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1. 发明授权

US06894329B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06894329B2
公开(公告)日：2005-05-17
申请号：US10455839
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L21/336 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.
摘要翻译：半导体部件具有包含阻挡pn结的半导体主体，与第一电极连接并与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤的第一导电类型的源极区和漏极连接到第二电极的第一导电类型的区域。面向排水区的第二导电类型的区域的一侧形成第一表面，并且在位于第一表面和漏区之间的第一表面和第二表面之间的区域中，包括第一和第二导电类型的区域彼此嵌套在一起第二表面与面向源区的排水区的表面重合，使得彼此嵌套的第一和第二导电类型的区域到达排水区。

2. 发明授权

US06825514B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06825514B2
公开(公告)日：2004-11-30
申请号：US10455858
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/7801 , H01L29/7802
摘要： A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of: varying in individual semiconductor layers, by doping, the degree of compensation in the regions of the second conductivity type.
摘要翻译：一种用于制造半导体器件的方法，该半导体器件包括阻挡pn结，与第一电极连接并与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤的第一导电类型的源区，以及连接到第二电极的第一导电类型的漏极区，形成第一表面的第二导电类型的区域的侧面，并且在第一表面和位于第一表面之间的第二表面之间的区域中并且漏区，第一和第二导电类型的区域彼此嵌套，包括以下步骤：通过掺杂在各个半导体层中改变第二导电类型的区域中的补偿程度。

3. 发明授权

US06819089B2 Power factor correction circuit with high-voltage semiconductor component 有权
标题翻译：功率因数校正电路采用高压半导体元件
公开(公告)号：US06819089B2
公开(公告)日：2004-11-16
申请号：US10633044
申请日：2003-08-01
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L704
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7802 , H01L29/7825
摘要： A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.
摘要翻译：包括功率因数校正电路的开关电源包括整流器，与整流器串联耦合的电感器，由与整流器和电感器并联耦合的补偿器件形成的半导体开关。输出电路包括与与半导体开关并联耦合的电容器串联耦合的二极管。提供输入电流传感器和用于控制补偿装置的控制单元。

4. 发明授权

US06828609B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06828609B2
公开(公告)日：2004-12-07
申请号：US10455834
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/41766 , H01L29/4232 , H01L29/4238 , H01L29/7801 , H01L29/7802
摘要： A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.
摘要翻译：具有半导体主体的半导体部件包括阻挡pn结，第一导电类型的源极区域，并且与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接合，并且第一导电类型的漏极区域导电类型。第二导电类型的区域侧面对排水区，形成第一表面，并且在第一表面和第一和第二导电类型的第二表面区域之间的区域彼此嵌套。第一和第二导电类型的区域是可变地掺杂的，在第一表面附近，第二导电类型的掺杂原子占主导地位，并且在第二表面附近，第一导电类型的掺杂原子占主导地位。此外，提供了第一和第二导电类型的多个浮动区域。

5. 发明授权

US06960798B2 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06960798B2
公开(公告)日：2005-11-01
申请号：US10455842
申请日：2003-06-06
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Martin Weber
IPC分类号： H01L21/336 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/78 , H01L29/80
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.
摘要翻译：半导体部件具有包含阻挡pn结的半导体本体，与第一电极连接的第一导电类型的源区，与形成与第一导电类型互补的第二导电类型的阻挡pn结的区域接壤，第一导电类型的漏极区连接到第二电极。面向排水区的第二导电类型的区域的一侧形成第一表面，并且在位于第一表面和漏区之间的第一表面和第二表面之间的区域中，包括第一和第二导电类型的区域彼此嵌套在一起第二表面定位在离开排水区一定距离处，使得彼此嵌套的第一和第二导电类型的区域不会到达排水区。

