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1. 发明授权

US06985384B2 Spacer integration scheme in MRAM technology 有权
标题翻译： MRAM技术中的间隔整合方案
公开(公告)号：US06985384B2
公开(公告)日：2006-01-10
申请号：US10261709
申请日：2002-10-01
申请人： Gregory Costrini , John Hummel , Kia-Seng Low , Igor Kasko , Frank Findeis , Wolfgang Raberg
发明人： Gregory Costrini , John Hummel , Kia-Seng Low , Igor Kasko , Frank Findeis , Wolfgang Raberg
IPC分类号： G11C11/18
CPC分类号： H01L43/12
摘要： A magneto resistive memory device is fabricated by etching a blanket metal stack comprised of a buffer layer, pinned magnetic layer, a tunnel barrier layer and a free magnetic layer. The problem of junction shorting from resputtered metal during the etching process is eliminated by formation of a protective spacer covering the side of the freelayer and tunnel barrier interface. The spacer is formed following the first etch through the free layer which stops on the barrier layer. After spacer formation a second etch is made to isolate the device. The patterning of the device tunnel junction is made using a disposable mandrel method that enables a self-aligned contact to be made following the completion of the device patterning process.
摘要翻译：通过蚀刻由缓冲层，钉扎磁性层，隧道势垒层和自由磁性层组成的覆盖金属堆叠来制造磁阻存储器件。通过形成覆盖自由层和隧道屏障界面侧面的保护性间隔物，消除了在蚀刻过程期间与溅射金属接合短路的问题。在通过在阻挡层上停止的自由层的第一次蚀刻之后形成间隔物。在间隔物形成之后，进行第二次蚀刻以隔离该装置。器件隧道结的图案化使用一次性心轴方法制造，其能够在器件图案化工艺完成之后进行自对准接触。

2. 发明申请

US20050277207A1 MASK SCHEMES FOR PATTERNING MAGNETIC TUNNEL JUNCTIONS 失效
标题翻译：用于绘制磁性隧道结的掩蔽方案
公开(公告)号：US20050277207A1
公开(公告)日：2005-12-15
申请号：US10868328
申请日：2004-06-15
申请人： Gregory Costrini , Frank Findeis , Gill Lee , Chanro Park
发明人： Gregory Costrini , Frank Findeis , Gill Lee , Chanro Park
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/22 , H01L43/12
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices that avoid shorting magnetic memory cells to upper levels of conductive lines during etching processes. One method involves using a hard mask having two material layers to pattern the lower magnetic material layers of an MTJ. The first material of the hard mask is thin and comprises an etch-resistant material. The second material of the hard mask deposited over the first material is thicker and is less etch-resistant than the first material. At least a portion of the second material is sacrificially removed during the etch process of the lower magnetic material layers. A conformal or non-conformal material may be used as the second material of the hard mask. The hard mask used to pattern lower magnetic materials of an MTJ may comprise a single layer of non-conformal material.
摘要翻译：磁记录装置的磁隧道结（MTJ）的图案化方法，可避免在刻蚀过程中将磁存储单元短路到上层的导线。一种方法包括使用具有两个材料层的硬掩模来图案化MTJ的下部磁性材料层。硬掩模的第一种材料是薄的并且包括耐蚀刻材料。沉积在第一材料上的硬掩模的第二材料比第一材料更厚并且耐蚀刻性更差。在下磁性材料层的蚀刻过程期间，至少部分第二材料被牺牲地去除。可以使用保形或非保形材料作为硬掩模的第二材料。用于图形MTJ的较低磁性材料的硬掩模可以包括单层非保形材料。

3. 发明授权

US07344896B2 Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof 有权
标题翻译：用于磁记忆单元导电线的铁磁衬垫及其制造方法
公开(公告)号：US07344896B2
公开(公告)日：2008-03-18
申请号：US10899488
申请日：2004-07-26
申请人： Rainer Leuschner , Wolfgang Raberg , Stephen L. Brown , Frank Findeis , Sivanandha K. Kanakasabapathy , Michael Vieth
发明人： Rainer Leuschner , Wolfgang Raberg , Stephen L. Brown , Frank Findeis , Sivanandha K. Kanakasabapathy , Michael Vieth
IPC分类号： H01L21/00
CPC分类号： G11C11/16 , H01L21/76844 , H01L21/76846 , H01L21/76849 , H01L21/76874 , H01L27/222
摘要： Methods of forming ferromagnetic liners on the top surface and sidewalls of conductive lines of magnetic memory devices. The ferromagnetic liners increase the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. In one embodiment, an in-bound pole is formed at the bottom edge of conductive lines, further concentrating the flux.
摘要翻译：在磁存储器件的导线的顶表面和侧壁上形成铁磁衬垫的方法。铁磁衬垫增加通过导线的电流的通量浓度，减少了切换磁存储单元所需的写入电流。在一个实施例中，在导线的底部边缘处形成入极，进一步集中焊剂。

