专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06818532B2 Method of etching substrates 有权
标题翻译：蚀刻基板的方法
公开(公告)号：US06818532B2
公开(公告)日：2004-11-16
申请号：US10118318
申请日：2002-04-09
申请人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
发明人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
IPC分类号： H01L2146
CPC分类号： C30B33/00 , C30B29/20 , H01L21/78 , H01L33/0095
摘要： Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.
摘要翻译：使用电感耦合等离子体反应离子蚀刻（ICP RIE）的薄化和切割基板。当切割时，通过光刻技术有利地在蓝宝石衬底或半导体外延层上形成限定划线的硬光电抗蚀剂图案或金属掩模图案。然后，沿着划线蚀刻衬底以形成蚀刻通道。使用由BCl 3和/或BCl 3 / Cl 2气体构成的蚀刻气体（可选地，可以加入Ar）。然后通过沿着蚀刻通道的衬底产生应力线。然后沿着应力线切割衬底。当薄化时，使用BCl 3和/或BCl 3 / Cl 2气体，可能具有一些Ar，对衬底的表面进行电感耦合等离子体反应离子蚀刻（ICP RIE）。 ICP RIE在使用蓝宝石和其他硬质基材时特别有用。

2. 发明授权

US08293069B2 Inductively coupled plasma apparatus 有权
标题翻译：电感耦合等离子体装置
公开(公告)号：US08293069B2
公开(公告)日：2012-10-23
申请号：US12331981
申请日：2008-12-10
申请人： Geun-Young Yeom , Kyong-Nam Kim , Seung-Jae Jung
发明人： Geun-Young Yeom , Kyong-Nam Kim , Seung-Jae Jung
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/321
摘要： A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.
摘要翻译：电感耦合等离子体装置包括其中装载有基板的反应室，以及包括分别水平布置以通过反应室内的反应室的第一线性天线和第二线性天线的双梳型天线结构。第一和第二线性天线彼此交替地对准。首先，第一线性天线从反应室突出并彼此耦合，以便耦合到第一感应RF功率，并且第二线性天线的第一端与第一线性天线相反地突出出反应室第一线性天线的端部并且彼此耦合，以便耦合到第二感应RF功率。等离子体均匀性得到改善，并且通过根据基板的尺寸调节天线之间的距离来维持优异的等离子体均匀性。

3. 发明申请

US20090173445A1 INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS HAVING INTERNAL LINEAR ANTENNA FOR LARGE ARE PROCESSING 有权
标题翻译：具有内部线性天线的电感耦合等离子体处理装置
公开(公告)号：US20090173445A1
公开(公告)日：2009-07-09
申请号：US12332927
申请日：2008-12-11
申请人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
发明人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
IPC分类号： C23F1/00
CPC分类号： H01J37/321
摘要： An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
摘要翻译：用于大面积处理的电感耦合等离子体处理装置包括反应室和弯曲型天线结构。弯曲型天线结构包括弯曲型线性天线。每个弯曲型线性天线具有第一端，第二端和弯曲部。弯曲型线状天线与基板水平配置，通过反应室内的反应室。弯曲型线性天线彼此间隔开。弯曲型线性天线的弯曲部分突出到反应室外，每个弯曲型线性天线的第一端从反应室突出并耦合到RF功率，并且每个的第二端弯曲型线性天线从反应室突出并耦合到地面。

