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1. 发明申请

US20150301254A1 ELECTROMAGNETIC COMPOSITE-BASED REFLECTING TERAHERTZ WAVEPLATE 有权
标题翻译：基于电磁复合材料的反射TERAHERTZ波形
公开(公告)号：US20150301254A1
公开(公告)日：2015-10-22
申请号：US13566452
申请日：2012-08-03
申请人： Grace D. Metcalfe , Michael Wraback , Andrew Clare Strikwerda , Richard Douglas Averitt , Kebin Fan , Xin Zhang
发明人： Grace D. Metcalfe , Michael Wraback , Andrew Clare Strikwerda , Richard Douglas Averitt , Kebin Fan , Xin Zhang
IPC分类号： G02B5/30
CPC分类号： G02B5/3083 , G02B5/3066
摘要： A reflection-mode waveplate for operation in the terahertz region by shifting the phase between two perpendicular polarization components of the light wave, comprising a ground plane; an array of polygonal unit cells; the polygonal unit cells comprising a polymer positioned between the ground plane and the exterior of the array of polygonal patches.
摘要翻译：一种用于在太赫兹区域中操作的反射模式波片，其通过移动光波的两个垂直偏振分量之间的相位，包括接地平面; 一组多边形单元格; 所述多边形单位单元包括位于所述接地平面和所述多边形阵列阵列的外部之间的聚合物。

2. 发明授权

US09551820B2 Electromagnetic composite-based reflecting terahertz waveplate 有权
标题翻译：电磁复合反射太赫兹波片
公开(公告)号：US09551820B2
公开(公告)日：2017-01-24
申请号：US13566452
申请日：2012-08-03
申请人： Grace D. Metcalfe , Michael Wraback , Andrew Clare Strikwerda , Richard Douglas Averitt , Kebin Fan , Xin Zhang
发明人： Grace D. Metcalfe , Michael Wraback , Andrew Clare Strikwerda , Richard Douglas Averitt , Kebin Fan , Xin Zhang
IPC分类号： G02B5/30
CPC分类号： G02B5/3083 , G02B5/3066
摘要： A reflection-mode waveplate for operation in the terahertz region by shifting the phase between two perpendicular polarization components of the light wave, comprising a ground plane; an array of polygonal unit cells; the polygonal unit cells comprising a polymer positioned between the ground plane and the exterior of the array of polygonal patches.
摘要翻译：一种用于在太赫兹区域中操作的反射模式波片，其通过移动光波的两个垂直偏振分量之间的相位，包括接地平面; 一组多边形单元格; 所述多边形单位单元包括位于所述接地平面和所述多边形阵列阵列的外部之间的聚合物。

3. 发明授权

US07919764B2 Method and apparatus for enhanced terahertz radiation from high stacking fault density 有权
标题翻译：从高堆垛层错密度增加太赫兹辐射的方法和装置
公开(公告)号：US07919764B2
公开(公告)日：2011-04-05
申请号：US12435797
申请日：2009-05-05
申请人： Grace D. Metcalfe , Michael Wraback , Paul Shen
发明人： Grace D. Metcalfe , Michael Wraback , Paul Shen
IPC分类号： H01L33/04 , H01L33/28 , H01L33/32
CPC分类号： H01S1/02 , G02F2/004 , G02F2002/006 , G02F2203/13
摘要： A method and device for generating terahertz radiation comprising a polar crystal material layer operative to emit terahertz radiation; the polar crystal material layer comprising a plurality of stacking faults; the stacking faults lying substantially perpendicular to the polar axis and forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis; a pulsed radiation source for creating photogenerated carriers in the polar crystal material; whereby the photogenerated carriers accelerate in the internal electric fields associated with the termination of the internal electric polarization by the stacking faults to thereby generate terahertz radiation.
摘要翻译：一种用于产生太赫兹辐射的方法和装置，包括可操作地发射太赫兹辐射的极性晶体材料层; 所述极性晶体材料层包括多个堆垛层错; 所述堆垛层错基本上垂直于所述极轴并且形成所述内部电极化终止的边界，导致积聚在所述边界处的电荷，以及产生沿所述极轴定向的内部电场; 用于在极性晶体材料中产生光生载流子的脉冲辐射源; 由此，光生载流子通过堆垛层错加剧与内部电极化终止有关的内部电场，从而产生太赫兹辐射。

