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1. 发明申请

US20080067626A1 METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE 审中-公开
标题翻译：用于制造TRENCH结构的方法和包括TRENCH结构的半导体布置
公开(公告)号：US20080067626A1
公开(公告)日：2008-03-20
申请号：US11834154
申请日：2007-08-06
申请人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
发明人： Franz Hirler , Thoralf Kautzsch , Anton Mauder , Michael Rueb , Hans-Joachim Schulze , Helmut Strack , Armin Willmeroth
IPC分类号： H01L29/94 , H01L21/76
CPC分类号： H01L21/76224 , H01L21/3247 , H01L29/0653 , H01L29/407 , H01L29/66621 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.
摘要翻译：一种半导体器件，其中制造从半导体本体的表面进入半导体本体的第一沟槽部分。在表面上方和第一沟槽部分之上产生半导体层。在半导体层中产生另一沟槽部分，使得第一沟槽部分和另外的沟槽部分形成连续的沟槽结构。

2. 发明授权

US07829940B2 Semiconductor component arrangement having a component with a drift zone and a drift control zone 有权
标题翻译：具有具有漂移区和偏移控制区的分量的半导体组件布置
公开(公告)号：US07829940B2
公开(公告)日：2010-11-09
申请号：US12163037
申请日：2008-06-27
申请人： Franz Hirler , Thoralf Kautzsch , Anton Mauder
发明人： Franz Hirler , Thoralf Kautzsch , Anton Mauder
IPC分类号： H01L29/732
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/407 , H01L29/41766 , H01L29/7397 , H01L29/7803 , H01L29/7804 , H03K2217/0036
摘要： Disclosed is a semiconductor including a component having a drift zone and a drift control zone. A first connection zone is adjacent to the drift zone and is doped more highly than the drift zone. A drift control zone is arranged adjacent to the drift zone and is coupled to the first connection zone. A drift control zone is dielectric arranged between the drift zone and the drift control zone. At least one rectifier element is arranged between the first connection zone and the drift control zone. A charging circuit is connected to the drift control zone.
摘要翻译：公开了一种包括具有漂移区和漂移控制区的分量的半导体。第一连接区域与漂移区相邻，并且掺杂比漂移区更高。漂移控制区被布置成与漂移区相邻并且耦合到第一连接区。漂移控制区是介于漂移区和漂移控制区之间的电介质。至少一个整流元件布置在第一连接区域和漂移控制区域之间。充电电路连接到漂移控制区。

3. 发明申请

US20090322417A1 SEMICONDUCTOR COMPONENT ARRANGEMENT HAVING A COMPONENT WITH A DRIFT ZONE AND A DRIFT CONTROL ZONE 有权
标题翻译：具有DRIFT区域和DRIFT控制区域的组件的半导体组件安装
公开(公告)号：US20090322417A1
公开(公告)日：2009-12-31
申请号：US12163037
申请日：2008-06-27
申请人： Franz Hirler , Thoralf Kautzsch , Anton Mauder
发明人： Franz Hirler , Thoralf Kautzsch , Anton Mauder
IPC分类号： G05F1/10
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/407 , H01L29/41766 , H01L29/7397 , H01L29/7803 , H01L29/7804 , H03K2217/0036
摘要： Disclosed is a semiconductor including a component having a drift zone and a drift control zone. A first connection zone is adjacent to the drift zone and is doped more highly than the drift zone. A drift control zone is arranged adjacent to the drift zone and is coupled to the first connection zone. A drift control zone is dielectric arranged between the drift zone and the drift control zone. At least one rectifier element is arranged between the first connection zone and the drift control zone. A charging circuit is connected to the drift control zone.
摘要翻译：公开了一种包括具有漂移区和漂移控制区的分量的半导体。第一连接区域与漂移区相邻，并且掺杂比漂移区更高。漂移控制区被布置成与漂移区相邻并且耦合到第一连接区。漂移控制区是介于漂移区和漂移控制区之间的电介质。至少一个整流元件布置在第一连接区域和漂移控制区域之间。充电电路连接到漂移控制区。

4. 发明授权

US08611705B2 Silicon optical switch devices 有权
标题翻译：硅光开关器件
公开(公告)号：US08611705B2
公开(公告)日：2013-12-17
申请号：US13286567
申请日：2011-11-01
申请人： Thoralf Kautzsch
发明人： Thoralf Kautzsch
IPC分类号： G02B6/26
CPC分类号： G02B26/02 , G02B6/3536 , G02B6/3552
摘要： Embodiments relate to optical switching devices. In embodiments, the optical switching devices are implemented in a silicon substrate and comprise an absorbent element selectively movable into and out of the evanescent field of a light beam which passes through a lamella. The absorbent element attenuates the evanescent part of the light beam such that the beam can be switched on and off by movement of the absorbent element.
摘要翻译：实施例涉及光开关装置。在实施例中，光学开关器件实现在硅衬底中，并且包括可选择性地移入和穿过通过薄片的光束的消逝场的吸收元件。吸收元件衰减光束的消逝部分，使得可以通过吸收元件的移动来接通和关闭光束。

