专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5001593A Circuit configuration for temperature monitoring of power switching transistors integrated in a semiconductor circuit 失效
标题翻译：集成在半导体电路中的功率开关晶体管的温度监测电路配置
公开(公告)号：US5001593A
公开(公告)日：1991-03-19
申请号：US511625
申请日：1990-04-20
申请人： Heinz Zitta , Adam-Istvan Koroncai , Johann Massoner
发明人： Heinz Zitta , Adam-Istvan Koroncai , Johann Massoner
IPC分类号： H02H3/00 , H02H5/04 , H03K17/08 , H03K17/082
CPC分类号： H03K17/0826 , H02H3/006 , H02H5/044 , H03K2017/0806 , Y10S323/907
摘要： A circuit configuration for monitoring the temperature of power switching transistor integrated in a semiconductor circuit for overload protection includes temperature sensors each being associated with one respective power switching transistor for detecting the circuit temperature and issuing an output signal. Comparison stages are each connected to a respective one of the temperature sensors for comparing the output signal of one of the temperature sensors with a first reference corresponding to a first predetermined temperature value and switching off only the power switching transistor associated therewith upon attainment of the first predetermined temperature value. Logic elements are each connected to a respective one of the comparison for switching over the comparison stages associated with all of the other power switching transistors from the first reference corresponding to the first predetermined temperature value to a second reference corresponding to a second predetermined temperature value being higher than the first predetermined temperature value, upon attainment of the first predetermined temperature value at, and the shutoff of, a power switching transistor.
摘要翻译：集成在用于过载保护的半导体电路中的功率开关晶体管的温度的电路配置包括各自与各个功率开关晶体管相关联的温度传感器，用于检测电路温度并发出输出信号。比较级各自连接到相应的一个温度传感器，用于将温度传感器之一的输出信号与对应于第一预定温度值的第一参考值进行比较，并且仅在达到第一预定温度值时关闭与其关联的功率开关晶体管预定温度值。逻辑元件各自连接到比较中的相应一个，用于将与所有其它功率开关晶体管相关联的比较级从与第一预定温度值对应的第一参考切换到对应于第二预定温度值的第二参考值高于第一预定温度值，达到功率开关晶体管的第一预定温度值和关闭时。

2. 发明授权

US5986441A Circuit configuration for capturing the load current of a power semiconductor component with a load on the source side 有权
标题翻译：用于捕获源极侧的负载的功率半导体部件的负载电流的电路配置
公开(公告)号：US5986441A
公开(公告)日：1999-11-16
申请号：US250869
申请日：1999-02-16
申请人： Adam-Istvan Koroncai , Jenoe Tihanyi
发明人： Adam-Istvan Koroncai , Jenoe Tihanyi
IPC分类号： G01R19/165 , G05F1/573
CPC分类号： G01R19/16519
摘要： The circuit configuration captures the load current of a field effect-controllable power semiconductor component. The drain and gate terminals of a further field effect-controllable semiconductor component are connected to the drain and gate terminals, respectively, of the first semiconductor component. A fraction of the load current flows through the further semiconductor component. The load current of the further semiconductor component is set as a function of the drain-to-source voltage of the two semiconductor components. The load current flowing through the further semiconductor component is compared with a reference current and an output signal is generated if the load current falls below a set value.
摘要翻译：电路配置捕获场效应可控功率半导体元件的负载电流。另外的场效应可控半导体元件的漏极和栅极端子分别连接到第一半导体部件的漏极和栅极端子。一部分负载电流流过另外的半导体元件。另外的半导体部件的负载电流被设定为两个半导体部件的漏极 - 源极电压的函数。将流过另外的半导体部件的负载电流与参考电流进行比较，并且如果负载电流低于设定值，则产生输出信号。

3. 发明授权

US5815027A Circuit configuration for detecting a load current of a power semiconductor component with a source-side load 失效
标题翻译：用于检测源极侧负载的功率半导体部件的负载电流的电路结构
公开(公告)号：US5815027A
公开(公告)日：1998-09-29
申请号：US660500
申请日：1996-06-07
申请人： Jenoe Tihanyi , Adam-Istvan Koroncai
发明人： Jenoe Tihanyi , Adam-Istvan Koroncai
IPC分类号： G01R1/20 , G01R19/00 , G05F1/10 , G05F3/24 , G01R19/165
CPC分类号： G05F3/24 , G01R1/203 , G01R19/0092 , H03K17/145 , H03K2217/0027
摘要： A field-effect-controllable power semiconductor component has a drain terminal, a source terminal, a gate terminal, a drain-to-source voltage and a load current. A circuit configuration for detecting the load current of the power semiconductor component includes a further field-effect-controllable semiconductor component through which a fraction of the load current flows. The further semiconductor component has a drain terminal connected to the drain terminal of the power semiconductor component, a gate terminal connected to the gate terminal of the power semiconductor component, a source terminal and a drain-to-source voltage. A resistor at which a voltage proportional to the load current can be picked up, is connected to a fixed potential terminal. A controllable resistor is connected between the resistor and the source terminal of the further semiconductor component. The controllable resistor adjusts the current of the further semiconductor component so that the drain-to-source voltages of the power semiconductor component and the further semiconductor component are equal to one another.
摘要翻译：场效应可控功率半导体元件具有漏极端子，源极端子，栅极端子，漏极 - 源极电压和负载电流。用于检测功率半导体部件的负载电流的电路结构包括另外的场效应可控半导体部件，一部分负载电流通过该半导体部件流动。另外的半导体部件具有连接到功率半导体部件的漏极端子的漏极端子，连接到功率半导体部件的栅极端子的栅极端子，源极端子和漏极到源极电压。可以拾取与负载电流成比例的电压的电阻器连接到固定电位端子。可控电阻器连接在电阻器和另一半导体部件的源极端子之间。可控电阻调节另外的半导体元件的电流，使得功率半导体元件和另外的半导体元件的漏 - 源电压彼此相等。

4. 发明授权

US4982306A Method of limiting starting current in a DC converter and device for performing the method 失效
标题翻译：限制DC转换器中的启动电流和执行该方法的装置的方法
公开(公告)号：US4982306A
公开(公告)日：1991-01-01
申请号：US247077
申请日：1988-09-20
申请人： Adam-Istvan Koroncai , Alexander Lechner
发明人： Adam-Istvan Koroncai , Alexander Lechner
IPC分类号： H02M3/00 , H02H9/00 , H02H9/02
CPC分类号： H02H9/001 , Y10S323/901 , Y10S323/908
摘要： In a method and device for limiting the starting current of a DC converter, at least one buffer capacitor is initially charged through a load resistor. The current going through the load resistor is measured with a monitor. The monitor switches on a DC converter and bridges the load resistor once a switching threshold is reached. A predetermined minimum current is used as the switching threshold.
摘要翻译：在用于限制DC转换器的启动电流的方法和装置中，至少一个缓冲电容器最初通过负载电阻器充电。通过负载电阻的电流用监视器测量。一旦达到切换阈值，监视器将打开直流转换器并桥接负载电阻。使用预定的最小电流作为切换阈值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式