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1. 发明申请

WO2007075889A2 CURRENT-SWITCHED SPIN-TRANSFER MAGNETIC DEVICES WITH REDUCED SPIN-TRANSFER SWITCING CURRENT DENSITY 审中-公开
标题翻译：具有降低的转子开关电流密度的电流切换的旋转磁体装置
公开(公告)号：WO2007075889A2
公开(公告)日：2007-07-05
申请号：PCT/US2006048793
申请日：2006-12-21
申请人： GRANDIS INC , HUAI YIMING , DIAO ZHITAO , PANCHULA ALEX , CHEN EUGENE YOUJUN , WANG LIEN-CHANG
发明人： HUAI YIMING , DIAO ZHITAO , PANCHULA ALEX , CHEN EUGENE YOUJUN , WANG LIEN-CHANG
IPC分类号： G11C11/22
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/1693
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.
摘要翻译：诸如磁性或磁阻隧道结（MTJ）和自旋阀的磁性多层结构具有一个或多个自旋扩散层，以将电子自旋扩散到MTJ或自旋阀结构外部，以减少用于切换自由层的自旋转移开关电流。

2. 发明申请

WO2007117392A3 ON-PLUG MAGNETIC TUNNEL JUNCTION DEVICES BASED ON SPIN TORQUE TRANSFER SWITCHING 审中-公开
标题翻译：基于旋转转矩开关的ON-PLUG磁性隧道连接装置
公开(公告)号：WO2007117392A3
公开(公告)日：2008-11-06
申请号：PCT/US2007008203
申请日：2007-03-29
申请人： GRANDIS INC , RENESAS TECH CORP , WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
发明人： WANG LIEN-CHANG , CHEN EUGENE YOUJUN , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L29/74
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： Techniques and device designs associated with devices having magnetic or magnetoresistive tunnel junctions (MTJs) configured to operate based on spin torque transfer switching. On-plug MTJ designs and fabrication techniques are described.
摘要翻译：与具有磁或磁阻隧道结（MTJ）的装置相关联的技术和设备设计，其被配置为基于自旋扭矩传递切换进行操作。描述了插头MTJ设计和制造技术。

3. 发明申请

WO2007035786A3 MAGNETIC DEVICES HAVING STABILIZED FREE FERROMAGNETIC LAYER OR MULTILAYERED FREE FERROMAGNETIC LAYER 审中-公开
标题翻译：具有稳定的免费FERROMAGNETIC层或多层免费FERROMAGNETIC层的磁性器件
公开(公告)号：WO2007035786A3
公开(公告)日：2009-05-07
申请号：PCT/US2006036572
申请日：2006-09-19
申请人： GRANDIS INC , HUAI YIMING , DIAO ZHITAO , CHEN EUGENE YOUJUN
发明人： HUAI YIMING , DIAO ZHITAO , CHEN EUGENE YOUJUN
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , G11B5/3983 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3268 , H01L27/228 , H01L43/10
摘要： Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.
摘要翻译：诸如磁性或磁阻型隧道结（MTJ）和自旋阀的磁性多层结构具有磁性偏置层，该磁性偏置层形成在自由铁磁层的旁边并磁耦合到自由铁磁层，以实现针对由例如热波动和误差引起的波动的期望的稳定性领域。具有低纵横比的稳定的MTJ单元可以使用CMOS处理制造，例如使用磁偏置层的例如高密度MRAM存储器件和其他器件。可以通过驱动垂直于层的写入电流，使用自旋转移感应开关对这种多层结构进行编程。每个自由铁磁层可以包括两层或更多层，并且可以是包括第一和第二铁磁层的多层自由铁磁性堆叠和在第一和第二铁磁层之间的非磁性间隔物。

4. 发明申请

WO2007062100A3 METHOD AND SYSTEM FOR PROVIDING CURRENT BALANCED WRITING FOR MEMORY CELLS AND MAGNETIC DEVICES 审中-公开
标题翻译：用于提供存储电池和磁性装置的电流平衡写入的方法和系统
公开(公告)号：WO2007062100A3
公开(公告)日：2009-05-07
申请号：PCT/US2006045168
申请日：2006-11-22
申请人： GRANDIS INC , WANG LIEN-CHANG , DIAO ZHITAO , DING YUNFEI
发明人： WANG LIEN-CHANG , DIAO ZHITAO , DING YUNFEI
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing at least one magnetic storage cell and at least one dummy resistor coupled with the at least one magnetic storage cell at least for a write operation of the at least one magnetic storage cell. Each of the at least one magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element being programmed by a first write current driven through the magnetic element in a first direction and a second write current driven through the magnetic element in a second direction. The selection device is configured to be coupled between the magnetic element and the at least one dummy resistor.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括至少提供至少一个磁存储单元和至少一个与至少一个磁存储单元耦合的虚拟电阻器，用于至少一个磁存储单元的写入操作。所述至少一个磁存储单元中的每一个包括与所述磁性元件耦合的磁性元件和选择装置。磁性元件由第一方向驱动通过磁性元件的第一写入电流和沿着第二方向驱动通过磁性元件的第二写入电流来编程。选择装置被配置为耦合在磁性元件和至少一个虚拟电阻器之间。

