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1. 发明授权

US5349601A Unidirectional ring lasers 失效
标题翻译：单向环形激光器
公开(公告)号：US5349601A
公开(公告)日：1994-09-20
申请号：US123835
申请日：1993-09-20
申请人： John P. Hohimer , David C. Craft
发明人： John P. Hohimer , David C. Craft
IPC分类号： H01S3/063 , H01S3/083
CPC分类号： H01S5/026 , H01S5/1028 , H01S5/1071
摘要： Unidirectional ring lasers formed by integrating nonreciprocal optical elements into the resonant ring cavity. These optical elements either attenuate light traveling in a nonpreferred direction or amplify light traveling in a preferred direction. In one preferred embodiment the resonant cavity takes the form of a circle with an S-shaped crossover waveguide connected to two points on the interior of the cavity such that light traveling in a nonpreferred direction is diverted from the cavity into the crossover waveguide and reinjected out of the other end of the crossover waveguide into the cavity as light traveling in the preferred direction.
摘要翻译：通过将不可逆光学元件集成到谐振环腔中形成的单向环形激光器。这些光学元件可以衰减以非优选方向行进的光或放大沿优选方向行进的光。在一个优选实施例中，谐振腔采用具有S形交叉波导的圆形形式，连接到空腔内部的两个点，使得以非推荐方向行进的光从空腔转移到交叉波导中并重新注入的交叉波导的另一端插入到空腔中，作为沿优选方向行进的光。

2. 发明授权

US5319659A Semiconductor diode laser having an intracavity spatial phase controller for beam control and switching 失效
标题翻译：具有用于光束控制和切换的腔内空间相位控制器的半导体二极管激光器
公开(公告)号：US5319659A
公开(公告)日：1994-06-07
申请号：US883315
申请日：1992-05-14
申请人： John P. Hohimer
发明人： John P. Hohimer
IPC分类号： H01S5/042 , H01S5/062 , H01S5/0625 , H01S5/20 , H01S3/19
CPC分类号： H01S5/0425 , H01S5/0625 , H01S5/06243 , H01S5/2036
摘要： A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.
摘要翻译：公开了具有腔内空间相位控制器的大功率广域半导体激光器。当制造半导体激光器时，通过图案化电接触金属化层，容易地形成集成的腔内空间相位控制器。该空间相位控制器将这种激光器的通常宽的远场发射光束以超过400mW的脉冲输出功率变化为单裂纹近衍射受限束。存在用于相位控制器的两种操作模式，即热和增益操作模式，当切换操作模式时允许转向和切换光束，并且发射光束可以例如在1.4度的范围内被扫描或切换8度。可以将多于一个空间相位控制器集成到激光器结构中。

3. 发明授权

US06392144B1 Micromechanical die attachment surcharge 有权
标题翻译：微机械模具附件结构
公开(公告)号：US06392144B1
公开(公告)日：2002-05-21
申请号：US09516666
申请日：2000-03-01
申请人： William F. Filter , John P. Hohimer
发明人： William F. Filter , John P. Hohimer
IPC分类号： H01L2302
CPC分类号： B81B7/0077 , B81C3/002 , B81C2203/058 , H01L23/13 , H01L2223/6622 , H01L2924/0002 , H03H9/1057 , H01L2924/00
摘要： An attachment structure is disclosed for attaching a die to a supporting substrate without the use of adhesives or solder. The attachment structure, which can be formed by micromachining, functions purely mechanically in utilizing a plurality of shaped pillars (e.g. round, square or polygonal and solid, hollow or slotted) that are formed on one of the die or supporting substrate and which can be urged into contact with various types of mating structures including other pillars, a deformable layer or a plurality of receptacles that are formed on the other of the die or supporting substrate, thereby forming a friction bond that holds the die to the supporting substrate. The attachment structure can further include an alignment structure for precise positioning of the die and supporting substrate to facilitate mounting the die to the supporting substrate. The attachment structure has applications for mounting semiconductor die containing a microelectromechanical (MEM) device, a microsensor or an integrated circuit (IC), and can be used to form a multichip module. The attachment structure is particularly useful for mounting die containing released MEM devices since these devices are fragile and can otherwise be damaged or degraded by adhesive or solder mounting.
摘要翻译：公开了一种用于在不使用粘合剂或焊料的情况下将模具附接到支撑基板的附接结构。可以通过微机械加工形成的附接结构通过利用多个成形的支柱（例如圆形，正方形或多边形和固体，中空或开槽）来实现机械地起作用，其形成在模具或支撑基板之一上，并且可以是促使其与各种类型的配合结构接触，包括其他柱，可变形层或多个容器，其形成在模具或支撑衬底的另一个上，从而形成将模具保持在支撑衬底上的摩擦接合。附接结构还可以包括用于精确定位模具和支撑衬底以便于将模具安装到支撑衬底的对准结构。附接结构具有用于安装包含微机电（MEM）器件，微传感器或集成电路（IC）的半导体管芯的应用，并且可用于形成多芯片模块。安装结构对于安装具有释放的MEM装置的模具特别有用，因为这些装置是脆弱的，否则可能由于粘合剂或焊料安装而被损坏或劣化。

