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1. 发明授权

US06188808B1 Microwave system 失效
标题翻译：微波系统
公开(公告)号：US06188808B1
公开(公告)日：2001-02-13
申请号：US09315425
申请日：1999-05-20
申请人： Weimin Zhou , Paul H. Shen , Mitra Dutta , Jagadeesh Pamulapati
发明人： Weimin Zhou , Paul H. Shen , Mitra Dutta , Jagadeesh Pamulapati
IPC分类号： G02F1035
CPC分类号： G02B6/12004 , G02B2006/1215 , H01Q3/2676
摘要： An optical signal processor is implemented as a monolithically integrated semiconductor structure having optical waveguide devices forming beam splitters, optical amplifiers and optical phase shifters. The monolithic structure photonically controls a phased-array microwave antenna. Phase-locked master and slave lasers generate orthogonal light beams having a difference frequency that corresponds to the microwave carrier frequency of the phased-array antenna. The lasers feed the signal processor, which performs beam splitting, optical amplifying and phase shifting functions. A polarizer and an array of diode detectors convert optical output signals from the signal processor into microwave signals that feed the phased-array antenna. The optical waveguides of the signal processor are fabricated in a single selective epitaxial growth step on a semiconductor substrate.
摘要翻译：光信号处理器被实现为具有形成分束器，光放大器和光移相器的光波导器件的单片集成半导体结构。单片结构光子控制相控阵微波天线。锁相主激光器和从属激光器产生具有对应于相控阵天线的微波载波频率的差频的正交光束。激光器馈送信号处理器，其执行光束分离，光放大和相移功能。偏振器和二极管检测器阵列将来自信号处理器的光输出信号转换成馈入相控阵天线的微波信号。在半导体衬底上的单个选择性外延生长步骤中制造信号处理器的光波导。

2. 发明授权

US5953362A Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same 失效
标题翻译：应变诱导垂直腔表面发射激光器中极化状态的控制及其制作方法
公开(公告)号：US5953362A
公开(公告)日：1999-09-14
申请号：US990874
申请日：1997-12-15
申请人： Jagadeesh Pamulapati , Paul H. Shen
发明人： Jagadeesh Pamulapati , Paul H. Shen
IPC分类号： H01S5/02 , H01S5/183 , H01S5/32 , H01S5/42 , H01S3/08 , H01L21/20 , H01L33/00
CPC分类号： H01S5/18355 , B82Y20/00 , H01S5/0216 , H01S5/0217 , H01S5/18352 , H01S5/3201 , H01S5/3404
摘要： A vertical cavity surface emitting laser is formed by eutectically bonding a laser cavity, defined by an active layer disposed between first and second, stacked mirror assemblies, to a host substrate which has a predetermined anisotropic coefficient of thermal expansion. During the forming process, a uniaxial strain is induced within the laser cavity. With this arrangement, large arrays of vertical cavity surface emitting lasers can be formed with predetermined polarization states that are based on the selected anisotropic host substrate.
摘要翻译：垂直腔表面发射激光器通过将由设置在第一和第二堆叠反射镜组件之间的有源层限定的激光腔共晶地结合到具有预定的各向异性热膨胀系数的主体衬底而形成。在成形过程中，在激光腔内引起单轴应变。利用这种布置，可以形成具有基于所选择的各向异性主体衬底的预定极化状态的大阵列垂直腔表面发射激光器。

3. 发明授权

US5412225A Tunable heavy and light hole coupled bands in variable-strain quantum well semi-conductor heterostructure for novel opto-electronic devices 失效
标题翻译：用于新型光电子器件的可变应变量子阱半导体异质结构中可调谐的重和轻孔耦合带
公开(公告)号：US5412225A
公开(公告)日：1995-05-02
申请号：US199043
申请日：1994-02-18
申请人： Mitra Dutta , Weimin Zhou , Hongen Shen , Jagadeesh Pamulapati
发明人： Mitra Dutta , Weimin Zhou , Hongen Shen , Jagadeesh Pamulapati
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/00 , H01L27/14 , H01L31/00
CPC分类号： H01L31/0352 , B82Y20/00 , G02F1/01725 , G02F2001/01758 , G02F2001/01766
摘要： An opto-electronic semiconductor device including a variable strained layered quantum well structure having at least two superimposed heavy- and light-hole triangular bottom valance band quantum wells with mutually opposite slopes. Upon the application of a bias potential across a thickness dimension of the quantum wells, an electric field is generated therethrough which produces an interchange of the confined energy levels of heavy-holes and light-holes in the quantum wells which causes a change in the transmission characteristics of light passing through the device as a result of the heavy- and light-hole energy bands having different light absorption anisotropy.
摘要翻译：一种光电子半导体器件，包括具有相互相对的斜率的至少两个叠加的重和轻三角形底值带隙量子阱的可变应变分层量子阱结构。当在量子阱的厚度尺寸上施加偏置电位时，通过其产生电场，其产生量子阱中的重孔和光空洞的限定能级的交换，这导致传输的变化由于具有不同光吸收各向异性的重和光空穴能带的结果，通过该装置的光的特性。