5. 发明申请

WO2006133342A3 FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN 审中-公开
标题翻译：快速磁记忆装置利用旋转传递和磁性元件
公开(公告)号：WO2006133342A3
公开(公告)日：2007-04-12
申请号：PCT/US2006022233
申请日：2006-06-07
申请人： GRANDIS INC , DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
发明人： DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供多个磁存储单元，多个字线和多个位线。多个磁存储单元中的每一个包括多个磁性元件和至少一个选择晶体管。多个磁性元件中的每一个能够通过由磁性元件驱动的写入电流使用自旋转移感应开关来编程。多个磁性元件中的每一个具有第一端和第二端。所述至少一个选择晶体管耦合到所述多个磁性元件中的每一个的第一端。多个字线与多个选择晶体管耦合，并且选择性地使能多个选择晶体管的一部分。

6. 发明申请

WO2007047311A3 SPIN TRANSFER BASED MAGNETIC STORAGE CELLS UTILIZING GRANULAR FREE LAYERS AND MAGNETIC MEMORIES USING SUCH CELLS 审中-公开
标题翻译：使用这种细胞的基于转移的磁性储存细胞利用颗粒自由层和磁性记忆
公开(公告)号：WO2007047311A3
公开(公告)日：2009-04-30
申请号：PCT/US2006039744
申请日：2006-10-11
申请人： GRANDIS INC , APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
发明人： APALKOV DMYTRO , DIAO ZHITAO , DING YUNFEL , HUAI YIMING
IPC分类号： G11B5/39 , G11B5/127 , G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

7. 发明申请

WO2005079528A3 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 审中-公开
标题翻译：具有低饱和磁化自由层的旋转磁体元件
公开(公告)号：WO2005079528A3
公开(公告)日：2006-10-19
申请号：PCT/US2005005448
申请日：2005-02-18
申请人： GRANDIS INC , NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
发明人： NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
IPC分类号： H01L43/00 , G11B5/673 , G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303
摘要： A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer resides between the pinned and free layers. The free layer can be switched using spin transfer when a write current is passed through the magnetic element. The magnetic element may also include a barrier layer, a second pinned layer. Alternatively, second pinned and second spacer layers and a second free layer magnetostatically coupled to the free layer are included. In one aspect, the free layer(s) include ferromagnetic material(s) diluted with nonmagnetic material(s) and/or ferrimagnetically doped to provide low saturation magnetization(s).
摘要翻译：公开了一种用于提供可用于磁存储器中的磁性元件的方法和系统。磁性元件包括固定，非磁性间隔物和自由层。间隔层位于固定层和自由层之间。当写入电流通过磁性元件时，可以使用自旋转移来切换自由层。磁性元件还可以包括阻挡层，第二被钉扎层。或者，包括第二固定和第二间隔层和静电耦合到自由层的第二自由层。在一个方面，自由层包括用非磁性材料稀释的铁磁材料和/或亚铁磁掺杂以提供低的饱和磁化强度。

8. 发明申请

WO2006063007A2 METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：提供高纹理磁阻元件和磁记忆的方法和系统
公开(公告)号：WO2006063007A2
公开(公告)日：2006-06-15
申请号：PCT/US2005044180
申请日：2005-12-06
申请人： GRANDIS INC , PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
发明人： PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许穿过间隔层的隧穿。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

9. 发明公开

EP1889261A4 FAST MAGNETIC MEMORY DEVICES UTILIZING SPIN TRANSFER AND MAGNETIC ELEMENTS USED THEREIN 审中-公开
标题翻译：自旋转移和ITS中使用的磁性元件FAST磁存储设备
公开(公告)号：EP1889261A4
公开(公告)日：2008-12-24
申请号：EP06772509
申请日：2006-06-07
申请人： GRANDIS INC
发明人： DIAO ZHITAO , HUAI YIMING , PAKALA MAHENDRA , QIAN ZHENGHONG
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells, a plurality of word lines, and a plurality of bit lines. Each of the plurality of magnetic storage cells includes a plurality of magnetic elements and at least one selection transistor. Each of the plurality of magnetic elements is capable of being programmed using spin transfer induced switching by a write current driven through the magnetic element. Each of the plurality of magnetic elements has a first end and a second end. The at least one selection transistor is coupled to the first end of each of the plurality of magnetic elements. The plurality of word lines is coupled with the plurality of selection transistors and selectively enables a portion of the plurality of selection transistors.

10. 发明公开

EP1716561A4 SPIN TRANSFER MAGNETIC ELEMENT HAVING LOW SATURATION MAGNETIZATION FREE LAYERS 审中-公开
标题翻译：与磁化低饱和HAVING自由层的自旋转移磁性元件
公开(公告)号：EP1716561A4
公开(公告)日：2010-09-29
申请号：EP05723406
申请日：2005-02-18
申请人： GRANDIS INC
发明人： NGUYEN PAUL P , HUAI YIMING , DIAO ZHITAO , ALBERT FRANK
IPC分类号： H01L43/00 , G11B5/673 , G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01F41/30 , H01H9/00 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/16 , H01F10/3263 , H01F10/3272 , H01F41/303

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