4. 发明授权

US08974630B2 Inductively coupled plasma processing apparatus having internal linear antenna for large area processing 有权
标题翻译：具有用于大面积处理的内部线性天线的感应耦合等离子体处理装置
公开(公告)号：US08974630B2
公开(公告)日：2015-03-10
申请号：US12332927
申请日：2008-12-11
申请人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
发明人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
IPC分类号： H01L21/306 , C23C16/00 , H01J37/32
CPC分类号： H01J37/321
摘要： An inductively coupled plasma processing apparatus for a large area processing includes a reaction chamber and a bending type antenna structure. The bending type antenna structure includes bending type linear antennas. Each of the bending type linear antennas has a first end, a second end and a bended portion. The bending type linear antennas are arranged horizontally in parallel with the substrate to pass through the reaction chamber inside the reaction chamber. The bending type linear antennas are spaced apart from each other. A bended portion of a bending type linear antenna is protruded out of the reaction chamber, a first end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to an RF power, and a second end of each of the bending type linear antennas is protruded out of the reaction chamber and is coupled to a ground.
摘要翻译：用于大面积处理的电感耦合等离子体处理装置包括反应室和弯曲型天线结构。弯曲型天线结构包括弯曲型线性天线。每个弯曲型线性天线具有第一端，第二端和弯曲部。弯曲型线状天线与基板水平配置，通过反应室内的反应室。弯曲型线性天线彼此间隔开。弯曲型线性天线的弯曲部分突出到反应室外，每个弯曲型线性天线的第一端从反应室突出并耦合到RF功率，并且每个的第二端弯曲型线性天线从反应室突出并耦合到地面。

5. 发明申请

US20090133840A1 INDUCTIVELY COUPLED PLASMA APPARATUS 有权
标题翻译：电感耦合等离子体装置
公开(公告)号：US20090133840A1
公开(公告)日：2009-05-28
申请号：US12331981
申请日：2008-12-10
申请人： Geun-Young Yeom , Kyong-Nam Kim , Seung-Jae Jung
发明人： Geun-Young Yeom , Kyong-Nam Kim , Seung-Jae Jung
IPC分类号： C23F1/08
CPC分类号： H01J37/321
摘要： A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.
摘要翻译：电感耦合等离子体装置包括其中装载有基板的反应室，以及包括分别水平布置以通过反应室内的反应室的第一线性天线和第二线性天线的双梳型天线结构。第一和第二线性天线彼此交替地对准。首先，第一线性天线从反应室突出并彼此耦合，以便耦合到第一感应RF功率，并且第二线性天线的第一端与第一线性天线相反地突出出反应室第一线性天线的端部并且彼此耦合，以便耦合到第二感应RF功率。等离子体均匀性得到改善，并且通过根据基板的尺寸调节天线之间的距离来维持优异的等离子体均匀性。

6. 发明授权

US07012012B2 Method of etching substrates 有权
标题翻译：蚀刻基板的方法
公开(公告)号：US07012012B2
公开(公告)日：2006-03-14
申请号：US10928202
申请日：2004-08-30
申请人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
发明人： Geun-young Yeom , Myung cheol Yoo , Wolfram Urbanek , Youn-joon Sung , Chang-hyun Jeong , Kyong-nam Kim , Dong-woo Kim
IPC分类号： H01L21/46 , H01L21/302
CPC分类号： C30B33/00 , C30B29/20 , H01L21/78 , H01L33/0095
摘要： Thinning and dicing substrates using inductively coupled plasma reactive ion etching (ICP RIE). When dicing, a hard photo-resist pattern or metal mask pattern that defines scribe lines is formed on a sapphire substrate or on a semiconductor epitaxial layer, beneficially by lithographic techniques. Then, the substrate is etched along the scribe lines to form etched channels. An etching gas comprised of BCl3 and/or BCl3/Cl2 gas is used (optionally, Ar can be added). Stress lines are then produced through the substrate along the etched channels. The substrate is then diced along the stress lines. When thinning, a surface of a substrate is subjected to inductively coupled plasma reactive ion etching (ICP RIE) using BCl3 and/or BCl3/Cl2 gas, possibly with some Ar. ICP RIE is particularly useful when working sapphire and other hard substrates.
摘要翻译：使用电感耦合等离子体反应离子蚀刻（ICP RIE）的薄化和切割基板。当切割时，通过光刻技术有利地在蓝宝石衬底或半导体外延层上形成限定划线的硬光电抗蚀剂图案或金属掩模图案。然后，沿着划线蚀刻衬底以形成蚀刻通道。使用由BCl 3和/或BCl 3 / Cl 2气体组成的蚀刻气体（可选地，可以加入Ar）。然后通过沿着蚀刻通道的衬底产生应力线。然后沿着应力线切割衬底。当变薄时，使用BCl 3 3和/或BCl 3 / Cl 2将衬底的表面进行电感耦合等离子体反应离子蚀刻（ICP RIE） / SUB气体，可能有一些Ar。 ICP RIE在使用蓝宝石和其他硬质基材时特别有用。

