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1. 发明申请

US20050026396A1 Method of etching substrates 有权
标题翻译：蚀刻基板的方法
公开(公告)号：US20050026396A1
公开(公告)日：2005-02-03
申请号：US10928202
申请日：2004-08-30
申请人： Geun-young Yeom , Myung Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyoung-nam Kim , Dong-woo Kim
发明人： Geun-young Yeom , Myung Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyoung-nam Kim , Dong-woo Kim
IPC分类号： H01L21/3065 , G03F9/00 , H01B13/00 , H01L21/00 , H01L21/301 , H01L21/302 , H01L21/44 , H01L21/46 , H01L21/78 , H01L33/00
CPC分类号： C30B33/00 , C30B29/20 , H01L21/78 , H01L33/0095
摘要： Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.
摘要翻译：使用电感耦合等离子体反应离子蚀刻（ICP RIE）的薄化和切割基板。当切割时，通过光刻技术有利地在蓝宝石衬底或半导体外延层上形成限定划线的硬光电抗蚀剂图案或金属掩模图案。然后，沿着划线蚀刻衬底以形成蚀刻通道。使用由BCl 3和/或BCl 3 / Cl 2气体构成的蚀刻气体（可选地，可以加入Ar）。然后通过沿着蚀刻通道的衬底产生应力线。然后沿着应力线切割衬底。当薄化时，使用BCl 3和/或BCl 3 / Cl 2气体，可能具有一些Ar，对衬底的表面进行电感耦合等离子体反应离子蚀刻（ICP RIE）。 ICP RIE在使用蓝宝石和其他硬质基材时特别有用。

2. 发明授权

US06818532B2 Method of etching substrates 有权
标题翻译：蚀刻基板的方法
公开(公告)号：US06818532B2
公开(公告)日：2004-11-16
申请号：US10118318
申请日：2002-04-09
申请人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
发明人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
IPC分类号： H01L2146
CPC分类号： C30B33/00 , C30B29/20 , H01L21/78 , H01L33/0095
摘要： Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.
摘要翻译：使用电感耦合等离子体反应离子蚀刻（ICP RIE）的薄化和切割基板。当切割时，通过光刻技术有利地在蓝宝石衬底或半导体外延层上形成限定划线的硬光电抗蚀剂图案或金属掩模图案。然后，沿着划线蚀刻衬底以形成蚀刻通道。使用由BCl 3和/或BCl 3 / Cl 2气体构成的蚀刻气体（可选地，可以加入Ar）。然后通过沿着蚀刻通道的衬底产生应力线。然后沿着应力线切割衬底。当薄化时，使用BCl 3和/或BCl 3 / Cl 2气体，可能具有一些Ar，对衬底的表面进行电感耦合等离子体反应离子蚀刻（ICP RIE）。 ICP RIE在使用蓝宝石和其他硬质基材时特别有用。

3. 发明授权

US07012012B2 Method of etching substrates 有权
标题翻译：蚀刻基板的方法
公开(公告)号：US07012012B2
公开(公告)日：2006-03-14
申请号：US10928202
申请日：2004-08-30
申请人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
发明人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
IPC分类号： H01L21/46 , H01L21/302
CPC分类号： C30B33/00 , C30B29/20 , H01L21/78 , H01L33/0095
摘要： Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.
摘要翻译：使用电感耦合等离子体反应离子蚀刻（ICP RIE）的薄化和切割基板。当切割时，通过光刻技术有利地在蓝宝石衬底或半导体外延层上形成限定划线的硬光电抗蚀剂图案或金属掩模图案。然后，沿着划线蚀刻衬底以形成蚀刻通道。使用由BCl 3和/或BCl 3 / Cl 2气体组成的蚀刻气体（可选地，可以加入Ar）。然后通过沿着蚀刻通道的衬底产生应力线。然后沿着应力线切割衬底。当变薄时，使用BCl 3 3和/或BCl 3 / Cl 2将衬底的表面进行电感耦合等离子体反应离子蚀刻（ICP RIE） / SUB气体，可能有一些Ar。 ICP RIE在使用蓝宝石和其他硬质基材时特别有用。

4. 发明授权

US07094702B2 Layer-by-layer etching apparatus using neutral beam and method of etching using the same 有权
公开(公告)号：US07094702B2
公开(公告)日：2006-08-22
申请号：US10442566
申请日：2003-05-21
申请人： Geun-young Yeom , Min-jae Chung , Do-haing Lee , Sung-min Cho , Sae-hoon Chung
发明人： Geun-young Yeom , Min-jae Chung , Do-haing Lee , Sung-min Cho , Sae-hoon Chung
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01J2237/08
摘要： A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.