4. 发明申请

US20060019487A1 Ferromagnetic liner for conductive lines of magnetic memory cells and methods of manufacturing thereof 有权
标题翻译：用于磁记忆单元导电线的铁磁衬垫及其制造方法
公开(公告)号：US20060019487A1
公开(公告)日：2006-01-26
申请号：US10899488
申请日：2004-07-26
申请人： Rainer Leuschner , Wolfgang Raberg , Stephen Brown , Frank Findeis , Sivanandha Kanakasabapathy , Michael Vieth
发明人： Rainer Leuschner , Wolfgang Raberg , Stephen Brown , Frank Findeis , Sivanandha Kanakasabapathy , Michael Vieth
IPC分类号： H01L21/4763
CPC分类号： G11C11/16 , H01L21/76844 , H01L21/76846 , H01L21/76849 , H01L21/76874 , H01L27/222
摘要： Methods of forming ferromagnetic liners on the top surface and sidewalls of conductive lines of magnetic memory devices. The ferromagnetic liners increase the flux concentration of current run through the conductive lines, reducing the amount of write current needed to switch magnetic memory cells. In one embodiment, an in-bound pole is formed at the bottom edge of conductive lines, further concentrating the flux.
摘要翻译：在磁存储器件的导线的顶表面和侧壁上形成铁磁衬垫的方法。铁磁衬垫增加通过导线的电流的通量浓度，减少了切换磁存储单元所需的写入电流。在一个实施例中，在导线的底部边缘处形成入极，进一步集中焊剂。

5. 发明授权

US07001783B2 Mask schemes for patterning magnetic tunnel junctions 失效
标题翻译：用于图案化磁隧道结的掩模方案
公开(公告)号：US07001783B2
公开(公告)日：2006-02-21
申请号：US10868328
申请日：2004-06-15
申请人： Gregory Costrini , Frank Findeis , Gill Yong Lee , Chanro Park
发明人： Gregory Costrini , Frank Findeis , Gill Yong Lee , Chanro Park
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices that avoid shorting magnetic memory cells to upper levels of conductive lines during etching processes. One method involves using a hard mask having two material layers to pattern the lower magnetic material layers of an MTJ. The first material of the hard mask is thin and comprises an etch-resistant material. The second material of the hard mask deposited over the first material is thicker and is less etch-resistant than the first material. At least a portion of the second material is sacrificially removed during the etch process of the lower magnetic material layers. A conformal or non-conformal material may be used as the second material of the hard mask. The hard mask used to pattern lower magnetic materials of an MTJ may comprise a single layer of non-conformal material.
摘要翻译：磁记录装置的磁隧道结（MTJ）的图案化方法，可避免在刻蚀过程中将磁存储单元短路到上层的导线。一种方法包括使用具有两个材料层的硬掩模来图案化MTJ的下部磁性材料层。硬掩模的第一种材料是薄的并且包括耐蚀刻材料。沉积在第一材料上的硬掩模的第二材料比第一材料更厚并且耐蚀刻性更差。在下磁性材料层的蚀刻过程期间，至少部分第二材料被牺牲地去除。可以使用保形或非保形材料作为硬掩模的第二材料。用于图形MTJ的较低磁性材料的硬掩模可以包括单层非保形材料。

6. 发明授权

US06812141B1 Recessed metal lines for protective enclosure in integrated circuits 失效
标题翻译：集成电路中用于保护外壳的嵌入式金属线
公开(公告)号：US06812141B1
公开(公告)日：2004-11-02
申请号：US10610609
申请日：2003-07-01
申请人： Michael C. Gaidis , Joachim Nuetzel , Walter Glashauser , Eugene O'Sullivan , Gregory Costrini , Stephen L. Brown , Frank Findeis , Chanro Park
发明人： Michael C. Gaidis , Joachim Nuetzel , Walter Glashauser , Eugene O'Sullivan , Gregory Costrini , Stephen L. Brown , Frank Findeis , Chanro Park
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76834 , H01L21/76849 , H01L21/76897 , H01L23/5226 , H01L23/53238 , H01L27/222 , H01L2924/0002 , H01L2924/00
摘要： Encapsulating areas of metallization in a liner material, such as Tantalum, Tantalum Nitride, Silicon Carbide allows aggressive or harsh processing steps to be used. These aggresive processing steps offer the possibility of fabricating new device architectures. In addition, by encapsulating the areas of metallization, metal ion migration and electromigration can be prevented. Further, the encapsulated areas of metallization can serve as a self-aligning etch mask. Thus, vias etched between adjacent areas of metallization allow the area of the substrate allocated to the via to be significantly reduced without increasing the possibility of electrical shorts to the adjacent areas of metallization.
摘要翻译：衬垫材料如钽，氮化钽，碳化硅中的金属化的封装区域允许使用侵蚀性或苛刻的加工步骤。这些突出的处理步骤提供了制造新器件架构的可能性。此外，通过封装金属化区域，可以防止金属离子迁移和电迁移。此外，金属化的封装区域可以用作自对准蚀刻掩模。因此，蚀刻在相邻的金属化区域之间的通孔允许分配给通孔的衬底的面积被显着地减小，而不增加相邻金属化区域的电短路的可能性。

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