4. 发明授权

US08269200B2 Terahertz radiation device and method of generating terahertz radiation 有权
标题翻译：太赫兹辐射装置和产生太赫兹辐射的方法
公开(公告)号：US08269200B2
公开(公告)日：2012-09-18
申请号：US13042775
申请日：2011-03-08
申请人： Michael Wraback , Paul H Shen
发明人： Michael Wraback , Paul H Shen
IPC分类号： H01L33/04 , H01L33/28 , H01L33/32
CPC分类号： H01S1/02 , G02F2/004 , G02F2002/006 , G02F2203/13
摘要： A method and device for generating terahertz radiation comprising a substrate; a plurality of segments of polar crystal material formed on the substrate, the segments having an internal electric polarization; each segment comprising at least two edges oriented substantially perpendicular to the polar axis such that the electric polarization terminates at the edges and the segment comprises a majority of positive charges on one edge and a majority of negative charges on the opposite edge thereby leading to creation of an internal electric field; whereby when irradiated by a pulsed source of duration less than one picosecond, electron-hole pairs are generated within the segments and the internal electric field separates and accelerates the electron-hole pairs to thereby produce terahertz radiation.
摘要翻译：一种用于产生包括基板的太赫兹辐射的方法和装置; 形成在所述基板上的多个极性晶体材料段，所述段具有内部电极化; 每个部分包括至少两个边缘，其基本上垂直于极轴定向，使得电极化在边缘处终止，并且该部分包括在一个边缘上的大部分正电荷，并且在相对边缘上包括大部分负电荷，从而导致内部电场; 由此当由持续时间小于1皮秒的脉冲源照射时，在段内产生电子 - 空穴对，并且内部电场分离并加速电子 - 空穴对，从而产生太赫兹辐射。

5. 发明授权

US08203127B2 Terahertz radiation device using polar semiconductor materials and method of generating terahertz radiation 有权
标题翻译：使用极性半导体材料的太赫兹辐射装置和产生太赫兹辐射的方法
公开(公告)号：US08203127B2
公开(公告)日：2012-06-19
申请号：US13079097
申请日：2011-04-04
申请人： Michael Wraback , Paul H Shen
发明人： Michael Wraback , Paul H Shen
IPC分类号： H01L33/04 , H01L33/28 , H01L33/32
CPC分类号： G02F1/353 , G02F1/3551 , G02F2203/13
摘要： A method and device for generating terahertz radiation comprising a plurality of layers of polar crystal material operative to emit terahertz radiation; the plurality of layers comprising transport layers and divider layers, the plane of the layers being not parallel to the polar axis, the interface between the transport layers and divider layers forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis.
摘要翻译：一种用于产生太赫兹辐射的方法和装置，包括可操作地发射太赫兹辐射的多层极性晶体材料; 所述多个层包括传输层和分隔层，所述层的平面不平行于极轴，所述传输层和分隔层之间的界面形成内部电极化终止的边界，导致积聚在边界处的电荷，并创建沿极轴取向的内部电场。

6. 发明授权

US07348201B2 Creation of anisotropic strain in semiconductor quantum well 失效
标题翻译：在半导体量子阱中形成各向异性应变
公开(公告)号：US07348201B2
公开(公告)日：2008-03-25
申请号：US11051270
申请日：2005-02-03
申请人： Michael Wraback , Mitra Dutta , Paul Hongen Shen
发明人： Michael Wraback , Mitra Dutta , Paul Hongen Shen
IPC分类号： H01L21/20 , H01L29/15
CPC分类号： G02F1/01725 , B82Y20/00 , G02F2001/0157 , H01L21/02403 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L29/2003 , H01L29/205 , H01L33/06
摘要： Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then be deposited upon the quantum well structure. Thereafter, a second crystalline layer (e.g., a GaN layer) having a second crystalline phase and a thickness thereof can be formed upon the first crystalline layer to thereby induce an anisotropic strain in the quantum well structure to produce a quantum well device thereof. Additionally, the second crystalline layer (e.g., GaN) can be formed from a transparent material and utilized as an anti-reflection layer. By properly choosing the thickness of the second crystalline layer (e.g., a GaN layer), a desired anisotropic strain as well as a desired anti-reflection wavelength can be achieved.
摘要翻译：本文公开了在半导体量子阱结构中产生各向异性应变以诱发其各向异性的方法和装置。首先，提供衬底和形成在衬底上的量子阱结构。具有第一结晶相的第一晶体层（例如，GaAs层）可以沉积在量子阱结构上。此后，可以在第一结晶层上形成具有第二结晶相和其厚度的第二结晶层（例如，GaN层），从而在量子阱结构中引起各向异性应变以产生其量子阱器件。另外，第二晶体层（例如，GaN）可以由透明材料形成并用作抗反射层。通过适当地选择第二结晶层（例如，GaN层）的厚度，可以实现期望的各向异性应变以及期望的抗反射波长。

