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1. 发明授权

US09163327B2 Silicon wafer and a silicon epitaxial wafer having a polycrystal silicon layer formed on a major surface including boron concentration of the polycrystal silicon layer being 1×1015 atom/cm3 or less 有权
标题翻译：硅晶片和硅外延晶片具有在多晶硅层的硼浓度为1×10 15原子/ cm 3以下的主表面上形成的多晶硅层
公开(公告)号：US09163327B2
公开(公告)日：2015-10-20
申请号：US13565423
申请日：2012-08-02
申请人： Fumiaki Maruyama , Naoki Naito , Atsuo Uchiyama
发明人： Fumiaki Maruyama , Naoki Naito , Atsuo Uchiyama
IPC分类号： H01L29/02 , C30B29/06 , H01L51/00 , H01L27/04 , H01L27/12 , C30B25/02 , F24F3/16 , H01L21/02
CPC分类号： C30B29/06 , C30B25/02 , F24F3/161 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L27/04 , H01L27/1262 , H01L51/0096
摘要： Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1×1010 atoms/cm2 or less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/m3 or less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.
摘要翻译：本发明提供了一种硅晶片，其质量稳定，对设备特性没有不利影响，并且通过限制来自环境的硼污染而制造，以及其制造方法。具体地，硅晶片的特征在于其上附着的硼量为1×10 10原子/ cm 2或更小。为了制造附着在晶片表面上的含有少量硼的晶片，在硼浓度为15ng / m 3以下的气氛中处理晶片。在无尘室等中使用无硼过滤器和硼吸附过滤器作为过滤器，以降低大气中的硼浓度。

2. 发明授权

US08273146B1 Wafer and epitaxial wafer, and manufacturing processes therefor 有权
标题翻译：晶圆和外延晶片及其制造工艺
公开(公告)号：US08273146B1
公开(公告)日：2012-09-25
申请号：US09856139
申请日：2000-09-20
申请人： Fumiaki Maruyama , Naoki Naito , Atsuo Uchiyama
发明人： Fumiaki Maruyama , Naoki Naito , Atsuo Uchiyama
IPC分类号： B08B15/02 , B01D46/00
CPC分类号： C30B29/06 , C30B25/02 , F24F3/161 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L27/04 , H01L27/1262 , H01L51/0096
摘要： Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1×1010 atoms/cm2 or less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/m3 or less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.
摘要翻译：本发明提供了一种硅晶片，其质量稳定，对设备特性没有不利影响，并且通过限制来自环境的硼污染而制造，以及其制造方法。具体地，硅晶片的特征在于其上附着的硼量为1×10 10原子/ cm 2或更小。为了制造附着在晶片表面上的含有少量硼的晶片，在硼浓度为15ng / m 3以下的气氛中处理晶片。在无尘室等中使用无硼过滤器和硼吸附过滤器作为过滤器，以降低大气中的硼浓度。

3. 发明申请

US20120298995A1 WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESSES THEREFOR 审中-公开
标题翻译： WAFER和EPITAXIAL WAFER及其制造工艺
公开(公告)号：US20120298995A1
公开(公告)日：2012-11-29
申请号：US13565423
申请日：2012-08-02
申请人： Fumiaki Maruyama , Naoki Naito , Atsuo Uchiyama
发明人： Fumiaki Maruyama , Naoki Naito , Atsuo Uchiyama
IPC分类号： B01L1/04 , H01L29/38 , H01L21/02 , H01L29/02
CPC分类号： C30B29/06 , C30B25/02 , F24F3/161 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L27/04 , H01L27/1262 , H01L51/0096
摘要： Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1×1010 atoms/cm2 or less. In order to manufacture such a wafer as contains a small amount of boron attached on the wafer surface, the wafer is treated in an atmosphere of boron concentration of 15 ng/m3 or less. Boron-less filters and boron adsorbing filters are used as filters in a clean room and the like so as to lower the boron concentration in the atmosphere.
摘要翻译：本发明提供了一种硅晶片，其质量稳定，对设备特性没有不利影响，并且通过限制来自环境的硼污染而制造，以及其制造方法。具体地，硅晶片的特征在于其上附着的硼量为1×10 10原子/ cm 2或更小。为了制造附着在晶片表面上的含有少量硼的晶片，在硼浓度为15ng / m 3以下的气氛中处理晶片。在无尘室等中使用无硼过滤器和硼吸附过滤器作为过滤器，以降低大气中的硼浓度。

