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    • 1. 发明授权
    • Optical analog-to-digital converter
    • 光模数转换器
    • US07564387B1
    • 2009-07-21
    • US12039931
    • 2008-02-29
    • G. Allen VawterJames RaringErik J. Skogen
    • G. Allen VawterJames RaringErik J. Skogen
    • H03M1/00
    • G02F7/00
    • An optical analog-to-digital converter (ADC) is disclosed which converts an input optical analog signal to an output optical digital signal at a sampling rate defined by a sampling optical signal. Each bit of the digital representation is separately determined using an optical waveguide interferometer and an optical thresholding element. The interferometer uses the optical analog signal and the sampling optical signal to generate a sinusoidally-varying output signal using cross-phase-modulation (XPM) or a photocurrent generated from the optical analog signal. The sinusoidally-varying output signal is then digitized by the thresholding element, which includes a saturable absorber or at least one semiconductor optical amplifier, to form the optical digital signal which can be output either in parallel or serially.
    • 公开了一种光学模拟 - 数字转换器(ADC),其以由采样光信号限定的采样速率将输入光模拟信号转换为输出光数字信号。 使用光波导干涉仪和光学阈值元件分别确定数字表示的每一位。 干涉仪使用光模拟信号和采样光信号,使用交叉相位调制(XPM)或从光模拟信号产生的光电流产生正弦变化的输出信号。 然后,正弦变化的输出信号由包括可饱和吸收器或至少一个半导体光放大器的阈值元件数字化,以形成可以并行或串行输出的光数字信号。
    • 3. 发明授权
    • Optical XOR gate
    • 光学异或门
    • US08582931B1
    • 2013-11-12
    • US12973470
    • 2010-12-20
    • G. Allen Vawter
    • G. Allen Vawter
    • G02B6/12
    • G02F3/00G02F1/3133G02F2001/0157
    • An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 μm.
    • 光学XOR门由基板上的两组光波导器件形成为光子集成电路(PIC),每组光波导器件包括与波导光电检测器串联电连接的电吸收调制器。 光学异或门使用两个数字光输入来产生XOR功能的数字光输出。 光XOR栅极可以由外延沉积在III-V化合物半导体衬底上的III-V族化合物半导体层形成,并在0.8-2.0μm的范围内工作。
    • 5. 发明授权
    • Integrated resonant micro-optical gyroscope and method of fabrication
    • 集成谐振微光陀螺仪及其制作方法
    • US07106448B1
    • 2006-09-12
    • US10780799
    • 2004-02-17
    • G. Allen VawterWalter J. ZubrzyckiJunpeng GuoCharles T. Sullivan
    • G. Allen VawterWalter J. ZubrzyckiJunpeng GuoCharles T. Sullivan
    • G01C19/72G02B6/02
    • G02B6/42G01C19/72G01C19/727G02B6/12004G02B2006/12107G02B2006/12142G02B2006/12176G02B2006/12178
    • An integrated optic gyroscope is disclosed which is based on a photonic integrated circuit (PIC) having a bidirectional laser source, a pair of optical waveguide phase modulators and a pair of waveguide photodetectors. The PIC can be connected to a passive ring resonator formed either as a coil of optical fiber or as a coiled optical waveguide. The lasing output from each end of the bidirectional laser source is phase modulated and directed around the passive ring resonator in two counterpropagating directions, with a portion of the lasing output then being detected to determine a rotation rate for the integrated optical gyroscope. The coiled optical waveguide can be formed on a silicon, glass or quartz substrate with a silicon nitride core and a silica cladding, while the PIC includes a plurality of III–V compound semiconductor layers including one or more quantum well layers which are disordered in the phase modulators and to form passive optical waveguides.
