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1. 发明授权

US06919214B2 Apparatus for analyzing a substrate employing a copper decoration 失效
标题翻译：用于分析使用铜装饰的基板的装置
公开(公告)号：US06919214B2
公开(公告)日：2005-07-19
申请号：US10688954
申请日：2003-10-21
申请人： Gi-Jung Kim , Kyoo-Chul Cho , Tae-Yeol Heo , Sook-Hyun Park
发明人： Gi-Jung Kim , Kyoo-Chul Cho , Tae-Yeol Heo , Sook-Hyun Park
IPC分类号： G01N33/00 , H01L21/66 , H01L21/00
CPC分类号： H01L22/24 , G01N2033/0095
摘要： An apparatus for analyzing a substrate employing a copper decoration includes a bath having at least two receiving containers for receiving electrolytes, slots formed at insides of the receiving containers for receiving substrates to be analyzed in a direction that is normal to a bottom face of the bath, lower copper plates provided in the receiving containers, the lower copper plates making contact with entire rear faces of the substrates received in the receiving containers, upper copper plates provided in the receiving containers, each of the upper copper plates corresponding to a respective one of the lower copper plates, and separated from front faces of the substrates, and a power source connected to the upper copper plates and the lower copper plates for providing voltages to the same. A plurality of substrates may be simultaneously analyzed using one apparatus thereby greatly reducing an amount of time required for the analysis.
摘要翻译：用于分析使用铜装饰的基板的装置包括具有至少两个用于接收电解质的接收容器的浴槽，在接收容器的内侧形成的槽，用于接收正常于浴底面的方向分析的基板设置在接收容器中的下铜板，与接收容器中容纳的基板的整个后表面接触的下铜板，设置在接收容器中的上铜板，每个上铜板对应于下铜板，并且与基板的前表面分离，以及连接到上铜板和下铜板的电源，用于向其提供电压。可以使用一个装置同时分析多个基板，从而大大减少了分析所需的时间量。

2. 发明申请

US20050016470A1 Susceptor and deposition apparatus including the same 审中-公开
标题翻译：受体和包括其的沉积装置
公开(公告)号：US20050016470A1
公开(公告)日：2005-01-27
申请号：US10898306
申请日：2004-07-26
申请人： Tae-Soo Kang , Soo-Yeol Choi , Kyoo-Chul Cho , Gi-Jung Kim , Jin-Ho Kim , Tae-Yeol Heo
发明人： Tae-Soo Kang , Soo-Yeol Choi , Kyoo-Chul Cho , Gi-Jung Kim , Jin-Ho Kim , Tae-Yeol Heo
IPC分类号： H01L21/205 , C23C16/00 , C23C16/458 , C30B25/12 , C30B31/14
CPC分类号： C23C16/4584 , C30B25/12 , C30B31/14
摘要： A susceptor for use in a deposition apparatus includes a recess in which a wafer is received, and a stress-reducing bumper disposed along the side of the recess. The stress-reducing bumper is of material having ductility at a relatively high temperature. Therefore, when the wafer contacts the stress-reducing bumper, such as may occur due to thermal expansion of the wafer during processing, the force of the impact on the wafer is minimized by an elastic deformation of the stress-reducing bumper. As a result, defects, such as slip dislocations at the outer peripheral edge of the wafer, are prevented.
摘要翻译：用于沉积设备的感受体包括其中容纳晶片的凹部和沿着凹部的侧面设置的减小应力的保险杠。减压保险杠是在较高温度下具有延性的材料。因此，当晶片接触减压保险杠时，例如由于晶片在加工过程中的热膨胀而可能发生的，通过减小应力的保险杠的弹性变形使得对晶片的冲击力最小化。结果，防止了晶片外周边缘处的滑移位错等缺陷。