4. 发明授权

US08569148B2 Final polishing method for silicon single crystal wafer and silicon single crystal wafer 有权
标题翻译：硅单晶晶片和硅单晶晶片的最终抛光方法
公开(公告)号：US08569148B2
公开(公告)日：2013-10-29
申请号：US12449017
申请日：2008-01-29
申请人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
发明人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
IPC分类号： H01L21/306
CPC分类号： B24B37/042 , H01L21/02024
摘要： The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.
摘要翻译：本发明提供了一种用于在最终研磨步骤中将研磨速度设定为10nm /分以下的最终抛光的硅单晶晶片的最终抛光方法，作为用于研磨硅的多个研磨步骤中的最终步骤将具有抛光浆料的单晶晶片置于硅单晶晶片和抛光垫之间，以及通过该方法进行最终抛光的硅单晶晶片。因此，可以提供可以获得具有较少PID（抛光诱导缺陷）的硅单晶晶片和通过该方法进行最终抛光的硅单晶晶片的最终抛光方法。

5. 发明申请

US20100090314A1 FINAL POLISHING METHOD FOR SILICON SINGLE CRYSTAL WAFER AND SILICON SINGLE CRYSTAL WAFER 有权
标题翻译：硅单晶和硅晶单晶最终抛光方法
公开(公告)号：US20100090314A1
公开(公告)日：2010-04-15
申请号：US12449017
申请日：2008-01-29
申请人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
发明人： Naoto Iizuka , Hirotaka Kurimoto , Koichi Kosaka , Fumiaki Maruyama
IPC分类号： H01L29/34 , H01L21/306
CPC分类号： B24B37/042 , H01L21/02024
摘要： The present invention provides a final polishing method for a silicon single crystal wafer that performs final polishing with a polishing rate being set to 10 nm/min or below at a final polishing step as a final step among a plurality of polishing steps for polishing the silicon single crystal wafer with a polishing slurry being interposed between the silicon single crystal wafer and a polishing pad, and a silicon single crystal wafer subjected to final polishing by this method. Hereby, there can be provided the final polishing method that can obtain a silicon single crystal wafer with less PIDs (Polishing Induced Defects) and the silicon single crystal wafer subjected to final polishing by this method.
摘要翻译：本发明提供了一种用于在最终研磨步骤中将研磨速度设定为10nm /分以下的最终抛光的硅单晶晶片的最终抛光方法，作为用于研磨硅的多个研磨步骤中的最终步骤将具有抛光浆料的单晶晶片置于硅单晶晶片和抛光垫之间，以及通过该方法进行最终抛光的硅单晶晶片。因此，可以提供可以获得具有较少PID（抛光诱导缺陷）的硅单晶晶片和通过该方法进行最终抛光的硅单晶晶片的最终抛光方法。

6. 发明申请

US20070007245A1 Silicon wafer reclamation method and reclaimed wafer 审中-公开
标题翻译：硅片回收方法和回收晶圆
公开(公告)号：US20070007245A1
公开(公告)日：2007-01-11
申请号：US10571781
申请日：2004-08-24
申请人： Takanobu Uchida , Kazuhide Iijima , Tetsuo Yamazaki , Shinichi Tomaru , Fumiaki Maruyama
发明人： Takanobu Uchida , Kazuhide Iijima , Tetsuo Yamazaki , Shinichi Tomaru , Fumiaki Maruyama
IPC分类号： B44C1/22 , C03C25/68 , C23F1/00
CPC分类号： H01L21/02079 , H01L21/02032 , H01L21/3221
摘要： The present invention is a method for reclaiming a silicon wafer in which a thin film has been formed on its surface, at least, comprising a thin-film removing step for removing the thin film having been formed on the silicon wafer and a mirror-polishing step for mirror-polishing at least one side of the thin-film-removed silicon wafer, wherein, before performing the mirror-polishing step, gettering-site forming treatment for applying damage load to at least one side of the silicon wafer is performed and then the silicon wafer is subjected to heat treatment, thereby impurities inside the silicon wafer are reduced. Thereby, there is provided a method for reclaiming a silicon wafer, in which a thin film such as a metal thin film having been formed on a silicon wafer can be removed, and impurities having diffused inside the wafer can be also reduced, thereby silicon wafers having very little metal contamination can be stably obtained.
摘要翻译：本发明是一种用于回收在其表面上形成薄膜的硅晶片的方法，至少包括用于去除在硅晶片上形成的薄膜的薄膜去除步骤和镜面抛光在进行镜面抛光步骤之前，进行用于对硅晶片的至少一侧施加损伤负荷的吸杂位置形成处理，进行用于对去除薄膜的硅晶片的至少一个侧面进行镜面抛光的步骤，然后对硅晶片进行热处理，从而减小硅晶片内的杂质。因此，提供了一种用于回收硅晶片的方法，其中可以除去已经形成在硅晶片上的诸如金属薄膜的薄膜，并且还可以减少在晶片内扩散的杂质，从而硅晶片可以稳定地获得金属污染很少。

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