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    • 2. 发明申请
    • CMUT DEVICES AND FABRICATION METHODS
    • CMUT设备和制造方法
    • WO2005077012A2
    • 2005-08-25
    • PCT/US2005/003898
    • 2005-02-07
    • GEORGIA TECH RESEARCH CORPORATIONDEGERTEKIN, Levent, F.MCLEAN, Jeffrey, JohnKNIGHT, Joshua, Glenn
    • DEGERTEKIN, Levent, F.MCLEAN, Jeffrey, JohnKNIGHT, Joshua, Glenn
    • A61B8/02A61B8/12B06B1/02H01L21/00
    • G01N29/2406B06B1/0292
    • Fabrication methods for capacitive-micromachined ultrasound transducers ("cMUT") and cMUT imaging array systems are provided. cMUT devices fabricated from low process temperatures are also provided. In an exemplary embodiment, a process temperature can be less than approximately 300 degrees Celsius. A cMUT fabrication method generally comprises depositing and patterning materials on a substrate (400). The substrate (400) can be silicon, transparent, other materials. In an exemplary embodiment, multiple metal layers (405, 410, 415) can be deposited and patterned onto the substrate (400); several membrane layers (420, 435, 445) can be deposited over the multiple metal layers (405, 410, 415); and additional metal layers (425, 430) can be disposed within the several membrane layers (420, 435, 445). The second metal layer (410) is preferably resistant to etchants used to etch the third metal layer (415) when forming a cavity (447). Other embodiments are also claimed and described.
    • 提供了电容式微机械超声换能器(“cMUT”)和cMUT成像阵列系统的制造方法。 还提供了由低工艺温度制造的cMUT器件。 在示例性实施例中,处理温度可以小于约300摄氏度。 cMUT制造方法通常包括在衬底(400)上沉积和图案化材料。 衬底(400)可以是硅,透明的,其它材料。 在示例性实施例中,可以将多个金属层(405,410,415)沉积并图案化到衬底(400)上; 可以在多个金属层(405,410,415)上沉积几个膜层(420,435,455); 并且附加的金属层(425,430)可以设置在几个膜层(420,435,445)内。 当形成空腔(447)时,第二金属层(410)优选地耐用于蚀刻第三金属层(415)的蚀刻剂。 还要求保护和描述其它实施例。