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1. 发明授权

US07064846B1 Non-lithographic shrink techniques for improving line edge roughness and using imperfect (but simpler) BARCs 有权
标题翻译：非光刻收缩技术，用于改善线边缘粗糙度并使用不完美（但更简单）的BARC
公开(公告)号：US07064846B1
公开(公告)日：2006-06-20
申请号：US10646190
申请日：2003-08-22
申请人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan , Ramkumar Subramanian
发明人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan , Ramkumar Subramanian
IPC分类号： G01B11/04
CPC分类号： G03F7/40
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate the reduction of line-edge roughness (LER) and/or standing wave expression during pattern line formation in an integrated circuit. Systems and methods are disclosed for retaining a target critical dimension (CD) of photoresist lines, comprising a non-lithographic shrink component that facilitates mitigating LER and/or standing wave expression, wherein the shrink component is employed to heat a particular resist to the glass transition temperature of the resist to effectuate mitigation of LER and/or standing wave expression. Additionally, by heating the resist to its glass transition temperature, the systems and methods of the present invention effectively impede deviation from a desired target critical dimension.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及有助于在集成电路中的图案线形成期间减少线边缘粗糙度（LER）和/或驻波表达的系统和方法。公开了用于保持光致抗蚀剂线的目标临界尺寸（CD）的系统和方法，其包括有助于减轻LER和/或驻波表达的非光刻收缩组分，其中采用收缩组分将特定抗蚀剂加热到玻璃抗蚀剂的转变温度来实现LER和/或驻波表达的缓解。此外，通过将抗蚀剂加热至其玻璃化转变温度，本发明的系统和方法有效地阻止了偏离所需目标临界尺寸。

2. 发明授权

US07056646B1 Use of base developers as immersion lithography fluid 有权
标题翻译：使用基底显影剂作为浸没光刻液
公开(公告)号：US07056646B1
公开(公告)日：2006-06-06
申请号：US10676749
申请日：2003-10-01
申请人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
发明人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
IPC分类号： G03F7/20
CPC分类号： G03F7/2041 , G03F7/322 , G03F7/70341
摘要： Disclosed are immersion lithography methods involving using a base developer as an immersion lithography fluid. Consequently, it is unnecessary to contact a developer with an irradiated resist after the immersion lithography fluid is removed.
摘要翻译：公开了涉及使用基底显影剂作为浸没光刻流体的浸没式光刻方法。因此，在浸没光刻液被去除之后，不需要将曝光的抗蚀剂接触显影剂。

3. 发明授权

US07159205B1 Use of non-lithographic shrink techniques for fabrication/making of imprints masks 失效
标题翻译：使用非光刻收缩技术制造/制作印记掩模
公开(公告)号：US07159205B1
公开(公告)日：2007-01-02
申请号：US10838830
申请日：2004-05-04
申请人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
发明人： Gilles Amblard , Bhanwar Singh , Khoi A. Phan
IPC分类号： G06F17/50
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/40
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate improved critical dimension (CD) control and the reduction of line-edge roughness (LER) during pattern line formation in an imprint mask. One aspect of the invention provides for forming features having CDs that are larger than ultimately desired in a mask resist. Upon application of a non-lithographic shrink technique, LER is mitigated and CD is reduced to within a desired target tolerance.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及在压印掩模中在图案线形成期间促进改进的临界尺寸（CD）控制和减少线边缘粗糙度（LER）的系统和方法。本发明的一个方面提供了形成具有大于掩模抗蚀剂中最终期望的CD的特征。在施加非光刻收缩技术时，LER被减轻并且CD被减小到期望的目标公差内。