    • 公开了一种基于具有双向激光源的光子集成电路(PIC),一对光波导相位调制器和一对波导光电探测器的集成光学陀螺仪。 PIC可以连接到形成为光纤线圈或作为卷绕的光波导的无源环形谐振器。 来自双向激光源的每端的激光输出相位调制并且在两个反向传播方向上围绕无源环形谐振器引导,然后检测激光输出的一部分以确定集成光学陀螺仪的旋转速率。 卷绕的光波导可以在具有氮化硅芯和二氧化硅包层的硅,玻璃或石英衬底上形成,而PIC包括多个III-V化合物半导体层,包括一个或多个量子阱层,其在 相位调制器和形成无源光波导。
    • 7. 发明授权
    • Optical data latch
    • 光数据锁存
    • US07787719B1
    • 2010-08-31
    • US12558025
    • 2009-09-11
    • G. Allen Vawter
    • G. Allen Vawter
    • G02B6/12
    • H03K19/14H03K3/42H03K19/20
    • An optical data latch is formed on a substrate from a pair of optical logic gates in a cross-coupled arrangement in which optical waveguides are used to couple an output of each gate to an photodetector input of the other gate. This provides an optical bi-stability which can be used to store a bit of optical information in the latch. Each optical logic gate, which can be an optical NOT gate (i.e. an optical inverter) or an optical NOR gate, includes a waveguide photodetector electrically connected in series with a waveguide electroabsorption modulator. The optical data latch can be formed on a III-V compound semiconductor substrate (e.g. an InP or GaAs substrate) from III-V compound semiconductor layers. A number of optical data latches can be cascaded to form a clocked optical data shift register.
    • 光学数据锁存器在交叉耦合布置中从一对光逻辑门形成在衬底上,其中光波导用于将每个栅极的输出耦合到另一个栅极的光电检测器输入端。 这提供了光学双稳定性,其可用于在锁存器中存储一些光信息。 可以是光学非门(即光反向器)或光或非门的每个光学逻辑门包括与波导电吸收调制器串联电连接的波导光电检测器。 光学数据锁存器可以由III-V族化合物半导体层形成在III-V族化合物半导体衬底(例如InP或GaAs衬底)上。 可以级联多个光学数据锁存器以形成时钟光学数据移位寄存器。
    • 9. 发明授权
    • Light sources based on semiconductor current filaments
    • 基于半导体电流灯丝的光源
    • US06504859B1
    • 2003-01-07
    • US09489243
    • 2000-01-21
    • Fred J. ZutavernGuillermo M. LoubrielMalcolm T. ButtramAlan MarWesley D. HelgesonMartin W. O'MalleyHarold P. HjalmarsonAlbert G. BacaWeng W. ChowG. Allen Vawter
    • Fred J. ZutavernGuillermo M. LoubrielMalcolm T. ButtramAlan MarWesley D. HelgesonMartin W. O'MalleyHarold P. HjalmarsonAlbert G. BacaWeng W. ChowG. Allen Vawter
    • H01S500
    • H01S5/04H01S5/0425H01S5/3013
    • The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.
    • 本发明提供一种能够产生高峰值功率输出而不是注入,电子束或光泵浦的新型半导体光源。 本发明能够产生高质量的相干或非相干光发射。 不同于基于p-n结的常规半导体激光器,本发明基于当前的灯丝。 本发明提供一种由当前灯丝内的电子 - 空穴等离子体形成的光源。 电子空穴等离子体可以是几百微米的直径和几厘米长。 目前的灯丝可以光学地或与电子束一起启动,但是可以在大的绝缘区域上被电泵浦。 可以在高增益光导半导体开关中产生当前的灯丝。 由本发明提供的光源具有潜在的大体积,因此具有从单个(相干)半导体激光器可获得的每脉冲潜在的大能量或峰值功率。 像其他半导体激光器一样,这些光源将发射在带隙能量附近的波长(对于GaAs 875nm或近红外线)。 本发明的即时潜在应用包括高能量,短脉冲,紧凑,低成本的激光器和其它非相干光源。