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1. 发明授权

US06630698B1 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06630698B1
公开(公告)日：2003-10-07
申请号：US09786022
申请日：2001-11-09
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semiconductor areas extend from at least one first zone (6) to near a second zone (1) and are variably doped so that the electric field increases progressively from one zone to the other (6, 1)
摘要翻译：本发明涉及一种高电压半导体元件，其包括以交替方式布置在半导体本体中的交替不同导电类型的半导体区域（4,5）。在半导体体中，所述半导体区域从至少一个第一区域（6）延伸到靠近第二区域（1）并且可变地掺杂，使得电场从一个区域逐渐增加到另一个区域（6,1）

2. 发明授权

US06828609B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06828609B2
公开(公告)日：2004-12-07
申请号：US10455834
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/7801 , H01L29/7802
摘要： A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.
摘要翻译：具有半导体主体的半导体部件包括阻挡pn结，第一导电类型的源极区域，并且与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接合，并且第一导电类型的漏极区域导电类型。第二导电类型的区域侧面对排水区，形成第一表面，并且在第一表面和第一和第二导电类型的第二表面区域之间的区域彼此嵌套。第一和第二导电类型的区域是可变地掺杂的，在第一表面附近，第二导电类型的掺杂原子占主导地位，并且在第二表面附近，第一导电类型的掺杂原子占主导地位。此外，提供了第一和第二导电类型的多个浮动区域。

3. 发明授权

US06894329B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06894329B2
公开(公告)日：2005-05-17
申请号：US10455839
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L21/336 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.
摘要翻译：半导体部件具有包含阻挡pn结的半导体主体，与第一电极连接并与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤的第一导电类型的源极区和漏极连接到第二电极的第一导电类型的区域。面向排水区的第二导电类型的区域的一侧形成第一表面，并且在位于第一表面和漏区之间的第一表面和第二表面之间的区域中，包括第一和第二导电类型的区域彼此嵌套在一起第二表面与面向源区的排水区的表面重合，使得彼此嵌套的第一和第二导电类型的区域到达排水区。

4. 发明授权

US06825514B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06825514B2
公开(公告)日：2004-11-30
申请号：US10455858
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/7801 , H01L29/7802
摘要： A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of: varying in individual semiconductor layers, by doping, the degree of compensation in the regions of the second conductivity type.
摘要翻译：一种用于制造半导体器件的方法，该半导体器件包括阻挡pn结，与第一电极连接并与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤的第一导电类型的源区，以及连接到第二电极的第一导电类型的漏极区，形成第一表面的第二导电类型的区域的侧面，并且在第一表面和位于第一表面之间的第二表面之间的区域中并且漏区，第一和第二导电类型的区域彼此嵌套，包括以下步骤：通过掺杂在各个半导体层中改变第二导电类型的区域中的补偿程度。

5. 发明授权

US06819089B2 Power factor correction circuit with high-voltage semiconductor component 有权
标题翻译：功率因数校正电路采用高压半导体元件
公开(公告)号：US06819089B2
公开(公告)日：2004-11-16
申请号：US10633044
申请日：2003-08-01
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L704
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7802 , H01L29/7825
摘要： A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.
摘要翻译：包括功率因数校正电路的开关电源包括整流器，与整流器串联耦合的电感器，由与整流器和电感器并联耦合的补偿器件形成的半导体开关。输出电路包括与与半导体开关并联耦合的电容器串联耦合的二极管。提供输入电流传感器和用于控制补偿装置的控制单元。

6. 发明授权

US06960798B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06960798B2
公开(公告)日：2005-11-01
申请号：US10455842
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L21/336 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.
摘要翻译：半导体部件具有包含阻挡pn结的半导体本体，与第一电极连接的第一导电类型的源区，与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤，第一导电类型的漏极区连接到第二电极。面向排水区的第二导电类型的区域的一侧形成第一表面，并且在位于第一表面和漏区之间的第一表面和第二表面之间的区域中，包括第一和第二导电类型的区域彼此嵌套在一起第二表面定位在离开排水区一定距离处，使得彼此嵌套的第一和第二导电类型的区域不会到达排水区。

7. 发明申请

US20080067626A1 METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE 审中-公开
标题翻译：用于制造TRENCH结构的方法和包括TRENCH结构的半导体布置
公开(公告)号：US20080067626A1
公开(公告)日：2008-03-20
申请号：US11834154
申请日：2007-08-06
申请人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
发明人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
IPC分类号： H01L29/94 , H01L21/76
CPC分类号： H01L21/76224 , H01L21/3247 , H01L29/0653 , H01L29/407 , H01L29/66621 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.
摘要翻译：一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。在表面上方和第一沟槽部分之上产生半导体层。在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

