专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130307097A1 Magnetoresistive random access memory cell design 审中-公开
标题翻译：磁阻随机存取存储单元设计
公开(公告)号：US20130307097A1
公开(公告)日：2013-11-21
申请号：US13472085
申请日：2012-05-15
申请人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu , Dujiang Wan
发明人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu , Dujiang Wan
IPC分类号： H01L29/82
CPC分类号： H01L43/08
摘要： A magnetic memory cell comprises in-plane anisotropy tunneling magnetic junction (TMJ) and two fixed in-plane storage-stabilized layers, which splits on the both side of the data storage layer of the TMJ. The magnetizations of the said fixed in-plane storage-stabilized layers are all normal to that of the reference layer of TMJ but point to opposite direction. The existing of the storage-stabilized layers not only enhances the stability of the data storage, but also can reduce the critical current needed to flip the data storage layer via some specially added features.
摘要翻译：磁存储单元包括面内各向异性隧道磁结（TMJ）和两个固定的面内存储稳定层，其分散在TMJ的数据存储层的两侧。所述固定的面内储存稳定层的磁化与TMJ的参考层的磁化正好相反，但指向相反的方向。现有的存储稳定层不仅增强了数据存储的稳定性，而且还可以通过一些特别添加的功能来减少翻转数据存储层所需的临界电流。

2. 发明申请

US20130270661A1 Magnetoresistive random access memory cell design 审中-公开
标题翻译：磁阻随机存取存储单元设计
公开(公告)号：US20130270661A1
公开(公告)日：2013-10-17
申请号：US13448133
申请日：2012-04-16
申请人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： A new magnetic memory cell comprises a perpendicular-anisotropy tunneling magnetic junction (TMJ) and a fixed in-plane spin-polarizing layer, which is separated from the perpendicular-anisotropy data storage layer of tunneling magnetic junction by a non-magnetic layer. The non-magnetic layer can be made of metallic or dielectric materials.
摘要翻译：新的磁存储单元包括垂直各向异性隧道磁结（TMJ）和固定的面内自旋偏振层，其通过非磁性层与隧道磁结的垂直各向异性数据存储层分离。非磁性层可以由金属或介电材料制成。

3. 发明申请

US20130252375A1 Magnet Assisted Alignment Method for Wafer Bonding and Wafer Level Chip Scale Packaging 审中-公开
标题翻译：用于晶圆接合和晶圆级芯片级封装的磁辅助对准方法
公开(公告)号：US20130252375A1
公开(公告)日：2013-09-26
申请号：US13429440
申请日：2012-03-26
申请人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
发明人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/80 , H01L24/81 , H01L24/94 , H01L24/97 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03612 , H01L2224/03614 , H01L2224/0362 , H01L2224/03826 , H01L2224/03827 , H01L2224/0401 , H01L2224/05009 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05547 , H01L2224/05576 , H01L2224/05578 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/08146 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1162 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/80121 , H01L2224/80143 , H01L2224/80169 , H01L2224/80801 , H01L2224/81121 , H01L2224/81143 , H01L2224/81169 , H01L2224/81801 , H01L2224/94 , H01L2224/97 , H01L2924/01322 , H01L2924/1461 , H01L2924/00015 , H01L2924/00014 , H01L2924/014 , H01L2924/01026 , H01L2924/01028 , H01L2924/01078 , H01L2924/01024 , H01L2224/80 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2924/00
摘要： A high-precision alignment method with high throughput is proposed, which can be used for wafer-to-wafer, chip-to-wafer or chip-to-chip bonding. The scheme implements pairing patterned magnets predetermined designed and made using wafer level process on two components (wafer or chip). The magnetization in patterned magnet can be set at predetermined configuration before bonding starts. When, the two components are bought to close proximity after a coarse alignment, the magnetic force will bring the magnet pairs together and aligned the patterned magnet on one component with its mirrored or complimentary patterned magnets on the other component to minimize the overall the magnetic energy of the pairing magnet. A few patterned magnet structures and materials, with their unique merits are proposed as examples for magnet pair for the self-alignment purpose. This method enables solid contact at the bonding interface via patterned magnets under the magnetic force, which avoid the wafer drafting due to the formation of the liquid phases.
摘要翻译：提出了一种高精度的高通量对准方法，可用于晶圆到晶圆，晶片到晶圆或芯片间的接合。该方案实现了使用晶片级处理在两个部件（晶片或芯片）上预先设计和制造的配对图案化磁体。在接合开始之前，图案化磁体中的磁化可以被设定为预定的配置。当两个部件在粗对准之后被购买成靠近时，磁力将使磁体对在一起，并将其上的图案化磁体与其另一部件上的镜像或互补的图案化磁体对准，以最小化整个磁能的配对磁铁。提出了一些具有独特优点的图案化磁体结构和材料作为用于自对准目的的磁体对的示例。该方法能够在磁力下通过图案化的磁体在接合界面处实现牢固的接触，从而避免由于液相的形成引起的晶片牵伸。

