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    • 4. 发明申请
    • CURRENT CONFINED PASS LAYER FOR MAGNETIC ELEMENTS UTILIZING SPIN-TRANSFER AND AN MRAM DEVICE USING SUCH MAGNETIC ELEMENTS
    • 使用旋转元件的磁性元件的当前配置通道层和使用这种磁性元件的MRAM器件
    • WO2005029497A3
    • 2005-10-06
    • PCT/US2004030677
    • 2004-09-17
    • GRANDIS INCHUAI YIMINGNGUYEN PAUL PALBERT FRANK
    • HUAI YIMINGNGUYEN PAUL PALBERT FRANK
    • G11C11/15G11C11/16G11C11/00
    • G11C11/16
    • A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least one pinned layer (110), a free layer (130), and a current confined layer (120) residing between the pinned layer (110) and the free layer (130). The pinned layer (110) is ferromagnetic and has a first magnetization. The current confined layer (120) has at least one channel in an insulating matrix. The channel are conductive and extend through the current confined layer (120). The free layer (130) is ferromagnetic and has a second magnetization. The pinned layer (110), the free layer (130), and the current confined layer (120) are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element (100) also include other layers, including layers for spin valve (spin tunneling junction, dual spin valve, dual spin tunneling junction and dual spin valve/tunnel structure.
    • 公开了一种用于提供和磁性元件的方法和系统。 在一个方面,磁性元件包括至少一个固定层(110),自由层(130)和驻留在被钉扎层(110)和自由层(130)之间的电流限制层(120)。 被钉扎层(110)是铁磁性的并且具有第一磁化强度。 电流限制层(120)在绝缘矩阵中具有至少一个通道。 通道是导电的并延伸穿过电流限制层(120)。 自由层(130)是铁磁性的并具有第二磁化强度。 被钉扎层(110),自由层(130)和电流限制层(120)被配置为允许使用自旋转移来切换自由层的磁化。 磁性元件(100)还包括其它层,包括用于自旋阀(自旋隧道结,双自旋阀,双自旋隧道结和双自旋阀/隧道结构)的层。
    • 6. 发明申请
    • CURRENT CONFINED PASS LAYER FOR MAGNETIC ELEMENTS UTILIZING SPIN-TRANSFER AND AN MRAM DEVICE USING SUCH MAGNETIC ELEMENTS
    • 使用旋转元件的磁性元件的当前配置通道层和使用这种磁性元件的MRAM器件
    • WO2005029497A2
    • 2005-03-31
    • PCT/US2004/030677
    • 2004-09-17
    • GRANDIS, INC.HUAI, YimingNGUYEN, Paul, P.ALBERT, Frank
    • HUAI, YimingNGUYEN, Paul, P.ALBERT, Frank
    • G11C
    • G11C11/16
    • A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).
    • 公开了一种用于提供和磁性元件的方法和系统。 在一个方面,磁性元件至少包括钉扎层,自由层和驻留在被钉扎层和自由层之间的电流限制层。 被钉扎层是铁磁性的并且具有第一磁化强度。 电流限制层在绝缘矩阵中具有至少一个通道。 通道是导电的并延伸通过电流限制层。 自由层是铁磁性的并且具有第二磁化强度。 被钉扎层,自由层和电流限制层被配置为允许使用自旋转移来切换自由层的磁化。 磁性元件还可以包括其它层,包括用于自旋阀的层,自旋隧道结,双自旋阀,双自旋隧道结,以及双自旋阀/隧道结构, 。