4. 发明授权

US5930031A Monolithically integrated signal processing circuit having active and passive components 失效
标题翻译：具有主动和无源部件的单片集成信号处理电路
公开(公告)号：US5930031A
公开(公告)日：1999-07-27
申请号：US61358
申请日：1998-04-08
申请人： Weimin Zhou , Paul H. Shen , Mitra Dutta , Jagadeesh Pamulapati
发明人： Weimin Zhou , Paul H. Shen , Mitra Dutta , Jagadeesh Pamulapati
IPC分类号： G02B6/12 , H01Q3/26 , H01L21/70 , H01S3/18
CPC分类号： G02B6/12004 , H01Q3/2676 , G02B2006/1215
摘要： An optical signal processor is implemented as a monolithically integrated semiconductor structure having optical waveguide devices forming beam splitters, optical amplifiers and optical phase shifters. The monolithic structure photonically controls a phased-array microwave antenna. Phase-locked master and slave lasers generate orthogonal light beams having a difference frequency that corresponds to the microwave carrier frequency of the phased-array antenna. The lasers feed the signal processor, which performs beam splitting, optical amplifying and phase shifting functions. A polarizer and an array of diode detectors convert optical output signals from the signal processor into microwave signals that feed the phased-array antenna. The optical waveguides of the signal processor are fabricated in a single selective epitaxial growth step on a semiconductor substrate.
摘要翻译：光信号处理器被实现为具有形成分束器，光放大器和光移相器的光波导器件的单片集成半导体结构。单片结构光子控制相控阵微波天线。锁相主激光器和从属激光器产生具有对应于相控阵天线的微波载波频率的差频的正交光束。激光器馈送信号处理器，其执行光束分离，光放大和相移功能。偏振器和二极管检测器阵列将来自信号处理器的光输出信号转换成馈入相控阵天线的微波信号。在半导体衬底上的单个选择性外延生长步骤中制造信号处理器的光波导。

5. 发明授权

US5847435A Dynamic modulation of quantum devices 失效
标题翻译：量子器件的动态调制
公开(公告)号：US5847435A
公开(公告)日：1998-12-08
申请号：US695055
申请日：1996-08-09
申请人： Arthur Ballato , Richard H. Wittstruck , Yicheng Lu , Mitra Dutta , Jagadeesh Pamulapati , Paul H. Shen
发明人： Arthur Ballato , Richard H. Wittstruck , Yicheng Lu , Mitra Dutta , Jagadeesh Pamulapati , Paul H. Shen
IPC分类号： G02F1/01 , G02F1/017 , H01L29/82 , H01L29/06
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/0128
摘要： An MQW is fabricated such that at a particular level of purely mechanical ress/strain the optical properties of the MQW are altered by breaking the heavy and light hole degeneracy (splitting of the heavy and light holes in the valence band) of the MQW in the E-k domain. In a preferred embodiment of the invention ring electrical contacts are disposed on the MQW and the entire MQW structure, including electrical contacts is mounted on a piezoelectric substrate, with the proper crystallographic orientation and strain induced orientation, via an epoxy. In operation, a bias is applied to the MQW structure and the piezoelectric substrate. The bias causes quantum decoupling of the heavy and light holes; however, the bias also will cause the piezoelectric material to move, which will induce a strain on the MQW structure. This strain will, in turn, also induce a decoupling of the heavy and light holes, but to a greater degree than the decoupling induced by the electrical bias and therefore, the absorption of the MQW will altered, thereby polarizing optical signal incident to (or through) the device.
摘要翻译：制造MQW，使得在纯机械应力/应变的特定水平下，MQW的光学性质通过破坏MQW的重和轻空穴简并性（在价带中的重和光空穴的分裂）而改变 Ek域名。在本发明的优选实施例中，环形电触点设置在MQW上，并且包括电触点的整个MQW结构通过环氧树脂具有适当的晶体取向和应变诱导的取向安装在压电基板上。在工作中，向MQW结构和压电基片施加偏压。偏置导致重孔和光孔的量子解耦; 然而，偏压也将导致压电材料移动，这将在MQW结构上引起应变。这种应变又将引起重和光空穴的去耦，但是比由电偏压引起的去耦更大的程度，因此MQW的吸收将改变，从而使光信号入射到（或通过）设备。