4. 发明授权

US07262138B1 Organic BARC with adjustable etch rate 失效
标题翻译：有机BARC具有可调蚀刻速率
公开(公告)号：US07262138B1
公开(公告)日：2007-08-28
申请号：US10957111
申请日：2004-10-01
申请人： Bhanwar Singh , Ramkumar Subramanian , Gilles Amblard
发明人： Bhanwar Singh , Ramkumar Subramanian , Gilles Amblard
IPC分类号： H01L21/302
CPC分类号： H01L21/0276
摘要： Systems and method for adjusting an etch rate of an organic bottom antireflective coating (BARC) layer on a wafer. The BARC layer can be exposed to an energy source at varied intensities to determine a relationship between bake temperature and solubility of the BARC after baking, which correlates to a rate at which the BARC can be etched. The BARC can be a cross-linking BARC, which becomes more cross-linked as bake temperature is increased, resulting in decreased etch rate, or can be a cleaving BARC, which is subject to removal of etch-resistant monomers as bake temperature is increased, resulting in increased etch rate. Thus, the invention provides for adjustable BARC etch rates that can be aligned to an etch rate of a photoresist deposited over the BARC to permit concurrent etching of both layers while mitigating structural defects that can occur if etch rates of the respective layers differ.
摘要翻译：用于调整晶片上的有机底部抗反射涂层（BARC）层的蚀刻速率的系统和方法。 BARC层可以以不同的强度暴露于能量源，以确定烘烤温度和烘烤后BARC的溶解度之间的关系，这与BARC可被蚀刻的速率相关。 BARC可以是交联的BARC，其随着烘烤温度的升高而变得更加交联，导致蚀刻速率降低，或者可以是裂解BARC，其随着烘烤温度的升高而被去除耐蚀刻单体，导致蚀刻速率增加。因此，本发明提供可调节的BARC蚀刻速率，其可以与沉积在BARC上的光致抗蚀剂的蚀刻速率对准，以允许同时蚀刻两层，同时减轻如果各层的蚀刻速率不同时可能发生的结构缺陷。

5. 发明授权

US07799514B1 Surface treatment with an acidic composition to prevent substrate and environmental contamination 有权
标题翻译：用酸性组合物进行表面处理，以防止底物和环境污染
公开(公告)号：US07799514B1
公开(公告)日：2010-09-21
申请号：US10957367
申请日：2004-10-01
申请人： Ramkumar Subramanian , Bhanwar Singh , Gilles Amblard
发明人： Ramkumar Subramanian , Bhanwar Singh , Gilles Amblard
IPC分类号： G03F7/26
CPC分类号： G03F7/265
摘要： Disclosed are methods for eliminating and/or mitigating the formation of footing and/or T-tops in a resist pattern. A substrate with or without an antireflective coating layer may be treated with an acidic composition prior to the formation of a resist layer. The acid treatment prevents the loss of photo generated acid from the resist by either quenching and/or neutralizing the bases, and thereby reduces the formation of footing. The surface of a resist layer which has been irradiated may be treated with an acidic composition prior to post-exposure bake. The acid treatment prevents the loss of photo generated acid from the resist by either compensating for the evaporation and/or neutralization of the bases and thereby prevents the formation of T-tops.
摘要翻译：公开了用于消除和/或减轻抗蚀剂图案中的基脚和/或T形顶部的形成的方法。具有或不具有抗反射涂层的基底可以在形成抗蚀剂层之前用酸性组合物处理。酸处理通过淬灭和/或中和碱来防止光阻产生的酸的损失，从而减少基底的形成。已经照射的抗蚀剂层的表面可以在曝光前烘烤之前用酸性组合物处理。酸处理通过补偿基底的蒸发和/或中和来防止光致抗蚀剂产生的光的损失，从而防止形成T形顶部。

6. 发明授权

US07405032B1 Combination of non-lithographic shrink techniques and trim process for gate formation and line-edge roughness reduction 有权
标题翻译：非平版收缩技术和修剪过程的组合，用于栅极形成和线边缘粗糙度降低
公开(公告)号：US07405032B1
公开(公告)日：2008-07-29
申请号：US10645364
申请日：2003-08-21
申请人： Gilles Amblard , Srikanteswara Dakshina-Murthy , Bhanwar Singh
发明人： Gilles Amblard , Srikanteswara Dakshina-Murthy , Bhanwar Singh
IPC分类号： G01B11/30 , G01B11/00 , G03C5/00
CPC分类号： G01B11/30 , G03F7/40
摘要： The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate the reduction of line-edge roughness (LER) during gate formation in an integrated circuit.Systems and methods are disclosed for improving critical dimension (CD) of photoresist lines, comprising a non-lithographic shrink component that facilitates mitigating LER, and a trim etch component that facilitates achieving and/or restoring a target critical dimension.
摘要翻译：本发明一般涉及光刻系统和方法，更具体地涉及有助于在集成电路中形成栅极期间减少线边缘粗糙度（LER）的系统和方法。公开了用于改善光致抗蚀剂线的临界尺寸（CD）的系统和方法，其包括有助于减轻LER的非光刻收缩组分，以及有助于实现和/或恢复目标临界尺寸的修剪蚀刻部件。

