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1. 发明授权

US07956369B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07956369B2
公开(公告)日：2011-06-07
申请号：US12437170
申请日：2009-05-07
申请人： Meredith L. Reed , Michael Wraback , Paul Shen
发明人： Meredith L. Reed , Michael Wraback , Paul Shen
IPC分类号： H01L33/02
CPC分类号： H01L33/18 , H01L33/32
摘要： A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector that is larger than the first polarization vector; the n-type layer and p-type layer forming an interface. Another preferred embodiment light emitting device comprises a polar template; an n-type layer grown on the template; the n-type layer having a first polarization vector having a first projection relative to a growth direction; a p-type layer grown on the n-type layer having a second polarization vector that is larger than the first polarization vector. In both embodiments, the first polarization vector in the p-layer and second polarization vector in the n-layer create discontinuity at the interface resulting in a negative charge appearing at the interface.
摘要翻译：一种发光器件，包括：极性模板; 在其上生长的p型层; 所述p型层具有相对于生长方向具有第一突起的第一极化矢量; 在p型层上生长的n型层; 所述n型层具有大于所述第一极化矢量的第二极化矢量; n型层和p型层形成界面。另一个优选实施例的发光器件包括极性模板; 在模板上生长的n型层; 所述n型层具有相对于生长方向具有第一突起的第一极化矢量; 生长在具有大于第一偏振矢量的第二极化矢量的n型层上的p型层。在两个实施例中，n层中的p层和第二极化矢量中的第一极化矢量在界面处产生不连续，导致在界面处出现负电荷。

2. 发明授权

US08564014B2 Ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same 有权
标题翻译：紫外发光AlGaN组合物和含有它的紫外线发射装置
公开(公告)号：US08564014B2
公开(公告)日：2013-10-22
申请号：US12834409
申请日：2010-07-12
申请人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
发明人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
摘要： An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
摘要翻译：提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区能量小于周围材料。此外，提供了具有由上述AlGaN组成构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。

3. 发明授权

US08269223B2 Polarization enhanced avalanche photodetector and method thereof 有权
标题翻译：极化增强雪崩光电探测器及其方法
公开(公告)号：US08269223B2
公开(公告)日：2012-09-18
申请号：US13116667
申请日：2011-05-26
申请人： Michael Wraback , Paul Shen , Anand V Sampath
发明人： Michael Wraback , Paul Shen , Anand V Sampath
IPC分类号： H01L29/15
CPC分类号： H01L31/1075 , H01L31/03048 , H01L31/0312 , Y02E10/544
摘要： An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the interface occurring abruptly at the atomic level; the interface charge creating electric field discontinuity causing first electric field to attain the breakdown field in the multiplication region and the second electric field to be low or zero in the absorption layer to thereby eliminate the need for a doped charge layer and the associated thickness of the doped charge layer required to transition from the low field to the high field. Also claimed is a method of making.
摘要翻译：一种雪崩光电探测器，包括由具有第一极化的第一材料形成的倍增层; 所述乘法层在施加偏置电压时具有第一电场; 由具有与所述乘法层形成界面的第二极化的第二材料形成的吸收层; 所述吸收层在施加所述偏置电压时具有第二电场，所述第二电场小于所述第一电场或基本为零，由吸收层吸收的光产生的载流子由于所述第一电场而被乘以所述乘法层领域; 所述吸收层具有大于或小于所述第一极化的第二极化，从而产生界面电荷; 当第一材料主要乘以孔时，界面电荷为正，当第一材料主要乘以电子时，界面电荷为负，界面处的电场在原子级突然发生变化; 所述接口电荷产生电场不连续性使得第一电场在所述乘法区域中获得击穿场，并且所述第二电场在所述吸收层中为低或零，从而消除对掺杂电荷层的需要和相关联的厚度掺杂电荷层需要从低场转换到高场。还要求保护的是一种制造方法。

