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1. 发明申请

WO2008002813A3 CURRENT DRIVEN SWITCHING OF MAGNETIC STORAGE CELLS UTILIZING SPIN TRANSFER AND MAGNETIC MEMORIES USING SUCH CELLS HAVING ENHANCED READ AND WRITE MARGINS 审中-公开
标题翻译：使用具有增强读取和写入标志的这种细胞的磁性转移和磁性记忆的磁性存储细胞的当前驱动切换
公开(公告)号：WO2008002813A3
公开(公告)日：2009-01-08
申请号：PCT/US2007071710
申请日：2007-06-20
申请人： GRANDIS INC , RENESAS TECH CORP , CHEN EUGENE YOUJUN , HUAI YIMING , PANCHULA ALEX FISCHER , WANG LIEN-CHANG , LUO XIAO
发明人： CHEN EUGENE YOUJUN , HUAI YIMING , PANCHULA ALEX FISCHER , WANG LIEN-CHANG , LUO XIAO
IPC分类号： G11C11/15
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer. The magnetic memory is configured such that either the read current(s) flow from the free layer(s) to the dominant spacer if the maximum low resistance state read current divided by the minimum low resistance state write current is greater than the maximum high resistance state read current divided by the minimum high resistance state write current or the read current(s) flow from the dominant spacer to the free layer(s) if the maximum low resistance state read current divided by the minimum low resistance state write current is less than the maximum high resistance state read current divided by the minimum high resistance state write current.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。磁存储器包括阵列中的磁存储单元，位线和源极线。每个磁存储单元包括至少一个磁性元件。磁性元件可以通过驱动通过磁性元件的写入电流来编程。每个磁性元件具有自由和固定的层和主要间隔物。如果最大低电阻状态读取电流除以最小低电阻状态写入电流除以最大高电阻，则磁存储器被配置为使得读取电流从自由层流向主要间隔物如果最小低电阻状态读取电流除以最小低电阻状态写入电流，则状态读取电流除以最小高电阻状态写入电流或从主要间隔物到自由层的读取电流（s）比最大高电阻状态读取电流除以最小高电阻状态写入电流。

2. 发明申请

WO2007143393A2 METHOD AND SYSTEM FOR PROVIDING A MAGNETIC MEMORY STRUCTURE UTILIZING SPIN TRANSFER 审中-公开
标题翻译：用于提供使用旋转转移的磁记忆结构的方法和系统
公开(公告)号：WO2007143393A2
公开(公告)日：2007-12-13
申请号：PCT/US2007069558
申请日：2007-05-23
申请人： GRANDIS INC , RENESAS TECH CORP , LUO XIAO , CHEN EUGENE YOUJUN , WANG LIEN-CHANG , HUAI YIMING
发明人： LUO XIAO , CHEN EUGENE YOUJUN , WANG LIEN-CHANG , HUAI YIMING
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。局部字线与第一电阻率的选择装置连接。每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。位线与磁性元件连接。源极线与选择器件连接。每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

3. 发明申请

WO2007117392A3 ON-PLUG MAGNETIC TUNNEL JUNCTION DEVICES BASED ON SPIN TORQUE TRANSFER SWITCHING 审中-公开
标题翻译：基于旋转转矩开关的ON-PLUG磁性隧道连接装置
公开(公告)号：WO2007117392A3
公开(公告)日：2008-11-06
申请号：PCT/US2007008203
申请日：2007-03-29
申请人： GRANDIS INC , RENESAS TECH CORP , WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
发明人： WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L29/74
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

4. 发明申请

WO2007075889A2 CURRENT-SWITCHED SPIN-TRANSFER MAGNETIC DEVICES WITH REDUCED SPIN-TRANSFER SWITCING CURRENT DENSITY 审中-公开
标题翻译：具有降低的转子开关电流密度的电流切换的旋转磁体装置
公开(公告)号：WO2007075889A2
公开(公告)日：2007-07-05
申请号：PCT/US2006048793
申请日：2006-12-21
申请人： GRANDIS INC , HUAI YIMING , DIAO ZHITAO , PANCHULA ALEX , CHEN EUGENE YOUJUN , WANG LIEN-CHANG
发明人： HUAI YIMING , DIAO ZHITAO , PANCHULA ALEX , CHEN EUGENE YOUJUN , WANG LIEN-CHANG
IPC分类号： G11C11/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
摘要翻译：诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

5. 发明申请

WO2007035786A3 MAGNETIC DEVICES HAVING STABILIZED FREE FERROMAGNETIC LAYER OR MULTILAYERED FREE FERROMAGNETIC LAYER 审中-公开
标题翻译：具有稳定的免费FERROMAGNETIC层或多层免费FERROMAGNETIC层的磁性器件
公开(公告)号：WO2007035786A3
公开(公告)日：2009-05-07
申请号：PCT/US2006036572
申请日：2006-09-19
申请人： GRANDIS INC , HUAI YIMING , DIAO ZHITAO , CHEN EUGENE YOUJUN
发明人： HUAI YIMING , DIAO ZHITAO , CHEN EUGENE YOUJUN
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。每个自由铁磁层可以包括两层或更多层，并且可以是包括第一和第二铁磁层的多层自由铁磁性堆叠和在第一和第二铁磁层之间的非磁性间隔物。