6. 发明授权

US5748359A Infrared/optical imaging techniques using anisotropically strained doped quantum well structures 失效
标题翻译：使用各向异性应变掺杂量子阱结构的红外/光学成像技术
公开(公告)号：US5748359A
公开(公告)日：1998-05-05
申请号：US754004
申请日：1996-11-21
申请人： Paul H. Shen , Mitra Dutta , Michael Wraback , Jagadeesh Pamulapati
发明人： Paul H. Shen , Mitra Dutta , Michael Wraback , Jagadeesh Pamulapati
IPC分类号： G02F1/017 , G02F1/03
CPC分类号： B82Y20/00 , G02F1/01716 , G02F2001/01766 , G02F2203/07
摘要： An imaging system for transferring an infrared (IR) image to a visible image. The imaging system includes a polarization rotator that rotates the polarization of a visible light beam in response to absorptions of radiation from the IR image. A polarizer outputs components of the visible light beam as a function of the amount of absorbed radiation from the IR image. The polarization rotator is formed from a multiple quantum well structure grown on a semiconductor substrate with a thermally induced uniaxial, in-plane, compressive strain. The multiple quantum well structure includes a heterostructure of undoped barrier layers and doped quantum well layers. The strain causes the quantum well layers to have anisotropic radiation absorption characteristics. In particular, orthogonal components of the visible light parallel to and perpendicular to the strain will experience different degrees of absorption. The dopant in the quantum well layers is sufficient to bleach the lowest exciton resonances, thereby reducing absorption of the light beam. IR absorption from the image decreases the bleaching and increases the ability of the quantum well layers to promote exciton transitions. As such, the polarization of the light beam rotates as a function of the amount of IR absorbed from the image.
摘要翻译：一种用于将红外（IR）图像传送到可见图像的成像系统。成像系统包括响应于来自IR图像的辐射的吸收而旋转可见光束的偏振的偏振旋转器。偏振器作为来自IR图像的吸收辐射量的函数输出可见光束的分量。偏振旋转体由在半导体衬底上生长的多量子阱结构形成，其具有热诱导的单轴，面内压缩应变。多量子阱结构包括未掺杂势垒层和掺杂量子阱层的异质结构。该应变导致量子阱层具有各向异性的辐射吸收特性。特别地，平行于和垂直于应变的可见光的正交分量将经历不同程度的吸收。量子阱层中的掺杂剂足以漂白最低的激子共振，从而减少光束的吸收。来自图像的IR吸收减少漂白并增加量子阱层促进激子跃迁的能力。因此，光束的偏振作为从图像吸收的IR的量的函数旋转。

7. 发明授权

US5427648A Method of forming porous silicon 失效
标题翻译：形成多孔硅的方法
公开(公告)号：US5427648A
公开(公告)日：1995-06-27
申请号：US291790
申请日：1994-08-15
申请人： Jagadeesh Pamulapati , Hongen Shen , Mitra Dutta
发明人： Jagadeesh Pamulapati , Hongen Shen , Mitra Dutta
IPC分类号： H01L21/306 , H01L33/34 , H01L21/00
CPC分类号： H01L33/346 , H01L21/306
摘要： Porous silicon is formed by patterning a single crystal silicon substrate prior to electrochemically etching the same. The process is a controlled method of fabricating silicon microstructures which exhibit luminescence and are useful in optoelectronic devices, such as light emitting diodes. The porous silicon produced has a high degree of uniformity and repeatability.
摘要翻译：在对其进行电化学蚀刻之前，通过图案化单晶硅衬底来形成多孔硅。该方法是制造显微发光并可用于诸如发光二极管的光电子器件的硅微结构的受控方法。所生产的多孔硅具有高度的均匀性和重复性。

8. 发明授权

US5274247A Optic modulator with uniaxial stress 失效
标题翻译：单轴应力光调制器
公开(公告)号：US5274247A
公开(公告)日：1993-12-28
申请号：US888222
申请日：1992-05-21
申请人： Mitra Dutta , Hongen Shen , Jagadeesh Pamulapati
发明人： Mitra Dutta , Hongen Shen , Jagadeesh Pamulapati
IPC分类号： G02F1/017 , H01L27/14
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01708 , G02F2001/01766 , G02F2203/07
摘要： An optic modulator which employs strained multiple quantum well structures which are fabricated and spaced from one another such that the stress perpendicular to the direction of the spacing is released leaving only a uniaxial stress along the direction parallel to the spacing. The multiple quantum well structures are then sandwiched between two optic polarizers which are aligned perpendicular to one another. At zero electric field, polarized light passing from the first polarizer is further polarized such that the polarization of the light is rotated to pass through the second polarizer. When an electric field is applied across the heterostructure, light passing through the heterostructure is not further polarized and therefore, the optic signal is interrupted. Thus, optic signals may be modulated with the contrast of polarizing modulators at the speed of superlattice heterostructures.
摘要翻译：一种光学调制器，其采用应变多量子阱结构，其彼此制造和间隔开，使得垂直于间隔方向的应力被释放，沿着与间隔平行的方向仅留下单轴应力。然后将多个量子阱结构夹在彼此垂直排列的两个光学偏振器之间。在零电场下，从第一偏振器通过的偏振光被进一步偏振，使得光的偏振旋转以通过第二偏振器。当跨越异质结构施加电场时，穿过异质结构的光不会被进一步极化，因此光信号被中断。因此，可以以超晶格异质结构的速度用偏振调制器的对比度调制光信号。