4. 发明申请

US20130114334A1 Magnetoresistive random access memory cell with independently operating read and write components 审中-公开
标题翻译：具有独立操作的读写组件的磁阻随机存取存储单元
公开(公告)号：US20130114334A1
公开(公告)日：2013-05-09
申请号：US13288860
申请日：2011-11-03
申请人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.
摘要翻译：提出了一类新的存储单元。有两个分离的脉冲数据写入和感测电流路径。面内脉冲电流用于翻转夹在重金属写入载流层和电介质层之间的垂直各向异性数据存储层的磁化方向。数据存储层内的磁化状态通过图案化的垂直各向异性隧道磁阻（TMR）堆叠通过堆叠的输出电位来检测。提出了两个详细的存储单元：在一个提出的单元中，数据存储层独立于但保持靠近感测TMR堆栈，其磁化方向影响TMR堆栈自由层内的磁化配置，从而最终影响堆栈在另一个提出的单元中，垂直各向异性数据存储层是感测TMR堆栈的自由层，当感测电流通过时，其磁化状态将直接影响堆叠的输出电位。

5. 发明授权

US09293694B2 Magnetoresistive random access memory cell with independently operating read and write components 有权
公开(公告)号：US09293694B2
公开(公告)日：2016-03-22
申请号：US13288860
申请日：2011-11-03
申请人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
IPC分类号： G11C11/00 , H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.

6. 发明授权

US09012265B2 Magnet assisted alignment method for wafer bonding and wafer level chip scale packaging 有权
标题翻译：用于晶片接合和晶圆级芯片级封装的磁铁辅助对准方法
公开(公告)号：US09012265B2
公开(公告)日：2015-04-21
申请号：US13429440
申请日：2012-03-26
申请人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
发明人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
IPC分类号： H01L21/68 , H01L23/00
CPC分类号： H01L24/83 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/80 , H01L24/81 , H01L24/94 , H01L24/97 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03612 , H01L2224/03614 , H01L2224/0362 , H01L2224/03826 , H01L2224/03827 , H01L2224/0401 , H01L2224/05009 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05547 , H01L2224/05576 , H01L2224/05578 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/08146 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1162 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/80121 , H01L2224/80143 , H01L2224/80169 , H01L2224/80801 , H01L2224/81121 , H01L2224/81143 , H01L2224/81169 , H01L2224/81801 , H01L2224/94 , H01L2224/97 , H01L2924/01322 , H01L2924/1461 , H01L2924/00015 , H01L2924/00014 , H01L2924/014 , H01L2924/01026 , H01L2924/01028 , H01L2924/01078 , H01L2924/01024 , H01L2224/80 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2924/00
摘要： A high-precision alignment method with high throughput is proposed, which can be used for wafer-to-wafer, chip-to-wafer or chip-to-chip bonding. The scheme implements pairing patterned magnets predetermined designed and made using wafer level process on two components (wafer or chip). The magnetization in patterned magnet can be set at predetermined configuration before bonding starts. When, the two components are bought to close proximity after a coarse alignment, the magnetic force will bring the magnet pairs together and aligned the patterned magnet on one component with its mirrored or complimentary patterned magnets on the other component to minimize the overall the magnetic energy of the pairing magnet. A few patterned magnet structures and materials, with their unique merits are proposed as examples for magnet pair for the self-alignment purpose. This method enables solid contact at the bonding interface via patterned magnets under the magnetic force, which avoid the wafer drafting due to the formation of the liquid phases.
摘要翻译：提出了一种高精度的高通量对准方法，可用于晶圆到晶圆，晶片到晶圆或芯片间的接合。该方案实现了使用晶片级处理在两个部件（晶片或芯片）上预先设计和制造的配对图案化磁体。在接合开始之前，图案化磁体中的磁化可以被设定为预定的配置。当两个部件在粗对准之后被购买成靠近时，磁力将使磁体对在一起，并将其上的图案化磁体与其另一部件上的镜像或互补的图案化磁体对准，以最小化整个磁能的配对磁铁。提出了一些具有独特优点的图案化磁体结构和材料作为用于自对准目的的磁体对的示例。该方法能够在磁力下通过图案化的磁体在接合界面处实现牢固的接触，从而避免由于液相的形成引起的晶片牵伸。

