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    • 1. 发明申请
    • Method for etching a patterned silicone layyer
    • 刻蚀图案硅胶层的方法
    • US20060286809A1
    • 2006-12-21
    • US10565036
    • 2003-07-28
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • H01L21/302
    • G03F7/0757G03F7/38G03F7/425
    • A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the nonexposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer, and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and a base.
    • 一种用于对半导体材料进行再加工的方法包括:(i)将硅氧烷组合物施加到基底的表面以形成膜,(ii)将膜的一部分暴露于辐射以产生具有覆盖一部分的非暴露区域的部分曝光的膜 表面的一部分和覆盖表面的其余部分的暴露区域; (iii)将部分暴露的膜加热一段时间,使得暴露区域基本上不溶于显影溶剂,并且未曝光区域可溶于显影溶剂中; (iv)用显影溶剂去除加热膜的未曝光区域以形成图案化膜; (v)加热所述图案化膜足以形成固化的硅氧烷层的时间量,以及(vi)通过暴露于包括有机溶剂和碱的无水蚀刻溶液中去除所有或部分固化的硅氧烷层。
    • 2. 发明授权
    • Method for forming and removing a patterned silicone film
    • 用于形成和去除图案化硅胶膜的方法
    • US07517808B2
    • 2009-04-14
    • US10565036
    • 2003-07-28
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • H01L21/469H01B13/00C03C15/00
    • G03F7/0757G03F7/38G03F7/425
    • A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer; and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and abase.
    • 一种用于对半导体材料进行再加工的方法包括:(i)将硅氧烷组合物施加到基底的表面以形成膜,(ii)将膜的一部分暴露于辐射以产生具有覆盖一部分的非暴露区域的部分曝光的膜 表面的一部分和覆盖表面的其余部分的暴露区域; (iii)将部分暴露的膜加热一段时间,使得暴露区域基本上不溶于显影溶剂,并且未曝光区域可溶于显影溶剂中; (iv)用显影溶剂去除加热膜的未曝光区域以形成图案化膜; (v)加热所述图案化膜足以形成固化的硅氧烷层的时间; 和(vi)通过暴露于包括有机溶剂和碱性的无水蚀刻溶液来除去固化的硅氧烷层的全部或一部分。
    • 9. 发明授权
    • Method of preparing a patterned film with a developing solvent
    • 用显影溶剂制备图案化膜的方法
    • US08227181B2
    • 2012-07-24
    • US12377246
    • 2007-08-08
    • Herman C. G. D. C. MeynenBrian Harkness
    • Herman C. G. D. C. MeynenBrian Harkness
    • G03F7/00G03F7/26G03F7/32G03F7/40
    • G03F7/0757G03F7/325Y10T428/24802
    • A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.
    • 在衬底上制备图案化膜的方法包括将硅氧烷组合物施加到衬底上以形成硅氧烷组合物的膜。 将一部分膜暴露于辐射以产生具有暴露区域和非暴露区域的部分曝光的膜。 将部分曝光的膜加热足够的时间和足够的温度以使包含硅氧烷组分的显影溶剂中的暴露区域基本上不溶解。 用显影溶剂去除部分曝光的膜的未曝光区域,以在衬底上露出无薄膜区域,并形成包含保留在衬底上的暴露区域的图案化膜。 由于显影溶剂中硅氧烷组分的存在,无膜区域基本上没有剩余的硅氧烷。