8. 发明授权

US08101997B2 Semiconductor device with a charge carrier compensation structure in a semiconductor body and method for its production 有权
标题翻译：具有半导体主体中的载流子补偿结构的半导体器件及其制造方法
公开(公告)号：US08101997B2
公开(公告)日：2012-01-24
申请号：US12111749
申请日：2008-04-29
申请人： Armin Willmeroth , Michael Rueb
发明人： Armin Willmeroth , Michael Rueb
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/7395
摘要： A semiconductor device with a charge carrier compensation structure in a semiconductor body and to a method for its production. The semiconductor body includes drift zones of a first conduction type and charge compensation zones of a second conduction type complementing the first conduction type. The drift zones include a semiconductor material applied in epitaxial growth zones, wherein the epitaxial growth zones include an epitaxially grown semiconductor material which is non-doped to lightly doped. Towards the substrate, the epitaxial growth zones are provided with a first conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of a second, complementary conduction type. Towards the front side, the epitaxial growth zones are provided with a second, complementary conduction type incorporated by ion implantation over the entire surface and with selectively introduced doping material zones of the first conduction type.
摘要翻译：在半导体本体中具有电荷载流子补偿结构的半导体器件及其制造方法。半导体本体包括第一导电类型的漂移区和补充第一导电类型的第二导电类型的电荷补偿区。漂移区包括施加在外延生长区中的半导体材料，其中外延生长区包括未掺杂以轻掺杂的外延生长的半导体材料。朝向衬底，外延生长区域被提供有在整个表面上通过离子注入并入的第一导电类型，并且选择性地引入第二互补导电类型的掺杂材料区域。朝向前侧，外延生长区设置有通过在整个表面上的离子注入并入并且选择性地引入第一导电类型的掺杂材料区的第二互补导电类型。

9. 发明授权

US07868396B2 Power semiconductor component with a drift zone and a high-dielectric compensation zone and method for producing a compensation zone 有权
标题翻译：具有漂移区和高介电补偿区的功率半导体元件和用于产生补偿区的方法
公开(公告)号：US07868396B2
公开(公告)日：2011-01-11
申请号：US11700555
申请日：2007-01-31
申请人： Michael Rueb , Franz Hirler
发明人： Michael Rueb , Franz Hirler
IPC分类号： H01L29/76
CPC分类号： H01L29/7802 , H01L29/0611 , H01L29/0615 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/6634 , H01L29/66727 , H01L29/7396 , H01L29/7813 , H01L29/7816 , H01L29/8083 , H01L29/872
摘要： A power semiconductor component includes a drift zone in a semiconductor body, a component junction and a compensation zone. The component junction is disposed between the drift zone and a further component zone, which is configured such that when a blocking voltage is applied to the component junction, a space charge zone forms extending generally in a first direction in the drift zone. The compensation zone is disposed adjacent to the drift zone in a second direction and includes at least one high-dielectric material having a temperature-dependent dielectric constant. The temperature dependence of the compensation zone varies in the second direction.
摘要翻译：功率半导体元件包括半导体本体中的漂移区，元件结和补偿区。元件结设置在漂移区和另一组件区之间，其被配置为使得当阻挡电压施加到元件结时，空间电荷区通常在漂移区中沿第一方向延伸。补偿区在第二方向上与漂移区相邻设置，并且包括至少一个具有温度依赖介电常数的高电介质材料。补偿区域的温度依赖性在第二个方向上变化。

10. 发明授权

US06756162B2 Stencil mask for high- and ultrahigh-energy implantation 失效
标题翻译：用于高能量和超高能量注入的模板掩模
公开(公告)号：US06756162B2
公开(公告)日：2004-06-29
申请号：US10135474
申请日：2002-04-30
申请人： Michael Rueb
发明人： Michael Rueb
IPC分类号： G03F900
CPC分类号： H01L21/266 , Y10T428/24273 , Y10T428/24322
摘要： A stencil mask for high- and ultrahigh-energy implantation of semiconductor wafers has a substrate with implantation openings through which the implantation energy can be projected onto a wafer that will be implanted. The critical dimension of the implantation openings is defined in a manner dependent on the respective implantation energy.
摘要翻译：用于半导体晶片的高能量和超高能量注入的模板掩模具有带有注入开口的衬底，通过该衬底将注入能量投射到待植入的晶片上。注入开口的临界尺寸取决于相应的注入能量来定义。

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