4. 发明授权

US06476596B1 Method and apparatus for detection of terahertz electric fields using polarization-sensitive excitonic electroabsorption 失效
标题翻译：使用极化敏感激子电吸收检测太赫兹电场的方法和装置
公开(公告)号：US06476596B1
公开(公告)日：2002-11-05
申请号：US09459386
申请日：1999-12-06
申请人： Michael Wraback , Paul Shen , Mitra Dutta
发明人： Michael Wraback , Paul Shen , Mitra Dutta
IPC分类号： G01R3102
CPC分类号： B82Y20/00 , G01N21/3581 , H01L31/035236
摘要： A terahertz electromagnetic energy detector comprises a (100) oriented multiple quantum well thermally bonded to a first transparent substrate having a direction dependent thermal coefficient of expansion such that this coefficient matches the thermal coefficient of expansion of MQW in one direction but different form the direction-dependent thermal coefficient of expansion of the MQW in a perpendicular direction. The resultant internal thermally induced anisotropic strain leads to a polarization dependence of the optical absorption that is strongest near the lowest heavy-hole and light-hole exciton peaks. A second transparent substrate is placed beneath the first transparent substrate and is oriented so that its thermal coefficients of expansion act in a direction perpendicular to those of the first transparent substrate so that the accumulated phase retardation of the optical wave associated with birefringence of the substrate is effectively cancelled. A transverse electric and electromagnetic field is applied across the plane of the quantum well layers to ionize the excitons, which produces an anisotropic bleaching and concomitant line broadening of the anisotropic excitonic absorption. This phenomenon results in a polarization rotation of the transmitted optical field such that light passing through the device may be detected by a photosensitive polarization detector. The device is capable of effectively measuring the phase and frequency of terahertz energy over a wide bandwidth.
摘要翻译：太赫兹电磁能量检测器包括热粘合到具有方向依赖的热膨胀系数的第一透明衬底的（100）定向多量子阱，使得该系数与MQW在一个方向上的热膨胀系数匹配但不同，形成方向 - 依赖于MQW在垂直方向上的热膨胀系数。所得的内部热诱导各向异性应变导致在最低重孔和光空穴激子峰附近最强的光吸收的偏振依赖性。将第二透明基板放置在第一透明基板下方并且被定向成使得其热膨胀系数在垂直于第一透明基板的方向上起作用，使得与基板的双折射相关联的光波的累积相位延迟为有效取消。跨越量子阱层的平面上施加横向电场和电磁场，以使激子离子化，这产生各向异性漂白和各向异性激子吸收的伴随线宽。这种现象导致透射光场的偏振旋转，使得通过该器件的光可以由光敏极化检测器检测。该器件能够在宽带宽内有效测量太赫兹能量的相位和频率。

5. 发明授权

US08269222B2 Semiconductor photodetector with transparent interface charge control layer and method thereof 有权
标题翻译：具有透明界面电荷控制层的半导体光电探测器及其方法
公开(公告)号：US08269222B2
公开(公告)日：2012-09-18
申请号：US13114254
申请日：2011-05-24
申请人： Paul Shen , Michael Wraback , Anand V Sampath
发明人： Paul Shen , Michael Wraback , Anand V Sampath
IPC分类号： H01L29/15
CPC分类号： H01L31/03687 , H01L31/105 , H01L31/107 , H01L31/1812 , Y02E10/548
摘要： A detection device comprising a photodetector comprising a first semiconductor layer through which light first enters the photodetector; the first semiconductor layer formed of a first semiconductor material crystal lattice which terminates at an interface creating a first interface charge; the first semiconductor layer being an absorption layer in which photons in a predetermined wavelength range are absorbed and create photogenerated carriers; and a second polar semiconductor layer deposited on the crystal lattice of the first semiconductor layer substantially transparent to light in the predetermined wavelength range and having a total polarization different from the first semiconductor layer so that a second interface charge is induced at the interface between the first and second semiconductor layers; the induced second interface charge reduces or substantially cancels the first interface charge so as to increase the collection of photogenerated carriers by the photodetector. ; and a methodproviding the above.
摘要翻译：一种检测装置，包括光检测器，其包括第一半导体层，光首先通过该第一半导体层进入光电检测器; 所述第一半导体层由在形成第一界面电荷的界面处终止的第一半导体材料晶格形成; 第一半导体层是其中吸收预定波长范围的光子并产生光生载流子的吸收层; 以及沉积在第一半导体层的晶格上的第二极性半导体层，其对于预定波长范围内的光基本上是透明的，并且具有与第一半导体层不同的总偏振，使得在第一和第二半导体层之间的界面处引起第二界面电荷和第二半导体层; 感应的第二接口电荷减少或基本上抵消了第一接口电荷，从而增加光电检测器对光生载流子的收集。 ; 并提供上述方法。

