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1. 再颁专利

USRE39123E1 Plating apparatus 有权
公开(公告)号：USRE39123E1
公开(公告)日：2006-06-13
申请号：US10187801
申请日：1999-11-26
申请人： Fumio Kuriyama , Hiroyuki Ueyama , Junitsu Yamakawa , Kenichi Suzuki , Atsushi Chono
发明人： Fumio Kuriyama , Hiroyuki Ueyama , Junitsu Yamakawa , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D21/12 , C25B15/00 , C25B7/00
CPC分类号： C25D21/14 , C25D17/001 , C25D21/16 , C25D21/18
摘要： The plating apparatus has a plating section in which a plating process is performed and a control section for regulating the plating solution. The plating section includes a plating bath containing plating solution, an anode provided in the plating solution, and a plating object serving as a cathode placed in the plating solution opposite the anode. The control section includes a regulating tank for regulating the composition and/or concentration of the plating solution, and a replenishing tank for injecting solution into the plating solution in the regulating tank. The plating apparatus also includes a mechanism for circulating plating solution between the regulating tank in the control section and the plating bath in the plating section. The plating section is installed in a first room, while the control section is installed in a second room, which is separate from the first room Accordingly, contamination in the plating section is prevented.

2. 发明授权

US06379520B1 Plating apparatus 有权
标题翻译：电镀装置
公开(公告)号：US06379520B1
公开(公告)日：2002-04-30
申请号：US09601084
申请日：2000-07-27
申请人： Fumio Kuriyama , Hiroyuki Ueyama , Junitsu Yamakawa , Kenichi Suzuki , Atsushi Chono
发明人： Fumio Kuriyama , Hiroyuki Ueyama , Junitsu Yamakawa , Kenichi Suzuki , Atsushi Chono
IPC分类号： C25D2112
CPC分类号： C25D21/14 , C25D17/001 , C25D21/16 , C25D21/18
摘要： The plating apparatus has a plating section in which a plating process is performed and a control section for regulating the plating solution. The plating section includes a plating bath containing plating solution, an anode provided in the plating solution, and a plating object serving as a cathode placed in the plating solution opposite the anode. The control section includes a regulating tank for regulating the composition and/or concentration of the plating solution, and a replenishing tank for injecting solution into the plating solution in the regulating tank. The plating apparatus also includes a mechanism for circulating plating solution between the regulating tank in the control section and the plating bath in the plating section. The plating section is installed in a first room, while the control section is installed in a second room, which is separate from the first room Accordingly, contamination in the plating section is prevented.
摘要翻译：电镀装置具有执行电镀处理的电镀部分和用于调节电镀液的控制部分。电镀部分包括含有电镀液的镀浴，设置在电镀液中的阳极，以及放置在与阳极相对的电镀溶液中的用作阴极的电镀对象。控制部分包括用于调节电镀溶液的组成和/或浓度的调节罐，以及用于将溶液注入调节罐中的电镀溶液的补充槽。电镀装置还包括用于在控制部分中的调节罐和电镀部分中的镀浴之间循环电镀液的机构。电镀部分安装在第一房间中，而控制部分安装在与第一房间分开的第二房间中。因此，防止了电镀部分中的污染。

3. 发明授权

US06365017B1 Substrate plating device 有权
标题翻译：基板电镀装置
公开(公告)号：US06365017B1
公开(公告)日：2002-04-02
申请号：US09530805
申请日：2000-05-05
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D1700
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

4. 发明授权

US06793794B2 Substrate plating apparatus and method 有权
标题翻译：基板电镀装置及方法
公开(公告)号：US06793794B2
公开(公告)日：2004-09-21
申请号：US10098415
申请日：2002-03-18
申请人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
发明人： Akihisa Hongo , Naoaki Ogure , Hiroyuki Ueyama , Junitsu Yamakawa , Mizuki Nagai , Kenichi Suzuki , Atsushi Chono , Satoshi Sendai , Koji Mishima
IPC分类号： C25D500
CPC分类号： C25D21/14 , C25D7/12 , C25D17/001
摘要： The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.
摘要翻译：本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置。不同的阳极设置在与基底相对的电镀槽中。基板电镀装置包括与电镀槽分开设置的循环容器或虚拟容器，其中可溶性阳极和阴极设置在循环容器或假容器中。阴极交换膜或选择性阳离子交换膜设置在阳极和阴极之间，并隔离其中，其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并且所产生的金属离子被供应到电镀浴。基板电镀装置还可以包括设置在电镀槽中的基板和阳极之间的离子交换膜或中性多孔隔膜，其中离子交换膜或中性多孔隔膜将电镀槽分成衬底区域和阳极区域。

5. 发明申请

US20070102285A1 Apparatus for managing a plating liquid 审中-公开
标题翻译：用于管理电镀液的设备
公开(公告)号：US20070102285A1
公开(公告)日：2007-05-10
申请号：US11643771
申请日：2006-12-22
申请人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
发明人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25B15/00
CPC分类号： C25D21/18 , C25D21/12 , C25D21/14
摘要： The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.
摘要翻译：基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于根据CV或CVS工艺测量电镀液的剥离区域。

6. 发明授权

US06627066B1 Method of measuring the concentration of a leveler in a plating liquid 有权
标题翻译：测量电镀液中矫正剂浓度的方法
公开(公告)号：US06627066B1
公开(公告)日：2003-09-30
申请号：US09830407
申请日：2001-04-27
申请人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
发明人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： G01N2742
CPC分类号： C25D21/18 , C25D21/12 , C25D21/14
摘要： The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.
摘要翻译：基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于根据CV或CVS工艺测量电镀液的剥离区域。

7. 发明授权

US07172683B2 Method of managing a plating liquid used in a plating apparatus 有权
标题翻译：电镀装置中使用的电镀液的管理方法
公开(公告)号：US07172683B2
公开(公告)日：2007-02-06
申请号：US10627684
申请日：2003-07-28
申请人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
发明人： Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号： C25D21/14 , C25D7/12
CPC分类号： C25D21/18 , C25D21/12 , C25D21/14
摘要： The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.
摘要翻译：基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于根据CV或CVS工艺测量电镀液的剥离区域。

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