7. 发明授权

US09432800B1 Wireless near field communication system 有权
标题翻译：无线近场通信系统
公开(公告)号：US09432800B1
公开(公告)日：2016-08-30
申请号：US14680069
申请日：2015-04-07
申请人： Ge Yi , Jinwen Wang , Dujiang Wan , Shaoping Li
发明人： Ge Yi , Jinwen Wang , Dujiang Wan , Shaoping Li
IPC分类号： H04B5/00 , H04W4/00
CPC分类号： H04W4/008 , H04W4/80
摘要： A wireless magnetic field communication system working within the range of less than 1.5 m without induction induced interference during listening mode is proposed. The system comprises at least a transmitter and a receiver. Several novel transmitter designs using either active-connection-control solenoid or spin-orbit torque (SOT) based patterned thin film element(s) are proposed. The system has intrinsic high data security level due to its limited working range, as well as large data transfer rate. The system is suitable to establish a temporary off-the grid magnetic field communication network. It also provides a new data communication approach among modules instead of data cable in industry equipment. The system can be used as a standalone or built-in system for communication between devices or modularized components of a system.
摘要翻译：提出了一种在小于1.5米的范围内工作的无线磁场通信系统，在听觉模式下没有感应干扰。该系统至少包括发射机和接收机。提出了使用有源连接控制螺线管或基于旋转轨道转矩（SOT）的图案化薄膜元件的几种新颖的发射机设计。该系统由于其工作范围有限，数据传输速率大，因此具有内在的高数据安全级别。该系统适合建立一个临时离网电磁场通信网络。它还在模块之间提供了一种新的数据通信方式，而不是工业设备中的数据电缆。该系统可用作独立或内置系统，用于系统的设备或模块化组件之间的通信。

8. 发明授权

US08400731B1 Write head with variable side shield gaps 有权
标题翻译：用可变侧屏蔽间隙写头
公开(公告)号：US08400731B1
公开(公告)日：2013-03-19
申请号：US12426264
申请日：2009-04-19
申请人： Shaoping Li , Ge Yi , Feng Liu
发明人： Shaoping Li , Ge Yi , Feng Liu
IPC分类号： G11B5/127
CPC分类号： G11B5/1475 , G11B5/3116 , Y10T29/49021 , Y10T29/49039
摘要： A magnetic recording head comprises a write pole including a throat region with a leading edge, a trailing edge opposite the leading edge, and first and second side edges opposite one another. The magnetic recording head further comprises a first side wall gap layer disposed alongside the first side edge of the throat region, and a second side wall gap layer disposed alongside the second side edge of the throat region. Each of the first and second side wall gap layers has a first width at the leading edge of the throat region smaller than a second width at the trailing edge of the throat region.
摘要翻译：磁记录头包括一个写柱，它包括一个具有前缘的喉部区域，与前缘相对的后缘，以及彼此相对的第一和第二侧边缘。磁记录头还包括沿着喉部区域的第一侧边缘设置的第一侧壁间隙层和沿着喉部区域的第二侧边缘设置的第二侧壁间隙层。第一和第二侧壁间隙层中的每一个在喉部区域的前缘处具有小于在喉部区域的后缘处的第二宽度的第一宽度。