6. 发明授权

US07919764B2 Method and apparatus for enhanced terahertz radiation from high stacking fault density 有权
标题翻译：从高堆垛层错密度增加太赫兹辐射的方法和装置
公开(公告)号：US07919764B2
公开(公告)日：2011-04-05
申请号：US12435797
申请日：2009-05-05
申请人： Grace D. Metcalfe , Michael Wraback , Paul Shen
发明人： Grace D. Metcalfe , Michael Wraback , Paul Shen
IPC分类号： H01L33/04 , H01L33/28 , H01L33/32
CPC分类号： H01S1/02 , G02F2/004 , G02F2002/006 , G02F2203/13
摘要： A method and device for generating terahertz radiation comprising a polar crystal material layer operative to emit terahertz radiation; the polar crystal material layer comprising a plurality of stacking faults; the stacking faults lying substantially perpendicular to the polar axis and forming boundaries at which the internal electric polarization terminates leading to charges accumulating at the boundaries, and creation of internal electric fields oriented along the polar axis; a pulsed radiation source for creating photogenerated carriers in the polar crystal material; whereby the photogenerated carriers accelerate in the internal electric fields associated with the termination of the internal electric polarization by the stacking faults to thereby generate terahertz radiation.
摘要翻译：一种用于产生太赫兹辐射的方法和装置，包括可操作地发射太赫兹辐射的极性晶体材料层; 所述极性晶体材料层包括多个堆垛层错; 所述堆垛层错基本上垂直于所述极轴并且形成所述内部电极化终止的边界，导致积聚在所述边界处的电荷，以及产生沿所述极轴定向的内部电场; 用于在极性晶体材料中产生光生载流子的脉冲辐射源; 由此，光生载流子通过堆垛层错加剧与内部电极化终止有关的内部电场，从而产生太赫兹辐射。

7. 发明授权

US07812366B1 Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same 有权
标题翻译：紫外线发光AlGaN组合物和含有其的紫外线发射装置
公开(公告)号：US07812366B1
公开(公告)日：2010-10-12
申请号：US11376453
申请日：2006-03-15
申请人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
发明人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
IPC分类号： H01L21/28
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
摘要： An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
摘要翻译：提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区能量小于周围材料。此外，提供了具有由上述AlGaN组合物构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。

8. 发明申请

US20100276710A1 Ultraviolet Light Emitting AlGaN Composition And Ultraviolet Light Emitting Device Containing Same 有权
标题翻译：紫外光发射AlGaN组成和含有它的紫外线发光装置
公开(公告)号：US20100276710A1
公开(公告)日：2010-11-04
申请号：US12834409
申请日：2010-07-12
申请人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
发明人： Anand Venktesh Sampath , Charles J. Collins , Gregory Alan Garrett , H. Paul Shen , Michael Wraback
IPC分类号： H01L33/30 , H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01S5/10 , H01S5/3209 , H01S5/34333
摘要： An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
摘要翻译：提供了一种AlGaN组合物，其包括III族氮化物有源区，用于UV发光器件的有源区，其中通过纳米级尺寸的载流子的辐射复合发生光产生，具有带隙的组成不均匀区能量小于周围材料。此外，提供了具有由上述AlGaN组合物构成的有源区域层的半导体UV发光元件，以及制造包含分子束外延的AlGaN组合物和半导体UV发光元件的方法。

