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1. 发明授权

US5828163A Field emitter device with a current limiter structure 失效
标题翻译：具有限流器结构的场发射极器件
公开(公告)号：US5828163A
公开(公告)日：1998-10-27
申请号：US781289
申请日：1997-01-13
申请人： Gary W. Jones , Susan K. Jones , Jeffrey Marino , Joseph K. Ho , R. Mark Boysel , Steven M. Zimmerman , Yachin Liu , Michael J. Costa , Jeffrey A. Silvernail
发明人： Gary W. Jones , Susan K. Jones , Jeffrey Marino , Joseph K. Ho , R. Mark Boysel , Steven M. Zimmerman , Yachin Liu , Michael J. Costa , Jeffrey A. Silvernail
IPC分类号： H01J1/304 , H01J1/02
CPC分类号： H01J1/3042 , H01J2201/319 , H01J2329/00
摘要： A field emitter device includes a column conductor, an insulator, and a resistor structure for advantageously limiting current in a field emitter array. A wide column conductor is deposited on an insulating substrate. An insulator is laid over the column conductor. A high resistance layer is placed on the insulator and is physically isolated from the column conductor. The high resistance material may be chromium oxide or 10%-50% wt % Cr+SiO. A group of microtip electron emitters is placed over the high resistance layer. A low resistance strap interconnects the column conductor with the high resistance layer to connect in an electrical series circuit the column conductor, the high resistance layer, and the group of electron emitters. One or more layers of insulator and a gate electrode, all with cavities for the electron emitters, are laid over the high resistance material. One layer of insulator is selected from a group of materials including SiC, SiO, and Si.sub.3 N.sub.4. An anode plate is attached with intermediate space between the anode plate and the microtip electron emitters being evacuated.
摘要翻译：场致发射器件包括列导体，绝缘体和电阻结构，用于有利地限制场发射器阵列中的电流。在绝缘基板上沉积宽的列导体。绝缘体放置在列导体上。高电阻层被放置在绝缘体上并与柱导体物理隔离。高电阻材料可以是氧化铬或10％-50％重量的Cr + SiO。一组微尖端电子发射体放置在高电阻层上。低电阻带将列导体与高电阻层互连，以连接列导体，高电阻层和电子发射体组的电串联电路。一层或多层绝缘体和栅电极，全部具有用于电子发射体的空腔，铺设在高电阻材料上。一层绝缘体选自包括SiC，SiO和Si 3 N 4的一组材料。阳极板附接有阳极板和正在抽真空的微尖端电子发射体之间的中间空间。

2. 发明授权

US6027388A Lithographic structure and method for making field emitters 失效
标题翻译：制作场致发射体的平版印刷结构和方法
公开(公告)号：US6027388A
公开(公告)日：2000-02-22
申请号：US906311
申请日：1997-08-05
申请人： Gary W. Jones , Susan K. Jones , Amalkumar P. Ghosh
发明人： Gary W. Jones , Susan K. Jones , Amalkumar P. Ghosh
IPC分类号： H01J9/02
CPC分类号： H01J9/025
摘要： A mask structure may be formed on a field emitter substrate for use in forming emitter wells on and in the substrate. The mask structure may be formed from a multilayered structure on the surface of the substrate using a laser lithography process. From the substrate up, the multilayered structure may include an antireflective coating, a photoresistive layer, an optional etch resistant layer between the antireflective coating and the photoresistive layer, and an optional second antireflective coating between the optional etch resistant layer and the photoresistive layer. The pattern of the mask structure may be transferred to the multilayer structure by exposing the photoresistive layer to laser light. The antireflective coatings may reduce the amount of stray laser light that reflects off the substrate and onto the back of the photoresistive layer. Development of the photoresistive layer following exposure to laser light may be monitored and selectively arrested to form a mask structure with a selective pitch. The antireflective coating may be etched optionally so that it is undercut beneath the overlying etch resistant layer or photoresistive layer to aid in the formation of emitters using a veil field emitter process or an etched gate process.
摘要翻译：掩模结构可以形成在场发射器衬底上，用于在衬底上和衬底中形成发射极阱。掩模结构可以使用激光光刻工艺在衬底的表面上由多层结构形成。从衬底向上，多层结构可以包括抗反射涂层，光致抗蚀剂层，抗反射涂层和光致抗蚀剂层之间的任选的耐蚀刻层，以及可选的耐蚀刻层和光刻胶层之间的可选的第二抗反射涂层。掩模结构的图案可以通过将光致抗蚀剂层暴露于激光来转移到多层结构。抗反射涂层可以减少从衬底反射到光致抗蚀剂层背面的杂散激光的量。暴露于激光后的光致抗蚀剂层的显影可以被监测并选择性地阻止以形成具有选择性间距的掩模结构。可以任选地对抗反射涂层进行蚀刻，使其在覆盖的抗蚀刻层或光致抗蚀剂层下方被切下，以帮助使用面膜场发射器工艺或蚀刻浇口工艺形成发射器。

