专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008002813A3 CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS 审中-公开
标题翻译：使用具有增强读取和写入标志的这种细胞的磁性转移和磁性记忆的磁性存储细胞的当前驱动切换
公开(公告)号：WO2008002813A3
公开(公告)日：2009-01-08
申请号：PCT/US2007071710
申请日：2007-06-20
申请人： GRANDIS INC , RENESAS TECH CORP , CHEN EUGENE YOUJUN , HUAI YIMING , PANCHULA ALEX FISCHER , WANG LIEN-CHANG , LUO XIAO
发明人： CHEN EUGENE YOUJUN , HUAI YIMING , PANCHULA ALEX FISCHER , WANG LIEN-CHANG , LUO XIAO
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

2. 发明申请

WO2007143393A2 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER 审中-公开
标题翻译：用于提供使用旋转转移的磁记忆结构的方法和系统
公开(公告)号：WO2007143393A2
公开(公告)日：2007-12-13
申请号：PCT/US2007069558
申请日：2007-05-23
申请人： GRANDIS INC , RENESAS TECH CORP , LUO XIAO , CHEN EUGENE YOUJUN , WANG LIEN-CHANG , HUAI YIMING
发明人： LUO XIAO , CHEN EUGENE YOUJUN , WANG LIEN-CHANG , HUAI YIMING
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。局部字线与第一电阻率的选择装置连接。每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。位线与磁性元件连接。源极线与选择器件连接。每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

3. 发明申请

WO2007117392A3 ON-PLUG MAGNETIC TUNNEL JUNCTION DEVICES BASED ON SPIN TORQUE TRANSFER SWITCHING 审中-公开
标题翻译：基于旋转转矩开关的ON-PLUG磁性隧道连接装置
公开(公告)号：WO2007117392A3
公开(公告)日：2008-11-06
申请号：PCT/US2007008203
申请日：2007-03-29
申请人： GRANDIS INC , RENESAS TECH CORP , WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
发明人： WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L29/74
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

4. 发明申请

WO2007075889A2 CURRENT-SWITCHED SPIN-TRANSFER MAGNETIC DEVICES WITH REDUCED SPIN-TRANSFER SWITCING CURRENT DENSITY 审中-公开
标题翻译：具有降低的转子开关电流密度的电流切换的旋转磁体装置
公开(公告)号：WO2007075889A2
公开(公告)日：2007-07-05
申请号：PCT/US2006048793
申请日：2006-12-21
申请人： GRANDIS INC , HUAI YIMING , DIAO ZHITAO , PANCHULA ALEX , CHEN EUGENE YOUJUN , WANG LIEN-CHANG
发明人： HUAI YIMING , DIAO ZHITAO , PANCHULA ALEX , CHEN EUGENE YOUJUN , WANG LIEN-CHANG
IPC分类号： G11C11/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
摘要翻译：诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

5. 发明申请

WO2007137055A3 HIGH DENSITY MAGNETIC MEMORY CELL LAYOUT FOR SPIN TRANSFER TORQUE MAGNETIC MEMORIES UTILIZING DONUT SHAPED TRANSISTORS 审中-公开
标题翻译：用于旋转形状晶体管的转子转子磁记录的高密度磁记录单元布局
公开(公告)号：WO2007137055A3
公开(公告)日：2008-11-06
申请号：PCT/US2007069014
申请日：2007-05-16
申请人： GRANDIS INC , RENESAS TECH CORP , XIAO LUO , WANG LIEN-CHANG
发明人： XIAO LUO , WANG LIEN-CHANG
IPC分类号： G11C11/00 , G11C11/14 , H01L27/088
CPC分类号： H01L27/228 , G11C11/16 , H01L29/4238
摘要： A method and system for providing and using a magnetic storage cell and magnetic memory is described. The method and system include providing a magnetic element and providing a selection device. The magnetic element is programmable to a first state by a first write current driven through the magnetic element in a first direction and to a second state by a second write current driven through the magnetic element in a second direction. The selection device is connected with the magnetic element. The selection device includes a gate having an aperture therein. The selection device is configured such that the first write current and second write current are provided to the magnetic element across the aperture.
摘要翻译：描述了一种用于提供和使用磁存储单元和磁存储器的方法和系统。该方法和系统包括提供磁性元件并提供选择装置。磁性元件可通过在第一方向通过磁性元件驱动的第一写入电流而被编程为第一状态，并且通过在第二方向上被驱动通过磁性元件的第二写入电流而被编程为第二状态。选择装置与磁性元件连接。选择装置包括其中具有孔的门。选择装置被配置为使得第一写入电流和第二写入电流被提供给穿过该孔的磁性元件。