5. 发明申请

US20090203226A1 NEUTRAL BEAM-ASSISTED ATOMIC LAYER CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF PROCESSING SUBSTRATE USING THE SAME 有权
标题翻译：中性束辅助原子层化学蒸气沉积装置及使用其处理基板的方法
公开(公告)号：US20090203226A1
公开(公告)日：2009-08-13
申请号：US12031498
申请日：2008-02-14
申请人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
发明人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
IPC分类号： H01L21/316 , C23C16/44
CPC分类号： H01L21/3141 , C23C16/44 , C23C16/45536 , H01J2237/0041 , H01J2237/08 , H01J2237/3142 , H01L21/31604
摘要： A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.
摘要翻译：提供了一种中性束辅助原子层化学气相沉积（ALCVD）装置，用于均匀沉积填充平坦化层或沟槽的氧化物层，以增加氧化物层的均匀性和密度，使用由中性射束发生器产生的中性光束而无缝隙或发生在原子层沉积（ALD）或ALD样化学气相沉积（CVD））工艺中的空穴，从而解决当高密度平坦化层或具有宽度为形成65nm以下，并且改善下一代氧化物层隔离工艺。中性束辅助ALCVD装置包括：ALCVD装置，其沉积氧化物层以在半导体衬底中形成图案; 以及中性束发生器，其将离子束转换成中性光束，以便去除沉积在图案之间的氧化物层中的接缝或空隙，并将中性光束施加到沉积以形成图案的氧化物层。

6. 发明授权

US06874443B2 Layer-by-layer etching apparatus using neutral beam and etching method using the same 失效
标题翻译：使用中性光束的逐层蚀刻装置及使用其的蚀刻方法
公开(公告)号：US06874443B2
公开(公告)日：2005-04-05
申请号：US10086497
申请日：2002-02-28
申请人： Geun-young Yeom , Min-jae Chung , Do-haing Lee , Sung-min Cho , Sae-hoon Chung
发明人： Geun-young Yeom , Min-jae Chung , Do-haing Lee , Sung-min Cho , Sae-hoon Chung
IPC分类号： H01L21/3065 , C23F4/00 , C23C16/00 , C23F1/00
CPC分类号： C23F4/00 , H01J2237/08
摘要： A layer-by-layer etching apparatus and an etching method using a neutral beam which enables to control etching depth to an atomic level by controlling the etching of each atom of a material layer to be etched under precise control of the supply of an etching gas and irradiation of the neutral beam and enables to minimize etching damage. In the layer-by-layer etching method, a substrate to be etched, on which a layer to be etched is exposed, is loaded on a stage in a reaction chamber. An etching gas is supplied into the reaction chamber to adsorb the etching gas on the surface of an exposed portion of the layer to be etched. Excessive etching gas remaining after being adsorbed is removed. A neutral beam is irradiated on the layer to be etched on which the etching gas is adsorbed. Etch by-products generated by the irradiation of the neutral beam is removed.
摘要翻译：一种逐层蚀刻装置和使用中性光束的蚀刻方法，其能够通过在精确控制蚀刻气体的供给的精确控制下控制蚀刻材料层的每个原子的蚀刻，从而将蚀刻深度控制为原子水平并照射中性光束并且能够最小化蚀刻损伤。在逐层蚀刻方法中，将要蚀刻的层被蚀刻的基板暴露在反应室的台上。将蚀刻气体供应到反应室中，以将蚀刻气体吸附在被蚀刻层的暴露部分的表面上。吸附后残留的蚀刻气体过剩被去除。中性光束照射在被蚀刻的蚀刻气体被吸附的层上。除去由中性束的照射产生的副产物。