5. 发明申请

US20130085710A1 METHOD FOR DETECTING WHEEL ROTATION USING A ONE-DIMENSIONAL ACCELERATION SENSOR 有权
标题翻译：使用一维加速度传感器检测车轮回转的方法
公开(公告)号：US20130085710A1
公开(公告)日：2013-04-04
申请号：US13249586
申请日：2011-09-30
申请人： Thoralf Kautzsch
发明人： Thoralf Kautzsch
IPC分类号： G06F15/00
CPC分类号： B60C23/0416 , B60C23/0488
摘要： Embodiments relate to TPMS utilizing a single-axis acceleration sensor for measuring the direction of rotation of the tires in a tire localization methodology. In an embodiment, the known axis position of the acceleration sensor in the tires allows for the assessment by an integrated circuit in order to determine the left or right positioning of a tire, as well as the magnitude of acceleration or deceleration. Because of the dual components of the measured acceleration signal of first, the directional acceleration of the vehicle and second, the oscillating modulation due to gravity, the generated waveform is known to have differences between the left and right tire signals of an accelerating and decelerating vehicle. The impact of the oscillating modulation on the directional acceleration of the vehicle can be utilized to identify tire rotation direction, and thus the wheels localized therefrom, as well as the magnitude of acceleration and deceleration.
摘要翻译：实施例涉及利用单轴加速度传感器在轮胎定位方法中测量轮胎的旋转方向的TPMS。在一个实施例中，轮胎中加速度传感器的已知轴位置允许通过集成电路进行评估，以便确定轮胎的左或右定位以及加速度或减速度的大小。由于首先测量的加速度信号的双重分量，车辆的方向加速度和第二，由重力引起的振荡调制，已知生成的波形在加速和减速车辆的左右轮胎信号之间具有差异。振荡调制对车辆方向加速度的影响可以用于识别轮胎旋转方向，从而确定轮子的转向方向，并且因此轮子的位置以及加速度和减速度的大小。

6. 发明申请

US20130001712A1 ACCELERATION SENSOR 有权
标题翻译：加速传感器
公开(公告)号：US20130001712A1
公开(公告)日：2013-01-03
申请号：US13612042
申请日：2012-09-12
申请人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
发明人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00182 , G01P15/0802
摘要： A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element.
摘要翻译：半导体器件包括半导体衬底和配置为响应于所施加的加速度而移动的半导体质量元件。质量元件由蚀刻到半导体衬底中的沟槽和质量元件下方的空腔限定。半导体器件包括感测元件，其被配置为感测质量元件的移动。

7. 发明申请

US20120267694A1 INTEGRATED CIRCUIT ARRANGEMENTS 有权
标题翻译：集成电路安排
公开(公告)号：US20120267694A1
公开(公告)日：2012-10-25
申请号：US13089379
申请日：2011-04-19
申请人： Dieter Kaiser , Dirk Meinhold , Thoralf Kautzsch , Georg Holfeld
发明人： Dieter Kaiser , Dirk Meinhold , Thoralf Kautzsch , Georg Holfeld
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L27/14621 , H01L27/1443 , H01L27/14614 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/02327
摘要： An integrated circuit arrangement is provided, including a transistor including a gate region; and a wavelength conversion element, wherein the wavelength conversion element may include the same material or same materials as the gate region of the transistor.
摘要翻译：提供一种集成电路装置，包括：包括栅极区域的晶体管; 以及波长转换元件，其中所述波长转换元件可以包括与所述晶体管的栅极区域相同的材料或相同的材料。

8. 发明授权

US08266962B2 Acceleration sensor 有权
标题翻译：加速度传感器
公开(公告)号：US08266962B2
公开(公告)日：2012-09-18
申请号：US12361212
申请日：2009-01-28
申请人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
发明人： Thoralf Kautzsch , Bernhard Winkler , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm , Boris Binder
IPC分类号： G01P15/125 , H01L29/84 , H01L21/02
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/00182 , G01P15/0802
摘要： A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate.
摘要翻译：半导体器件包括半导体衬底和配置为响应于所施加的加速度而移动的半导体质量元件。质量元件由蚀刻到半导体衬底中的沟槽和质量元件下方的空腔限定。半导体器件包括感测元件，其被配置为感测质量元件的移动和形成在衬底上的互补金属氧化物半导体（CMOS）电路。

9. 发明申请

US20100058876A1 SEMICONDUCTOR DEVICE INCLUDING A PRESSURE SENSOR 有权
标题翻译：包括压力传感器的半导体器件
公开(公告)号：US20100058876A1
公开(公告)日：2010-03-11
申请号：US12208897
申请日：2008-09-11
申请人： Thoralf Kautzsch , Boris Binder , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm
发明人： Thoralf Kautzsch , Boris Binder , Dirk Meinhold , Ben Rosam , Bernd Foeste , Andreas Thamm
IPC分类号： G01L9/00 , H01L21/304 , H01L21/311 , H01L21/306
CPC分类号： G01L9/0098 , G01L9/0052 , G01L9/0073 , G01L13/025 , G01L15/00
摘要： A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.
摘要翻译：半导体器件包括半导体衬底内的第一腔和半导体衬底内的第二腔。第二腔向大气开放，并且在第一腔和第二腔之间限定第一薄片。半导体器件包括被配置为感测第一薄片上的压力的第一感测元件。

10. 发明授权

US10205032B2 Semiconductor structure and method for making same 有权
公开(公告)号：US10205032B2
公开(公告)日：2019-02-12
申请号：US12885704
申请日：2010-09-20
申请人： Thoralf Kautzsch
发明人： Thoralf Kautzsch
IPC分类号： H01L21/74 , H01L29/66 , H01L29/94
摘要： One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a semiconductor substrate; forming an opening within the substrate; forming a conductive layer within the opening; and forming a semiconductor layer over the conductive layer.

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