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    • 1. 发明授权
    • Method for forming and removing a patterned silicone film
    • 用于形成和去除图案化硅胶膜的方法
    • US07517808B2
    • 2009-04-14
    • US10565036
    • 2003-07-28
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • H01L21/469H01B13/00C03C15/00
    • G03F7/0757G03F7/38G03F7/425
    • A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer; and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and abase.
    • 一种用于对半导体材料进行再加工的方法包括:(i)将硅氧烷组合物施加到基底的表面以形成膜,(ii)将膜的一部分暴露于辐射以产生具有覆盖一部分的非暴露区域的部分曝光的膜 表面的一部分和覆盖表面的其余部分的暴露区域; (iii)将部分暴露的膜加热一段时间,使得暴露区域基本上不溶于显影溶剂,并且未曝光区域可溶于显影溶剂中; (iv)用显影溶剂去除加热膜的未曝光区域以形成图案化膜; (v)加热所述图案化膜足以形成固化的硅氧烷层的时间; 和(vi)通过暴露于包括有机溶剂和碱性的无水蚀刻溶液来除去固化的硅氧烷层的全部或一部分。
    • 3. 发明申请
    • Method for etching a patterned silicone layyer
    • 刻蚀图案硅胶层的方法
    • US20060286809A1
    • 2006-12-21
    • US10565036
    • 2003-07-28
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • Gregory BeckerGeoffrey GardnerBrian Harkness
    • H01L21/302
    • G03F7/0757G03F7/38G03F7/425
    • A method for reworking semiconductor materials includes: (i) applying a silicone composition to a surface of a substrate to form a film, (ii) exposing a portion of the film to radiation to produce a partially exposed film having non-exposed regions covering a portion of the surface and exposed regions covering the remainder of the surface; (iii) heating the partially exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non-exposed regions are soluble in the developing solvent; (iv) removing the nonexposed regions of the heated film with the developing solvent to form a patterned film; (v) heating the patterned film for an amount of time sufficient to form a cured silicone layer, and (vi) removing all or a portion of the cured silicone layer by exposure to an anhydrous etching solution including an organic solvent and a base.
    • 一种用于对半导体材料进行再加工的方法包括:(i)将硅氧烷组合物施加到基底的表面以形成膜,(ii)将膜的一部分暴露于辐射以产生具有覆盖一部分的非暴露区域的部分曝光的膜 表面的一部分和覆盖表面的其余部分的暴露区域; (iii)将部分暴露的膜加热一段时间,使得暴露区域基本上不溶于显影溶剂,并且未曝光区域可溶于显影溶剂中; (iv)用显影溶剂去除加热膜的未曝光区域以形成图案化膜; (v)加热所述图案化膜足以形成固化的硅氧烷层的时间量,以及(vi)通过暴露于包括有机溶剂和碱的无水蚀刻溶液中去除所有或部分固化的硅氧烷层。
    • 4. 发明申请
    • Method of preparing a planar optical waveguide assembly
    • 制备平面光波导组件的方法
    • US20050232557A1
    • 2005-10-20
    • US11098239
    • 2005-04-04
    • Geoffrey GardnerRandall Schmidt
    • Geoffrey GardnerRandall Schmidt
    • G03F7/075G02B1/04G02B6/12G02B6/13G02B6/138G02B6/44
    • G02B6/138G02B1/046G02B2006/12069C08L83/04
    • A method of preparing a planar optical waveguide assembly, comprising the steps of: (i) applying a silicone composition to a surface of a substrate to form a silicone film; (ii) exposing at least one selected region of the silicone film to radiation having a wavelength of from 150 to 800 nm to produce a partially exposed film having at least one exposed region and at least one non-exposed region; (iii) removing the non-exposed region of the partially exposed film with a developing solvent to form a patterned film; and (iv) heating the patterned film for an amount of time sufficient to form at least one silicone core having a refractive index of from 1.3 to 1.7 at 23° C. for light having a wavelength of 589 nm; wherein the substrate has a refractive index less than the refractive index of the silicone core.
    • 一种制备平面光波导组件的方法,包括以下步骤:(i)将硅氧烷组合物施加到基底的表面以形成硅酮膜; (ii)将硅氧烷膜的至少一个选定区域暴露于波长为150至800nm的辐射以产生具有至少一个曝光区域和至少一个未曝光区域的部分曝光的膜; (iii)用显影溶剂去除部分曝光的膜的未曝光区域以形成图案化膜; 和(iv)加热所述图案化膜足以在23℃下对波长为589nm的光形成折射率为1.3至1.7的至少一个硅氧烷芯的时间; 其中所述衬底具有小于所述硅氧烷芯的折射率的折射率。
    • 6. 发明申请
    • Planar optical waveguide assembly
    • 平面光波导组件
    • US20050175301A1
    • 2005-08-11
    • US11104814
    • 2005-04-13
    • Geoffrey GardnerRandall Schmidt
    • Geoffrey GardnerRandall Schmidt
    • G02B6/13C03C17/34G02B1/04G02B6/12G02B6/132G02B6/138G03F7/00G03F7/075G03F7/26
    • G03F7/001C03C17/3405G02B1/046G02B6/132G02B6/138G02B2006/12097G02B2006/121G03F7/0005G03F7/0757C08L83/04
    • A planar optical waveguide assembly prepared by a method comprising the steps of (i) applying a curable polymer composition to a surface of a substrate to form a polymer film; (ii) curing the polymer film to form a lower clad layer; (iii) applying a silicone composition to the lower clad layer to form a silicone film; (iv) exposing at least one selected region of the silicone film to radiation having a wavelength of from 150 to 800 nm to produce a partially exposed film having at least one exposed region and at least one non-exposed region; (v) removing the non-exposed region of the partially exposed film with a developing solvent to form a patterned film; and (vi) heating the patterned film for an amount of time sufficient to form at least one silicone core having a refractive index of from 1.3 to 1.7 at 23° C. for light having a wavelength of 589 nm; wherein the lower clad layer has a refractive index less than the refractive index of the silicone core.
    • 一种平面光波导组件,其通过包括以下步骤的方法制备:(i)将可固化聚合物组合物施加到基材的表面以形成聚合物膜; (ii)固化聚合物膜以形成下包层; (iii)将硅氧烷组合物施加到下包层以形成硅酮膜; (iv)将硅氧烷膜的至少一个选定区域暴露于波长为150至800nm的辐射以产生具有至少一个暴露区域和至少一个未曝光区域的部分曝光的膜; (v)用显影溶剂去除部分曝光的膜的未曝光区域以形成图案化膜; 和(vi)加热所述图案化膜足以在23℃下对波长为589nm的光形成至少一个具有1.3至1.7的折射率的硅氧烷芯的时间; 其中所述下包层具有小于所述硅芯的折射率的折射率。