7. 发明授权

US07220601B2 Method of forming nano-sized MTJ cell without contact hole 有权
标题翻译：形成无接触孔的纳米尺寸MTJ电池的方法
公开(公告)号：US07220601B2
公开(公告)日：2007-05-22
申请号：US11033830
申请日：2005-01-13
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
摘要翻译：提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

8. 发明授权

US07799706B2 Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same 有权
标题翻译：中性束辅助原子层化学气相沉积装置及其处理方法
公开(公告)号：US07799706B2
公开(公告)日：2010-09-21
申请号：US12031498
申请日：2008-02-14
申请人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
发明人： Geun-young Yeom , Byoung-jae Park , Sung-woo Kim , Jong-tae Lim
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3141 , C23C16/44 , C23C16/45536 , H01J2237/0041 , H01J2237/08 , H01J2237/3142 , H01L21/31604
摘要： A neutral beam-assisted atomic layer chemical vapor deposition (ALCVD) apparatus is provided for uniformly depositing an oxide layer filling a planarization layer or a trench to increase uniformity and density of the oxide layer using neutral beams generated by a neutral beam generator without a seam or void occurring in an atomic layer deposition (ALD) or ALD-like chemical vapor deposition (CVD) process, thereby solving problems on the void or seam and low density occurring when a high-density planarization layer or a shallow trench having a width of 65 nm or less is formed, and improving a next generation oxide layer isolation process. The neutral beam-assisted ALCVD apparatus includes: an ALCVD apparatus, which deposits an oxide layer in order to form a pattern in a semiconductor substrate; and a neutral beam generator, which converts ion beams to neutral beams in order to remove a seam or void in the oxide layer deposited between the patterns, and applies the neutral beams to the oxide layer deposited to form the pattern.
摘要翻译：提供了一种中性束辅助原子层化学气相沉积（ALCVD）装置，用于均匀沉积填充平坦化层或沟槽的氧化物层，以增加氧化物层的均匀性和密度，使用由中性射束发生器产生的中性光束而无缝隙或发生在原子层沉积（ALD）或ALD样化学气相沉积（CVD））工艺中的空穴，从而解决当高密度平坦化层或具有宽度为形成65nm以下，并且改善下一代氧化物层隔离工艺。中性束辅助ALCVD装置包括：ALCVD装置，其沉积氧化物层以在半导体衬底中形成图案; 以及中性束发生器，其将离子束转换成中性光束，以便去除沉积在图案之间的氧化物层中的接缝或空隙，并将中性光束施加到沉积以形成图案的氧化物层。

9. 发明授权

US07397099B2 Method of forming nano-sized MTJ cell without contact hole 有权
标题翻译：形成无接触孔的纳米尺寸MTJ电池的方法
公开(公告)号：US07397099B2
公开(公告)日：2008-07-08
申请号：US11710475
申请日：2007-02-26
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.
摘要翻译：提供一种制造其中形成MTJ电池中的接触而不形成接触孔的纳米尺寸的MTJ电池的方法。形成MTJ单元的方法包括在基板上形成MTJ层，通过图案化MTJ层形成MTJ单元区域，在MTJ层上依次沉积绝缘层和掩模层，暴露MTJ单元区域的上表面通过以相同的蚀刻速率蚀刻掩模层和绝缘层，并在绝缘层和MTJ层上沉积金属层。

10. 发明申请

US20070164338A1 Method of forming nano-sized MTJ cell without contact hole 有权
公开(公告)号：US20070164338A1
公开(公告)日：2007-07-19
申请号：US11710475
申请日：2007-02-26
申请人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
发明人： Soon-won Hwang , I-hun Song , Geun-young Yeom , Seok-jae Chung
IPC分类号： H01L29/94
CPC分类号： H01L43/12 , G11C11/16
摘要： Provided is a method of manufacturing a nano-sized MTJ cell in which a contact in the MTJ cell is formed without forming a contact hole. The method of forming the MTJ cell includes forming an MTJ layer on a substrate, forming an MTJ cell region by patterning the MTJ layer, sequentially depositing an insulating layer and a mask layer on the MTJ layer, exposing an upper surface of the MTJ cell region by etching the mask layer and the insulating layer at the same etching rate, and depositing a metal layer on the insulating layer and the MTJ layer.

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