6. 发明申请

WO2007062100A3 METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY CELLS AND MAGNETIC DEVICES 审中-公开
标题翻译：用于提供存储电池和磁性装置的电流平衡写入的方法和系统
公开(公告)号：WO2007062100A3
公开(公告)日：2009-05-07
申请号：PCT/US2006045168
申请日：2006-11-22
申请人： GRANDIS INC , WANG LIEN-CHANG , DIAO ZHITAO , DING YUNFEI
发明人： WANG LIEN-CHANG , DIAO ZHITAO , DING YUNFEI
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

7. 发明专利

JP2008211011A Magnetic memory device and manufacturing method therefor 有权
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：JP2008211011A
公开(公告)日：2008-09-11
申请号：JP2007046776
申请日：2007-02-27
申请人： Grandis Inc , Renesas Technology Corp , グランディスインコーポレイテッドGrandis,Inc. , 株式会社ルネサステクノロジ
发明人： FURUTA HARUO , UENO SHUICHI , MATSUDA AKIFUMI , FUKUMURA TATSUYA , KUROIWA TAKEHARU , WANG LIEN-CHANG , CHEN EUGENE , HUAI YIMING
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a nonvolatile magnetic memory which reduces characteristic irregularities between TMR elements and offer high manufacturing yield, and to provide the structure of the nonvolatile magnetic memory.
SOLUTION: The manufacturing method for the magnetic memory device having a TMR element includes a step of forming an insulating film on an interlayer insulating film incorporating a wiring layer therein, an opening step of forming an opening on the insulating film to expose the wiring layer, a metal layer forming step of forming a metal layer on the insulating layer to fill the opening with the metal layer, a CMP step of grinding to remove the metal layer on the insulating layer using a CMP method and making the metal layer remaining in the opening into a lower electrode, and a step of forming the TMR element on the lower electrode.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种降低TMR元件之间的特征不均匀性并提供高制造成品率的非易失性磁存储器的制造方法，并提供非易失性磁存储器的结构。解决方案：具有TMR元件的磁存储器件的制造方法包括在其中包含布线层的层间绝缘膜上形成绝缘膜的步骤，在绝缘膜上形成开口以暴露出绝缘膜的步骤布线层，金属层形成步骤，在绝缘层上形成金属层以用金属层填充开口; CMP步骤，使用CMP方法研磨以去除绝缘层上的金属层，并使金属层保持在下部电极的开口中，以及在下部电极上形成TMR元件的步骤。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2012235159A Manufacturing method for magnetic memory device and magnetic memory device 有权
标题翻译：磁记忆装置和磁记忆装置的制造方法
公开(公告)号：JP2012235159A
公开(公告)日：2012-11-29
申请号：JP2012169160
申请日：2012-07-31
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社 , Grandis Inc , グランディスインコーポレイテッドGrandis,Inc.
发明人： FURUTA HARUO , UENO SHUICHI , MATSUDA AKIFUMI , FUKUMURA TATSUYA , KUROIWA TAKEHARU , WANG LIEN-CHANG , CHEN EUGENE , HUAI YIMING
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a nonvolatile magnetic memory which reduces dispersion of characteristics between TMR elements and has high manufacturing yield, and to provide structure of the nonvolatile magnetic memory.SOLUTION: A manufacturing method for a magnetic memory device having a TMR element comprises: a step for forming an insulating film on an interlayer insulating film where a wiring layer is disposed; an opening step for forming an opening on the insulating film so as to expose the wiring layer; a metal layer forming step for forming a metal layer on the insulating film so as to fill the opening with the metal layer; a CMP step for grinding to remove the metal layer on the insulating film by using a CMP method and making the metal layer remaining in the opening to be a lower electrode; and a step for forming the TMR element on the lower electrode.
摘要翻译：解决的问题：提供一种减少TMR元件之间的特性分散并且制造成品率高的非易失性磁性存储器的制造方法，提供非易失性磁性存储器的结构。解决方案：具有TMR元件的磁存储器件的制造方法包括：在布置有布线层的层间绝缘膜上形成绝缘膜的步骤; 用于在所述绝缘膜上形成开口以使所述布线层露出的开口步骤; 金属层形成步骤，用于在绝缘膜上形成金属层，以便用金属层填充开口; CMP步骤，通过使用CMP方法研磨以除去绝缘膜上的金属层，并使残留在开口中的金属层成为下电极; 以及在下电极上形成TMR元件的步骤。版权所有（C）2013，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式