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1. 发明申请

WO2003019108A1 METHOD AND APPARATUS FOR THE ULTRASONIC ACTUATION OF THE CANTILEVER OF A PROBE-BASED INSTRUMENT 审中-公开
标题翻译：用于基于探针的仪器的超声波超声波驱动的方法和装置
公开(公告)号：WO2003019108A1
公开(公告)日：2003-03-06
申请号：PCT/US2002/026215
申请日：2002-08-19
申请人： GEORGIA TECH RESEARCH CORPORATION , XEROX CORPORATION
发明人： DEGERTEKIN, Levent, F. , ONARAN, Abidin, Guclu , HADIMIOGLU, Babur, B.
IPC分类号： G01B7/34
CPC分类号： G01Q30/14 , G01N29/0681 , G01N29/2456 , G01N29/346 , G01N2291/02827 , G01N2291/0427 , G01Q60/32 , G01S17/08 , Y10S977/872
摘要： The cantilever of a probe-based metrology instrument such as an AFM is deflected by directing a beam of ultrasonic energy at the cantilever to apply ultrasonically generated acoustic radiation pressure to the cantilever. The energy is generated by an ultrasonic actuator such as a ZnO transducer driven by a power source such an RF signal generator. The transmitted beam preferably is shaped by focusing, collimation, or the like so that it impinges at least primarily on a region of interest of the cantilever such as the free end. The ultrasonic actuator produces a much better controlled force on the cantilever than can be achieved through t he use of a traditional piezoelectric actuator and, accordingly, produces a response free of spurious effects (at least when the cantilever is operating in liquid). It also has a frequency bandwidth in the MHz range.
摘要翻译：基于探针的计量仪器（例如AFM）的悬臂通过在悬臂处引导超声能量束来对悬臂施加超声产生的声辐射压力而被偏转。能量由诸如由诸如RF信号发生器的电源驱动的ZnO换能器的超声波致动器产生。透射光束优选地通过聚焦，准直等成形，使得其至少主要照射在诸如自由端的悬臂的感兴趣区域上。超声波致动器在悬臂上产生比通过使用传统的压电致动器可以实现的更好的控制力，并且因此产生没有假效应的响应（至少当悬臂在液体中操作时）。它还具有MHz范围内的频率带宽。

2. 发明申请

WO2005077012A2 CMUT DEVICES AND FABRICATION METHODS 审中-公开
标题翻译： CMUT设备和制造方法
公开(公告)号：WO2005077012A2
公开(公告)日：2005-08-25
申请号：PCT/US2005/003898
申请日：2005-02-07
申请人： GEORGIA TECH RESEARCH CORPORATION , DEGERTEKIN, Levent, F. , MCLEAN, Jeffrey, John , KNIGHT, Joshua, Glenn
发明人： DEGERTEKIN, Levent, F. , MCLEAN, Jeffrey, John , KNIGHT, Joshua, Glenn
IPC分类号： A61B8/02 , A61B8/12 , B06B1/02 , H01L21/00
CPC分类号： G01N29/2406 , B06B1/0292
摘要： Fabrication methods for capacitive-micromachined ultrasound transducers ("cMUT") and cMUT imaging array systems are provided. cMUT devices fabricated from low process temperatures are also provided. In an exemplary embodiment, a process temperature can be less than approximately 300 degrees Celsius. A cMUT fabrication method generally comprises depositing and patterning materials on a substrate (400). The substrate (400) can be silicon, transparent, other materials. In an exemplary embodiment, multiple metal layers (405, 410, 415) can be deposited and patterned onto the substrate (400); several membrane layers (420, 435, 445) can be deposited over the multiple metal layers (405, 410, 415); and additional metal layers (425, 430) can be disposed within the several membrane layers (420, 435, 445). The second metal layer (410) is preferably resistant to etchants used to etch the third metal layer (415) when forming a cavity (447). Other embodiments are also claimed and described.
摘要翻译：提供了电容式微机械超声换能器（“cMUT”）和cMUT成像阵列系统的制造方法。还提供了由低工艺温度制造的cMUT器件。在示例性实施例中，处理温度可以小于约300摄氏度。 cMUT制造方法通常包括在衬底（400）上沉积和图案化材料。衬底（400）可以是硅，透明的，其它材料。在示例性实施例中，可以将多个金属层（405,410,415）沉积并图案化到衬底（400）上; 可以在多个金属层（405,410,415）上沉积几个膜层（420,435,455）; 并且附加的金属层（425,430）可以设置在几个膜层（420,435,445）内。当形成空腔（447）时，第二金属层（410）优选地耐用于蚀刻第三金属层（415）的蚀刻剂。还要求保护和描述其它实施例。