4. 发明授权

US5463649A Monolithically integrated solid state laser and waveguide using spin-on glass 失效
标题翻译：使用旋涂玻璃的单片式固态激光器和波导
公开(公告)号：US5463649A
公开(公告)日：1995-10-31
申请号：US102907
申请日：1993-08-06
申请人： Carol I. H. Ashby , John P. Hohimer , Daniel R. Neal , G. Allen Vawter
发明人： Carol I. H. Ashby , John P. Hohimer , Daniel R. Neal , G. Allen Vawter
IPC分类号： H01S3/063 , H01S3/067 , H01S3/0941 , H01S3/109 , H01S3/113 , H01S3/06 , H01S3/17
CPC分类号： H01S3/063 , H01S3/0941 , H01S3/025 , H01S3/0635 , H01S3/0675 , H01S3/09408 , H01S3/1095 , H01S3/113
摘要： A monolithically integrated photonic circuit combining a semiconductor source of excitation light with an optically active waveguide formed on the substrate. The optically active waveguide is preferably formed of a spin-on glass to which are added optically active materials which can enable lasing action, optical amplification, optical loss, or frequency conversion in the waveguide, depending upon the added material.
摘要翻译：将激发光的半导体源与在衬底上形成的光学有源波导组合的单片集成光电子电路。光学有源波导优选地由旋涂玻璃形成，根据所添加的材料，旋涂玻璃上添加了光学活性材料，其可以使波导中的激光作用，光放大，光损耗或频率转换。

5. 发明授权

US5998781A Apparatus for millimeter-wave signal generation 失效
标题翻译：毫米波信号产生装置
公开(公告)号：US5998781A
公开(公告)日：1999-12-07
申请号：US846370
申请日：1997-04-30
申请人： G. Allen Vawter , Vincent M. Hietala , John C. Zolper , Alan Mar , John P. Hohimer
发明人： G. Allen Vawter , Vincent M. Hietala , John C. Zolper , Alan Mar , John P. Hohimer
IPC分类号： H03C1/34 , G01J1/04
CPC分类号： H03C1/34
摘要： An opto-electronic integrated circuit (OEIC) apparatus is disclosed for generating an electrical signal at a frequency .gtoreq.10 GHz. The apparatus, formed on a single substrate, includes a semiconductor ring laser for generating a continuous train of mode-locked lasing pulses and a high-speed photodetector for detecting the train of lasing pulses and generating the electrical signal therefrom. Embodiments of the invention are disclosed with an active waveguide amplifier coupling the semiconductor ring laser and the high-speed photodetector. The invention has applications for use in OEICs and millimeter-wave monolithic integrated circuits (MMICs).
摘要翻译：公开了一种用于产生频率≥10GHz的电信号的光电集成电路（OEIC）装置。形成在单个基板上的装置包括用于产生连续的锁模激光脉冲序列的半导体环形激光器和用于检测激光脉冲串并从其产生电信号的高速光电探测器。公开了耦合半导体环形激光器和高速光电检测器的有源波导放大器的本发明的实施例。本发明适用于OEIC和毫米波单片集成电路（MMIC）。

