06365919B1 Silicon carbide junction field effect transistor 有权
标题翻译：碳化硅结场效应晶体管
公开(公告)号：US06365919B1
公开(公告)日：2002-04-02
申请号：US09530622
申请日：2000-07-11
申请人： Jenoe Tihanyi , Heinz Mitlehner , Wolfgang Bartsch
发明人： Jenoe Tihanyi , Heinz Mitlehner , Wolfgang Bartsch
IPC分类号： H01L310312
CPC分类号： H01L29/45 , H01L21/0485 , H01L29/0634 , H01L29/1608 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/66068 , H01L29/7838
摘要： A lateral silicon carbide junction field effect transistor has p-conductive and n-conductive silicon carbide layers. The layers are provided in pairs in lateral direction in a silicon carbide body. Trenches for a source, a drain and a gate extend from a principal surface of the silicon carbide body and penetrate the layers. The source and drain trenches are filled with silicon carbide of one conductivity type, whereas the trench for the gate is filled with silicon carbide of a conductivity type that is different from the source and the drain.
摘要翻译：横向碳化硅结场效应晶体管具有p导电和n导电碳化硅层。这些层在碳化硅体中沿横向成对设置。用于源极，漏极和栅极的沟槽从碳化硅本体的主表面延伸并穿透层。源极和漏极沟槽填充有一种导电类型的碳化硅，而用于栅极的沟槽填充有不同于源极和漏极的导电类型的碳化硅。

8. 发明授权

US06326656B1 Lateral high-voltage transistor 有权
标题翻译：横向高压晶体管
公开(公告)号：US06326656B1
公开(公告)日：2001-12-04
申请号：US09511813
申请日：2000-02-24
申请人： Jenoe Tihanyi
发明人： Jenoe Tihanyi
IPC分类号： H01L2972
CPC分类号： H01L29/7816 , H01L29/0623 , H01L29/0634
摘要： A lateral high-voltage transistor has a semiconductor body made of a lightly doped semiconductor substrate of a first conductivity type and an epitaxial layer of a second conductivity type. The epitaxial layer is provided on the semiconductor substrate. The lateral high-voltage transistor has a drain electrode, a source electrode, a gate electrode and a semiconductor zone of the first conductivity type which is provided under the gate electrode and is embedded in the epitaxial layer. Between the source electrode and the drain electrode trenches are provided in lines and rows in the semiconductor layer. The walls of the trenches are highly doped with dopants of the first conductivity type.
摘要翻译：横向高压晶体管具有由第一导电类型的轻掺杂半导体衬底和第二导电类型的外延层制成的半导体本体。外延层设置在半导体衬底上。横向高压晶体管具有漏极电极，源极电极，栅极电极和第一导电类型的半导体区域，其设置在栅电极下方并嵌入在外延层中。在源电极和漏电极沟槽之间设置有半导体层中的行和列。沟槽的壁被高掺杂有第一导电类型的掺杂剂。

9. 发明授权

US06184545B2 Semiconductor component with metal-semiconductor junction with low reverse current 有权
标题翻译：具有低反向电流的金属半导体结的半导体元件
公开(公告)号：US06184545B2
公开(公告)日：2001-02-06
申请号：US09152827
申请日：1998-09-14
申请人： Wolfgang Werner , Jenoe Tihanyi
发明人： Wolfgang Werner , Jenoe Tihanyi
IPC分类号： H01L2974
CPC分类号： H01L29/861 , H01L29/0619 , H01L29/0634 , H01L29/872
摘要： The semiconductor component, such as a Schottky diode with a low leakage current, has a metal-semiconductor junction between a first metal electrode and the semiconductor. The semiconductor, which is of a first conductivity type, has a defined drift path and a plurality of supplementary zones of a second conductivity type extending from the semiconductor surface into the drift path. A number of foreign atoms in the supplementary zones is substantially equal to a number of foreign atoms in intermediate zones surrounding the supplementary zones and the number of foreign atoms does not exceed a number corresponding to a breakdown charge of the semiconductor.
摘要翻译：诸如具有低漏电流的肖特基二极管的半导体元件在第一金属电极和半导体之间具有金属 - 半导体结。具有第一导电类型的半导体具有限定的漂移路径和从半导体表面延伸到漂移路径中的第二导电类型的多个补充区。补充区域中的多个外来原子基本上等于在补充区域周围的中间区域中的多个外来原子，并且外来原子的数量不超过对应于半导体的击穿电荷的数量。

10. 发明授权

US5986441A Circuit configuration for capturing the load current of a power semiconductor component with a load on the source side 有权
标题翻译：用于捕获源极侧的负载的功率半导体部件的负载电流的电路配置
公开(公告)号：US5986441A
公开(公告)日：1999-11-16
申请号：US250869
申请日：1999-02-16
申请人： Adam-Istvan Koroncai , Jenoe Tihanyi
发明人： Adam-Istvan Koroncai , Jenoe Tihanyi
IPC分类号： G01R19/165 , G05F1/573
CPC分类号： G01R19/16519
摘要： The circuit configuration captures the load current of a field effect-controllable power semiconductor component. The drain and gate terminals of a further field effect-controllable semiconductor component are connected to the drain and gate terminals, respectively, of the first semiconductor component. A fraction of the load current flows through the further semiconductor component. The load current of the further semiconductor component is set as a function of the drain-to-source voltage of the two semiconductor components. The load current flowing through the further semiconductor component is compared with a reference current and an output signal is generated if the load current falls below a set value.
摘要翻译：电路配置捕获场效应可控功率半导体元件的负载电流。另外的场效应可控半导体元件的漏极和栅极端子分别连接到第一半导体部件的漏极和栅极端子。一部分负载电流流过另外的半导体元件。另外的半导体部件的负载电流被设定为两个半导体部件的漏极 - 源极电压的函数。将流过另外的半导体部件的负载电流与参考电流进行比较，并且如果负载电流低于设定值，则产生输出信号。

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