3. 发明授权

US07372150B2 Semiconductor wafer having identification indication 失效
标题翻译：具有识别指示的半导体晶片
公开(公告)号：US07372150B2
公开(公告)日：2008-05-13
申请号：US10684343
申请日：2003-10-10
申请人： Sam-Jong Choi , Gi-Jung Kim , Kyoo-Chul Cho , Yeon-Sook Kim , Shin-Hyeok Han , Hoe-Sik Chung
发明人： Sam-Jong Choi , Gi-Jung Kim , Kyoo-Chul Cho , Yeon-Sook Kim , Shin-Hyeok Han , Hoe-Sik Chung
IPC分类号： H01L23/04
CPC分类号： H01L23/544 , H01L29/0657 , H01L2223/54406 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer including an identification indication is provided. The wafer includes a convex edge with an upper surface area and a lower surface area. The identification indication is in a marking region which is disposed on a lower side surface of the convex edge. The lower side surface has a wide region where the marking region is located. This wide region has a width that is wider than an upper side surface of the wafer and thus makes a cross-section of a side of the wafer asymmetrical. With the present invention, the entire top surface of the semiconductor wafer can be utilized for a semiconductor chip region and prevents manufacturing problems associated with the uneven nature of the identification indication when the identification is located on the top surface of the wafer.
摘要翻译：提供了包括识别指示的半导体晶片。晶片包括具有上表面区域和下表面区域的凸边缘。识别指示位于设置在凸缘的下侧表面上的标记区域中。下侧表面具有标记区域所在的宽区域。该宽区域的宽度比晶片的上侧面宽，因此晶片侧面的截面不对称。利用本发明，半导体晶片的整个顶表面可以用于半导体芯片区域，并且当识别位于晶片的顶表面上时，可防止与识别指示的不均匀性有关的制造问题。

4. 发明申请

US20070071893A1 Organic aluminum precursor and method of manufacturing a metal wiring using the same 失效
标题翻译：有机铝前体及其制造方法
公开(公告)号：US20070071893A1
公开(公告)日：2007-03-29
申请号：US11524295
申请日：2006-09-21
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
IPC分类号： C23C16/00 , C07F5/06
CPC分类号： C07F5/066 , C07F5/062 , C23C16/20
摘要： In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
摘要翻译：在制造金属布线的方法中，将包含铝作为中心金属的有机铝前体施加到基板上。施加到基材上的有机铝前体热分解形成铝。铝沉积在基板上以形成具有低电阻的铝布线。有机铝前体包括根据以下化学式之一的化学结构：其中R 1，R 2，R 3，R 3， R 4和R 5独立地是H或C 1 -C 5烷基官能团，n是整数 1至5，x为1或2，y为0或1，或其中R 1，R 2，R 3，R R 5，R 6，R 7和R 8独立地是H 或C 1 -C 5烷基官能团，Y是硼。

5. 发明申请

US20090035516A1 Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same 有权
标题翻译：有机金属前体，具有该薄膜的薄膜，包含该薄膜的金属布线，形成薄膜的方法及使用其制造金属布线的方法
公开(公告)号：US20090035516A1
公开(公告)日：2009-02-05
申请号：US12219983
申请日：2008-07-31
申请人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： B32B3/24 , C01B35/14 , B05D3/00 , C23C16/455 , C23C16/00 , B05D3/02 , B05D5/12
CPC分类号： C23C16/18 , C07F5/00 , C07F5/069 , C23C16/20 , Y10T428/24331
摘要： Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
摘要翻译：公开了可用于制造半导体器件的有机金属前体，具有该有机金属前体的薄膜，包括该薄膜的金属布线，薄膜形成方法以及金属布线的制造方法。包括用于降低有机金属前体极性的中心金属，硼氢化物配体和胺配体的有机金属前驱体可以提供到基底上，并且可以被热分解以在基底上形成薄膜。具有降低的极性的有机金属前体可以以恒定的流速提供给室，因此可以提高半导体制造工艺的稳定性和/或效率。