6. 发明申请

WO2007025050A3 SPIN-TRANSFER SWITCHING MAGNETIC ELEMENTS USING FERRIMAGNETS AND MAGNETIC MEMORIES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：使用磁铁元件的磁铁转子和磁性记忆体的转子切换磁性元件
公开(公告)号：WO2007025050A3
公开(公告)日：2009-04-16
申请号：PCT/US2006033093
申请日：2006-08-23
申请人： GRANDIS INC , PAKALA MAHENDRA , CHEN EUGENE YOUJUN , HUAI YIMING
发明人： PAKALA MAHENDRA , CHEN EUGENE YOUJUN , HUAI YIMING
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/10
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare- earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。自由层是亚铁磁性的，并且包括导电铁氧体，石榴石，不包括稀土的亚铁磁合金，重稀土 - 过渡金属合金，半金属亚铁磁性和双层中的至少一种。双层包括稀土 - 过渡金属合金层和自旋电流增强层。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

7. 发明申请

WO2006133342A3 FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN 审中-公开
标题翻译：快速磁记忆装置利用旋转传递和磁性元件
公开(公告)号：WO2006133342A3
公开(公告)日：2007-04-12
申请号：PCT/US2006022233
申请日：2006-06-07
申请人： GRANDIS INC , DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
发明人： DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

8. 发明申请

WO2007047311A3 SPIN TRANSFER BASED MAGNETIC STORAGE CELLS UTILIZING GRANULAR FREE LAYERS AND MAGNETIC MEMORIES USING SUCH CELLS 审中-公开
标题翻译：使用这种细胞的基于转移的磁性储存细胞利用颗粒自由层和磁性记忆
公开(公告)号：WO2007047311A3
公开(公告)日：2009-04-30
申请号：PCT/US2006039744
申请日：2006-10-11
申请人： GRANDIS INC , APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
发明人： APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
IPC分类号： G11B5/39 , G11B5/127 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

9. 发明申请

WO2007100626A3 CURRENT DRIVEN MEMORY CELLS HAVING ENHANCED CURRENT AND ENHANCED CURRENT SYMMETRY 审中-公开
标题翻译：具有增强电流和增强电流对称性的电流驱动存储器电池
公开(公告)号：WO2007100626A3
公开(公告)日：2008-12-24
申请号：PCT/US2007004662
申请日：2007-02-22
申请人： GRANDIS INC , HUAI YIMING , CHEN EUGENE
发明人： HUAI YIMING , CHEN EUGENE
IPC分类号： G11C11/00
CPC分类号： G11C11/1697 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C2013/0071 , G11C2013/0073
摘要： A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.
摘要翻译：描述了一种用于提供和使用磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元。每个磁存储单元包括磁性元件和与磁性元件耦合的选择装置。通过在第一或第二方向通过磁性元件驱动的写入电流来对磁性元件进行编程。一方面，该方法和系统包括提供与磁存储单元和电压源耦合的电压源和电压泵。电源提供电源电压。电压泵向选择装置提供具有大于电源电压的幅度的偏置电压。另一方面包括在氧化物晶体管上提供硅作为选择装置。另一方面包括向晶体管的主体提供当晶体管截止时为第一电压的体偏置电压，以及晶体管导通时的第二电压。

10. 发明申请

WO2006071724A3 MTJ ELEMENTS WITH HIGH SPIN POLARIZATION LAYERS CONFIGURED FOR SPIN-TRANSFER SWITCHING AND SPINTRONICS DEVICES USING THE MAGNETIC ELEMENTS 审中-公开
标题翻译：具有配置用于旋转切换的高旋转极化层的MTJ元件和使用磁性元件的旋转器件
公开(公告)号：WO2006071724A3
公开(公告)日：2007-06-07
申请号：PCT/US2005046584
申请日：2005-12-22
申请人： GRANDIS INC , HUAI YIMING , PAKALA MAHENDRA
发明人： HUAI YIMING , PAKALA MAHENDRA
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/3204 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F10/3286 , H01F41/302
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing first (102) and second (120) pinned layers, a free layer (114), and first (112) and second (116) barrier layers between the first and second pinned layers, respectively, and the free layer. The first barrier layer is oreferably crystalline MgO, which is insulating, and configured to allow tunneling through the first barrier layer. Furthermore, the first barrier layer has an interface with another layer, such as the free layer or the first pinned layer. The interface has a structure that provides a high spin polarization of at least fifty percent and preferably over eighty percent. The second barrier layer is insulating and configured to allow tunneling through the second barrier layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括分别在第一和第二被钉扎层之间提供第一（102）和第二（120）钉扎层，自由层（114）以及第一（112）和第二（116）阻挡层，层。第一阻挡层是结晶的MgO，其是绝缘的，并且被配置为允许隧道穿过第一阻挡层。此外，第一阻挡层具有与另一层（例如自由层或第一固定层）的界面。界面具有提供至少百分之五十，优选百分之八十以上的高自旋极化的结构。第二阻挡层是绝缘的并且被配置为允许隧道穿过第二阻挡层。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

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