6. 发明授权

US5398256A Interferometric ring lasers and optical devices 失效
标题翻译：干涉环形激光器和光学器件
公开(公告)号：US5398256A
公开(公告)日：1995-03-14
申请号：US61400
申请日：1993-05-10
申请人： John P. Hohimer , David C. Craft
发明人： John P. Hohimer , David C. Craft
IPC分类号： H01S5/026 , H01S5/10 , H01S3/083
CPC分类号： H01S5/1071 , H01S5/026 , H01S5/1003 , H01S5/1021
摘要： Two ring diode lasers are optically coupled together to produce tunable, stable output through a Y-junction output coupler which may also be a laser diode or can be an active waveguide. These devices demonstrate a sharp peak in light output with an excellent side-mode-rejection ratio. The rings can also be made of passive or active waveguide material. With additional rings the device is a tunable optical multiplexer/demultiplexer.
摘要翻译：两个环形二极管激光器光学耦合在一起，以通过Y结输出耦合器产生可调谐，稳定的输出，其也可以是激光二极管，或者可以是有源波导。这些器件在光输出中呈现出尖锐的峰值，具有优异的侧模抑制比。这些环也可以由无源或有源波导材料制成。使用附加环，该设备是可调谐的光复用器/解复用器。

7. 发明授权

US4995047A Integrated injection-locked semiconductor diode laser 失效
标题翻译：集成注入锁定半导体二极管激光器
公开(公告)号：US4995047A
公开(公告)日：1991-02-19
申请号：US400621
申请日：1989-08-30
申请人： G. Ronald Hadley , John P. Hohimer , Adelbert Owyoung
发明人： G. Ronald Hadley , John P. Hohimer , Adelbert Owyoung
IPC分类号： H01S5/062 , H01S5/40
CPC分类号： H01S5/4031 , H01S5/4006 , H01S5/06243
摘要： A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.
摘要翻译：连续波集成注入锁定大功率二极管激光器阵列具有片上独立控制的主激光器。集成注入锁定的大功率二极管激光器阵列能够在高达125 mW（总共250 mW）的单面功率水平下，在单个近衍射限制输出光束中连续波浪激光。通过改变主激光器的电流，获得0.5度角的阵列发射的电子转向。主激光器通过后面的反射将激光束注入到从阵列中。

8. 发明授权

US4965806A Semiconductor laser devices having lateral refractive index tailoring 失效
$Semiconductor laser devices having lateral refractive index tailoring$
标题翻译：半导体激光器件具有侧向折射率定制
公开(公告)号：US4965806A
公开(公告)日：1990-10-23
申请号：US366398
申请日：1989-06-15
申请人： Carol I. H. Ashby , G. Ronald Hadley , John P. Hohimer , Adelbert Owyoung
发明人： Carol I. H. Ashby , G. Ronald Hadley , John P. Hohimer , Adelbert Owyoung
IPC分类号： H01S5/026 , H01S5/06 , H01S5/068 , H01S5/0683 , H01S5/20 , H01S5/40
CPC分类号： H01S5/20 , H01S5/0261 , H01S5/068 , H01S5/4031 , H01S5/0612 , H01S5/06804 , H01S5/06837 , H01S5/2036
摘要： A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.
摘要翻译：广域半导体激光二极管包括插入在上包层和下包层之间的有源激光区域，激光二极管还包括用于可控地改变二极管的横向折射率分布的结构，以大体上补偿在操作期间结加热的影响。在所公开的实施例中，控制结构包括平行于有源区域布置的电阻加热带或非辐射线性结。另一实施例公开了一种由注入或扩散的掺杂杂质选择性地紊乱的多层上覆层区域。另一个实施例公开了一种可变厚度的上包层，其形状为凸起并且围绕活动区域的中心轴线对称设置。本发明的教导也被证明适用于半导体激光二极管阵列。

9. 发明授权

US4751705A Single-element optical injection locking of diode-laser arrays 失效
标题翻译：二极管激光器阵列的单元光注入锁定
公开(公告)号：US4751705A
公开(公告)日：1988-06-14
申请号：US916344
申请日：1986-10-07
申请人： G. Ronald Hadley , John P. Hohimer , Adelbert Owyoung
发明人： G. Ronald Hadley , John P. Hohimer , Adelbert Owyoung
IPC分类号： H01S5/00 , H01S5/062 , H01S5/40 , H01S3/098
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/4006 , H01S5/06243 , H01S5/4075
摘要： By optically injecting a single end-element of a semiconductor laser array, both the spatial and spectral emission characteristics of the entire laser array is controlled. With the output of the array locked, the far-field emission angle of the array is continuously scanned over several degrees by varying the injection frequency.
摘要翻译：通过光学注入半导体激光器阵列的单个端元件，可以控制整个激光器阵列的空间和光谱发射特性。随着阵列的输出被锁定，阵列的远场发射角通过改变喷射频率在数度上连续扫描。

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