6. 发明授权

US06630698B1 High-voltage semiconductor component 有权
标题翻译：高压半导体元件
公开(公告)号：US06630698B1
公开(公告)日：2003-10-07
申请号：US09786022
申请日：2001-11-09
申请人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Weber
发明人： Gerald Deboy , Dirk Ahlers , Helmut Strack , Michael Rueb , Hans Weber
IPC分类号： H01L2980
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/4236 , H01L29/4238 , H01L29/7801 , H01L29/7802 , H01L29/7825
摘要： The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semiconductor areas extend from at least one first zone (6) to near a second zone (1) and are variably doped so that the electric field increases progressively from one zone to the other (6, 1)
摘要翻译：本发明涉及一种高电压半导体元件，其包括以交替方式布置在半导体本体中的交替不同导电类型的半导体区域（4,5）。在半导体体中，所述半导体区域从至少一个第一区域（6）延伸到靠近第二区域（1）并且可变地掺杂，使得电场从一个区域逐渐增加到另一个区域（6,1）

7. 发明授权

US06812524B2 Field effect controlled semiconductor component 有权
标题翻译：场效应控制半导体元件
公开(公告)号：US06812524B2
公开(公告)日：2004-11-02
申请号：US10013999
申请日：2001-12-11
申请人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
发明人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/1095 , H01L29/41766 , H01L29/7816
摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.
摘要翻译：半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。补偿区相对于漂移区具有互补导电类型并且包括至少两个段。选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围当前。

8. 发明授权

US07193293B2 Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor component 有权
标题翻译：具有补偿层，耗尽区和互补耗尽区的半导体元件，具有半导体元件的电路配置，以及掺杂半导体元件的补偿层的方法
公开(公告)号：US07193293B2
公开(公告)日：2007-03-20
申请号：US10141834
申请日：2002-05-09
申请人： Hans Weber , Dirk Ahlers , Gerald Deboy
发明人： Hans Weber , Dirk Ahlers , Gerald Deboy
IPC分类号： H01L29/00
CPC分类号： H01L29/7816 , H01L21/26506 , H01L29/0634 , H01L29/167 , H01L29/66712 , H01L29/7802 , H01L2924/0002 , H03K17/08142 , H01L2924/00
摘要： A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.
摘要翻译：根据电荷载流子补偿的原理起作用的半导体元件具有不完全电离的掺杂物，其被附加地设置在半导体元件的半导体本体中。当施加反向电压时，补偿程度随着时间的推移而变化，半导体组件的击穿电压以补偿程度为基础的增加。本发明还涉及根据本发明的电路配置和掺杂补偿层的方法。

9. 发明授权

US06667514B2 Semiconductor component with a charge compensation structure and associated fabrication 有权
标题翻译：具有电荷补偿结构和相关制造的半导体元件
公开(公告)号：US06667514B2
公开(公告)日：2003-12-23
申请号：US10190119
申请日：2002-07-03
申请人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
发明人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/41766
摘要： A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.
摘要翻译：半导体部件包括电荷补偿结构，其中具有最大局部场强的位置位于电荷补偿结构的补偿边缘区域中。因此，可以显着地改善诸如半导体部件的导通电阻的电参数，而不影响或削弱诸如击穿电压和相对于TRAPATT振荡的鲁棒性的其它参数。还提供了制造具有电荷补偿结构的半导体部件的方法。

10. 发明授权

US06649459B2 Method for manufacturing a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US06649459B2
公开(公告)日：2003-11-18
申请号：US09817594
申请日：2001-03-26
申请人： Gerald Deboy , Wolfgang Friza , Oliver Häberlen , Michael Rüb , Helmut Strack
发明人： Gerald Deboy , Wolfgang Friza , Oliver Häberlen , Michael Rüb , Helmut Strack
IPC分类号： H01L21338
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/1095 , H01L29/41766
摘要： The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.
摘要翻译：本发明涉及一种用于制造半导体元件的方法，该半导体元件包括交替地位于半导体本体中的不同导电类型的半导体区域。不同导电类型的半导体区域至少从一个第一区延伸到靠近第二区的位置。由于沟槽和沟槽填充中的可变掺杂，产生从第一区和第二区两者增加的电场。

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