9. 发明授权

US6075254A Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors 失效
标题翻译：偏振不敏感/独立的半导体波导调制器使用拉伸应力
公开(公告)号：US6075254A
公开(公告)日：2000-06-13
申请号：US047021
申请日：1998-03-24
申请人： Paul H. Shen , Jagadeesh Pamulapati , Mitra Dutta
发明人： Paul H. Shen , Jagadeesh Pamulapati , Mitra Dutta
IPC分类号： G02F1/017 , H01L29/205 , H01L31/0304
CPC分类号： B82Y20/00 , G02F1/017 , H01L29/205 , G02F1/01708 , G02F2001/01766 , G02F2203/06
摘要： A semiconductor waveguide modulator that is polarization insensitive/independent at bias variations for any chosen wavelength. The modulator of the present invention employs a novel type of strained semiconductor quantum well (QW) structure that exhibits bias independent, heavy-hole and light hole degeneracy. This effect is achieved by inserting one or two thin layers of highly tensile, strained materials in a specific position within the QW. By adjusting the thickness and the position of the highly tensile strained layers, the quantum confined Stark effect (QCSE) for the heavy hole and light hole can be engineered separately to control the bias dependent polarization properties. The present invention has applications, for example, in optoelectronic devices in the areas of telecommunications, optical signal processing, scanning and displays.
摘要翻译：一种半导体波导调制器，对于任何选定波长的偏置变化，其偏振不敏感/独立。本发明的调制器采用新型的应变半导体量子阱（QW）结构，其表现出偏置独立，重孔和光空间简并。这种效果是通过在QW内的特定位置插入一层或两层高度拉伸的应变材料来实现的。通过调整高拉伸应变层的厚度和位置，可以分别设计重孔和光孔的量子限制斯塔克效应（QCSE），以控制偏压相关偏振特性。本发明例如在电信，光信号处理，扫描和显示领域的光电子器件中具有应用。

10. 发明授权

US5770472A Method for making monolithically integrated signal processing circuit having active and passive components 失效
标题翻译：制造具有有源和无源元件的单片集成信号处理电路的方法
公开(公告)号：US5770472A
公开(公告)日：1998-06-23
申请号：US709997
申请日：1996-09-09
申请人： Weimin Zhou , Paul H. Shen , Mitra Dutta , Jagadeesh Pamulapati
发明人： Weimin Zhou , Paul H. Shen , Mitra Dutta , Jagadeesh Pamulapati
IPC分类号： G02B6/12 , H01Q3/26 , H01L21/00
CPC分类号： G02B6/12004 , H01Q3/2676 , G02B2006/1215
摘要： An optical signal processor is implemented as a monolithically integrated semiconductor structure having optical waveguide devices forming beam splitters, optical amplifiers and optical phase shifters. The monolithic structure photonically controls a phased-array microwave antenna. Phase-locked master and slave lasers generate orthogonal light beams having a difference frequency that corresponds to the microwave carrier frequency of the phased-array antenna. The lasers feed the signal processor, which performs beam splitting, optical amplifying and phase shifting functions. A polarizer and an array of diode detectors convert optical output signals from the signal processor into microwave signals that feed the phased-array antenna. The optical waveguides of the signal processor are fabricated in a single selective epitaxial growth step on a semiconductor substrate.
摘要翻译：光信号处理器被实现为具有形成分束器，光放大器和光移相器的光波导器件的单片集成半导体结构。单片结构光子控制相控阵微波天线。锁相主激光器和从属激光器产生具有对应于相控阵天线的微波载波频率的差频的正交光束。激光器馈送信号处理器，其执行光束分离，光放大和相移功能。偏振器和二极管检测器阵列将来自信号处理器的光输出信号转换成馈入相控阵天线的微波信号。在半导体衬底上的单个选择性外延生长步骤中制造信号处理器的光波导。

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