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1. 发明申请

WO2006063007A2 METHOD AND SYSTEM FOR PROVIDING A HIGHLY TEXTURED MAGNETORESISTANCE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：提供高纹理磁阻元件和磁记忆的方法和系统
公开(公告)号：WO2006063007A2
公开(公告)日：2006-06-15
申请号：PCT/US2005044180
申请日：2005-12-06
申请人： GRANDIS INC , PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
发明人： PAKALA MAHENDRA , VALET THIERRY , HUAI YIMING , DIAO ZHITAO
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01F41/302 , H01F41/325
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括在被钉扎层和自由层之间提供钉扎层，自由层和间隔层。间隔层是绝缘的并且具有有序晶体结构。间隔层还被构造成允许穿过间隔层的隧穿。在一个方面，自由层由相对于间隔层具有特定晶体结构和纹理的单个磁性层组成。在另一方面，自由层由两个子层组成，第一子层相对于间隔层具有特定的晶体结构和纹理，而第二子层具有较低的力矩。在另一方面，该方法和系统还包括提供非磁性的第二被钉扎层和第二间隔层，并且位于自由层和第二钉扎层之间。磁性元件被配置为当写入电流通过磁性元件时由于自旋转移而允许自由层被切换。

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