3. 发明授权

US5317938A Method for making microstructural surgical instruments 失效
标题翻译：微结构外科手术器械的制作方法
公开(公告)号：US5317938A
公开(公告)日：1994-06-07
申请号：US822021
申请日：1992-01-16
申请人： Eugene de Juan, Jr. , Gary W. Jones , Susan K. Jones , Arnold Reisman , Jon Van Winkle
发明人： Eugene de Juan, Jr. , Gary W. Jones , Susan K. Jones , Arnold Reisman , Jon Van Winkle
IPC分类号： A61B17/32 , A61F9/007 , B23P15/40 , B26B9/00 , B21K11/00
CPC分类号： A61B17/32 , A61F9/00736 , B23P15/40 , B26B9/00
摘要： A method of making a microsurgical cutter from a flat planar substrate having a top surface and a bottom surface comprises the steps of (a) forming a photoresist mask layer on the top surface in the pattern of the microsurgical instrument, the mask layer having an edge portion formed in a predetermined pattern therein; and then (b) etching isotropically the top surface of the substrate through the top surface to the bottom surface so that the top surface and bottom surface meet at a cutting edge portion, with the cutting edge portion having a configuration corresponding to the edge portion of the mask layer. The substrates may be formed from semiconductor materials such as silicon, silicon carbide, sapphire and diamond.
摘要翻译：从具有顶表面和底表面的平面平面基底制造显微手术切割器的方法包括以下步骤：（a）在显微外科器械的图案的顶表面上形成光致抗蚀剂掩模层，掩模层具有边缘在其中以预定图案形成的部分; 然后（b）通过上表面到底面各向同性蚀刻基板的顶表面，使得顶表面和底表面在切割边缘部分相交，其中切割边缘部分具有对应于掩模层。衬底可以由诸如硅，碳化硅，蓝宝石和金刚石的半导体材料形成。

4. 发明授权

US5479061A Pleated sheet microelectromechanical transducer 失效
标题翻译：褶皱片微机电换能器
公开(公告)号：US5479061A
公开(公告)日：1995-12-26
申请号：US999161
申请日：1992-12-31
申请人： Stephen M. Bobbio , Thomas D. DuBois , Bruce W. Dudley , Susan K. Jones , Mark D. Kellam , Farid M. Tranjan
发明人： Stephen M. Bobbio , Thomas D. DuBois , Bruce W. Dudley , Susan K. Jones , Mark D. Kellam , Farid M. Tranjan
IPC分类号： H02N1/00
CPC分类号： H02N1/006
摘要： An electrically and mechanically robust microelectromechanical transducer is formed of a pleated dielectric sheet having patterned electrical conductors on the opposing faces thereof. The pleats define a plurality of spaced apart walls, with each wall including an electrically conductive portion at one side thereof. Positive and negative voltages, applied to opposite faces of the pleated sheet, cause the walls to move towards one another by electrostatic attraction. The walls can also move away from one another by electrostatic repulsion upon application of appropriate voltages. The microelectromechanical transducer may be fabricated by fabricating a sheet with integral pleats or by forming a "self-pleating" flat sheet which forms pleats after conductor fabrication thereon.
摘要翻译：电和机械鲁棒的微电子机械换能器由在其相对面上具有图案化电导体的折叠电介质片形成。褶皱限定多个间隔开的壁，每个壁在其一侧包括导电部分。施加到打褶片的相对面的正电压和负电压导致壁通过静电吸引而相互移动。在施加适当的电压时，壁也可以通过静电排斥而相互远离。微机电换能器可以通过制造具有整体褶皱的片材或者通过形成在其上制造导体之后形成褶皱的“自打褶”平板来制造。

5. 发明授权

US5366852A Methods for treating photoresists 失效
标题翻译：光致抗蚀剂的处理方法
公开(公告)号：US5366852A
公开(公告)日：1994-11-22
申请号：US948022
申请日：1992-09-21
申请人： Edward K. Pavelchek , Peter W. Freeman , John F. Bohland , Susan K. Jones , Bruce W. Dudley
发明人： Edward K. Pavelchek , Peter W. Freeman , John F. Bohland , Susan K. Jones , Bruce W. Dudley
IPC分类号： G03F7/36 , G03F7/40 , G03F7/30
CPC分类号： G03F7/40 , G03F7/36
摘要： The present invention comprises methods for treating photoresists and forming photoresist relief images, including a method comprising providing a photoresist coating having a crosslinked surface layer, treating the photoresist coating with an organometallic material, and developing the photoresist coating to provide a relief image comprising an etch resistant effective amount of organometallic material.
摘要翻译：本发明包括用于处理光致抗蚀剂和形成光致抗蚀剂浮雕图像的方法，包括提供具有交联表面层的光致抗蚀剂涂层，用有机金属材料处理光致抗蚀剂涂层并显影光致抗蚀剂涂层以提供包括蚀刻有效量的有机金属材料。

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