7. 发明申请

US20050199186A1 Inductively coupled plasma apparatus using magnetic field 审中-公开
标题翻译：使用磁场的感应耦合等离子体装置
公开(公告)号：US20050199186A1
公开(公告)日：2005-09-15
申请号：US10914167
申请日：2004-08-10
申请人： Geun-Young Yeom , Kyong-nam Kim , Seung-jae Jung
发明人： Geun-Young Yeom , Kyong-nam Kim , Seung-jae Jung
IPC分类号： C23C16/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32669
摘要： Disclosed is an inductively coupled plasma apparatus using a magnetic field. The inductively coupled plasma apparatus comprises a reaction chamber in which a substrate is loaded, an antenna source installed in the reaction chamber and including first and second antennas having antenna rods, which are alternately aligned, and magnets installed above the antenna rods, wherein first sides of the first and second antennas are connected to a power source and second sides of the first and second antennas are grounded. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.
摘要翻译：公开了使用磁场的电感耦合等离子体装置。电感耦合等离子体装置包括反应室，其中装载有基板，安装在反应室中的天线源，并且包括交替对准的具有天线杆的第一和第二天线以及安装在天线杆上方的磁体，其中第一侧的第一和第二天线连接到电源，第一和第二天线的第二侧接地。等离子体均匀性得到改善，并且通过根据基板的尺寸调节天线之间的距离来维持优异的等离子体均匀性。

8. 发明授权

US07842159B2 Inductively coupled plasma processing apparatus for very large area using dual frequency 有权
标题翻译：电感耦合等离子体处理装置用于非常大的面积使用双频率
公开(公告)号：US07842159B2
公开(公告)日：2010-11-30
申请号：US11428681
申请日：2006-07-05
申请人： Geun-Young Yeom , Kyong-Nam Kim
发明人： Geun-Young Yeom , Kyong-Nam Kim
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/3266 , H01J37/321
摘要： A plasma processing apparatus for a very large area using a dual frequency is provided. The apparatus includes: a stage loading a substrate to be subjected to an etching or deposition process; a reaction chamber detachably coupled with the stage and having a plasma source region; a cover covering the reaction chamber; an assembly frame coupling the reaction chamber with the cover; first and second antenna sources disposed in the plasma source region, and having a plurality of antenna assemblies disposed in parallel, the plurality of antenna assemblies having a power supply connected to one side thereof and a ground connected to the other side thereof; and a plurality of magnet assemblies disposed on both sides of each antenna assembly, wherein the first and second antenna sources include m and m-1 antenna assemblies to which the same power is applied, respectively, and the antenna assemblies of the first antenna source and the antenna assemblies of the second antenna source are alternately disposed; and wherein input power applied to the first antenna source and input power applied to the second antenna source are different in magnitude and applied at the same time. Thereby, uniformity of plasma is improved to the maximum extent, so that it is possible to obtain a higher plasma density.
摘要翻译：提供了一种使用双频率的非常大面积的等离子体处理装置。该装置包括：加载待进行蚀刻或沉积工艺的基板的载物台; 反应室，其与所述载物台可拆卸地联接并具有等离子体源区; 覆盖反应室的盖子; 将反应室与盖连接的组装框架; 设置在等离子体源区域中的第一和第二天线源，并且具有并联设置的多个天线组件，所述多个天线组件具有连接到其一侧的电源和连接到其另一侧的接地; 以及设置在每个天线组件的两侧的多个磁体组件，其中所述第一和第二天线源分别包括施加相同功率的m和m-1个天线组件，并且所述第一天线源的天线组件和交替地设置第二天线源的天线组件; 并且其中施加到所述第一天线源的输入功率和施加到所述第二天线源的输入功率的大小不同并且同时施加。由此，等离子体的均匀性提高到最大程度，从而可以获得更高的等离子体密度。

