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    • 4. 发明授权
    • Dynamic threshold voltage MOSFET on SOI
    • SOI上的动态阈值电压MOSFET
    • US07045873B2
    • 2006-05-16
    • US10728750
    • 2003-12-08
    • Xiangdong ChenDureseti ChidambarraoGeng Wang
    • Xiangdong ChenDureseti ChidambarraoGeng Wang
    • H01L29/00
    • H01L29/783
    • Provision of a body control contact adjacent a transistor and between the transistor and a contact to the substrate or well in which the transistor is formed allows connection and disconnection of the substrate of the transistor to and from a zero (ground) or substantially arbitrary low voltage in accordance with control signals applied to the gate of the transistor to cause the transistor to exhibit a variable threshold which maintains good performance at low supply voltages and reduces power consumption/dissipation which is particularly advantageous in portable electronic devices. Floating body effects (when the transistor substrate in disconnected from a voltage source in the “on” state) are avoided since the substrate is discharged when the transistor is switched to the “off” state. The transistor configuration can be employed with both n-type and p-type transistors which may be in complementary pairs.
    • 提供与晶体管相邻并且晶体管与形成晶体管的衬底或阱的接触之间的身体控制接触允许晶体管的衬底与零(接地)或基本上任意的低电压的连接和断开 根据施加到晶体管的栅极的控制信号,使晶体管呈现可变阈值,其在低电源电压下保持良好的性能,并降低了在便携式电子设备中特别有利的功耗/耗散。 避免浮体效应(当晶体管基板与电压源处于“导通”状态断开时),因为当晶体管切换到“关闭”状态时,衬底被放电。 晶体管配置可以与可以互补对的n型和p型晶体管一起使用。
    • 7. 发明申请
    • Dynamic threshold voltage MOSFET on SOI
    • SOI上的动态阈值电压MOSFET
    • US20050121699A1
    • 2005-06-09
    • US10728750
    • 2003-12-08
    • Xiangdong ChenDureseti ChidambarraoGeng Wang
    • Xiangdong ChenDureseti ChidambarraoGeng Wang
    • H01L27/08H01L21/8238H01L27/085H01L27/092H01L27/12H01L29/745H01L29/78H01L29/786
    • H01L29/783
    • Provision of a body control contact adjacent a transistor and between the transistor and a contact to the substrate or well in which the transistor is formed allows connection and disconnection of the substrate of the transistor to and from a zero (ground) or substantially arbitrary low voltage in accordance with control signals applied to the gate of the transistor to cause the transistor to exhibit a variable threshold which maintains good performance at low supply voltages and reduces power consumption/dissipation which is particularly advantageous in portable electronic devices. Floating body effects (when the transistor substrate in disconnected from a voltage source in the “on” state) are avoided since the substrate is discharged when the transistor is switched to the “off” state. The transistor configuration can be employed with both n-type and p-type transistors which may be in complementary pairs.
    • 提供与晶体管相邻并且晶体管与形成晶体管的衬底或阱的接触之间的身体控制接触允许晶体管的衬底与零(接地)或基本上任意的低电压的连接和断开 根据施加到晶体管的栅极的控制信号,使晶体管呈现可变阈值,其在低电源电压下保持良好的性能,并降低了在便携式电子设备中特别有利的功耗/耗散。 避免浮体效应(当晶体管基板与电压源处于“导通”状态断开时),因为当晶体管切换到“关闭”状态时,衬底被放电。 晶体管配置可以与可以互补对的n型和p型晶体管一起使用。