6. 发明授权

US07452569B2 Organic aluminum precursor and method of manufacturing a metal wiring using the same 失效
标题翻译：有机铝前体及其制造方法
公开(公告)号：US07452569B2
公开(公告)日：2008-11-18
申请号：US11524295
申请日：2006-09-21
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
IPC分类号： C23C16/00 , C23C16/06 , B05D7/22 , H05H1/24
CPC分类号： C07F5/066 , C07F5/062 , C23C16/20
摘要： In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
摘要翻译：在制造金属布线的方法中，将包含铝作为中心金属的有机铝前体施加到基板上。施加到基材上的有机铝前体热分解形成铝。铝沉积在基板上以形成具有低电阻的铝布线。有机铝前体包括根据以下化学式之一的化学结构：其中R 1，R 2，R 3，R 3， R 4和R 5独立地是H或C 1 -C 5烷基官能团，n是整数 1至5，x为1或2，y为0或1，或其中R 1，R 2，R 3，R R 5，R 6，R 7和R 8独立地是H 或C 1 -C 5烷基官能团，Y是硼。

7. 发明申请

US20090233439A1 Method of forming an ohmic layer and method of forming a metal wiring of a semiconductor device using the same 审中-公开
标题翻译：形成欧姆层的方法和使用该欧姆层的半导体器件的金属布线的形成方法
公开(公告)号：US20090233439A1
公开(公告)日：2009-09-17
申请号：US12382008
申请日：2009-03-05
申请人： Myung-Beom Park , Ki-Hag Lee , Hyun-Su Kim , Eun-Ok Lee , Kyoo-Chul Cho , Jung-Sik Choi , Byung-Hee Kim , Dae-Yong Kim
发明人： Myung-Beom Park , Ki-Hag Lee , Hyun-Su Kim , Eun-Ok Lee , Kyoo-Chul Cho , Jung-Sik Choi , Byung-Hee Kim , Dae-Yong Kim
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843
摘要： A metal organic precursor represented by a formula of R1-CpML is provided onto a substrate having a conductive pattern including silicon. Here, R1 is an alkyl group substituent of Cp, R1 including methyl, ethyl, propyl, pentamethyl, pentaethyl, diethyl, dimethyl or dipropyl, Cp is cyclopentadienyl, M includes nickel (Ni), cobalt (Co), titanium (Ti), platinum (Pt) zirconium (Zr) or ruthenium (Ru), and L is at least one ligand, the at least one ligand including a carbonyl. A deposition process is performed using the metal organic precursor to form a preliminary metal silicide layer and a metal layer on the substrate. The preliminary metal silicidation layer is formed on the conductive pattern. The preliminary metal silicide layer is transformed into a metal silicide layer.
摘要翻译：将由式R1-CpML表示的金属有机前体提供到具有包括硅的导电图案的基板上。这里，R1是Cp的烷基取代基，R1包括甲基，乙基，丙基，五甲基，五乙基，二乙基，二甲基或二丙基，Cp是环戊二烯基，M包括镍（Ni），钴（Co），钛（Ti）铂（Pt）锆（Zr）或钌（Ru），L是至少一种配体，所述至少一种配体包括羰基。使用金属有机前体进行沉积工艺，以在衬底上形成初步金属硅化物层和金属层。在导电图案上形成预备金属硅化层。将初级金属硅化物层转变成金属硅化物层。