9. 发明授权

US07338577B2 Inductively coupled plasma processing apparatus having internal linear antenna for large area processing 有权
标题翻译：具有用于大面积处理的内部线性天线的感应耦合等离子体处理装置
公开(公告)号：US07338577B2
公开(公告)日：2008-03-04
申请号：US10438221
申请日：2003-05-15
申请人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
发明人： Geun-Young Yeom , Young-Joon Lee , Kyong-Nam Kim
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321
摘要： An inductively coupled plasma processing apparatus for a large area processing, the inductively coupled plasma processing apparatus comprising: a reaction chamber; a plurality of linear antennas horizontally arranged at an inner upper portion of the reaction chamber while being spaced from each other by a predetermined distance for receiving induced RF power, the linear antennas being coupled to each other at an outer portion of the reaction chamber, the linear antennas including at least one bending antenna formed by connecting first ends of adjacent antennas, which are exposed to the outer portion of the reaction chamber, to each other; and at least one magnet positioned adjacent to the linear antennas for creating a magnetic field perpendicularly crossing an electric field created by the linear antennas in such a manner that electrons perform a spiral movement.
摘要翻译：一种用于大面积处理的电感耦合等离子体处理装置，所述电感耦合等离子体处理装置包括：反应室; 水平地布置在反应室的内部上部的多个线性天线，同时彼此隔开预定距离以接收感应RF功率，线性天线在反应室的外部彼此耦合，线性天线，其包括通过将暴露于反应室的外部的相邻天线的第一端连接而形成的至少一个弯曲天线; 以及邻近线性天线定位的至少一个磁体，用于产生垂直于由线性天线产生的电场的磁场，使得电子执行螺旋运动。

10. 发明申请

US20070012250A1 INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS FOR VERY LARGE AREA USING DUAL FREQUENCY 有权
标题翻译：使用双频的非常大的区域的感应耦合等离子体处理设备
公开(公告)号：US20070012250A1
公开(公告)日：2007-01-18
申请号：US11428681
申请日：2006-07-05
申请人： Geun-Young Yeom , Kyong-Nam Kim
发明人： Geun-Young Yeom , Kyong-Nam Kim
IPC分类号： C23C16/00
CPC分类号： H01J37/3266 , H01J37/321
摘要： A plasma processing apparatus for a very large area using a dual frequency is provided. The apparatus includes: a stage loading a substrate to be subjected to an etching or deposition process; a reaction chamber detachably coupled with the stage and having a plasma source region; a cover covering the reaction chamber; an assembly frame coupling the reaction chamber with the cover; first and second antenna sources disposed in the plasma source region, and having a plurality of antenna assemblies disposed in parallel, the plurality of antenna assemblies having a power supply connected to one side thereof and a ground connected to the other side thereof; and a plurality of magnet assemblies disposed on both sides of each antenna assembly, wherein the first and second antenna sources include m and m-1 antenna assemblies to which the same power is applied, respectively, and the antenna assemblies of the first antenna source and the antenna assemblies of the second antenna source are alternately disposed; and wherein input power applied to the first antenna source and input power applied to the second antenna source are different in magnitude and applied at the same time. Thereby, uniformity of plasma is improved to the maximum extent, so that it is possible to obtain a higher plasma density.
摘要翻译：提供了一种使用双频率的非常大面积的等离子体处理装置。该装置包括：加载待进行蚀刻或沉积工艺的基板的载物台; 反应室，其与所述载物台可拆卸地联接并具有等离子体源区; 覆盖反应室的盖子; 将反应室与盖连接的组装框架; 设置在等离子体源区域中的第一和第二天线源，并且具有并联设置的多个天线组件，所述多个天线组件具有连接到其一侧的电源和连接到其另一侧的接地; 以及设置在每个天线组件的两侧的多个磁体组件，其中所述第一和第二天线源分别包括施加相同功率的m和m-1个天线组件，并且所述第一天线源的天线组件和交替地设置第二天线源的天线组件; 并且其中施加到所述第一天线源的输入功率和施加到所述第二天线源的输入功率的大小不同并且同时施加。由此，等离子体的均匀性提高到最大程度，从而可以获得更高的等离子体密度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式