7. 发明授权

US5748359A Infrared/optical imaging techniques using anisotropically strained doped quantum well structures 失效
标题翻译：使用各向异性应变掺杂量子阱结构的红外/光学成像技术
公开(公告)号：US5748359A
公开(公告)日：1998-05-05
申请号：US754004
申请日：1996-11-21
申请人： Paul H. Shen , Mitra Dutta , Michael Wraback , Jagadeesh Pamulapati
发明人： Paul H. Shen , Mitra Dutta , Michael Wraback , Jagadeesh Pamulapati
IPC分类号： G02F1/017 , G02F1/03
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2001/01766 , G02F2203/07
摘要： An imaging system for transferring an infrared (IR) image to a visible image. The imaging system includes a polarization rotator that rotates the polarization of a visible light beam in response to absorptions of radiation from the IR image. A polarizer outputs components of the visible light beam as a function of the amount of absorbed radiation from the IR image. The polarization rotator is formed from a multiple quantum well structure grown on a semiconductor substrate with a thermally induced uniaxial, in-plane, compressive strain. The multiple quantum well structure includes a heterostructure of undoped barrier layers and doped quantum well layers. The strain causes the quantum well layers to have anisotropic radiation absorption characteristics. In particular, orthogonal components of the visible light parallel to and perpendicular to the strain will experience different degrees of absorption. The dopant in the quantum well layers is sufficient to bleach the lowest exciton resonances, thereby reducing absorption of the light beam. IR absorption from the image decreases the bleaching and increases the ability of the quantum well layers to promote exciton transitions. As such, the polarization of the light beam rotates as a function of the amount of IR absorbed from the image.
摘要翻译：一种用于将红外（IR）图像传送到可见图像的成像系统。成像系统包括响应于来自IR图像的辐射的吸收而旋转可见光束的偏振的偏振旋转器。偏振器作为来自IR图像的吸收辐射量的函数输出可见光束的分量。偏振旋转体由在半导体衬底上生长的多量子阱结构形成，其具有热诱导的单轴，面内压缩应变。多量子阱结构包括未掺杂势垒层和掺杂量子阱层的异质结构。该应变导致量子阱层具有各向异性的辐射吸收特性。特别地，平行于和垂直于应变的可见光的正交分量将经历不同程度的吸收。量子阱层中的掺杂剂足以漂白最低的激子共振，从而减少光束的吸收。来自图像的IR吸收减少漂白并增加量子阱层促进激子跃迁的能力。因此，光束的偏振作为从图像吸收的IR的量的函数旋转。

8. 发明授权

US08269222B2 Semiconductor photodetector with transparent interface charge control layer and method thereof 有权
标题翻译：具有透明界面电荷控制层的半导体光电探测器及其方法
公开(公告)号：US08269222B2
公开(公告)日：2012-09-18
申请号：US13114254
申请日：2011-05-24
申请人： Paul Shen , Michael Wraback , Anand V Sampath
发明人： Paul Shen , Michael Wraback , Anand V Sampath
IPC分类号： H01L29/15
CPC分类号： H01L31/03687 , H01L31/105 , H01L31/107 , H01L31/1812 , Y02E10/548
摘要： A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer formed of a first semiconductor material crystal lattice which terminates at an interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer substantially transparent to light in the predetermined wavelength range and having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge so as to increase the collection of photogenerated carriers by the photodetector. ; and a methodproviding the above.
摘要翻译：一种检测装置，包括光检测器，其包括第一半导体层，光首先通过该第一半导体层进入光电检测器; 所述第一半导体层由在形成第一界面电荷的界面处终止的第一半导体材料晶格形成; 第一半导体层是其中吸收预定波长范围的光子并产生光生载流子的吸收层; 以及沉积在第一半导体层的晶格上的第二极性半导体层，其对于预定波长范围内的光基本上是透明的，并且具有与第一半导体层不同的总偏振，使得在第一和第二半导体层之间的界面处引起第二界面电荷和第二半导体层; 感应的第二接口电荷减少或基本上抵消了第一接口电荷，从而增加光电检测器对光生载流子的收集。 ; 并提供上述方法。

9. 发明授权

US07956369B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07956369B2
公开(公告)日：2011-06-07
申请号：US12437170
申请日：2009-05-07
申请人： Meredith L. Reed , Michael Wraback , Paul Shen
发明人： Meredith L. Reed , Michael Wraback , Paul Shen
IPC分类号： H01L33/02
CPC分类号： H01L33/18 , H01L33/32
摘要： A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector that is larger than the first polarization vector; the n-type layer and p-type layer forming an interface. Another preferred embodiment light emitting device comprises a polar template; an n-type layer grown on the template; the n-type layer having a first polarization vector having a first projection relative to a growth direction; a p-type layer grown on the n-type layer having a second polarization vector that is larger than the first polarization vector. In both embodiments, the first polarization vector in the p-layer and second polarization vector in the n-layer create discontinuity at the interface resulting in a negative charge appearing at the interface.
摘要翻译：一种发光器件，包括：极性模板; 在其上生长的p型层; 所述p型层具有相对于生长方向具有第一突起的第一极化矢量; 在p型层上生长的n型层; 所述n型层具有大于所述第一极化矢量的第二极化矢量; n型层和p型层形成界面。另一个优选实施例的发光器件包括极性模板; 在模板上生长的n型层; 所述n型层具有相对于生长方向具有第一突起的第一极化矢量; 生长在具有大于第一偏振矢量的第二极化矢量的n型层上的p型层。在两个实施例中，n层中的p层和第二极化矢量中的第一极化矢量在界面处产生不连续，导致在界面处出现负电荷。

10. 发明授权

US07812366B1 Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same 有权
标题翻译：紫外线发光AlGaN组合物和含有其的紫外线发射装置
公开(公告)号：US07812366B1
公开(公告)日：2010-10-12
申请号：US11376453
申请日：2006-03-15
申请人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
发明人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
IPC分类号： H01L21/28
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
摘要： An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
摘要翻译：提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区能量小于周围材料。此外，提供了具有由上述AlGaN组合物构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。

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