9. 发明授权

US08717695B1 Characterizing head parameters of a disk drive by evaluating track profile of an overwritten track 有权
标题翻译：通过评估覆盖轨道的轨道轮廓来表征磁盘驱动器的磁头参数
公开(公告)号：US08717695B1
公开(公告)日：2014-05-06
申请号：US13408921
申请日：2012-02-29
申请人： Enhao Lin , Shaoping Li
发明人： Enhao Lin , Shaoping Li
IPC分类号： G11B27/10
CPC分类号： G11B5/455
摘要： A disk drive is disclosed comprising a disk comprising a plurality of tracks, and a head actuated over the disk. The head is positioned over a track while writing a first frequency pattern substantially centered on the track at a first frequency. After writing the first frequency pattern, a second frequency pattern is written substantially centered on the track at a second frequency, wherein the second frequency pattern is written over the first frequency pattern. After writing the second frequency pattern over the first frequency pattern, the head is scanned across the track while reading the disk to generate a read signal. A first frequency component is extracted from the read signal representing the first frequency.
摘要翻译：公开了一种磁盘驱动器，包括包括多个轨道的盘，以及在盘上致动的头。当以第一频率写入基本上以轨道为中心的第一频率图案时，头部位于轨道上方。在写入第一频率模式之后，第二频率模式以第二频率基本上以轨道为中心写入，其中第二频率模式被写入第一频率模式。在第一频率图案上写入第二频率图案之后，在读取磁盘的同时扫描磁头以产生读取信号。从表示第一频率的读取信号中提取第一频率分量。

10. 发明申请

US20120028078A1 Perpendicular Magnetic Recording Media with Magnetic Anisotropy Gradient and Local Exchange Coupling 有权
标题翻译：具有磁各向异性梯度和局部交换耦合的垂直磁记录介质
公开(公告)号：US20120028078A1
公开(公告)日：2012-02-02
申请号：US13270715
申请日：2011-10-11
申请人： Shaoping Li , Kaizhong Gao , Lei Wang , Wenzhong Zhu , Xiaobin Wang
发明人： Shaoping Li , Kaizhong Gao , Lei Wang , Wenzhong Zhu , Xiaobin Wang
IPC分类号： G11B5/66 , G11B5/65
CPC分类号： G11B5/667 , B82Y10/00 , G11B5/64 , G11B5/65 , G11B5/656 , G11B5/66 , G11B5/743 , G11B5/746 , G11B5/82 , G11B2005/0029 , H01F41/0206 , Y10S428/90 , Y10T29/4902 , Y10T29/49032 , Y10T29/49067 , Y10T428/12458 , Y10T428/12465 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： A perpendicular magnetic recording medium adapted for high recording density and high data recording rate comprises a non-magnetic substrate having at least one surface with a layer stack formed thereon, the layer stack including a perpendicular recording layer containing a plurality of columnar-shaped magnetic grains extending perpendicularly to the substrate surface for a length, with a first end distal the surface and a second end proximal the surface, wherein each of the magnetic grains has: (1) a gradient of perpendicular magnetic anisotropy field Hk extending along its length between the first end and second ends; and (2) predetermined local exchange coupling strengths along the length.
摘要翻译：适用于高记录密度和高数据记录速率的垂直磁记录介质包括具有至少一个具有在其上形成层叠层的表面的非磁性基板，该层堆叠包括垂直记录层，该垂直记录层包含多个柱状磁性颗粒垂直于衬底表面延伸一段长度，第一端远离表面，接近表面的第二端，其中每个磁性颗粒具有：（1）垂直磁各向异性场Hk沿其长度延伸的梯度第一端和第二端; 和（2）沿着长度的预定局部交换耦合强度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式