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1. 发明授权

US06504859B1 Light sources based on semiconductor current filaments 有权
标题翻译：基于半导体电流灯丝的光源
公开(公告)号：US06504859B1
公开(公告)日：2003-01-07
申请号：US09489243
申请日：2000-01-21
申请人： Fred J. Zutavern , Guillermo M. Loubriel , Malcolm T. Buttram , Alan Mar , Wesley D. Helgeson , Martin W. O'Malley , Harold P. Hjalmarson , Albert G. Baca , Weng W. Chow , G. Allen Vawter
发明人： Fred J. Zutavern , Guillermo M. Loubriel , Malcolm T. Buttram , Alan Mar , Wesley D. Helgeson , Martin W. O'Malley , Harold P. Hjalmarson , Albert G. Baca , Weng W. Chow , G. Allen Vawter
IPC分类号： H01S500
CPC分类号： H01S5/04 , H01S5/0425 , H01S5/3013
摘要： The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.
摘要翻译：本发明提供一种能够产生高峰值功率输出而不是注入，电子束或光泵浦的新型半导体光源。本发明能够产生高质量的相干或非相干光发射。不同于基于p-n结的常规半导体激光器，本发明基于当前的灯丝。本发明提供一种由当前灯丝内的电子 - 空穴等离子体形成的光源。电子空穴等离子体可以是几百微米的直径和几厘米长。目前的灯丝可以光学地或与电子束一起启动，但是可以在大的绝缘区域上被电泵浦。可以在高增益光导半导体开关中产生当前的灯丝。由本发明提供的光源具有潜在的大体积，因此具有从单个（相干）半导体激光器可获得的每脉冲潜在的大能量或峰值功率。像其他半导体激光器一样，这些光源将发射在带隙能量附近的波长（对于GaAs 875nm或近红外线）。本发明的即时潜在应用包括高能量，短脉冲，紧凑，低成本的激光器和其它非相干光源。

2. 发明授权

US06248992B1 High gain photoconductive semiconductor switch having tailored doping profile zones 有权
标题翻译：高增益光导半导体开关具有定制的掺杂分布区
公开(公告)号：US06248992B1
公开(公告)日：2001-06-19
申请号：US09336340
申请日：1999-06-18
申请人： Albert G. Baca , Guillermo M. Loubriel , Alan Mar , Fred J Zutavern , Harold P. Hjalmarson , Andrew A. Allerman , Thomas E. Zipperian , Martin W. O'Malley , Wesley D. Helgeson , Gary J. Denison , Darwin J. Brown , Charles T. Sullivan , Hong Q. Hou
发明人： Albert G. Baca , Guillermo M. Loubriel , Alan Mar , Fred J Zutavern , Harold P. Hjalmarson , Andrew A. Allerman , Thomas E. Zipperian , Martin W. O'Malley , Wesley D. Helgeson , Gary J. Denison , Darwin J. Brown , Charles T. Sullivan , Hong Q. Hou
IPC分类号： H01J4014
CPC分类号： H01L31/09
摘要： A photoconductive semiconductor switch with tailored doping profile zones beneath and extending laterally from the electrical contacts to the device. The zones are of sufficient depth and lateral extent to isolate the contacts from damage caused by the high current filaments that are created in the device when it is turned on. The zones may be formed by etching depressions into the substrate, then conducting epitaxial regrowth in the depressions with material of the desired doping profile. They may be formed by surface epitaxy. They may also be formed by deep diffusion processes. The zones act to reduce the energy density at the contacts by suppressing collective impact ionization and formation of filaments near the contact and by reducing current intensity at the contact through enhanced current spreading within the zones.
摘要翻译：光电导半导体开关，其具有定制的掺杂分布区域，并且从电触点横向延伸到器件。这些区域具有足够的深度和横向范围，以将接触件隔离开，因为在开启设备时产生的高电流丝线所引起的损坏。可以通过将凹陷蚀刻到衬底中，然后在具有所需掺杂分布的材料的凹陷中进行外延再生长来形成区域。它们可以通过表面外延形成。它们也可以由深扩散过程形成。这些区域通过抑制接触点附近的集体冲击电离和细丝形成以及通过在区域内增强的电流扩散来减少接触处的电流强度来降低触点处的能量密度。

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