7. 发明授权

US06764946B1 Method of controlling line edge roughness in resist films 失效
标题翻译：控制抗蚀膜中线边缘粗糙度的方法
公开(公告)号：US06764946B1
公开(公告)日：2004-07-20
申请号：US10676911
申请日：2003-10-01
申请人： Gilles Amblard
发明人： Gilles Amblard
IPC分类号： H01L214763
CPC分类号： H01L21/32139 , G03F7/40 , G03F7/405 , H01L21/0273 , Y10S438/947
摘要： Disclosed is a method of forming an integrated circuit line on a wafer using a lithographic technique. The method can include forming a photo resist line having a line width smaller than a desired line width of the integrated circuit line. The photo resist line can be reacted with a coating to form a mask line having a line width corresponding to the desired line width of the integrated circuit line and with a smaller line edge roughness (LER) than of the photo resist line.
摘要翻译：公开了使用光刻技术在晶片上形成集成电路线的方法。该方法可以包括形成线宽小于集成电路线的期望线宽的光致抗蚀剂线。光致抗蚀剂线可以与涂层反应形成具有与集成电路线的所需线宽对应的线宽并且具有比光致抗蚀剂线更小的线边缘粗糙度（LER）的掩模线。

8. 发明授权

US07704674B1 Method for patterning a photo-resist in an immersion lithography process 有权
标题翻译：在浸没式光刻工艺中图案化光刻胶的方法
公开(公告)号：US07704674B1
公开(公告)日：2010-04-27
申请号：US12347786
申请日：2008-12-31
申请人： Gilles Amblard , Rohit R. Rosario
发明人： Gilles Amblard , Rohit R. Rosario
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/38
摘要： A method for patterning a photo-resist in an immersion lithography process is described. The method includes forming a photo-resist layer above a substrate. A hydrophobic and contrast-enhancing barrier layer is formed above the photo-resist layer. The photo-resist layer is exposed, through the hydrophobic and contrast-enhancing barrier layer, to a light source. The photo-resist layer is developed to provide a patterned photo-resist layer.
摘要翻译：描述了在浸没式光刻工艺中图案化光刻胶的方法。该方法包括在基底上形成光致抗蚀剂层。在光致抗蚀剂层的上方形成疏水性和对比度增强的阻挡层。通过疏水和对比度增强的阻挡层将光致抗蚀剂层暴露于光源。显影光致抗蚀剂层以提供图案化的光致抗蚀剂层。

9. 发明申请

US20050048223A1 Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems 有权
标题翻译：浸没式光刻系统中浸没介质中气泡消除的方法和装置
公开(公告)号：US20050048223A1
公开(公告)日：2005-03-03
申请号：US10653844
申请日：2003-09-02
申请人： Adam Pawloski , Amr Abdo , Gilles Amblard , Bruno LaFontaine , Ivan Lalovic , Harry Levinson , Jeffrey Schefske , Cyrus Tabery , Frank Tsai
发明人： Adam Pawloski , Amr Abdo , Gilles Amblard , Bruno LaFontaine , Ivan Lalovic , Harry Levinson , Jeffrey Schefske , Cyrus Tabery , Frank Tsai
IPC分类号： G03F7/20 , B05D3/00
CPC分类号： G03F7/70341
摘要： A method of operating an immersion lithography system, including steps of immersing at least a portion of a wafer to be exposed in an immersion medium, wherein the immersion medium comprises at least one bubble; directing an ultrasonic wave through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system for an immersion lithography system.
摘要翻译：一种操作浸没式光刻系统的方法，包括将要曝光的晶片的至少一部分浸入浸没介质中的步骤，其中浸没介质包括至少一个气泡; 引导超声波穿过所述浸没介质的至少一部分以破坏和/或消散所述至少一个气泡; 以及在引导之后通过使电磁辐射穿过浸渍介质，以曝光图案曝光晶片。还公开了一种用于浸没式光刻系统的监视和控制系统。

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