9. 发明申请

US20060169970A1 Creation of anisotropic strain in semiconductor quantum well 失效
标题翻译：在半导体量子阱中形成各向异性应变
公开(公告)号：US20060169970A1
公开(公告)日：2006-08-03
申请号：US11051270
申请日：2005-02-03
申请人： Michael Wraback , Mitra Dutta , Paul Shen
发明人： Michael Wraback , Mitra Dutta , Paul Shen
IPC分类号： H01L31/109
CPC分类号： G02F1/01725 , B82Y20/00 , G02F2001/0157 , H01L21/02403 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L29/2003 , H01L29/205 , H01L33/06
摘要： Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then be deposited upon the quantum well structure. Thereafter, a second crystalline layer (e.g., a GaN layer) having a second crystalline phase and a thickness thereof can be formed upon the first crystalline layer to thereby induce an anisotropic strain in the quantum well structure to produce a quantum well device thereof. Additionally, the second crystalline layer (e.g., GaN) can be formed from a transparent material and utilized as an anti-reflection layer. By properly choosing the thickness of the second crystalline layer (e.g., a GaN layer), a desired anisotropic strain as well as a desired anti-reflection wavelength can be achieved.
摘要翻译：本文公开了在半导体量子阱结构中产生各向异性应变以诱发其各向异性的方法和装置。首先，提供衬底和形成在衬底上的量子阱结构。具有第一结晶相的第一晶体层（例如，GaAs层）可以沉积在量子阱结构上。此后，可以在第一结晶层上形成具有第二结晶相和其厚度的第二结晶层（例如，GaN层），从而在量子阱结构中引起各向异性应变以产生其量子阱器件。另外，第二晶体层（例如，GaN）可以由透明材料形成并用作抗反射层。通过适当地选择第二结晶层（例如，GaN层）的厚度，可以实现期望的各向异性应变以及期望的抗反射波长。

10. 发明授权

US08269200B2 Terahertz radiation device and method of generating terahertz radiation 有权
标题翻译：太赫兹辐射装置和产生太赫兹辐射的方法
公开(公告)号：US08269200B2
公开(公告)日：2012-09-18
申请号：US13042775
申请日：2011-03-08
申请人： Michael Wraback , Paul H Shen
发明人： Michael Wraback , Paul H Shen
IPC分类号： H01L33/04 , H01L33/28 , H01L33/32
CPC分类号： H01S1/02 , G02F2/004 , G02F2002/006 , G02F2203/13
摘要： A method and device for generating terahertz radiation comprising a substrate; a plurality of segments of polar crystal material formed on the substrate, the segments having an internal electric polarization; each segment comprising at least two edges oriented substantially perpendicular to the polar axis such that the electric polarization terminates at the edges and the segment comprises a majority of positive charges on one edge and a majority of negative charges on the opposite edge thereby leading to creation of an internal electric field; whereby when irradiated by a pulsed source of duration less than one picosecond, electron-hole pairs are generated within the segments and the internal electric field separates and accelerates the electron-hole pairs to thereby produce terahertz radiation.
摘要翻译：一种用于产生包括基板的太赫兹辐射的方法和装置; 形成在所述基板上的多个极性晶体材料段，所述段具有内部电极化; 每个部分包括至少两个边缘，其基本上垂直于极轴定向，使得电极化在边缘处终止，并且该部分包括在一个边缘上的大部分正电荷，并且在相对边缘上包括大部分负电荷，从而导致内部电场; 由此当由持续时间小于1皮秒的脉冲源照射时，在段内产生电子 - 空穴对，并且内部电场分离并加速电子 - 空穴对，从而产生太赫兹辐射。

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