3. 发明申请

WO2011140082A1 CMUT DEVICES AND FABRICATION METHODS 审中-公开
标题翻译： CMUT设备和制造方法
公开(公告)号：WO2011140082A1
公开(公告)日：2011-11-10
申请号：PCT/US2011/034989
申请日：2011-05-03
申请人： GEORGIA TECH RESEARCH CORPORATION , DEGERTEKIN, Levent, F. , GURUN, Gokce , ZAHORIAN, Jaime , HOCHMAN, Michael
发明人： DEGERTEKIN, Levent, F. , GURUN, Gokce , ZAHORIAN, Jaime , HOCHMAN, Michael
IPC分类号： A61B8/14
CPC分类号： H01L23/481 , A61B8/12 , A61B8/4494 , B06B1/0292 , H01L21/76898 , H01L2924/0002 , H01L2924/00
摘要： Capacitive micromachined ultrasonic transducer ("CMUT") devices and fabrication methods are provided. The CMUT devices can include integrated circuit devices utilizing direct connections to various CMOS electronic components. The use of integrated connections can reduce overall package size and improve functionality for use in ultrasonic imaging applications. CMUT devices can also be manufactured on multiple silicon chip layers with each layer connected utilizing through silicon vias (TSVs). External power connections can be provided if high biasing voltages are required. Forward and side looking CMUT arrays can be manufactured for use in a variety of ultrasound technologies.
摘要翻译：提供电容式微加工超声波换能器（“CMUT”）装置及其制造方法。 CMUT设备可以包括利用与各种CMOS电子部件的直接连接的集成电路器件。使用集成连接可以减少整体封装尺寸并提高用于超声成像应用的功能。也可以在多个硅芯片层上制造CMUT器件，每个层通过硅通孔（TSV）连接。如果需要高偏置电压，可以提供外部电源连接。正面和侧面的CMUT阵列可以制造用于各种超声技术。

4. 发明公开

EP1713399A2 CMUT DEVICES AND FABRICATION METHODS 审中-公开
标题翻译： CMUT器件和方法
公开(公告)号：EP1713399A2
公开(公告)日：2006-10-25
申请号：EP05713072.6
申请日：2005-02-07
申请人： GEORGIA TECH RESEARCH CORPORATION
发明人： DEGERTEKIN, Levent, F. , MCLEAN, Jeffrey, John , KNIGHT, Joshua, Glenn
IPC分类号： A61B8/02 , A61B8/12
CPC分类号： G01N29/2406 , B06B1/0292
摘要： Fabrication methods for capacitive-micromachined ultrasound transducers ('cMUT') and cMUT imaging array systems are provided. cMUT devices fabricated from low process temperatures are also provided. In an exemplary embodiment, a process temperature can be less than approximately 300 degrees Celsius. A cMUT fabrication method generally comprises depositing and patterning materials on a substrate (400). The substrate (400) can be silicon, transparent, other materials. In an exemplary embodiment, multiple metal layers (405, 410, 415) can be deposited and patterned onto the substrate (400); several membrane layers (420, 435, 445) can be deposited over the multiple metal layers (405, 410, 415); and additional metal layers (425, 430) can be disposed within the several membrane layers (420, 435, 445). The second metal layer (410) is preferably resistant to etchants used to etch the third metal layer (415) when forming a cavity (447). Other embodiments are also claimed and described.

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