8. 发明申请

US20080246077A1 Method of fabricating semiconductor memory device and semiconductor memory device fabricated by the method 审中-公开
标题翻译：通过该方法制造半导体存储器件和半导体存储器件的方法
公开(公告)号：US20080246077A1
公开(公告)日：2008-10-09
申请号：US12012592
申请日：2008-02-04
申请人： Young-Soo Park , Sam-Jong Choi , Kyoo-Chul Cho , Tae-Soo Kang
发明人： Young-Soo Park , Sam-Jong Choi , Kyoo-Chul Cho , Tae-Soo Kang
IPC分类号： H01L27/108 , H01L21/425
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/26506 , H01L29/40114 , H01L29/42332
摘要： In a method for fabricating a semiconductor memory device and a semiconductor memory device fabricated by the method, the method includes forming a multi-layered dielectric structure including a first dielectric layer with an ion implantation layer and a second dielectric layer without an ion implantation layer, over a semiconductor substrate; forming nanocrystals in the first and second dielectric layers by diffusing ions of the ion implantation layer by thermally treating the multi-layered dielectric structure; and forming a gate electrode on the multi-layered dielectric structure.
摘要翻译：在通过该方法制造半导体存储器件和半导体存储器件的方法中，该方法包括形成包括具有离子注入层的第一介电层和没有离子注入层的第二电介质层的多层电介质结构，在半导体衬底上; 通过热处理多层电介质结构，通过离子注入层的离子扩散来在第一和第二电介质层中形成纳米晶体; 以及在所述多层电介质结构上形成栅电极。

9. 发明申请

US20080213940A1 Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same 有权
标题翻译：形成金属氧化物层的方法，使用其形成栅极结构的方法以及使用其形成电容器的方法
公开(公告)号：US20080213940A1
公开(公告)日：2008-09-04
申请号：US11985672
申请日：2007-11-16
申请人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Jung-Ho Lee , Jun-Hyun Cho , Youn-Joung Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： C23C16/405 , C23C16/45553 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L21/3162 , H01L21/31641 , H01L21/31645
摘要： Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NR1R2)3R3, wherein M is a metal; R1 and R2 are each independently hydrogen or alkyl; and R3 is selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.
摘要翻译：本文提供形成金属氧化物层的方法，其包括向基板提供有机金属化合物和氧化剂以在基板上形成金属氧化物层。有机金属化合物可以具有通式M（NR 1，R 2）3 N 3 R 3，其中M 是金属; R 1和R 2各自独立地为氢或烷基; 和R 3选自烷基，环烷基，杂环烷基，芳基和杂芳基。

10. 发明申请

US20050259246A1 Apparatus for inspecting a surface and methods thereof 审中-公开
标题翻译：用于检查表面的装置及其方法
公开(公告)号：US20050259246A1
公开(公告)日：2005-11-24
申请号：US11133367
申请日：2005-05-20
申请人： Tae-Soo Kang , Kyoo-Chul Cho , Soo-Yeol Choi , Sam-Dong Choi
发明人： Tae-Soo Kang , Kyoo-Chul Cho , Soo-Yeol Choi , Sam-Dong Choi
IPC分类号： H01L21/66 , G01N21/47 , G01N21/88 , G01N21/95
CPC分类号： G01N21/47 , G01N21/9501
摘要： An apparatus and method for detecting a surface status. The method includes generating first and second pulse sequences and irradiating the first and second pulse sequences into a given surface. Light from the first and second pulses may be scattered by the given surface and analyzed to determine the status of the given surface. The apparatus includes a device for generating pulses which contact a given surface at different incident angles. The light scattered from the pulses may be analyzed at a determining part to determine a status of the given surface. In another embodiment, the method includes generating first and second pulse sequences and adjusting a path of at least a portion of at least one of the first and second pulse sequences such that the first and second pulse sequences are incident upon a given surface at different incident angles.
摘要翻译：一种用于检测表面状态的装置和方法。该方法包括产生第一和第二脉冲序列并将第一和第二脉冲序列照射到给定的表面中。来自第一和第二脉冲的光可以被给定的表面散射并且被分析以确定给定表面的状态。该装置包括用于产生以不同入射角接触给定表面的脉冲的装置。可以在确定部分分析从脉冲散射的光以确定给定表面的状态。在另一个实施例中，该方法包括产生第一和第二脉冲序列并且调整第一和第二脉冲序列中的至少一个的至少一部分的路径，使得第一和第二脉冲序列在不同事件处入射到给定表面上角度。

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